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ES2184354T3 - Crecimiento de capas epitaxiales muy uniformes de carburo de silicio. - Google Patents

Crecimiento de capas epitaxiales muy uniformes de carburo de silicio.

Info

Publication number
ES2184354T3
ES2184354T3 ES98965390T ES98965390T ES2184354T3 ES 2184354 T3 ES2184354 T3 ES 2184354T3 ES 98965390 T ES98965390 T ES 98965390T ES 98965390 T ES98965390 T ES 98965390T ES 2184354 T3 ES2184354 T3 ES 2184354T3
Authority
ES
Spain
Prior art keywords
silicon carbide
reactor
epitaxial layers
hydrogen
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES98965390T
Other languages
English (en)
Inventor
Olle Claes Erik Kordina
Kenneth George Irvine
Michael James Paisley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ES2184354T3 publication Critical patent/ES2184354T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Ceramic Products (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

Método de deposición química en fase de vapor que aumenta la uniformidad del espesor de las capas epitaxiales de carburo de silicio, comprendiendo el método: calentar un reactor a una temperatura de al menos 1500ºC, suficientemente alta para el crecimiento epitaxial de carburo de silicio, pero inferior a la temperatura a la que un gas portador de hidrógeno tendería a mordentar el carburo de silicio; y dirigir el flujo de los gases fuente, incluyendo silano, y los gases portadores, a través del reactor calentado, para formar una capa epitaxial de carburo de silicio en el substrato, estando el flujo de gas dirigido a través del reactor en una dirección paralela a la superficie de crecimiento epitaxial; caracterizado porque los gases portadores comprenden una mezcla de un primer gas portador, que comprende hidrógeno en una cantidad de al menos 75% por caudal volumétrico, y un segundo gas portador que comprende argón, teniendo el segundo gas portador una conductividad térmica que es inferior a la conductividad térmica del hidrógeno, y que está presente en una cantidad suficiente para asegurar que los gases fuente se empobrecen menos según pasan a través del reactor, de lo que lo harían si se utilizara el hidrógeno como único gas portador.
ES98965390T 1997-12-17 1998-12-14 Crecimiento de capas epitaxiales muy uniformes de carburo de silicio. Expired - Lifetime ES2184354T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/992,157 US6063186A (en) 1997-12-17 1997-12-17 Growth of very uniform silicon carbide epitaxial layers

Publications (1)

Publication Number Publication Date
ES2184354T3 true ES2184354T3 (es) 2003-04-01

Family

ID=25537981

Family Applications (1)

Application Number Title Priority Date Filing Date
ES98965390T Expired - Lifetime ES2184354T3 (es) 1997-12-17 1998-12-14 Crecimiento de capas epitaxiales muy uniformes de carburo de silicio.

Country Status (11)

Country Link
US (2) US6063186A (es)
EP (1) EP1042544B1 (es)
JP (1) JP4195192B2 (es)
KR (3) KR20010024730A (es)
CN (2) CN1313653C (es)
AT (1) ATE226266T1 (es)
AU (1) AU2086699A (es)
CA (1) CA2312790C (es)
DE (1) DE69808803T2 (es)
ES (1) ES2184354T3 (es)
WO (1) WO1999031306A1 (es)

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US7112860B2 (en) 2003-03-03 2006-09-26 Cree, Inc. Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices
US6964917B2 (en) * 2003-04-08 2005-11-15 Cree, Inc. Semi-insulating silicon carbide produced by Neutron transmutation doping
US7147713B2 (en) * 2003-04-30 2006-12-12 Cree, Inc. Phase controlled sublimation
US7247513B2 (en) * 2003-05-08 2007-07-24 Caracal, Inc. Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide
CN101697366B (zh) * 2003-05-09 2012-12-19 克里公司 通过离子注入进行隔离的发光二极管
US7018554B2 (en) * 2003-09-22 2006-03-28 Cree, Inc. Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices
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US7592634B2 (en) * 2004-05-06 2009-09-22 Cree, Inc. LED fabrication via ion implant isolation
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US20080173239A1 (en) * 2007-01-24 2008-07-24 Yuri Makarov Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactor
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CN104593865A (zh) * 2014-12-25 2015-05-06 廖奇泊 碳化硅垒晶层的制造方法
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Also Published As

Publication number Publication date
KR20010024730A (ko) 2001-03-26
US6063186A (en) 2000-05-16
KR20060061405A (ko) 2006-06-07
WO1999031306A1 (en) 1999-06-24
US6297522B1 (en) 2001-10-02
CN1313653C (zh) 2007-05-02
CN1282386A (zh) 2001-01-31
ATE226266T1 (de) 2002-11-15
DE69808803T2 (de) 2003-09-18
CN1958841A (zh) 2007-05-09
KR100718575B1 (ko) 2007-05-15
CA2312790A1 (en) 1999-06-24
DE69808803D1 (de) 2002-11-21
EP1042544A1 (en) 2000-10-11
JP2002508298A (ja) 2002-03-19
KR100853553B1 (ko) 2008-08-21
CA2312790C (en) 2008-08-05
EP1042544B1 (en) 2002-10-16
JP4195192B2 (ja) 2008-12-10
KR20060121996A (ko) 2006-11-29
CN100560792C (zh) 2009-11-18
AU2086699A (en) 1999-07-05

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