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DE69801987D1 - Suszeptor ausführungen für siliziumkarbid-dünnschichten - Google Patents

Suszeptor ausführungen für siliziumkarbid-dünnschichten

Info

Publication number
DE69801987D1
DE69801987D1 DE69801987T DE69801987T DE69801987D1 DE 69801987 D1 DE69801987 D1 DE 69801987D1 DE 69801987 T DE69801987 T DE 69801987T DE 69801987 T DE69801987 T DE 69801987T DE 69801987 D1 DE69801987 D1 DE 69801987D1
Authority
DE
Germany
Prior art keywords
substrate
susceptor
suszeptor
versions
silicon carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69801987T
Other languages
English (en)
Other versions
DE69801987T2 (de
Inventor
Hua-Shuang Kong
Carter, Jr
Joseph Sumakeris
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of DE69801987D1 publication Critical patent/DE69801987D1/de
Application granted granted Critical
Publication of DE69801987T2 publication Critical patent/DE69801987T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Products (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69801987T 1997-03-24 1998-03-19 Suszeptor ausführungen für siliziumkarbid-dünnschichten Expired - Lifetime DE69801987T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/823,365 US6217662B1 (en) 1997-03-24 1997-03-24 Susceptor designs for silicon carbide thin films
PCT/US1998/005484 WO1998042897A1 (en) 1997-03-24 1998-03-19 Susceptor designs for silicon carbide thin films

Publications (2)

Publication Number Publication Date
DE69801987D1 true DE69801987D1 (de) 2001-11-15
DE69801987T2 DE69801987T2 (de) 2002-05-02

Family

ID=25238547

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69801987T Expired - Lifetime DE69801987T2 (de) 1997-03-24 1998-03-19 Suszeptor ausführungen für siliziumkarbid-dünnschichten

Country Status (11)

Country Link
US (3) US6217662B1 (de)
EP (1) EP0970267B1 (de)
JP (1) JP2001518238A (de)
KR (1) KR100504634B1 (de)
CN (1) CN1220800C (de)
AT (1) ATE206774T1 (de)
AU (1) AU6572698A (de)
CA (1) CA2284771A1 (de)
DE (1) DE69801987T2 (de)
ES (1) ES2163263T3 (de)
WO (1) WO1998042897A1 (de)

Families Citing this family (299)

* Cited by examiner, † Cited by third party
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US6217662B1 (en) 2001-04-17
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