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JPS5655068A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS5655068A
JPS5655068A JP13003079A JP13003079A JPS5655068A JP S5655068 A JPS5655068 A JP S5655068A JP 13003079 A JP13003079 A JP 13003079A JP 13003079 A JP13003079 A JP 13003079A JP S5655068 A JPS5655068 A JP S5655068A
Authority
JP
Japan
Prior art keywords
turn
gate
auxiliary
electrode
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13003079A
Other languages
Japanese (ja)
Inventor
Hiroshi Fukui
Arata Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13003079A priority Critical patent/JPS5655068A/en
Publication of JPS5655068A publication Critical patent/JPS5655068A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE:To prevent erroneous firing of an auxiliary thyristor portion at the time of turn-off by increasing the turn-off sensitivity of a gate-turn-off thyristor by providing a high resistance layer around an auxiliary emitter layer. CONSTITUTION:When a voltage is applied between a gate lead G1 and a cathode lead K in a direction that the G1 becomes positive, a turn-on gate current will flow from the G1 through an auxiliary emitter layer 9 and an electrode 3 and through a main gate electrode 2 and a main emitter region 5 to a cathode electrode 1. Since an auxiliary thyristor region is surrounded by a high resistance layer region 13 formed by diffusing a cathode and base layer and the turn-of gate current igon will almost flow to the auxiliary emitter layer 9, a gate sensitivity becomes high. Since the auxiliary emitter electrode 3 does not ohmically contact with the P type base layer 6, the forward voltage drop occurred at the diode 10 serves to reversely biad the junction of the auxiliary emitter and accelerate the turn-off operation.
JP13003079A 1979-10-11 1979-10-11 Thyristor Pending JPS5655068A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13003079A JPS5655068A (en) 1979-10-11 1979-10-11 Thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13003079A JPS5655068A (en) 1979-10-11 1979-10-11 Thyristor

Publications (1)

Publication Number Publication Date
JPS5655068A true JPS5655068A (en) 1981-05-15

Family

ID=15024408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13003079A Pending JPS5655068A (en) 1979-10-11 1979-10-11 Thyristor

Country Status (1)

Country Link
JP (1) JPS5655068A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63177467A (en) * 1986-09-29 1988-07-21 Toshiba Corp semiconductor equipment
JPH01258476A (en) * 1988-04-08 1989-10-16 Toshiba Corp High breakdown voltage semiconductor device and manufacture thereof
EP0714139A1 (en) * 1994-11-25 1996-05-29 STMicroelectronics S.A. Break-over triggered two-terminal device with controlled sensitivity

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63177467A (en) * 1986-09-29 1988-07-21 Toshiba Corp semiconductor equipment
JPH01258476A (en) * 1988-04-08 1989-10-16 Toshiba Corp High breakdown voltage semiconductor device and manufacture thereof
EP0714139A1 (en) * 1994-11-25 1996-05-29 STMicroelectronics S.A. Break-over triggered two-terminal device with controlled sensitivity
FR2727571A1 (en) * 1994-11-25 1996-05-31 Sgs Thomson Microelectronics THYRISTOR WITH SENSITIVITY IN CONTROLLED RETURN
US5861639A (en) * 1994-11-25 1999-01-19 Sgs-Thomson Microelectronics S.A. Breakover-triggered dipole component having a controlled sensitivity

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