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EP0997950A3 - Method of improving the crystallization of semiconductor films particularly for thin film transistors - Google Patents

Method of improving the crystallization of semiconductor films particularly for thin film transistors Download PDF

Info

Publication number
EP0997950A3
EP0997950A3 EP99124492A EP99124492A EP0997950A3 EP 0997950 A3 EP0997950 A3 EP 0997950A3 EP 99124492 A EP99124492 A EP 99124492A EP 99124492 A EP99124492 A EP 99124492A EP 0997950 A3 EP0997950 A3 EP 0997950A3
Authority
EP
European Patent Office
Prior art keywords
semiconductor film
crystallization
thin film
amorphous semiconductor
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP99124492A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP0997950A2 (en
Inventor
Toru Takayama
Hongyong Zhang
Shunpei Yamazaki
Yasuhiko Takemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of EP0997950A2 publication Critical patent/EP0997950A2/en
Publication of EP0997950A3 publication Critical patent/EP0997950A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H01L21/205—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
EP99124492A 1993-02-03 1994-02-02 Method of improving the crystallization of semiconductor films particularly for thin film transistors Withdrawn EP0997950A3 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP3949993 1993-02-03
JP03949993A JP3497198B2 (ja) 1993-02-03 1993-02-03 半導体装置および薄膜トランジスタの作製方法
EP94101571A EP0609867A3 (en) 1993-02-03 1994-02-02 Manufacturing method of a crystallized semiconductor layer and manufacturing method of a semiconductor device.

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
EP94101571A Division EP0609867A3 (en) 1993-02-03 1994-02-02 Manufacturing method of a crystallized semiconductor layer and manufacturing method of a semiconductor device.

Publications (2)

Publication Number Publication Date
EP0997950A2 EP0997950A2 (en) 2000-05-03
EP0997950A3 true EP0997950A3 (en) 2009-01-28

Family

ID=12554743

Family Applications (3)

Application Number Title Priority Date Filing Date
EP94101571A Ceased EP0609867A3 (en) 1993-02-03 1994-02-02 Manufacturing method of a crystallized semiconductor layer and manufacturing method of a semiconductor device.
EP01124710A Withdrawn EP1207549A3 (en) 1993-02-03 1994-02-02 Method for fabricating a semiconductor device
EP99124492A Withdrawn EP0997950A3 (en) 1993-02-03 1994-02-02 Method of improving the crystallization of semiconductor films particularly for thin film transistors

Family Applications Before (2)

Application Number Title Priority Date Filing Date
EP94101571A Ceased EP0609867A3 (en) 1993-02-03 1994-02-02 Manufacturing method of a crystallized semiconductor layer and manufacturing method of a semiconductor device.
EP01124710A Withdrawn EP1207549A3 (en) 1993-02-03 1994-02-02 Method for fabricating a semiconductor device

Country Status (6)

Country Link
US (1) US6610142B1 (ko)
EP (3) EP0609867A3 (ko)
JP (1) JP3497198B2 (ko)
KR (5) KR0168693B1 (ko)
CN (5) CN100416750C (ko)
TW (1) TW266315B (ko)

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6997985B1 (en) 1993-02-15 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
CN1052110C (zh) 1993-02-15 2000-05-03 株式会社半导体能源研究所 制造半导体器件的方法
US5834827A (en) * 1994-06-15 1998-11-10 Seiko Epson Corporation Thin film semiconductor device, fabrication method thereof, electronic device and its fabrication method
CN1274009C (zh) 1994-06-15 2006-09-06 精工爱普生株式会社 薄膜半导体器件的制造方法
JPH0855848A (ja) * 1994-08-11 1996-02-27 Semiconductor Energy Lab Co Ltd 酸化珪素膜の加熱処理方法
JP3897826B2 (ja) * 1994-08-19 2007-03-28 株式会社半導体エネルギー研究所 アクティブマトリクス型の表示装置
JP3442500B2 (ja) 1994-08-31 2003-09-02 株式会社半導体エネルギー研究所 半導体回路の作製方法
US5915174A (en) * 1994-09-30 1999-06-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing the same
JP4130237B2 (ja) * 1995-01-28 2008-08-06 株式会社半導体エネルギー研究所 結晶性珪素膜の作製方法及び半導体装置の作製方法
TW305063B (ko) 1995-02-02 1997-05-11 Handotai Energy Kenkyusho Kk
US7075002B1 (en) 1995-03-27 2006-07-11 Semiconductor Energy Laboratory Company, Ltd. Thin-film photoelectric conversion device and a method of manufacturing the same
TW463378B (en) 1995-06-01 2001-11-11 Semiconductor Energy Lab Method of manufacturing semiconductor device
US6228751B1 (en) 1995-09-08 2001-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
TW371796B (en) 1995-09-08 1999-10-11 Semiconductor Energy Lab Co Ltd Method and apparatus for manufacturing a semiconductor device
JP3235817B2 (ja) * 1995-09-21 2001-12-04 シャープ株式会社 半導体回路、半導体装置およびそれらの製造方法
US6204101B1 (en) 1995-12-15 2001-03-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TW319912B (ko) * 1995-12-15 1997-11-11 Handotai Energy Kenkyusho Kk
JP3645380B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置
JP3645378B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6478263B1 (en) 1997-01-17 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP3645379B2 (ja) * 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3729955B2 (ja) 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6180439B1 (en) 1996-01-26 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device
US7056381B1 (en) 1996-01-26 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device
JP3476320B2 (ja) * 1996-02-23 2003-12-10 株式会社半導体エネルギー研究所 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法
TW317643B (ko) 1996-02-23 1997-10-11 Handotai Energy Kenkyusho Kk
TW335503B (en) 1996-02-23 1998-07-01 Semiconductor Energy Lab Kk Semiconductor thin film and manufacturing method and semiconductor device and its manufacturing method
TW374196B (en) 1996-02-23 1999-11-11 Semiconductor Energy Lab Co Ltd Semiconductor thin film and method for manufacturing the same and semiconductor device and method for manufacturing the same
US6100562A (en) 1996-03-17 2000-08-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
TW548686B (en) 1996-07-11 2003-08-21 Semiconductor Energy Lab CMOS semiconductor device and apparatus using the same
US8603870B2 (en) 1996-07-11 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6369410B1 (en) 1997-12-15 2002-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
US6396147B1 (en) 1998-05-16 2002-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with metal-oxide conductors
US6362027B1 (en) 1998-07-08 2002-03-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, active matrix substrate, method of manufacturing the semiconductor device and method of manufacturing the active matrix substrate
JP3592535B2 (ja) 1998-07-16 2004-11-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4030193B2 (ja) 1998-07-16 2008-01-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6294441B1 (en) 1998-08-18 2001-09-25 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6380007B1 (en) 1998-12-28 2002-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US6878968B1 (en) 1999-05-10 2005-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6680487B1 (en) 1999-05-14 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor comprising a TFT provided on a substrate having an insulating surface and method of fabricating the same
JP4298131B2 (ja) 1999-05-14 2009-07-15 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
TW459275B (en) 1999-07-06 2001-10-11 Semiconductor Energy Lab Semiconductor device and method of fabricating the same
JP3599679B2 (ja) * 2000-04-04 2004-12-08 松下電器産業株式会社 薄膜トランジスタの製造方法
KR100840423B1 (ko) 2000-04-04 2008-06-20 마쯔시다덴기산교 가부시키가이샤 박막의 제조방법 및 그 제조장치, 그리고 박막트랜지스터및 그 제조방법
JP4558140B2 (ja) * 2000-05-02 2010-10-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2001326175A (ja) * 2000-05-12 2001-11-22 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US6875674B2 (en) 2000-07-10 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device with fluorine concentration
US7332273B2 (en) * 2002-06-20 2008-02-19 Affymetrix, Inc. Antireflective coatings for high-resolution photolithographic synthesis of DNA arrays
US20070275411A1 (en) 2006-05-25 2007-11-29 Mcgall Glenn H Silane mixtures
EP1445802A1 (en) * 2003-02-06 2004-08-11 Centre National De La Recherche Scientifique (Cnrs) Transistor for active matrix display, a display unit comprising the said transistor and a method for producing said transistor
TWI227565B (en) * 2003-04-16 2005-02-01 Au Optronics Corp Low temperature poly-Si thin film transistor and method of manufacturing the same
SG115733A1 (en) 2004-03-12 2005-10-28 Semiconductor Energy Lab Thin film transistor, semiconductor device, and method for manufacturing the same
KR100738068B1 (ko) * 2004-08-20 2007-07-12 삼성전자주식회사 산화 환원 반응을 이용한 귀금속 전극 형성 방법
JP4730034B2 (ja) * 2005-09-20 2011-07-20 日新電機株式会社 シリコンドット付き基板の形成方法
JP4497068B2 (ja) * 2005-09-26 2010-07-07 日新電機株式会社 シリコンドット形成方法及びシリコンドット形成装置
WO2008104346A2 (en) * 2007-02-27 2008-09-04 Carl Zeiss Laser Optics Gmbh Continuous coating installation and methods for producing crystalline thin films and solar cells
WO2008150769A2 (en) * 2007-05-31 2008-12-11 Thinsilicon Corporation Photovoltaic device and method of manufacturing photovoltaic devices
US8030147B2 (en) 2007-09-14 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and display device including the thin film transistor
JP5311957B2 (ja) * 2007-10-23 2013-10-09 株式会社半導体エネルギー研究所 表示装置及びその作製方法
JP5311955B2 (ja) 2007-11-01 2013-10-09 株式会社半導体エネルギー研究所 表示装置の作製方法
US8187956B2 (en) * 2007-12-03 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing microcrystalline semiconductor film, thin film transistor having microcrystalline semiconductor film, and photoelectric conversion device having microcrystalline semiconductor film
US8591650B2 (en) * 2007-12-03 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for forming crystalline semiconductor film, method for manufacturing thin film transistor, and method for manufacturing display device
JP2009272402A (ja) * 2008-05-02 2009-11-19 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
CN101746547B (zh) * 2008-12-08 2011-04-20 中国石油天然气股份有限公司 改性沥青包装薄膜袋及其制备方法
EP2441095A4 (en) * 2009-06-10 2013-07-03 Thinsilicon Corp PV MODULES AND METHOD FOR PRODUCING PV MODULES WITH TANDEM SEMICONDUCTOR LAYERING PLATES
US8258025B2 (en) * 2009-08-07 2012-09-04 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing microcrystalline semiconductor film and thin film transistor
US8343858B2 (en) 2010-03-02 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing microcrystalline semiconductor film and method for manufacturing semiconductor device
CN103634960A (zh) * 2013-12-06 2014-03-12 阳泉市新鑫科技研究所有限责任公司 等离子氦气和氙气高压气体发热装置
CN111279458B (zh) 2017-07-31 2023-10-27 康宁股份有限公司 制造多晶硅的闪光灯退火方法
TWI750375B (zh) * 2018-05-16 2021-12-21 力智電子股份有限公司 溝槽閘極金氧半場效電晶體及其製造方法
CN111564365A (zh) * 2020-04-10 2020-08-21 中国科学院微电子研究所 一种沉积薄膜的方法及其应用、形成半导体有源区的方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57194518A (en) * 1981-05-27 1982-11-30 Toshiba Corp Manufacture of polycrystalline silicon
JPH02140915A (ja) * 1988-11-22 1990-05-30 Seiko Epson Corp 半導体装置の製造方法
JPH03257828A (ja) * 1990-03-07 1991-11-18 Toshiba Corp 半導体装置の製造方法
EP0459763A1 (en) * 1990-05-29 1991-12-04 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistors
WO1992001089A1 (en) * 1990-07-03 1992-01-23 Gec-Marconi Limited Crystallisation process
JPH0462976A (ja) * 1990-06-30 1992-02-27 Nippon Seiki Co Ltd 加速度センサの製造方法
EP0502749A2 (en) * 1991-03-06 1992-09-09 Semiconductor Energy Laboratory Co., Ltd. Gate structure of field effect device and method for forming the same
US5147826A (en) * 1990-08-06 1992-09-15 The Pennsylvania Research Corporation Low temperature crystallization and pattering of amorphous silicon films

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE28385E (en) 1968-03-20 1975-04-08 Method of treating semiconductor devices
US3556880A (en) 1968-04-11 1971-01-19 Rca Corp Method of treating semiconductor devices to improve lifetime
US3783049A (en) 1971-03-31 1974-01-01 Trw Inc Method of platinum diffusion
US4231809A (en) 1979-05-25 1980-11-04 Bell Telephone Laboratories, Incorporated Method of removing impurity metals from semiconductor devices
JPS5833822A (ja) * 1981-08-21 1983-02-28 Mitsubishi Electric Corp 半導体基体の製作方法
JPS58130517A (ja) * 1982-01-29 1983-08-04 Hitachi Ltd 単結晶薄膜の製造方法
AT380974B (de) 1982-04-06 1986-08-11 Shell Austria Verfahren zum gettern von halbleiterbauelementen
JPS58190020A (ja) 1982-04-30 1983-11-05 Seiko Epson Corp エピタキシヤル成長法
JPS5983993A (ja) * 1982-11-02 1984-05-15 Nec Corp 単結晶半導体層の成長方法
JPS60202952A (ja) * 1984-03-28 1985-10-14 Fujitsu Ltd 半導体装置の製造方法
JPH07105338B2 (ja) 1985-08-07 1995-11-13 日本電気株式会社 半導体装置の製造方法
JPS63142807A (ja) 1986-12-05 1988-06-15 Nec Corp 半導体装置の製造方法
US5225355A (en) 1988-02-26 1993-07-06 Fujitsu Limited Gettering treatment process
US5010037A (en) 1988-10-14 1991-04-23 California Institute Of Technology Pinhole-free growth of epitaxial CoSi2 film on Si(111)
JP2765968B2 (ja) 1989-07-27 1998-06-18 三洋電機株式会社 結晶性シリコン膜の製造方法
US5075259A (en) 1989-08-22 1991-12-24 Motorola, Inc. Method for forming semiconductor contacts by electroless plating
JPH0395922A (ja) * 1989-09-07 1991-04-22 Canon Inc 半導体薄膜の形成方法
JPH03138925A (ja) 1989-10-24 1991-06-13 Kyocera Corp 半導体膜の結晶化法
JPH03138625A (ja) * 1989-10-25 1991-06-13 Fujitsu Ltd 半導体光学装置及びその製造方法
JPH03200319A (ja) 1989-12-27 1991-09-02 Nec Corp 多結晶シリコンの形成方法
JPH03257818A (ja) * 1990-03-07 1991-11-18 Seiko Epson Corp 半導体装置の製造方法
US5177826A (en) * 1990-03-16 1993-01-12 Hagemann International Rotary toothbrush
JPH0760807B2 (ja) 1990-03-29 1995-06-28 株式会社ジーティシー 半導体薄膜の製造方法
JP2650003B2 (ja) 1991-02-14 1997-09-03 信越化学工業株式会社 化学的気相成長法によるシリコン単結晶の製造方法およびその原料クロロシラン類中の超微量元素と製造されたシリコン単結晶中の超微量元素の分別定量方法
JPH05182923A (ja) * 1991-05-28 1993-07-23 Semiconductor Energy Lab Co Ltd レーザーアニール方法
GB9114018D0 (en) 1991-06-28 1991-08-14 Philips Electronic Associated Thin-film transistor manufacture
JPH05109737A (ja) 1991-10-18 1993-04-30 Casio Comput Co Ltd 薄膜トランジスタの製造方法
US5244819A (en) 1991-10-22 1993-09-14 Honeywell Inc. Method to getter contamination in semiconductor devices
JP3204735B2 (ja) * 1992-06-01 2001-09-04 株式会社東芝 水素化アモルファスシリコン薄膜トランジスタの製造方法
US5288662A (en) 1992-06-15 1994-02-22 Air Products And Chemicals, Inc. Low ozone depleting organic chlorides for use during silicon oxidation and furnace tube cleaning
US5300187A (en) 1992-09-03 1994-04-05 Motorola, Inc. Method of removing contaminants
US5843225A (en) 1993-02-03 1998-12-01 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor and process for fabricating semiconductor device
US5275851A (en) 1993-03-03 1994-01-04 The Penn State Research Foundation Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates
JP2847031B2 (ja) 1993-05-03 1999-01-13 現代電子産業株式会社 半導体素子の配線製造方法
US5426061A (en) 1994-09-06 1995-06-20 Midwest Research Institute Impurity gettering in semiconductors

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57194518A (en) * 1981-05-27 1982-11-30 Toshiba Corp Manufacture of polycrystalline silicon
JPH02140915A (ja) * 1988-11-22 1990-05-30 Seiko Epson Corp 半導体装置の製造方法
JPH03257828A (ja) * 1990-03-07 1991-11-18 Toshiba Corp 半導体装置の製造方法
EP0459763A1 (en) * 1990-05-29 1991-12-04 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistors
JPH0462976A (ja) * 1990-06-30 1992-02-27 Nippon Seiki Co Ltd 加速度センサの製造方法
WO1992001089A1 (en) * 1990-07-03 1992-01-23 Gec-Marconi Limited Crystallisation process
US5147826A (en) * 1990-08-06 1992-09-15 The Pennsylvania Research Corporation Low temperature crystallization and pattering of amorphous silicon films
EP0502749A2 (en) * 1991-03-06 1992-09-09 Semiconductor Energy Laboratory Co., Ltd. Gate structure of field effect device and method for forming the same

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
GANG LIU ET AL: "SELECTIVE AREA CRYSTALLIZATION OF AMORPHOUS SILICON FILMS BY LOW-TEMPERATURE RAPID THERMAL ANNEALING", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, vol. 55, no. 7, 14 August 1989 (1989-08-14), pages 660 - 662, XP000080893, ISSN: 0003-6951 *
ROBERTSON A E ET AL: "METAL INDUCED CRYSTALLIZATION OF AMORPHOUS SILICON", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART A, AVS /AIP, MELVILLE, NY.; US, vol. 5, no. A, 1 July 1987 (1987-07-01), pages 1447 - 1450, XP000002870, ISSN: 0734-2101 *
S.S.LAU ET AL.: "SOLID PHAASE EPITAXY IN SILICIDE-FORMING SYSTEMS", THIN SOLID FILMS., vol. 47, no. 3, December 1977 (1977-12-01), LAUSANNE CH, pages 313 - 321, XP000881535 *

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