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JPS568882A - High dielectric strength field effect semiconductor device - Google Patents

High dielectric strength field effect semiconductor device

Info

Publication number
JPS568882A
JPS568882A JP8470779A JP8470779A JPS568882A JP S568882 A JPS568882 A JP S568882A JP 8470779 A JP8470779 A JP 8470779A JP 8470779 A JP8470779 A JP 8470779A JP S568882 A JPS568882 A JP S568882A
Authority
JP
Japan
Prior art keywords
source
region
base
current
dielectric strength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8470779A
Other languages
Japanese (ja)
Inventor
Katsumasa Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP8470779A priority Critical patent/JPS568882A/en
Publication of JPS568882A publication Critical patent/JPS568882A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To raise dielectric strength by electrically connecting a base region with a source region of a double diffusing type insulating gate FET wherein the stabilization of drain current is contrived. CONSTITUTION:A base region 5 of double diffused structure is provided around a source region 4 wherein the base region is extended from a gate region 5a to a contat curface 5b with a source electrode 8. And the electrode 8 is connected with the source and base. The contact resistance with the source electrode is reduced by a high concentration layer 11. Furthermore, an increase in the amount of current is tried by widening the gate width. This structure permits the current to flow into the source region 4 through the base region 5 even if impact ionization occurs. But few current will flow into a low concentration and high resistance substrate 1. Therefore, a back gate voltage becomes small and the potential drops at the base and source regions are remarkably reduced. A forward voltage applied to a junction between the P-type base 5 and the N-type source 4 becomes small. A kink phenomenon occurring at low gate voltage will be eliminated and ON dielectric strength will be improved at high gate voltage.
JP8470779A 1979-07-03 1979-07-03 High dielectric strength field effect semiconductor device Pending JPS568882A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8470779A JPS568882A (en) 1979-07-03 1979-07-03 High dielectric strength field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8470779A JPS568882A (en) 1979-07-03 1979-07-03 High dielectric strength field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS568882A true JPS568882A (en) 1981-01-29

Family

ID=13838126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8470779A Pending JPS568882A (en) 1979-07-03 1979-07-03 High dielectric strength field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS568882A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710975A (en) * 1980-06-25 1982-01-20 Sanyo Electric Co Ltd High dielectric strength high transistor
JPS5712558A (en) * 1980-06-25 1982-01-22 Sanyo Electric Co Ltd Mos transistor having high withstand voltage
JPS5712557A (en) * 1980-06-25 1982-01-22 Sanyo Electric Co Ltd High dielectric resisting mos transistor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IEEE INTERNATIONAL SOLID-STATO CIRCUITS OONFERENCE=1976 *
IEEE JOUNAL OF SOLID STATE CIRCUIT=1975 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710975A (en) * 1980-06-25 1982-01-20 Sanyo Electric Co Ltd High dielectric strength high transistor
JPS5712558A (en) * 1980-06-25 1982-01-22 Sanyo Electric Co Ltd Mos transistor having high withstand voltage
JPS5712557A (en) * 1980-06-25 1982-01-22 Sanyo Electric Co Ltd High dielectric resisting mos transistor

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