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JPS5654033A - Heater for substrate and chemical evaporation using said heater - Google Patents

Heater for substrate and chemical evaporation using said heater

Info

Publication number
JPS5654033A
JPS5654033A JP13054979A JP13054979A JPS5654033A JP S5654033 A JPS5654033 A JP S5654033A JP 13054979 A JP13054979 A JP 13054979A JP 13054979 A JP13054979 A JP 13054979A JP S5654033 A JPS5654033 A JP S5654033A
Authority
JP
Japan
Prior art keywords
heater
susceptor
concave portions
substrate
heated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13054979A
Other languages
Japanese (ja)
Inventor
Itaru Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP13054979A priority Critical patent/JPS5654033A/en
Publication of JPS5654033A publication Critical patent/JPS5654033A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To obtain a chemically evaporated film having no dispersion by a method wherein concave portions with shapes slightly larger than the substrate to be heated are formed at the opposing locations of both main surfaces of a susceptor, and the susceptor is placed on the heater. CONSTITUTION:The concave portions 2A, 2B with the shapes slightly larger than the substrate 1 to be heated are formed at the opposing locations of surfaces A, B both main surfaces of the surface and the reverse. Only a plane portion 4B is directly subject to heat transmission from the heater 3, and the bottom surfaces of the concave portions 2B are heated by the radiant heat of the heater and heat transmission in the susceptor. Thus, the mean temperature difference of the both main surfaces is small, a warp of the susceptor decreases, the susceptor positively contacts with the heater, and the temperatures of the substrates 1 are equalized. Further, the both surfaces can be used in inverted shapes, and the warp can further be corrected. The temperatures of the periphery of the concave portions 2A are kept at temperatures higher than the center 6, and the dispersion of temperature distribution in the substrates 1 is very small. According to this constitution, the characteristics of the chemically evaporated film are uniformalized, and the life of the susceptor is lengthened.
JP13054979A 1979-10-09 1979-10-09 Heater for substrate and chemical evaporation using said heater Pending JPS5654033A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13054979A JPS5654033A (en) 1979-10-09 1979-10-09 Heater for substrate and chemical evaporation using said heater

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13054979A JPS5654033A (en) 1979-10-09 1979-10-09 Heater for substrate and chemical evaporation using said heater

Publications (1)

Publication Number Publication Date
JPS5654033A true JPS5654033A (en) 1981-05-13

Family

ID=15036929

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13054979A Pending JPS5654033A (en) 1979-10-09 1979-10-09 Heater for substrate and chemical evaporation using said heater

Country Status (1)

Country Link
JP (1) JPS5654033A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58182818A (en) * 1982-04-21 1983-10-25 Kokusai Electric Co Ltd Vapor growth device
JPH02186623A (en) * 1989-01-13 1990-07-20 Toshiba Ceramics Co Ltd Susceptor
JPH0623240U (en) * 1992-08-21 1994-03-25 日新電機株式会社 Susceptor for semiconductor manufacturing equipment
US6449428B2 (en) 1998-12-11 2002-09-10 Mattson Technology Corp. Gas driven rotating susceptor for rapid thermal processing (RTP) system
JP2013168410A (en) * 2012-02-14 2013-08-29 Mitsubishi Electric Corp Wafer holder, film formation device, and film formation method
CN108321115A (en) * 2018-01-23 2018-07-24 东莞市中镓半导体科技有限公司 A support boat structure for wafer epitaxial substrate material growth
WO2021081027A1 (en) * 2019-10-21 2021-04-29 Momentive Performance Materials Quartz, Inc. Wafer carrier for semiconductor processing

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58182818A (en) * 1982-04-21 1983-10-25 Kokusai Electric Co Ltd Vapor growth device
JPH0136692B2 (en) * 1982-04-21 1989-08-02 Kokusai Denki Kk
JPH02186623A (en) * 1989-01-13 1990-07-20 Toshiba Ceramics Co Ltd Susceptor
JPH0623240U (en) * 1992-08-21 1994-03-25 日新電機株式会社 Susceptor for semiconductor manufacturing equipment
US6449428B2 (en) 1998-12-11 2002-09-10 Mattson Technology Corp. Gas driven rotating susceptor for rapid thermal processing (RTP) system
JP2013168410A (en) * 2012-02-14 2013-08-29 Mitsubishi Electric Corp Wafer holder, film formation device, and film formation method
CN108321115A (en) * 2018-01-23 2018-07-24 东莞市中镓半导体科技有限公司 A support boat structure for wafer epitaxial substrate material growth
CN108321115B (en) * 2018-01-23 2020-09-29 东莞市中镓半导体科技有限公司 A kind of support boat structure for the growth of wafer epitaxial substrate material
WO2021081027A1 (en) * 2019-10-21 2021-04-29 Momentive Performance Materials Quartz, Inc. Wafer carrier for semiconductor processing

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