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JPS56158480A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS56158480A
JPS56158480A JP6167880A JP6167880A JPS56158480A JP S56158480 A JPS56158480 A JP S56158480A JP 6167880 A JP6167880 A JP 6167880A JP 6167880 A JP6167880 A JP 6167880A JP S56158480 A JPS56158480 A JP S56158480A
Authority
JP
Japan
Prior art keywords
layer
channel
insulating film
fet
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6167880A
Other languages
Japanese (ja)
Other versions
JPS623988B2 (en
Inventor
Yasuhisa Omura
Kotaro Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6167880A priority Critical patent/JPS56158480A/en
Publication of JPS56158480A publication Critical patent/JPS56158480A/en
Publication of JPS623988B2 publication Critical patent/JPS623988B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain the FET wherein currents are not saturated, by providing a semiconductor layer having a same conductive-type high-concentration layer and a reverse conductive-type high-concentration layer on both sides of a channel region on an insulating substrate, and providing a gate electrode on the channel region via an insulating film. CONSTITUTION:The insulating film 11 is provided on the surface of a semiconductor substrate 10, and the semiconductor layer comprising, e.g., an N<+> high concentration layer 13, an N type channel layer 12, and a P<+> high concentration layer 14 are formed. A shalow N<+> layer which prevents the depletion is formed in a part of the channel layer 12. The gate electrode 16 is provided on the top of the channel layer 12 via the insulating film 9'. A source electrode 8 and a drain electrode 9 are provided on each high concentration layers. The operating condition is set so that VD-VS>0, where VS is a substrate potential. In this FET, since the conductive channel spread from the boundary with the insulating film 11 when VG is increased, and the current component is caused by the alternating injections of electrons and holes in a junction region, the current is not saturated with respect to VD. Therefore the FET having a high current gain can be obtained.
JP6167880A 1980-05-12 1980-05-12 Field effect transistor Granted JPS56158480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6167880A JPS56158480A (en) 1980-05-12 1980-05-12 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6167880A JPS56158480A (en) 1980-05-12 1980-05-12 Field effect transistor

Publications (2)

Publication Number Publication Date
JPS56158480A true JPS56158480A (en) 1981-12-07
JPS623988B2 JPS623988B2 (en) 1987-01-28

Family

ID=13178148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6167880A Granted JPS56158480A (en) 1980-05-12 1980-05-12 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS56158480A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5128731A (en) * 1990-06-13 1992-07-07 Integrated Device Technology, Inc. Static random access memory cell using a P/N-MOS transistors

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6816046B2 (en) 2018-02-06 2021-01-20 アオイ電子株式会社 Manufacturing method of semiconductor devices
JP2021141142A (en) 2020-03-03 2021-09-16 キオクシア株式会社 Manufacturing method and support for semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5128731A (en) * 1990-06-13 1992-07-07 Integrated Device Technology, Inc. Static random access memory cell using a P/N-MOS transistors

Also Published As

Publication number Publication date
JPS623988B2 (en) 1987-01-28

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