DE3688633D1 - Photoelektrischer wandler. - Google Patents
Photoelektrischer wandler.Info
- Publication number
- DE3688633D1 DE3688633D1 DE8686303252T DE3688633T DE3688633D1 DE 3688633 D1 DE3688633 D1 DE 3688633D1 DE 8686303252 T DE8686303252 T DE 8686303252T DE 3688633 T DE3688633 T DE 3688633T DE 3688633 D1 DE3688633 D1 DE 3688633D1
- Authority
- DE
- Germany
- Prior art keywords
- photoelectric converter
- photoelectric
- converter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
- H10F30/245—Bipolar phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
- H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60092291A JPH0719882B2 (ja) | 1985-05-01 | 1985-05-01 | 光電変換装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3688633D1 true DE3688633D1 (de) | 1993-08-05 |
DE3688633T2 DE3688633T2 (de) | 1993-11-18 |
Family
ID=14050308
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE86303252T Expired - Lifetime DE3688633T2 (de) | 1985-05-01 | 1986-04-29 | Photoelektrischer Wandler. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4743955A (de) |
EP (1) | EP0200532B1 (de) |
JP (1) | JPH0719882B2 (de) |
DE (1) | DE3688633T2 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3706278A1 (de) * | 1986-02-28 | 1987-09-03 | Canon Kk | Halbleitervorrichtung und herstellungsverfahren hierfuer |
JPH07120767B2 (ja) * | 1986-09-19 | 1995-12-20 | キヤノン株式会社 | 光電変換装置 |
DE3856165T2 (de) * | 1987-01-29 | 1998-08-27 | Canon Kk | Photovoltaischer Wandler |
US4866291A (en) * | 1987-06-30 | 1989-09-12 | Canon Kabushiki Kaisha | Photosensor with charge storage unit and switch unit formed on a single-crystal semiconductor film |
JP2680002B2 (ja) * | 1987-11-14 | 1997-11-19 | キヤノン株式会社 | 光電変換装置 |
EP0390606A3 (de) * | 1989-03-31 | 1991-10-09 | Canon Kabushiki Kaisha | Halbleitervorrichtung mit einem hinsichtlich des Emittorgebietes und/oder der Basiselektrode verbesserten Transistor |
JPH03181282A (ja) * | 1989-12-11 | 1991-08-07 | Fuji Photo Film Co Ltd | 固体撮像デバイス |
US5101252A (en) * | 1989-12-14 | 1992-03-31 | Canon Kabushiki Kaisha | Photoelectric converting device with improved resetting transistor and information processing apparatus utilizing the same |
JP2708596B2 (ja) * | 1990-01-31 | 1998-02-04 | キヤノン株式会社 | 記録ヘッドおよびインクジェット記録装置 |
DE69109884T2 (de) * | 1990-02-09 | 1995-10-26 | Canon Kk | Tintenstrahlaufzeichnungssystem. |
EP0718889A3 (de) * | 1992-06-25 | 1998-07-29 | Canon Kabushiki Kaisha | Photoelektrische Umwandlungsvorrichtung und Verfahren zu deren Herstellung |
US5838176A (en) * | 1996-07-11 | 1998-11-17 | Foveonics, Inc. | Correlated double sampling circuit |
US6169317B1 (en) | 1998-02-13 | 2001-01-02 | Canon Kabushiki Kaisha | Photoelectric conversion device and image sensor |
US6940551B2 (en) | 2000-09-25 | 2005-09-06 | Foveon, Inc. | Active pixel sensor with noise cancellation |
US6685092B2 (en) * | 2001-06-15 | 2004-02-03 | Symbol Technologies, Inc. | Molded imager optical package and miniaturized linear sensor-based code reading engines |
JP5948007B2 (ja) * | 2010-03-29 | 2016-07-06 | セイコーエプソン株式会社 | 分光センサー及び分光フィルター |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3624428A (en) * | 1970-03-20 | 1971-11-30 | Rca Corp | Electric signal processing circuit employing capacitively scanned phototransistor array |
JPS57145368A (en) * | 1981-03-04 | 1982-09-08 | Hitachi Ltd | Semiconductor intergrated circuit |
JPS59152662A (ja) * | 1983-02-20 | 1984-08-31 | Rohm Co Ltd | フオトセンサ−用ic |
US4686554A (en) * | 1983-07-02 | 1987-08-11 | Canon Kabushiki Kaisha | Photoelectric converter |
JPS60163474A (ja) * | 1984-02-03 | 1985-08-26 | Kyoto Semiconductor Kk | ダイオ−ドアレ− |
JPS60206061A (ja) * | 1984-03-29 | 1985-10-17 | Toshiba Corp | イメ−ジセンサ |
JPH0714041B2 (ja) * | 1985-06-12 | 1995-02-15 | キヤノン株式会社 | 光電変換装置 |
-
1985
- 1985-05-01 JP JP60092291A patent/JPH0719882B2/ja not_active Expired - Lifetime
-
1986
- 1986-04-25 US US06/855,682 patent/US4743955A/en not_active Expired - Lifetime
- 1986-04-29 DE DE86303252T patent/DE3688633T2/de not_active Expired - Lifetime
- 1986-04-29 EP EP86303252A patent/EP0200532B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0200532A3 (en) | 1987-09-16 |
EP0200532B1 (de) | 1993-06-30 |
US4743955A (en) | 1988-05-10 |
JPS61252661A (ja) | 1986-11-10 |
DE3688633T2 (de) | 1993-11-18 |
JPH0719882B2 (ja) | 1995-03-06 |
EP0200532A2 (de) | 1986-11-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |