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DE68924628D1 - Herstellungsverfahren für einen Halbleiterlaser mit hoher Ausgangsleistung, breiter Bandpasscharakteristik und einer vergrabenen, streifenförmigen BRS-Struktur. - Google Patents

Herstellungsverfahren für einen Halbleiterlaser mit hoher Ausgangsleistung, breiter Bandpasscharakteristik und einer vergrabenen, streifenförmigen BRS-Struktur.

Info

Publication number
DE68924628D1
DE68924628D1 DE68924628T DE68924628T DE68924628D1 DE 68924628 D1 DE68924628 D1 DE 68924628D1 DE 68924628 T DE68924628 T DE 68924628T DE 68924628 T DE68924628 T DE 68924628T DE 68924628 D1 DE68924628 D1 DE 68924628D1
Authority
DE
Germany
Prior art keywords
buried
strip
shaped
manufacturing process
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68924628T
Other languages
English (en)
Other versions
DE68924628T2 (de
Inventor
Pascal Devoldere
Alkis Paraskevopoulos
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oclaro North America Inc
Original Assignee
Etat Francais
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Etat Francais filed Critical Etat Francais
Application granted granted Critical
Publication of DE68924628D1 publication Critical patent/DE68924628D1/de
Publication of DE68924628T2 publication Critical patent/DE68924628T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE68924628T 1988-09-08 1989-09-06 Herstellungsverfahren für einen Halbleiterlaser mit hoher Ausgangsleistung, breiter Bandpasscharakteristik und einer vergrabenen, streifenförmigen BRS-Struktur. Expired - Lifetime DE68924628T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8811744A FR2636176B1 (fr) 1988-09-08 1988-09-08 Procede de realisation d'un laser a semi-conducteur a forte puissance d'emission et a grande bande passante a partir d'une structure a ruban enterre du type brs, et laser ainsi obtenu

Publications (2)

Publication Number Publication Date
DE68924628D1 true DE68924628D1 (de) 1995-11-30
DE68924628T2 DE68924628T2 (de) 1996-05-15

Family

ID=9369824

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68924628T Expired - Lifetime DE68924628T2 (de) 1988-09-08 1989-09-06 Herstellungsverfahren für einen Halbleiterlaser mit hoher Ausgangsleistung, breiter Bandpasscharakteristik und einer vergrabenen, streifenförmigen BRS-Struktur.

Country Status (5)

Country Link
US (1) US5043291A (de)
EP (1) EP0358569B1 (de)
JP (1) JPH02121382A (de)
DE (1) DE68924628T2 (de)
FR (1) FR2636176B1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5547834A (en) * 1988-01-29 1996-08-20 Chiron Corporation Recombinant CMV neutralizing proteins
IT1236904B (it) * 1989-12-21 1993-04-26 Telettra Lab Telefon Processo di fabbricazione di strutture laser con confinamento laterale a bassissima corrente di soglia e relativi dispositivi laser cosi' ottenuti.
JPH06232099A (ja) 1992-09-10 1994-08-19 Mitsubishi Electric Corp 半導体装置の製造方法，半導体装置の製造装置，半導体レーザの製造方法，量子細線構造の製造方法，及び結晶成長方法
GB2299894B (en) * 1992-09-10 1997-01-22 Mitsubishi Electric Corp Method for producing a semiconductor laser device
JP2869279B2 (ja) * 1992-09-16 1999-03-10 三菱電機株式会社 半導体レーザダイオード及びその製造方法並びに半導体レーザダイオードアレイ
KR100226434B1 (ko) * 1996-12-07 1999-10-15 이계철 고출력 반도체 레이저 구조 및 그 제조방법
KR100243417B1 (ko) 1997-09-29 2000-02-01 이계철 알더블유지 구조의 고출력 반도체 레이저
DE10208463B4 (de) * 2002-02-27 2012-04-05 Osram Opto Semiconductors Gmbh Halbleiterlaservorrichtung und Verfahren zu deren Herstellung

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4523961A (en) * 1982-11-12 1985-06-18 At&T Bell Laboratories Method of improving current confinement in semiconductor lasers by inert ion bombardment
US4888624A (en) * 1984-06-15 1989-12-19 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices employing high resistivity in-based compound group III-IV epitaxial layer for current confinement
US4660208A (en) * 1984-06-15 1987-04-21 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices employing Fe-doped MOCVD InP-based layer for current confinement
EP0273730B1 (de) * 1986-12-26 1992-12-23 Matsushita Electric Industrial Co., Ltd. Verfahren zur Herstellung einer Halbleitervorrichtung

Also Published As

Publication number Publication date
EP0358569A1 (de) 1990-03-14
FR2636176A1 (fr) 1990-03-09
DE68924628T2 (de) 1996-05-15
FR2636176B1 (fr) 1990-12-07
EP0358569B1 (de) 1995-10-25
JPH02121382A (ja) 1990-05-09
US5043291A (en) 1991-08-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: DERZEIT KEIN VERTRETER BESTELLT

8328 Change in the person/name/address of the agent

Representative=s name: DR. WEBER, DIPL.-PHYS. SEIFFERT, DR. LIEKE, 65183

8327 Change in the person/name/address of the patent owner

Owner name: AVANEX CORP.(N.D.GES.D.STAATES DELAWARE), FREMONT,