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IT1236904B - Processo di fabbricazione di strutture laser con confinamento laterale a bassissima corrente di soglia e relativi dispositivi laser cosi' ottenuti. - Google Patents

Processo di fabbricazione di strutture laser con confinamento laterale a bassissima corrente di soglia e relativi dispositivi laser cosi' ottenuti.

Info

Publication number
IT1236904B
IT1236904B IT02277089A IT2277089A IT1236904B IT 1236904 B IT1236904 B IT 1236904B IT 02277089 A IT02277089 A IT 02277089A IT 2277089 A IT2277089 A IT 2277089A IT 1236904 B IT1236904 B IT 1236904B
Authority
IT
Italy
Prior art keywords
manufacturing process
low threshold
structure manufacturing
lateral border
laser
Prior art date
Application number
IT02277089A
Other languages
English (en)
Other versions
IT8922770A0 (it
IT8922770A1 (it
Inventor
Fabio Vidimari
Sergio Pellegrino
Original Assignee
Telettra Lab Telefon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telettra Lab Telefon filed Critical Telettra Lab Telefon
Priority to IT02277089A priority Critical patent/IT1236904B/it
Publication of IT8922770A0 publication Critical patent/IT8922770A0/it
Priority to DE69012968T priority patent/DE69012968T2/de
Priority to EP90124596A priority patent/EP0433991B1/en
Priority to US07/631,644 priority patent/US5151914A/en
Publication of IT8922770A1 publication Critical patent/IT8922770A1/it
Application granted granted Critical
Publication of IT1236904B publication Critical patent/IT1236904B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
IT02277089A 1989-12-21 1989-12-21 Processo di fabbricazione di strutture laser con confinamento laterale a bassissima corrente di soglia e relativi dispositivi laser cosi' ottenuti. IT1236904B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT02277089A IT1236904B (it) 1989-12-21 1989-12-21 Processo di fabbricazione di strutture laser con confinamento laterale a bassissima corrente di soglia e relativi dispositivi laser cosi' ottenuti.
DE69012968T DE69012968T2 (de) 1989-12-21 1990-12-18 Herstellungsverfahren von Laserstrukturen mit seitlicher Begrenzung und niederem Schwellstrom.
EP90124596A EP0433991B1 (en) 1989-12-21 1990-12-18 Fabrication process of laser structures with lateral confinement at very low threshold current
US07/631,644 US5151914A (en) 1989-12-21 1990-12-21 Process to manufacture laser structures with lateral confinement at very low threshold current and relevant laser devices so obtained

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT02277089A IT1236904B (it) 1989-12-21 1989-12-21 Processo di fabbricazione di strutture laser con confinamento laterale a bassissima corrente di soglia e relativi dispositivi laser cosi' ottenuti.

Publications (3)

Publication Number Publication Date
IT8922770A0 IT8922770A0 (it) 1989-12-21
IT8922770A1 IT8922770A1 (it) 1991-06-21
IT1236904B true IT1236904B (it) 1993-04-26

Family

ID=11200273

Family Applications (1)

Application Number Title Priority Date Filing Date
IT02277089A IT1236904B (it) 1989-12-21 1989-12-21 Processo di fabbricazione di strutture laser con confinamento laterale a bassissima corrente di soglia e relativi dispositivi laser cosi' ottenuti.

Country Status (4)

Country Link
US (1) US5151914A (it)
EP (1) EP0433991B1 (it)
DE (1) DE69012968T2 (it)
IT (1) IT1236904B (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2695761B1 (fr) * 1992-09-11 1994-12-30 Slimane Loualiche Procédé de fabrication de dispositifs électro-optiques à ruban, notamment de lasers, et dispositifs ainsi obtenus.
US5567646A (en) * 1992-12-28 1996-10-22 Philips Electronics North America Corporation Method of making a stripe-geometry II/VI semiconductor gain-guided injection laser structure using ion implantation
IT1263897B (it) * 1993-02-12 1996-09-05 Alcatel Italia Laser a semiconduttore a bassa corrente di soglia e relativo processo di costruzione
US5328854A (en) * 1993-03-31 1994-07-12 At&T Bell Laboratories Fabrication of electronic devices with an internal window

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4594603A (en) * 1982-04-22 1986-06-10 Board Of Trustees Of The University Of Illinois Semiconductor device with disordered active region
US4523961A (en) * 1982-11-12 1985-06-18 At&T Bell Laboratories Method of improving current confinement in semiconductor lasers by inert ion bombardment
US4706254A (en) * 1983-05-12 1987-11-10 Canon Kabushiki Kaisha Semiconductor device and its fabrication
FR2636176B1 (fr) * 1988-09-08 1990-12-07 France Etat Procede de realisation d'un laser a semi-conducteur a forte puissance d'emission et a grande bande passante a partir d'une structure a ruban enterre du type brs, et laser ainsi obtenu

Also Published As

Publication number Publication date
IT8922770A0 (it) 1989-12-21
EP0433991A3 (en) 1991-12-18
DE69012968D1 (de) 1994-11-03
IT8922770A1 (it) 1991-06-21
DE69012968T2 (de) 1995-02-02
EP0433991B1 (en) 1994-09-28
EP0433991A2 (en) 1991-06-26
US5151914A (en) 1992-09-29

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971128