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DE69016955D1 - Verfahren zur Herstellung einer Halbleiteranordnung. - Google Patents

Verfahren zur Herstellung einer Halbleiteranordnung.

Info

Publication number
DE69016955D1
DE69016955D1 DE69016955T DE69016955T DE69016955D1 DE 69016955 D1 DE69016955 D1 DE 69016955D1 DE 69016955 T DE69016955 T DE 69016955T DE 69016955 T DE69016955 T DE 69016955T DE 69016955 D1 DE69016955 D1 DE 69016955D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69016955T
Other languages
English (en)
Other versions
DE69016955T2 (de
Inventor
Kazuyoshi Shinada
Masayuki Yoshida
Takahide Mizutani
Naoki Hanada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69016955D1 publication Critical patent/DE69016955D1/de
Publication of DE69016955T2 publication Critical patent/DE69016955T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H10B41/46—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with an inter-gate dielectric layer also being used as part of the peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/138—Roughened surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69016955T 1989-12-06 1990-12-03 Verfahren zur Herstellung einer Halbleiteranordnung. Expired - Fee Related DE69016955T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1315156A JP2509717B2 (ja) 1989-12-06 1989-12-06 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE69016955D1 true DE69016955D1 (de) 1995-03-23
DE69016955T2 DE69016955T2 (de) 1995-07-20

Family

ID=18062094

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69016955T Expired - Fee Related DE69016955T2 (de) 1989-12-06 1990-12-03 Verfahren zur Herstellung einer Halbleiteranordnung.

Country Status (5)

Country Link
US (1) US5094967A (de)
EP (1) EP0431522B1 (de)
JP (1) JP2509717B2 (de)
KR (1) KR940002394B1 (de)
DE (1) DE69016955T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5739569A (en) * 1991-05-15 1998-04-14 Texas Instruments Incorporated Non-volatile memory cell with oxide and nitride tunneling layers
JP3548984B2 (ja) * 1991-11-14 2004-08-04 富士通株式会社 半導体装置の製造方法
JP2924622B2 (ja) * 1993-12-28 1999-07-26 日本電気株式会社 半導体装置の製造方法
US5422292A (en) * 1994-09-30 1995-06-06 United Microelectronics Corp. Process for fabricating split gate flash EEPROM memory
US5631178A (en) * 1995-01-31 1997-05-20 Motorola, Inc. Method for forming a stable semiconductor device having an arsenic doped ROM portion
US6330190B1 (en) 1996-05-30 2001-12-11 Hyundai Electronics America Semiconductor structure for flash memory enabling low operating potentials
US6043123A (en) * 1996-05-30 2000-03-28 Hyundai Electronics America, Inc. Triple well flash memory fabrication process
US5861650A (en) * 1996-08-09 1999-01-19 Mitsubishi Denki Kabushiki Kaisha Semiconductor device comprising an FPGA
US6265266B1 (en) * 1996-09-27 2001-07-24 Xilinx, Inc. Method of forming a two transistor flash EPROM cell
JP3466851B2 (ja) * 1997-01-20 2003-11-17 株式会社東芝 半導体装置及びその製造方法
US6190966B1 (en) * 1997-03-25 2001-02-20 Vantis Corporation Process for fabricating semiconductor memory device with high data retention including silicon nitride etch stop layer formed at high temperature with low hydrogen ion concentration
KR100400764B1 (ko) * 1997-12-29 2003-12-24 주식회사 하이닉스반도체 반도체소자의 듀얼 게이트 형성방법
US6015730A (en) * 1998-03-05 2000-01-18 Taiwan Semiconductor Manufacturing Company Integration of SAC and salicide processes by combining hard mask and poly definition
TW390028B (en) * 1998-06-08 2000-05-11 United Microelectronics Corp A flash memory structure and its manufacturing
KR20000003475A (ko) * 1998-06-29 2000-01-15 김영환 메모리소자 제조방법
KR100318320B1 (ko) * 1999-05-10 2001-12-22 김영환 반도체장치의 제조방법
US7573095B2 (en) * 2006-12-05 2009-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cells with improved program/erase windows
US7652923B2 (en) * 2007-02-02 2010-01-26 Macronix International Co., Ltd. Semiconductor device and memory and method of operating thereof
KR100835430B1 (ko) * 2007-05-21 2008-06-04 주식회사 동부하이텍 반도체 소자의 듀얼 게이트 전극 형성 방법
CN108807397A (zh) * 2018-05-31 2018-11-13 武汉新芯集成电路制造有限公司 一种改善栅极孔洞缺陷的方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4131497A (en) * 1977-07-12 1978-12-26 International Business Machines Corporation Method of manufacturing self-aligned semiconductor devices
JPS5519851A (en) * 1978-07-31 1980-02-12 Hitachi Ltd Manufacture of non-volatile memories
JPS56116670A (en) * 1980-02-20 1981-09-12 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
JPS5963763A (ja) * 1982-10-05 1984-04-11 Fujitsu Ltd 半導体装置の製造方法
JPS60189971A (ja) * 1984-03-09 1985-09-27 Toshiba Corp 半導体装置の製造方法
US4584027A (en) * 1984-11-07 1986-04-22 Ncr Corporation Twin well single mask CMOS process
FR2583920B1 (fr) * 1985-06-21 1987-07-31 Commissariat Energie Atomique Procede de fabrication d'un circuit integre et notamment d'une memoire eprom comportant deux composants distincts isoles electriquement
JPS62176158A (ja) * 1986-01-29 1987-08-01 Ricoh Co Ltd ２層ポリシリコン構造の素子を含む半導体集積回路装置の製造方法
FR2642900B1 (fr) * 1989-01-17 1991-05-10 Sgs Thomson Microelectronics Procede de fabrication de circuits integres a transistors de memoire eprom et a transistors logiques

Also Published As

Publication number Publication date
EP0431522B1 (de) 1995-02-15
KR940002394B1 (ko) 1994-03-24
KR910013483A (ko) 1991-08-08
EP0431522A3 (en) 1991-11-06
EP0431522A2 (de) 1991-06-12
DE69016955T2 (de) 1995-07-20
US5094967A (en) 1992-03-10
JPH03177064A (ja) 1991-08-01
JP2509717B2 (ja) 1996-06-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee