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DE69032773D1 - Verfahren zur Herstellung einer Halbleitervorrichtung - Google Patents

Verfahren zur Herstellung einer Halbleitervorrichtung

Info

Publication number
DE69032773D1
DE69032773D1 DE69032773T DE69032773T DE69032773D1 DE 69032773 D1 DE69032773 D1 DE 69032773D1 DE 69032773 T DE69032773 T DE 69032773T DE 69032773 T DE69032773 T DE 69032773T DE 69032773 D1 DE69032773 D1 DE 69032773D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69032773T
Other languages
English (en)
Other versions
DE69032773T2 (de
Inventor
Hideaki Oka
Satoshi Takenaka
Masafumi Kunii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3414089A external-priority patent/JPH02213123A/ja
Priority claimed from JP1074229A external-priority patent/JP2773203B2/ja
Priority claimed from JP7423089A external-priority patent/JPH02252246A/ja
Priority claimed from JP14247089A external-priority patent/JPH036865A/ja
Priority claimed from JP25939389A external-priority patent/JPH03120872A/ja
Priority claimed from JP30286289A external-priority patent/JPH03161977A/ja
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of DE69032773D1 publication Critical patent/DE69032773D1/de
Application granted granted Critical
Publication of DE69032773T2 publication Critical patent/DE69032773T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02516—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
DE69032773T 1989-02-14 1990-02-12 Verfahren zur Herstellung einer Halbleitervorrichtung Expired - Lifetime DE69032773T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP3414089A JPH02213123A (ja) 1989-02-14 1989-02-14 半導体装置の製造方法
JP1074229A JP2773203B2 (ja) 1989-03-27 1989-03-27 半導体装置の製造方法
JP7423089A JPH02252246A (ja) 1989-03-27 1989-03-27 半導体装置の製造方法
JP14247089A JPH036865A (ja) 1989-06-05 1989-06-05 薄膜半導体装置及びその製造方法
JP25939389A JPH03120872A (ja) 1989-10-04 1989-10-04 半導体装置及びその製造方法
JP30286289A JPH03161977A (ja) 1989-11-21 1989-11-21 薄膜半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE69032773D1 true DE69032773D1 (de) 1998-12-24
DE69032773T2 DE69032773T2 (de) 1999-05-27

Family

ID=27549717

Family Applications (4)

Application Number Title Priority Date Filing Date
DE69030822T Expired - Fee Related DE69030822T2 (de) 1989-02-14 1990-02-12 Halbleitervorrichtung und Verfahren zu ihrer Herstellung
DE69032773T Expired - Lifetime DE69032773T2 (de) 1989-02-14 1990-02-12 Verfahren zur Herstellung einer Halbleitervorrichtung
DE69033736T Expired - Fee Related DE69033736T2 (de) 1989-02-14 1990-02-12 Verfahren zum Herstellen einer Halbleitervorrichtung
DE69030775T Expired - Fee Related DE69030775T2 (de) 1989-02-14 1990-02-12 Herstelllungsverfahren einer Halbleitervorrichtung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69030822T Expired - Fee Related DE69030822T2 (de) 1989-02-14 1990-02-12 Halbleitervorrichtung und Verfahren zu ihrer Herstellung

Family Applications After (2)

Application Number Title Priority Date Filing Date
DE69033736T Expired - Fee Related DE69033736T2 (de) 1989-02-14 1990-02-12 Verfahren zum Herstellen einer Halbleitervorrichtung
DE69030775T Expired - Fee Related DE69030775T2 (de) 1989-02-14 1990-02-12 Herstelllungsverfahren einer Halbleitervorrichtung

Country Status (5)

Country Link
US (3) US6235563B1 (de)
EP (4) EP0383230B1 (de)
DE (4) DE69030822T2 (de)
HK (1) HK1014293A1 (de)
SG (1) SG108807A1 (de)

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US20020132452A1 (en) 2002-09-19
DE69033736T2 (de) 2001-10-25
EP0383230B1 (de) 1997-05-28
DE69030775T2 (de) 1997-11-13
EP0598409A1 (de) 1994-05-25
EP0598410A1 (de) 1994-05-25
EP0383230A3 (de) 1990-12-19
DE69030822D1 (de) 1997-07-03
DE69030775D1 (de) 1997-07-03
US6235563B1 (en) 2001-05-22
HK1014293A1 (en) 1999-09-24
EP0383230A2 (de) 1990-08-22
EP0598410B1 (de) 2001-05-23
EP0608503A3 (de) 1995-05-24
DE69030822T2 (de) 1997-11-27
EP0608503A2 (de) 1994-08-03
EP0608503B1 (de) 1997-05-28
SG108807A1 (en) 2005-02-28
EP0598409B1 (de) 1998-11-18
DE69032773T2 (de) 1999-05-27
US6403497B1 (en) 2002-06-11

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