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CA997869A - Floating body mosfet - Google Patents

Floating body mosfet

Info

Publication number
CA997869A
CA997869A CA186,913A CA186913A CA997869A CA 997869 A CA997869 A CA 997869A CA 186913 A CA186913 A CA 186913A CA 997869 A CA997869 A CA 997869A
Authority
CA
Canada
Prior art keywords
floating body
body mosfet
mosfet
floating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA186,913A
Inventor
Richard N. Wilenken
Leon B. Pearce
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intersil Corp
Original Assignee
Intersil Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intersil Inc filed Critical Intersil Inc
Application granted granted Critical
Publication of CA997869A publication Critical patent/CA997869A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85Complementary IGFETs, e.g. CMOS
    • H10D84/858Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
CA186,913A 1973-04-12 1973-11-28 Floating body mosfet Expired CA997869A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35058773A 1973-04-12 1973-04-12

Publications (1)

Publication Number Publication Date
CA997869A true CA997869A (en) 1976-09-28

Family

ID=23377367

Family Applications (1)

Application Number Title Priority Date Filing Date
CA186,913A Expired CA997869A (en) 1973-04-12 1973-11-28 Floating body mosfet

Country Status (7)

Country Link
JP (1) JPS503585A (en)
CA (1) CA997869A (en)
DE (1) DE2415736A1 (en)
FR (1) FR2225844B1 (en)
GB (1) GB1443999A (en)
IT (1) IT1008753B (en)
NL (1) NL7317176A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS558019A (en) * 1978-06-30 1980-01-21 Nec Corp Semiconductor device
US4442529A (en) * 1981-02-04 1984-04-10 At&T Bell Telephone Laboratories, Incorporated Power supply rejection characteristics of CMOS circuits
NL8301554A (en) * 1982-05-06 1983-12-01 Mitsubishi Electric Corp INTEGRATED SWITCHING DEVICE OF THE CMOS TYPE.
JPS5955052A (en) * 1982-09-24 1984-03-29 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
JPS60207368A (en) * 1984-03-31 1985-10-18 Res Dev Corp Of Japan Manufacture of complementary type mos integrated circuit
JPS60250664A (en) * 1984-05-26 1985-12-11 Toshiba Corp Semiconductor integrated circuit device and manufacture thereof
JPH0652792B2 (en) * 1985-02-26 1994-07-06 日産自動車株式会社 Semiconductor device
JPS6386555A (en) * 1986-09-30 1988-04-16 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
DE2415736A1 (en) 1974-10-24
IT1008753B (en) 1976-11-30
NL7317176A (en) 1974-10-15
GB1443999A (en) 1976-07-28
FR2225844B1 (en) 1977-06-10
FR2225844A1 (en) 1974-11-08
JPS503585A (en) 1975-01-14

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