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ES487066A1 - Perfeccionamientos en dispositivos de conmutacion de estado solido - Google Patents

Perfeccionamientos en dispositivos de conmutacion de estado solido

Info

Publication number
ES487066A1
ES487066A1 ES487066A ES487066A ES487066A1 ES 487066 A1 ES487066 A1 ES 487066A1 ES 487066 A ES487066 A ES 487066A ES 487066 A ES487066 A ES 487066A ES 487066 A1 ES487066 A1 ES 487066A1
Authority
ES
Spain
Prior art keywords
region
conductivity
gate
type
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES487066A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES487066A1 publication Critical patent/ES487066A1/es
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743Making of internal connections, substrate contacts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211Gated diodes
    • H10D12/212Gated diodes having PN junction gates, e.g. field controlled diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
ES487066A 1978-12-20 1979-12-19 Perfeccionamientos en dispositivos de conmutacion de estado solido Expired ES487066A1 (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US97202178A 1978-12-20 1978-12-20
US97205678A 1978-12-20 1978-12-20
US97202278A 1978-12-20 1978-12-20

Publications (1)

Publication Number Publication Date
ES487066A1 true ES487066A1 (es) 1980-09-16

Family

ID=27420763

Family Applications (1)

Application Number Title Priority Date Filing Date
ES487066A Expired ES487066A1 (es) 1978-12-20 1979-12-19 Perfeccionamientos en dispositivos de conmutacion de estado solido

Country Status (18)

Country Link
JP (1) JPS6412106B2 (fr)
KR (1) KR830002293B1 (fr)
AU (1) AU529702B2 (fr)
CH (1) CH659151A5 (fr)
DD (1) DD147897A5 (fr)
ES (1) ES487066A1 (fr)
FR (1) FR2445026A1 (fr)
GB (1) GB2049283B (fr)
HU (1) HU181030B (fr)
IE (1) IE48892B1 (fr)
IL (1) IL58970A (fr)
IN (1) IN153497B (fr)
IT (1) IT1126603B (fr)
NL (1) NL7920184A (fr)
PL (1) PL220494A1 (fr)
SE (1) SE446139B (fr)
SG (1) SG32884G (fr)
WO (1) WO1980001337A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4242697A (en) * 1979-03-14 1980-12-30 Bell Telephone Laboratories, Incorporated Dielectrically isolated high voltage semiconductor devices
CA1145057A (fr) * 1979-12-28 1983-04-19 Adrian R. Hartman Commutateur a semiconducteur pour hautes tensions
IT1151525B (it) * 1981-03-27 1986-12-24 Western Electric Co Interruttore a diodi comandati
US4467344A (en) * 1981-12-23 1984-08-21 At&T Bell Telephone Laboratories, Incorporated Bidirectional switch using two gated diode switches in a single dielectrically isolated tub

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1547287A (fr) * 1966-12-19 1968-11-22 Lucas Industries Ltd Diode semiconductrice
US3417393A (en) * 1967-10-18 1968-12-17 Texas Instruments Inc Integrated circuit modular radar antenna
JPS4933432B1 (fr) * 1968-12-20 1974-09-06
DE2102103A1 (de) * 1970-01-22 1971-07-29 Rca Corp Durch Feldeffekt gesteuerte Diode
US3722079A (en) * 1970-06-05 1973-03-27 Radiation Inc Process for forming buried layers to reduce collector resistance in top contact transistors
DE2241600A1 (de) * 1971-08-26 1973-03-01 Dionics Inc Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung
JPS5032942U (fr) * 1973-07-23 1975-04-10
US3911463A (en) * 1974-01-07 1975-10-07 Gen Electric Planar unijunction transistor
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same

Also Published As

Publication number Publication date
IE48892B1 (en) 1985-06-12
IN153497B (fr) 1984-07-21
IT7928206A0 (it) 1979-12-19
HU181030B (en) 1983-05-30
GB2049283B (en) 1983-07-27
CH659151A5 (de) 1986-12-31
SE8005703L (sv) 1980-08-13
AU5386679A (en) 1980-06-26
SE446139B (sv) 1986-08-11
AU529702B2 (en) 1983-06-16
DD147897A5 (de) 1981-04-22
IL58970A0 (en) 1980-03-31
JPS6412106B2 (fr) 1989-02-28
IL58970A (en) 1982-07-30
FR2445026A1 (fr) 1980-07-18
IT1126603B (it) 1986-05-21
IE792474L (en) 1980-06-20
GB2049283A (en) 1980-12-17
SG32884G (en) 1985-02-08
NL7920184A (nl) 1980-10-31
JPS55501079A (fr) 1980-12-04
KR830002293B1 (ko) 1983-10-21
WO1980001337A1 (fr) 1980-06-26
KR830001743A (ko) 1983-05-18
FR2445026B1 (fr) 1983-08-19
PL220494A1 (fr) 1980-09-08

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19970519