JPS55113378A - Semiconductor device and its manufacturing method - Google Patents
Semiconductor device and its manufacturing methodInfo
- Publication number
- JPS55113378A JPS55113378A JP1981179A JP1981179A JPS55113378A JP S55113378 A JPS55113378 A JP S55113378A JP 1981179 A JP1981179 A JP 1981179A JP 1981179 A JP1981179 A JP 1981179A JP S55113378 A JPS55113378 A JP S55113378A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- gate
- type
- sections
- crossing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 6
- 238000009792 diffusion process Methods 0.000 abstract 2
- 108091006146 Channels Proteins 0.000 abstract 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
Landscapes
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To heighten gm, to decrease noise and to improve high frequency characteristics by extending a part or the whole of meshgate crossing section toward the side of substrate and by connecting it to substrate gate.
CONSTITUTION: An n--type semiconductor layer 4 which becomes channel region, and a p-type channel isolation layer 2, a mesh type gate 3 consisting of p-type diffusion layer and source drain lead out sections 5 consisting of n+-type diffusion layer are formed on a p-type Si substrate 1 which becomes substrate gate, and electrodes of source S and drain D are provided on the leat out sections 5. And the crossing sections 6 of gates 3 are connected to substrate gate 1 by gate short-circuit sections 7 consisting of p-type semiconductor regions. In this case, crossing sections 6 perform almost no FET function, so there will be no decrease of gm. Besides, the voltage is applied from substrate 1 through short-circuit section 7, so gate resistance is small. Noise can be decreased greatly and high frequency characteristics can be improved greatly.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1981179A JPS55113378A (en) | 1979-02-23 | 1979-02-23 | Semiconductor device and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1981179A JPS55113378A (en) | 1979-02-23 | 1979-02-23 | Semiconductor device and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55113378A true JPS55113378A (en) | 1980-09-01 |
Family
ID=12009706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1981179A Pending JPS55113378A (en) | 1979-02-23 | 1979-02-23 | Semiconductor device and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55113378A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7078775B2 (en) | 2003-04-18 | 2006-07-18 | Samsung Electronics Co., Ltd. | MOS transistor having a mesh-type gate electrode |
| JP2013528930A (en) * | 2010-04-13 | 2013-07-11 | ジーエーエヌ システムズ インコーポレイテッド | High density gallium nitride device using island topology |
| US9153509B2 (en) | 2009-08-04 | 2015-10-06 | Gan Systems Inc. | Fault tolerant design for large area nitride semiconductor devices |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5489582A (en) * | 1977-12-27 | 1979-07-16 | Nec Corp | Junction type field effect transistor |
-
1979
- 1979-02-23 JP JP1981179A patent/JPS55113378A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5489582A (en) * | 1977-12-27 | 1979-07-16 | Nec Corp | Junction type field effect transistor |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7078775B2 (en) | 2003-04-18 | 2006-07-18 | Samsung Electronics Co., Ltd. | MOS transistor having a mesh-type gate electrode |
| US9153509B2 (en) | 2009-08-04 | 2015-10-06 | Gan Systems Inc. | Fault tolerant design for large area nitride semiconductor devices |
| US9818857B2 (en) | 2009-08-04 | 2017-11-14 | Gan Systems Inc. | Fault tolerant design for large area nitride semiconductor devices |
| JP2013528930A (en) * | 2010-04-13 | 2013-07-11 | ジーエーエヌ システムズ インコーポレイテッド | High density gallium nitride device using island topology |
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