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KR830002293B1 - 고압용 게이트 다이오드 스위치 - Google Patents

고압용 게이트 다이오드 스위치 Download PDF

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Publication number
KR830002293B1
KR830002293B1 KR1019790004540A KR790004540A KR830002293B1 KR 830002293 B1 KR830002293 B1 KR 830002293B1 KR 1019790004540 A KR1019790004540 A KR 1019790004540A KR 790004540 A KR790004540 A KR 790004540A KR 830002293 B1 KR830002293 B1 KR 830002293B1
Authority
KR
South Korea
Prior art keywords
region
microns
cathode
gate
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019790004540A
Other languages
English (en)
Korean (ko)
Other versions
KR830001743A (ko
Inventor
어네스트 베르톨드 죠셉
랠프 하트만 아드리안
레드 우르크하트 맥래 알프
제임스 릴리 테렌스
윌리암 색클 피터
Original Assignee
알. 씨. 윈터
웨스턴 이렉트릭 컴패니, 인코퍼레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 알. 씨. 윈터, 웨스턴 이렉트릭 컴패니, 인코퍼레이티드 filed Critical 알. 씨. 윈터
Publication of KR830001743A publication Critical patent/KR830001743A/ko
Application granted granted Critical
Publication of KR830002293B1 publication Critical patent/KR830002293B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Compression, Expansion, Code Conversion, And Decoders (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
KR1019790004540A 1978-12-20 1979-12-20 고압용 게이트 다이오드 스위치 Expired KR830002293B1 (ko)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US97202178A 1978-12-20 1978-12-20
US97205678A 1978-12-20 1978-12-20
US97202278A 1978-12-20 1978-12-20
US972056 1978-12-20
US?972056? 1978-12-20
US972021 1978-12-20
US?972022? 1978-12-20
US?972021? 1978-12-20
US972022 1978-12-20

Publications (2)

Publication Number Publication Date
KR830001743A KR830001743A (ko) 1983-05-18
KR830002293B1 true KR830002293B1 (ko) 1983-10-21

Family

ID=27420763

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019790004540A Expired KR830002293B1 (ko) 1978-12-20 1979-12-20 고압용 게이트 다이오드 스위치

Country Status (18)

Country Link
JP (1) JPS6412106B2 (fr)
KR (1) KR830002293B1 (fr)
AU (1) AU529702B2 (fr)
CH (1) CH659151A5 (fr)
DD (1) DD147897A5 (fr)
ES (1) ES487066A1 (fr)
FR (1) FR2445026A1 (fr)
GB (1) GB2049283B (fr)
HU (1) HU181030B (fr)
IE (1) IE48892B1 (fr)
IL (1) IL58970A (fr)
IN (1) IN153497B (fr)
IT (1) IT1126603B (fr)
NL (1) NL7920184A (fr)
PL (1) PL220494A1 (fr)
SE (1) SE446139B (fr)
SG (1) SG32884G (fr)
WO (1) WO1980001337A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4242697A (en) * 1979-03-14 1980-12-30 Bell Telephone Laboratories, Incorporated Dielectrically isolated high voltage semiconductor devices
CA1145057A (fr) * 1979-12-28 1983-04-19 Adrian R. Hartman Commutateur a semiconducteur pour hautes tensions
GB2113005B (en) * 1981-03-27 1985-05-09 Western Electric Co Gated diode switch
US4467344A (en) * 1981-12-23 1984-08-21 At&T Bell Telephone Laboratories, Incorporated Bidirectional switch using two gated diode switches in a single dielectrically isolated tub

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1547287A (fr) * 1966-12-19 1968-11-22 Lucas Industries Ltd Diode semiconductrice
US3417393A (en) * 1967-10-18 1968-12-17 Texas Instruments Inc Integrated circuit modular radar antenna
JPS4933432B1 (fr) * 1968-12-20 1974-09-06
DE2102103A1 (de) * 1970-01-22 1971-07-29 Rca Corp Durch Feldeffekt gesteuerte Diode
US3722079A (en) * 1970-06-05 1973-03-27 Radiation Inc Process for forming buried layers to reduce collector resistance in top contact transistors
DE2241600A1 (de) * 1971-08-26 1973-03-01 Dionics Inc Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung
JPS5032942U (fr) * 1973-07-23 1975-04-10
US3911463A (en) * 1974-01-07 1975-10-07 Gen Electric Planar unijunction transistor
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same

Also Published As

Publication number Publication date
WO1980001337A1 (fr) 1980-06-26
ES487066A1 (es) 1980-09-16
IL58970A0 (en) 1980-03-31
PL220494A1 (fr) 1980-09-08
CH659151A5 (de) 1986-12-31
KR830001743A (ko) 1983-05-18
AU5386679A (en) 1980-06-26
FR2445026B1 (fr) 1983-08-19
JPS6412106B2 (fr) 1989-02-28
IE792474L (en) 1980-06-20
DD147897A5 (de) 1981-04-22
GB2049283A (en) 1980-12-17
IL58970A (en) 1982-07-30
FR2445026A1 (fr) 1980-07-18
AU529702B2 (en) 1983-06-16
JPS55501079A (fr) 1980-12-04
NL7920184A (nl) 1980-10-31
IT7928206A0 (it) 1979-12-19
IE48892B1 (en) 1985-06-12
GB2049283B (en) 1983-07-27
IN153497B (fr) 1984-07-21
SE446139B (sv) 1986-08-11
IT1126603B (it) 1986-05-21
HU181030B (en) 1983-05-30
SE8005703L (sv) 1980-08-13
SG32884G (en) 1985-02-08

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