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JPS5712557A - High dielectric resisting mos transistor - Google Patents

High dielectric resisting mos transistor

Info

Publication number
JPS5712557A
JPS5712557A JP8687880A JP8687880A JPS5712557A JP S5712557 A JPS5712557 A JP S5712557A JP 8687880 A JP8687880 A JP 8687880A JP 8687880 A JP8687880 A JP 8687880A JP S5712557 A JPS5712557 A JP S5712557A
Authority
JP
Japan
Prior art keywords
channel
bent section
curvature
drain
high dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8687880A
Other languages
Japanese (ja)
Inventor
Tadahiko Tanaka
Tsutomu Nozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP8687880A priority Critical patent/JPS5712557A/en
Publication of JPS5712557A publication Critical patent/JPS5712557A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To enable high dielectric resistance by sufficiently making the curvature of a bent section of a channel formed to a tip section of a source region larger than the curvature of a bent section corresponding to a drain region. CONSTITUTION:The N<+> type source region 22 and the drain region 23 are formed to an N<-> epitaxial layer 24 on a P type Si substrate 21 in comblike shapes, and a P type channel 25 having predetermined concentration is molded between the regions through ion injection. The curvature R' of the bent section of the channel at the tip of the source 22 is sufficiently made larger than the curvature R of the bent section of a root of the corresponding drain 23, and the length l' of the N<-> layer 24 up to the channel 25 from the drain 23 is made longer than the length l of other sections. Accordingly, an electric line of force proceeding toward the bent section of the channel 25 from the root of the drain 23 is lengthened, while an electric field is weakened, the concentration of currents is prevented and dielectric resistance is improved.
JP8687880A 1980-06-25 1980-06-25 High dielectric resisting mos transistor Pending JPS5712557A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8687880A JPS5712557A (en) 1980-06-25 1980-06-25 High dielectric resisting mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8687880A JPS5712557A (en) 1980-06-25 1980-06-25 High dielectric resisting mos transistor

Publications (1)

Publication Number Publication Date
JPS5712557A true JPS5712557A (en) 1982-01-22

Family

ID=13899084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8687880A Pending JPS5712557A (en) 1980-06-25 1980-06-25 High dielectric resisting mos transistor

Country Status (1)

Country Link
JP (1) JPS5712557A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5258636A (en) * 1991-12-12 1993-11-02 Power Integrations, Inc. Narrow radius tips for high voltage semiconductor devices with interdigitated source and drain electrodes
US6168983B1 (en) 1996-11-05 2001-01-02 Power Integrations, Inc. Method of making a high-voltage transistor with multiple lateral conduction layers
US6207994B1 (en) 1996-11-05 2001-03-27 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6501130B2 (en) 2001-01-24 2002-12-31 Power Integrations, Inc. High-voltage transistor with buried conduction layer
US6509220B2 (en) 2000-11-27 2003-01-21 Power Integrations, Inc. Method of fabricating a high-voltage transistor
US6635544B2 (en) 2001-09-07 2003-10-21 Power Intergrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US6639277B2 (en) 1996-11-05 2003-10-28 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6768171B2 (en) 2000-11-27 2004-07-27 Power Integrations, Inc. High-voltage transistor with JFET conduction channels
US6781198B2 (en) 2001-09-07 2004-08-24 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
US6815293B2 (en) 2001-09-07 2004-11-09 Power Intergrations, Inc. High-voltage lateral transistor with a multi-layered extended drain structure
US7115958B2 (en) 2001-10-29 2006-10-03 Power Integrations, Inc. Lateral power MOSFET for high switching speeds
US9601613B2 (en) 2007-02-16 2017-03-21 Power Integrations, Inc. Gate pullback at ends of high-voltage vertical transistor structure
US9660053B2 (en) 2013-07-12 2017-05-23 Power Integrations, Inc. High-voltage field-effect transistor having multiple implanted layers
US10325988B2 (en) 2013-12-13 2019-06-18 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped field plates

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS568882A (en) * 1979-07-03 1981-01-29 Sharp Corp High dielectric strength field effect semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS568882A (en) * 1979-07-03 1981-01-29 Sharp Corp High dielectric strength field effect semiconductor device

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5258636A (en) * 1991-12-12 1993-11-02 Power Integrations, Inc. Narrow radius tips for high voltage semiconductor devices with interdigitated source and drain electrodes
US6768172B2 (en) 1996-11-05 2004-07-27 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6787437B2 (en) 1996-11-05 2004-09-07 Power Integrations, Inc. Method of making a high-voltage transistor with buried conduction regions
US6777749B2 (en) 1996-11-05 2004-08-17 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6828631B2 (en) 1996-11-05 2004-12-07 Power Integrations, Inc High-voltage transistor with multi-layer conduction region
US6800903B2 (en) 1996-11-05 2004-10-05 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6570219B1 (en) 1996-11-05 2003-05-27 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6633065B2 (en) 1996-11-05 2003-10-14 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6207994B1 (en) 1996-11-05 2001-03-27 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6639277B2 (en) 1996-11-05 2003-10-28 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6168983B1 (en) 1996-11-05 2001-01-02 Power Integrations, Inc. Method of making a high-voltage transistor with multiple lateral conduction layers
US6724041B2 (en) 1996-11-05 2004-04-20 Power Integrations, Inc. Method of making a high-voltage transistor with buried conduction regions
US6509220B2 (en) 2000-11-27 2003-01-21 Power Integrations, Inc. Method of fabricating a high-voltage transistor
US6768171B2 (en) 2000-11-27 2004-07-27 Power Integrations, Inc. High-voltage transistor with JFET conduction channels
US6504209B2 (en) 2001-01-24 2003-01-07 Power Integrations, Inc. High-voltage transistor with buried conduction layer
US6501130B2 (en) 2001-01-24 2002-12-31 Power Integrations, Inc. High-voltage transistor with buried conduction layer
US6818490B2 (en) 2001-01-24 2004-11-16 Power Integrations, Inc. Method of fabricating complementary high-voltage field-effect transistors
US6750105B2 (en) 2001-09-07 2004-06-15 Power Integrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US6787847B2 (en) 2001-09-07 2004-09-07 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
US6781198B2 (en) 2001-09-07 2004-08-24 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
US6815293B2 (en) 2001-09-07 2004-11-09 Power Intergrations, Inc. High-voltage lateral transistor with a multi-layered extended drain structure
US6635544B2 (en) 2001-09-07 2003-10-21 Power Intergrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US6667213B2 (en) 2001-09-07 2003-12-23 Power Integrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US6838346B2 (en) 2001-09-07 2005-01-04 Power Integrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US6882005B2 (en) 2001-09-07 2005-04-19 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
US6987299B2 (en) 2001-09-07 2006-01-17 Power Integrations, Inc. High-voltage lateral transistor with a multi-layered extended drain structure
US7115958B2 (en) 2001-10-29 2006-10-03 Power Integrations, Inc. Lateral power MOSFET for high switching speeds
US9601613B2 (en) 2007-02-16 2017-03-21 Power Integrations, Inc. Gate pullback at ends of high-voltage vertical transistor structure
US9660053B2 (en) 2013-07-12 2017-05-23 Power Integrations, Inc. High-voltage field-effect transistor having multiple implanted layers
US10325988B2 (en) 2013-12-13 2019-06-18 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped field plates

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