KR100890539B1 - 다공성 실리카 필름의 형성 방법 - Google Patents
다공성 실리카 필름의 형성 방법 Download PDFInfo
- Publication number
- KR100890539B1 KR100890539B1 KR1020030059530A KR20030059530A KR100890539B1 KR 100890539 B1 KR100890539 B1 KR 100890539B1 KR 1020030059530 A KR1020030059530 A KR 1020030059530A KR 20030059530 A KR20030059530 A KR 20030059530A KR 100890539 B1 KR100890539 B1 KR 100890539B1
- Authority
- KR
- South Korea
- Prior art keywords
- surfactant
- porous silica
- silica film
- formula
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 134
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000004094 surface-active agent Substances 0.000 claims abstract description 27
- 150000001875 compounds Chemical class 0.000 claims abstract description 23
- 239000011259 mixed solution Substances 0.000 claims abstract description 20
- 239000002736 nonionic surfactant Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 14
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000002156 mixing Methods 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 10
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 4
- 238000000354 decomposition reaction Methods 0.000 claims description 4
- 230000008034 disappearance Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- 125000001424 substituent group Chemical group 0.000 claims description 2
- 125000002091 cationic group Chemical group 0.000 claims 1
- 239000003093 cationic surfactant Substances 0.000 claims 1
- 229920001451 polypropylene glycol Polymers 0.000 claims 1
- 239000000243 solution Substances 0.000 abstract description 17
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 79
- 239000011148 porous material Substances 0.000 description 18
- 239000000463 material Substances 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 12
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 11
- 239000002243 precursor Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 230000002378 acidificating effect Effects 0.000 description 5
- 239000003054 catalyst Substances 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- 150000004703 alkoxides Chemical class 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 230000007062 hydrolysis Effects 0.000 description 3
- 238000006460 hydrolysis reaction Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000005903 acid hydrolysis reaction Methods 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- -1 silicon alkoxides Chemical class 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- 239000012769 display material Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012789 electroconductive film Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000000693 micelle Substances 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/122—Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1212—Zeolites, glasses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Silicon Compounds (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Silicates, Zeolites, And Molecular Sieves (AREA)
Abstract
Description
[화학식 1]
OH(CH2CH2O)x(CH(CH3)CH2O)y(CH2CH2O)xH
[식 중, x 및 y 는 각각 1 ≤x ≤185 및 5 ≤y ≤70 을 만족시키는 정수를 의미한다]. 상기 축합물은 긴 골격을 갖는 직쇄 구조이며, 임계 미셀 농도보다 높은 일정 농도에서 다양한 형태의 액정을 형성한다. 상기 액정 템플리트를 통해 수득한 다공성 실리카 필름 내 세공은 세로 방향으로 매우 긴 구조로 형성된다. 또한, 세공 사이에 존재하는 실리카 벽의 두께가 균일해지므로, 응력이 가해질 때 응력 집중이 없는 고강도 구조를 수득한다.
[화학식 2]
Si(CH3)2(OR2)
[식 중, 치환체 R 은 메틸기 또는 에틸기를 의미한다].
L31/TEOS 몰 비 | 상대유전상수 | 탄성계수 (GPa) | 경도 (GPa) |
0.25 | 2.6 | 9.2 | 0.89 |
0.31 | 2.4 | 6.2 | 0.64 |
0.45 | 2.2 | 4.7 | 0.49 |
0.73 | 2.0 | 5.7 | 0.41 |
다공성 필름의 종류 | 상대유전상수 | 굴절률 | 탄성계수(GPa) | 경도(GPa) | |
실시예 1 | (L31/TEOS= 0.73) | 2.0 | 1.21 | 5.7 | 0.41 |
비교예 1 | LKD5109 | 2.2 | 1.25 | 3.2 | 0.45 |
비교예 2 | ALCAP5100 | 2.2 | 1.27 | 3.3 | - |
비교예 3 | Porous silica | 2.20-2.25 | 1.275 | 5.5-6.0 | 0-0.7 |
계면활성제의 종류 | 상대유전상수 | 탄성계수 (GPa) | 경도 (GPa) | |
실시예 2 | P103+L31 | 1.85 | 4.2 | 0.35 |
비교예 5 | P103 만 | 1.83 | 1.5 | 0.16 |
다공성 필름의 종류 | 상대유전상수 | 굴절률 | 탄성계수(GPa) | 경도(GPa) | |
실시예 3 | (P45/TEOS=0.12) | 2.2 | 1.218 | 5.0 | 0.50 |
비교예 6 | LKD5109 | 2.2 | 1.250 | 3.2 | 0.45 |
비교예 7 | ALCAP5100 | 2.2 | 1.270 | 3.3 | - |
비교예 8 | Porous silica | 2.20-2.25 | 1.275 | 5.5-6.0 | 0-0.7 |
Claims (6)
- 가수분해 가능한 알콕시실란 화합물, 물, 알코올 및 계면활성제를 사용하는 다공성 실리카 필름의 형성 방법에 있어서,계면활성제로서, Du Nouy 방법의 표현에 따라 0.1 중량% 농도 및 25℃에서 45 mN/m 이상의 표면장력을 갖고, 하기 화학식 1 로 표시되는 폴리옥시에틸렌-폴리옥시프로필렌 축합물을 포함하는 1 종 이상의 비이온성 계면활성제(들)를 사용하여, 상기 비이온성 계면활성제, 상기 알콕시실란 화합물, 물 및 알코올을 혼합하고, 추가로 하기 화학식 2 로 표시되는 디메틸디알콕시실란 화합물을 첨가하여 수득한 혼합 용액을 기판 상에 코팅하고, 상기 혼합 용액 중의 계면활성제를 분해시키거나 소실시키는 것을 포함하는 방법으로서, 상기 혼합 용액의 혼합비는 알콕시실란 화합물 1 몰에 대해 물 8 내지 50 몰, 화학식 1 로 표시되는 폴리옥시에틸렌-폴리옥시프로필렌 축합물 0.1 내지 0.5 몰 및 화학식 2 로 표시되는 디메틸디알콕시실란 화합물 0.05 내지 0.5 몰인, 다공성 실리카 필름의 형성 방법:[화학식 1]OH(CH2CH2O)x(CH(CH3)CH2O)y(CH2CH2O)xH[식 중, x 및 y 는 각각 1 ≤x ≤185 및 5 ≤y ≤70 을 만족시키는 정수를 의미한다],[화학식 2]Si(CH3)2(OR2)[식 중, 치환체 R 은 메틸기 또는 에틸기를 의미한다].
- 삭제
- 삭제
- 삭제
- 제 1 항에 있어서, 양이온성 또는 비이온성 계면활성제를 비이온성 계면활성제와 혼합하여 수득한 혼합 계면활성제를 계면활성제로서 사용하는, 다공성 실리카 필름의 형성 방법.
- 제 1 항에 있어서, 계면활성제의 분해 또는 소실로 인해 형성된 실리카 필름에서 단면 투과전자현미경에 의해 웜홀 (worm-hole) 구조를 관찰할 수 있는, 다공성 실리카 필름의 형성 방법.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002247190 | 2002-08-27 | ||
JPJP-P-2002-00247190 | 2002-08-27 | ||
JPJP-P-2003-00032189 | 2003-02-10 | ||
JP2003032189A JP4284083B2 (ja) | 2002-08-27 | 2003-02-10 | 多孔質シリカ膜の形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040030276A KR20040030276A (ko) | 2004-04-09 |
KR100890539B1 true KR100890539B1 (ko) | 2009-03-27 |
Family
ID=31996097
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030059530A Expired - Lifetime KR100890539B1 (ko) | 2002-08-27 | 2003-08-27 | 다공성 실리카 필름의 형성 방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6946161B2 (ko) |
JP (1) | JP4284083B2 (ko) |
KR (1) | KR100890539B1 (ko) |
CN (1) | CN100367474C (ko) |
TW (1) | TWI284140B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103979543A (zh) * | 2014-05-08 | 2014-08-13 | 新疆大学 | 一种多孔硅的修饰方法及其作为生物传感器的用途 |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004292190A (ja) * | 2003-03-25 | 2004-10-21 | Univ Shinshu | 二酸化ケイ素薄膜とその製造法 |
JP4724384B2 (ja) * | 2004-06-08 | 2011-07-13 | キヤノン株式会社 | 電気泳動表示素子及び電気泳動表示素子の駆動方法 |
CN1596035B (zh) * | 2004-06-24 | 2010-05-12 | 同济大学 | 一种硅微型驻极体声传感器储电膜的化学表面修正方法 |
JP2006036598A (ja) * | 2004-07-28 | 2006-02-09 | Ube Nitto Kasei Co Ltd | 多孔質シリカ系薄膜の製造方法、多孔質シリカ系薄膜及び構造物 |
WO2006068183A1 (ja) * | 2004-12-25 | 2006-06-29 | Matsushita Electric Works, Ltd. | 液晶表示装置 |
US20090206453A1 (en) * | 2005-02-15 | 2009-08-20 | Ulvac, Inc. | Method for Preparing Modified Porous Silica Films, Modified Porous Silica Films Prepared According to This Method and Semiconductor Devices Fabricated Using the Modified Porous Silica Films |
JP4894153B2 (ja) * | 2005-03-23 | 2012-03-14 | 株式会社アルバック | 多孔質膜の前駆体組成物及びその調製方法、多孔質膜及びその作製方法、並びに半導体装置 |
JP5002135B2 (ja) * | 2005-06-16 | 2012-08-15 | 株式会社アルバック | 超低屈折率膜の作製方法 |
US20070074757A1 (en) * | 2005-10-04 | 2007-04-05 | Gurdian Industries Corp | Method of making solar cell/module with porous silica antireflective coating |
US8153282B2 (en) * | 2005-11-22 | 2012-04-10 | Guardian Industries Corp. | Solar cell with antireflective coating with graded layer including mixture of titanium oxide and silicon oxide |
US20070113881A1 (en) * | 2005-11-22 | 2007-05-24 | Guardian Industries Corp. | Method of making solar cell with antireflective coating using combustion chemical vapor deposition (CCVD) and corresponding product |
JP5030478B2 (ja) * | 2006-06-02 | 2012-09-19 | 株式会社アルバック | 多孔質膜の前駆体組成物及びその調製方法、多孔質膜及びその作製方法、並びに半導体装置 |
US20080072956A1 (en) * | 2006-09-07 | 2008-03-27 | Guardian Industries Corp. | Solar cell with antireflective coating comprising metal fluoride and/or silica and method of making same |
US7821637B1 (en) | 2007-02-22 | 2010-10-26 | J.A. Woollam Co., Inc. | System for controlling intensity of a beam of electromagnetic radiation and method for investigating materials with low specular reflectance and/or are depolarizing |
US7767253B2 (en) * | 2007-03-09 | 2010-08-03 | Guardian Industries Corp. | Method of making a photovoltaic device with antireflective coating |
US20100096009A1 (en) * | 2007-03-13 | 2010-04-22 | Mitsubishi Chemical Corporation | Porous silica, optical-purpose layered product and composition, and method for producing porous silica |
US8237047B2 (en) * | 2007-05-01 | 2012-08-07 | Guardian Industries Corp. | Method of making a photovoltaic device or front substrate for use in same with scratch-resistant coating and resulting product |
US20080295884A1 (en) * | 2007-05-29 | 2008-12-04 | Sharma Pramod K | Method of making a photovoltaic device or front substrate with barrier layer for use in same and resulting product |
US8445774B2 (en) * | 2007-07-26 | 2013-05-21 | Guardian Industries Corp. | Method of making an antireflective silica coating, resulting product, and photovoltaic device comprising same |
US8450594B2 (en) * | 2007-07-26 | 2013-05-28 | Guardian Industries Corp. | Method of making an antireflective silica coating, resulting product and photovoltaic device comprising same |
US20090075092A1 (en) * | 2007-09-18 | 2009-03-19 | Guardian Industries Corp. | Method of making an antireflective silica coating, resulting product, and photovoltaic device comprising same |
US20090101209A1 (en) * | 2007-10-19 | 2009-04-23 | Guardian Industries Corp. | Method of making an antireflective silica coating, resulting product, and photovoltaic device comprising same |
US8319095B2 (en) * | 2007-11-27 | 2012-11-27 | Guardian Industries Corp. | Method of making an antireflective silica coating, resulting product, and photovoltaic device comprising same |
US8114472B2 (en) * | 2008-01-08 | 2012-02-14 | Guardian Industries Corp. | Method of making a temperable antiglare coating, and resulting products containing the same |
US20090181256A1 (en) * | 2008-01-14 | 2009-07-16 | Guardian Industries Corp. | Methods of making silica-titania coatings, and products containing the same |
US8668961B2 (en) * | 2008-07-31 | 2014-03-11 | Guardian Industries Corp. | Titania coating and method of making same |
US7955574B2 (en) * | 2008-10-01 | 2011-06-07 | Battelle Memorial Institute | Porous thin film and process for analyte preconcentration and determination |
JP5370241B2 (ja) * | 2009-03-31 | 2013-12-18 | 三菱化学株式会社 | シリカ多孔質体の製造方法 |
US8617641B2 (en) * | 2009-11-12 | 2013-12-31 | Guardian Industries Corp. | Coated article comprising colloidal silica inclusive anti-reflective coating, and method of making the same |
JP5777278B2 (ja) * | 2009-12-01 | 2015-09-09 | キヤノン株式会社 | 光学素子の製造方法 |
KR100984864B1 (ko) * | 2010-07-07 | 2010-10-04 | 주식회사 힌트 | 회전 칫솔 |
US9272949B2 (en) | 2010-07-09 | 2016-03-01 | Guardian Industries Corp. | Coated glass substrate with heat treatable ultraviolet blocking characteristics |
TWI435454B (zh) | 2010-10-25 | 2014-04-21 | Au Optronics Corp | 太陽能電池 |
JP5988817B2 (ja) * | 2012-10-12 | 2016-09-07 | 株式会社アルバック | 多孔質シリカ膜前駆体組成物、多孔質シリカ膜の製造方法及び多孔質シリカ膜並びに半導体素子 |
CN105731467B (zh) * | 2014-12-11 | 2018-01-05 | 中国石油天然气股份有限公司 | 用于吸收声波的二氧化硅膜材料及其合成方法 |
KR102072312B1 (ko) | 2018-11-15 | 2020-01-31 | 구형모 | 독립 공간의 임의 구축과 냉난방 온도 제어의 효율성을 겸한 책상형 텐트 |
CN111446152A (zh) * | 2020-04-03 | 2020-07-24 | 上海集成电路研发中心有限公司 | 一种制备低介电常数介质层的方法 |
CN115031887B (zh) * | 2022-06-06 | 2023-10-20 | 深圳大学 | 多孔压电薄膜及其制备方法、应用和压力传感器 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09227249A (ja) * | 1996-02-28 | 1997-09-02 | Toyota Central Res & Dev Lab Inc | 高密度多孔体及びその製造方法 |
JPH10194720A (ja) | 1997-01-10 | 1998-07-28 | Toyota Central Res & Dev Lab Inc | バルク状シリカ多孔体の製造方法 |
JPH1135315A (ja) | 1997-07-18 | 1999-02-09 | Toyota Central Res & Dev Lab Inc | 高密度メソ多孔体の製造方法 |
WO2000039028A1 (en) | 1998-12-23 | 2000-07-06 | Battelle Memorial Institute | Mesoporous silica film from a solution containing a surfactant and methods of making same |
JP2001118841A (ja) | 1999-10-22 | 2001-04-27 | Asahi Kasei Corp | 多孔性シリカ |
KR20010062224A (ko) * | 1999-12-07 | 2001-07-07 | 마쉬 윌리엄 에프 | 유전 상수가 감소된 메소포어성 필름 |
US6365266B1 (en) * | 1999-12-07 | 2002-04-02 | Air Products And Chemicals, Inc. | Mesoporous films having reduced dielectric constants |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1189267B1 (en) * | 2000-04-03 | 2012-05-23 | Ulvac, Inc. | Method for preparing porous sio2 film |
JP2002173641A (ja) * | 2000-09-29 | 2002-06-21 | Asahi Kasei Corp | 絶縁薄膜用の多孔性シリカ薄膜 |
JP2003089768A (ja) * | 2001-09-18 | 2003-03-28 | Asahi Kasei Corp | 絶縁性薄膜製造用の塗布組成物 |
JP2003089769A (ja) * | 2001-09-18 | 2003-03-28 | Asahi Kasei Corp | 絶縁薄膜製造用の塗布組成物 |
JP2003163210A (ja) * | 2001-11-28 | 2003-06-06 | Asahi Kasei Corp | 絶縁薄膜の製造方法 |
-
2003
- 2003-02-10 JP JP2003032189A patent/JP4284083B2/ja not_active Expired - Lifetime
- 2003-08-22 US US10/645,581 patent/US6946161B2/en not_active Expired - Lifetime
- 2003-08-25 TW TW092123313A patent/TWI284140B/zh not_active IP Right Cessation
- 2003-08-27 KR KR1020030059530A patent/KR100890539B1/ko not_active Expired - Lifetime
- 2003-08-27 CN CNB031649521A patent/CN100367474C/zh not_active Expired - Lifetime
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09227249A (ja) * | 1996-02-28 | 1997-09-02 | Toyota Central Res & Dev Lab Inc | 高密度多孔体及びその製造方法 |
JPH10194720A (ja) | 1997-01-10 | 1998-07-28 | Toyota Central Res & Dev Lab Inc | バルク状シリカ多孔体の製造方法 |
JPH1135315A (ja) | 1997-07-18 | 1999-02-09 | Toyota Central Res & Dev Lab Inc | 高密度メソ多孔体の製造方法 |
WO2000039028A1 (en) | 1998-12-23 | 2000-07-06 | Battelle Memorial Institute | Mesoporous silica film from a solution containing a surfactant and methods of making same |
JP2001118841A (ja) | 1999-10-22 | 2001-04-27 | Asahi Kasei Corp | 多孔性シリカ |
KR20010062224A (ko) * | 1999-12-07 | 2001-07-07 | 마쉬 윌리엄 에프 | 유전 상수가 감소된 메소포어성 필름 |
US6365266B1 (en) * | 1999-12-07 | 2002-04-02 | Air Products And Chemicals, Inc. | Mesoporous films having reduced dielectric constants |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103979543A (zh) * | 2014-05-08 | 2014-08-13 | 新疆大学 | 一种多孔硅的修饰方法及其作为生物传感器的用途 |
CN103979543B (zh) * | 2014-05-08 | 2015-12-30 | 新疆大学 | 一种多孔硅的修饰方法及其作为生物传感器的用途 |
Also Published As
Publication number | Publication date |
---|---|
TWI284140B (en) | 2007-07-21 |
CN1495868A (zh) | 2004-05-12 |
KR20040030276A (ko) | 2004-04-09 |
US6946161B2 (en) | 2005-09-20 |
CN100367474C (zh) | 2008-02-06 |
TW200407386A (en) | 2004-05-16 |
JP4284083B2 (ja) | 2009-06-24 |
US20040058079A1 (en) | 2004-03-25 |
JP2004143029A (ja) | 2004-05-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100890539B1 (ko) | 다공성 실리카 필름의 형성 방법 | |
JP4125637B2 (ja) | 低誘電率材料及びその製造方法 | |
KR100536178B1 (ko) | 계면활성제를 함유하는 용액으로부터 제조된 메소다공성실리카 필름 및 그 제조방법 | |
CA2289782C (en) | Alkoxysilane/organic polymer composition for use in producing an insulating thin film and use thereof | |
JP5096233B2 (ja) | 有機酸化ケイ素系微粒子及びその製造方法、多孔質膜形成用組成物、多孔質膜及びその形成方法、並びに半導体装置 | |
EP1790703B1 (en) | Coating liquid for forming silica-based film having low dielectric constant and substrate having film of low dielectric constant coated thereon | |
US6592980B1 (en) | Mesoporous films having reduced dielectric constants | |
US6699797B1 (en) | Method of fabrication of low dielectric constant porous metal silicate films | |
KR100671850B1 (ko) | 다공질 필름의 개질 방법 및 개질된 다공질 필름 및 그 용도 | |
EP1026213A1 (en) | Coating fluid for forming low-permittivity silica-based coating film and substrate with low-permittivity coating film | |
US20070037411A1 (en) | Method of manufacturing an electronic device | |
US20090206453A1 (en) | Method for Preparing Modified Porous Silica Films, Modified Porous Silica Films Prepared According to This Method and Semiconductor Devices Fabricated Using the Modified Porous Silica Films | |
KR100727277B1 (ko) | 저유전율 다공질 실리카질 막 및 당해 막이 형성되어 있는 반도체 장치 | |
KR20060020830A (ko) | 계면활성제를 템플릿으로 이용한 저유전성 메조포러스박막의 제조방법 | |
KR20070083745A (ko) | 유기실리카 물질 내의 가교 유기 기의 변환방법 | |
JP2009286935A (ja) | 有機酸化ケイ素微粒子及びその製造方法、多孔質膜形成用組成物、多孔質膜及びその形成方法、並びに半導体装置 | |
JPH1161043A (ja) | 多孔質シリカ系被膜形成用塗布液、被膜付基材および短繊維状シリカ | |
JP4279063B2 (ja) | 多孔性シリカ膜、それを有する積層体 | |
US6809041B2 (en) | Low dielectric constant films derived by sol-gel processing of a hyperbranched polycarbosilane | |
Bruinsma et al. | Low K Mesoporous Silica Films Through Template-Based Processing | |
JP5685884B2 (ja) | シリカ体及びその製造方法 | |
JP2004210579A (ja) | 多孔質シリカフィルムの製造方法、該方法により得られた多孔質シリカフィルム、並びにそれからなる半導体装置 | |
JP2000336312A (ja) | シリカ系被膜形成用塗布液、シリカ系被膜の製造法及び半導体装置 | |
Yamada et al. | Characterization of Low-Dielectric-Constant Methylsiloxane Spin-on-Glass Films | |
JP2000044874A (ja) | シリカ系被膜形成用塗布液、シリカ系被膜及びそれを用いた半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20030827 |
|
PG1501 | Laying open of application | ||
A201 | Request for examination | ||
AMND | Amendment | ||
PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20070123 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 20030827 Comment text: Patent Application |
|
E902 | Notification of reason for refusal | ||
PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20080111 Patent event code: PE09021S01D |
|
AMND | Amendment | ||
E601 | Decision to refuse application | ||
PE0601 | Decision on rejection of patent |
Patent event date: 20080821 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20080111 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |
|
AMND | Amendment | ||
J201 | Request for trial against refusal decision | ||
PJ0201 | Trial against decision of rejection |
Patent event date: 20081120 Comment text: Request for Trial against Decision on Refusal Patent event code: PJ02012R01D Patent event date: 20080821 Comment text: Decision to Refuse Application Patent event code: PJ02011S01I Appeal kind category: Appeal against decision to decline refusal Decision date: 20090109 Appeal identifier: 2008101012267 Request date: 20081120 |
|
PB0901 | Examination by re-examination before a trial |
Comment text: Amendment to Specification, etc. Patent event date: 20081120 Patent event code: PB09011R02I Comment text: Request for Trial against Decision on Refusal Patent event date: 20081120 Patent event code: PB09011R01I Comment text: Amendment to Specification, etc. Patent event date: 20080513 Patent event code: PB09011R02I Comment text: Amendment to Specification, etc. Patent event date: 20070123 Patent event code: PB09011R02I |
|
B701 | Decision to grant | ||
PB0701 | Decision of registration after re-examination before a trial |
Patent event date: 20090109 Comment text: Decision to Grant Registration Patent event code: PB07012S01D Patent event date: 20081223 Comment text: Transfer of Trial File for Re-examination before a Trial Patent event code: PB07011S01I |
|
GRNT | Written decision to grant | ||
PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20090319 Patent event code: PR07011E01D |
|
PR1002 | Payment of registration fee |
Payment date: 20090319 End annual number: 3 Start annual number: 1 |
|
PG1601 | Publication of registration | ||
PR1001 | Payment of annual fee |
Payment date: 20120315 Start annual number: 4 End annual number: 4 |
|
FPAY | Annual fee payment |
Payment date: 20130308 Year of fee payment: 5 |
|
PR1001 | Payment of annual fee |
Payment date: 20130308 Start annual number: 5 End annual number: 5 |
|
FPAY | Annual fee payment |
Payment date: 20140219 Year of fee payment: 6 |
|
PR1001 | Payment of annual fee |
Payment date: 20140219 Start annual number: 6 End annual number: 6 |
|
FPAY | Annual fee payment |
Payment date: 20150217 Year of fee payment: 7 |
|
PR1001 | Payment of annual fee |
Payment date: 20150217 Start annual number: 7 End annual number: 7 |
|
FPAY | Annual fee payment |
Payment date: 20160218 Year of fee payment: 8 |
|
PR1001 | Payment of annual fee |
Payment date: 20160218 Start annual number: 8 End annual number: 8 |
|
FPAY | Annual fee payment |
Payment date: 20170302 Year of fee payment: 9 |
|
PR1001 | Payment of annual fee |
Payment date: 20170302 Start annual number: 9 End annual number: 9 |
|
FPAY | Annual fee payment |
Payment date: 20180223 Year of fee payment: 10 |
|
PR1001 | Payment of annual fee |
Payment date: 20180223 Start annual number: 10 End annual number: 10 |
|
FPAY | Annual fee payment |
Payment date: 20200305 Year of fee payment: 12 |
|
PR1001 | Payment of annual fee |
Payment date: 20200305 Start annual number: 12 End annual number: 12 |
|
PC1801 | Expiration of term |
Termination date: 20240227 Termination category: Expiration of duration |