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DE3650362D1 - Photoelektrische Umwandlungsvorrichtung mit hoher Ansprechgeschwindigkeit und Herstellungsverfahren. - Google Patents

Photoelektrische Umwandlungsvorrichtung mit hoher Ansprechgeschwindigkeit und Herstellungsverfahren.

Info

Publication number
DE3650362D1
DE3650362D1 DE3650362T DE3650362T DE3650362D1 DE 3650362 D1 DE3650362 D1 DE 3650362D1 DE 3650362 T DE3650362 T DE 3650362T DE 3650362 T DE3650362 T DE 3650362T DE 3650362 D1 DE3650362 D1 DE 3650362D1
Authority
DE
Germany
Prior art keywords
manufacturing
photoelectric conversion
conversion device
response photoelectric
response
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3650362T
Other languages
English (en)
Other versions
DE3650362T2 (de
Inventor
Shunpei Yamazaki
Akira Mase
Toshiji Hamatani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61001008A external-priority patent/JPS62158371A/ja
Priority claimed from JP61001009A external-priority patent/JPS62158362A/ja
Priority claimed from JP61073746A external-priority patent/JP2639645B2/ja
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Application granted granted Critical
Publication of DE3650362D1 publication Critical patent/DE3650362D1/de
Publication of DE3650362T2 publication Critical patent/DE3650362T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H10F30/2235—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier the devices comprising Group IV amorphous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
DE3650362T 1986-01-06 1986-12-30 Photoelektrische Umwandlungsvorrichtung mit hoher Ansprechgeschwindigkeit und Herstellungsverfahren. Expired - Fee Related DE3650362T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61001008A JPS62158371A (ja) 1986-01-06 1986-01-06 光電変換装置
JP61001009A JPS62158362A (ja) 1986-01-06 1986-01-06 光電変換装置の作成方法
JP61073746A JP2639645B2 (ja) 1986-03-31 1986-03-31 光電変換装置の作成方法

Publications (2)

Publication Number Publication Date
DE3650362D1 true DE3650362D1 (de) 1995-09-14
DE3650362T2 DE3650362T2 (de) 1996-01-25

Family

ID=27274719

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3650362T Expired - Fee Related DE3650362T2 (de) 1986-01-06 1986-12-30 Photoelektrische Umwandlungsvorrichtung mit hoher Ansprechgeschwindigkeit und Herstellungsverfahren.

Country Status (5)

Country Link
US (3) US4999693A (de)
EP (1) EP0228712B1 (de)
KR (1) KR910001194B1 (de)
CN (1) CN1008784B (de)
DE (1) DE3650362T2 (de)

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US5266828A (en) * 1988-10-14 1993-11-30 Matsushita Electric Industrial Co., Ltd. Image sensors with an optical fiber array
DE68926448T2 (de) * 1988-10-14 1996-12-12 Matsushita Electric Ind Co Ltd Bildsensor und verfahren zu dessen herstellung
JP2508851B2 (ja) * 1989-08-23 1996-06-19 日本電気株式会社 液晶表示素子用アクティブマトリクス基板とその製造方法
JPH03156980A (ja) * 1989-11-14 1991-07-04 Sumitomo Electric Ind Ltd 受光素子
JP3210657B2 (ja) * 1989-11-27 2001-09-17 株式会社日立製作所 ヘテロ接合バイポーラトランジスタ
US5187121A (en) * 1991-12-18 1993-02-16 International Business Machines Corporation Process for fabrication of a semiconductor structure and contact stud
US5449924A (en) * 1993-01-28 1995-09-12 Goldstar Electron Co., Ltd. Photodiode having a Schottky barrier formed on the lower metallic electrode
FR2701602B1 (fr) * 1993-02-12 1995-03-31 Thomson Csf Détecteur thermique comprenant un isolant thermique en polymère expansé.
US5470761A (en) * 1993-09-13 1995-11-28 Westinghouse Electric Corporation Process for fabricating a front surface resonant mesh array detector
US5626773A (en) * 1995-01-03 1997-05-06 Texas Instruments Incorporated Structure and method including dry etching techniques for forming an array of thermal sensitive elements
US6287888B1 (en) 1997-12-26 2001-09-11 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and process for producing photoelectric conversion device
JP2005032793A (ja) * 2003-07-08 2005-02-03 Matsushita Electric Ind Co Ltd 有機光電変換素子
JP4905762B2 (ja) 2005-08-23 2012-03-28 富士フイルム株式会社 光電変換素子、撮像素子、および該光電変換素子の製造方法
US8749483B2 (en) * 2007-02-15 2014-06-10 Pixart Imaging Inc. Control device and control method for image display
JP4968414B2 (ja) * 2010-07-05 2012-07-04 Ｄｉｃ株式会社 透明導電層付き基体及びその製造方法、並びにタッチパネル用透明導電膜積層体、タッチパネル

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5137155B2 (de) * 1973-03-12 1976-10-14
US3955082A (en) * 1974-09-19 1976-05-04 Northern Electric Company Limited Photodiode detector with selective frequency response
US4062038A (en) * 1976-01-28 1977-12-06 International Business Machines Corporation Radiation responsive device
US4281208A (en) * 1979-02-09 1981-07-28 Sanyo Electric Co., Ltd. Photovoltaic device and method of manufacturing thereof
US4316049A (en) * 1979-08-28 1982-02-16 Rca Corporation High voltage series connected tandem junction solar battery
JPS56136076A (en) * 1980-03-26 1981-10-23 Hitachi Ltd Photoelectric converter
US4405915A (en) * 1980-03-28 1983-09-20 Canon Kabushiki Kaisha Photoelectric transducing element
JPS56165371A (en) * 1980-05-26 1981-12-18 Shunpei Yamazaki Semiconductor device
US4292092A (en) * 1980-06-02 1981-09-29 Rca Corporation Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery
JPS5715476A (en) * 1980-07-02 1982-01-26 Canon Inc Photosensor
US4567374A (en) * 1980-12-10 1986-01-28 Fuji Xerox Co., Ltd. Photoelectric converting device with a plurality of divided electrodes
JPS57106083A (en) * 1980-12-23 1982-07-01 Toshiba Corp Amorphous silicon diode array
JPS57211787A (en) * 1981-06-24 1982-12-25 Hitachi Ltd Amorphous silicon diode
US4591892A (en) * 1982-08-24 1986-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectric conversion device
JPS5943568A (ja) * 1982-09-02 1984-03-10 Canon Inc フオトセンサアレイ
JPS5980964A (ja) * 1982-11-01 1984-05-10 Toshiba Corp 光電変換素子
US4677742A (en) * 1983-01-18 1987-07-07 Energy Conversion Devices, Inc. Electronic matrix arrays and method for making the same
JPH0614552B2 (ja) * 1983-02-02 1994-02-23 富士ゼロックス株式会社 光電変換素子の製造方法
JPS59147469A (ja) * 1983-02-14 1984-08-23 Hitachi Ltd 非晶質シリコン太陽電池
EP0119742B2 (de) * 1983-02-15 1992-12-16 Sharp Kabushiki Kaisha Zweidimensionale Bildlesevorrichtung
JPS59172274A (ja) * 1983-03-18 1984-09-28 Sanyo Electric Co Ltd 光起電力装置の製造方法
JPS6045057A (ja) * 1983-08-23 1985-03-11 Toshiba Corp 固体撮像装置の製造方法
JPS6047473A (ja) * 1983-08-26 1985-03-14 Hitachi Ltd アモルフアスシリコン光センサ
DE3546717C2 (de) * 1984-06-21 1993-06-03 Kyocera Corp., Kyoto, Jp
JPS617624A (ja) * 1984-06-22 1986-01-14 Fuji Xerox Co Ltd 密着型イメージセンサ
JPH0673372B2 (ja) * 1985-06-24 1994-09-14 三菱電機株式会社 光読み取り装置及びその製造方法
FR2586327B1 (fr) * 1985-08-14 1987-11-20 Thomson Csf Procede de fabrication d'un detecteur d'image lumineuse et detecteur lineaire d'images obtenu par ce procede
EP0229397B1 (de) * 1986-01-06 1995-08-09 Semiconductor Energy Laboratory Co., Ltd. Photoelektrische Umwandlungsvorrichtung und ihr Herstellungsverfahren
AU580903B2 (en) * 1986-01-29 1989-02-02 Semiconductor Energy Laboratory Co. Ltd. Method for manufacturing photoelectric conversion devices
US4678542A (en) * 1986-07-25 1987-07-07 Energy Conversion Devices, Inc. Self-alignment process for thin film diode array fabrication
US4711857A (en) * 1986-08-28 1987-12-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Tailorable infrared sensing device with strain layer superlattice structure

Also Published As

Publication number Publication date
EP0228712A2 (de) 1987-07-15
US5164322A (en) 1992-11-17
CN87100058A (zh) 1987-07-22
CN1008784B (zh) 1990-07-11
KR910001194B1 (ko) 1991-02-25
EP0228712A3 (en) 1989-01-25
KR870007575A (ko) 1987-08-20
US4999693A (en) 1991-03-12
EP0228712B1 (de) 1995-08-09
DE3650362T2 (de) 1996-01-25
US5039620A (en) 1991-08-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee