FR2225844B1 - - Google Patents

Info

Publication number: FR2225844B1
Authority: FR; France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

FR7400545A

Other versions

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Intersil Corp

Original Assignee

Intersil Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1973-04-12

Filing date

1974-01-08

Publication date

1977-06-10

1974-01-08 Application filed by Intersil Inc filed Critical Intersil Inc

1974-11-08 Publication of FR2225844A1 publication Critical patent/FR2225844A1/fr

1977-06-10 Application granted granted Critical

1977-06-10 Publication of FR2225844B1 publication Critical patent/FR2225844B1/fr

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass

FR7400545A 1973-04-12 1974-01-08 Expired FR2225844B1 (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US35058773A	1973-04-12	1973-04-12

Publications (2)

Publication Number	Publication Date
FR2225844A1 FR2225844A1 (fr)	1974-11-08
FR2225844B1 true FR2225844B1 (fr)	1977-06-10

Family

ID=23377367

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR7400545A Expired FR2225844B1 (fr)	1973-04-12	1974-01-08

Country Status (7)

Country	Link
JP (1)	JPS503585A (fr)
CA (1)	CA997869A (fr)
DE (1)	DE2415736A1 (fr)
FR (1)	FR2225844B1 (fr)
GB (1)	GB1443999A (fr)
IT (1)	IT1008753B (fr)
NL (1)	NL7317176A (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS558019A (en) *	1978-06-30	1980-01-21	Nec Corp	Semiconductor device
US4442529A (en) *	1981-02-04	1984-04-10	At&T Bell Telephone Laboratories, Incorporated	Power supply rejection characteristics of CMOS circuits
NL8301554A (nl) *	1982-05-06	1983-12-01	Mitsubishi Electric Corp	Geintegreerde schakeling-inrichting van het cmos-type.
JPS5955052A (ja) *	1982-09-24	1984-03-29	Hitachi Ltd	半導体集積回路装置の製造方法
JPS60207368A (ja) *	1984-03-31	1985-10-18	Res Dev Corp Of Japan	相補型ｍｏｓ集積回路の製造方法
JPS60250664A (ja) *	1984-05-26	1985-12-11	Toshiba Corp	半導体集積回路装置およびその製造方法
JPH0652792B2 (ja) *	1985-02-26	1994-07-06	日産自動車株式会社	半導体装置
JPS6386555A (ja) *	1986-09-30	1988-04-16	Toshiba Corp	半導体装置

1973
- 1973-11-28 CA CA186,913A patent/CA997869A/en not_active Expired
- 1973-12-14 NL NL7317176A patent/NL7317176A/xx not_active Application Discontinuation
- 1973-12-21 GB GB5939073A patent/GB1443999A/en not_active Expired
1974
- 1974-01-08 FR FR7400545A patent/FR2225844B1/fr not_active Expired
- 1974-01-24 JP JP49010574A patent/JPS503585A/ja active Pending
- 1974-01-25 IT IT47931/74A patent/IT1008753B/it active
- 1974-04-01 DE DE2415736A patent/DE2415736A1/de active Pending

Also Published As

Publication number	Publication date
JPS503585A (fr)	1975-01-14
GB1443999A (en)	1976-07-28
DE2415736A1 (de)	1974-10-24
FR2225844A1 (fr)	1974-11-08
IT1008753B (it)	1976-11-30
CA997869A (en)	1976-09-28
NL7317176A (fr)	1974-10-15

Publication	Publication Date	Title
AR201758A1 (fr)	1975-04-15
AU476761B2 (fr)	1976-09-30
AU465372B2 (fr)	1975-09-25
AR201235Q (fr)	1975-02-21
AR201231Q (fr)	1975-02-21
AU474593B2 (fr)	1976-07-29
AU474511B2 (fr)	1976-07-22
AU474838B2 (fr)	1976-08-05
AU471343B2 (fr)	1976-04-15
AU465453B2 (fr)	1975-09-25
AU465434B2 (fr)	1975-09-25
AU450229B2 (fr)	1974-07-04
AU476714B2 (fr)	1976-09-30
AR201229Q (fr)	1975-02-21
AU466283B2 (fr)	1975-10-23
AR199451A1 (fr)	1974-08-30
AU476696B2 (fr)	1976-09-30
AU472848B2 (fr)	1976-06-03
AU477823B2 (fr)	1975-06-19
AU461342B2 (fr)	1975-05-22
AU471461B2 (fr)	1976-04-29
AR200256A1 (fr)	1974-10-31
AU476873B1 (fr)	1975-01-09
AR210729A1 (fr)	1977-09-15
AU477824B2 (fr)	1975-07-17

Legal Events

Date	Code	Title
1980-10-31	ST	Notification of lapse
1981-02-13	AR	Application made for restoration
1981-03-06	AR	Application made for restoration
1981-04-30	DI	Inadmissibility of an action of restoration
1981-08-14	BR	Restoration of rights
1985-11-22	ST	Notification of lapse