DE3887823D1 - Halbleiterspeicher. - Google Patents

Halbleiterspeicher.

Info

Publication number: DE3887823D1
Authority: DE; Germany
Prior art keywords: semiconductor memory; semiconductor; memory
Prior art date: 1987-11-06
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE88310421T

Other languages

English (en)

Other versions

DE3887823T2 (de

Inventor

Katsuji Iguchi

Masahiko Urai

Chiyako Masuichi

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sharp Corp

Original Assignee

Sharp Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-11-06

Filing date

1988-11-04

Publication date

1994-03-24

1988-11-04 Application filed by Sharp Corp filed Critical Sharp Corp

1994-03-24 Publication of DE3887823D1 publication Critical patent/DE3887823D1/de

1994-08-11 Application granted granted Critical

1994-08-11 Publication of DE3887823T2 publication Critical patent/DE3887823T2/de

2008-11-05 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
- H10B12/373—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate the capacitor extending under or around the transistor

Landscapes

Engineering & Computer Science (AREA)
Manufacturing & Machinery (AREA)
Semiconductor Memories (AREA)
Semiconductor Integrated Circuits (AREA)

DE3887823T 1987-11-06 1988-11-04 Halbleiterspeicher. Expired - Fee Related DE3887823T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP62281382A JP2517015B2 (ja)	1987-11-06	1987-11-06	半導体メモリの製造方法

Publications (2)

Publication Number	Publication Date
DE3887823D1 true DE3887823D1 (de)	1994-03-24
DE3887823T2 DE3887823T2 (de)	1994-08-11

Family

ID=17638360

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE3887823T Expired - Fee Related DE3887823T2 (de)	1987-11-06	1988-11-04	Halbleiterspeicher.

Country Status (4)

Country	Link
US (1)	US4999689A (de)
EP (1)	EP0315483B1 (de)
JP (1)	JP2517015B2 (de)
DE (1)	DE3887823T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR910000246B1 (ko) *	1988-02-15	1991-01-23	삼성전자 주식회사	반도체 메모리장치
JPH04328861A (ja) *	1991-04-26	1992-11-17	Texas Instr Japan Ltd	半導体集積回路装置及びその製造方法
JP3146316B2 (ja) *	1991-05-17	2001-03-12	日本テキサス・インスツルメンツ株式会社	半導体装置及びその製造方法
US5708559A (en) *	1995-10-27	1998-01-13	International Business Machines Corporation	Precision analog metal-metal capacitor
US6395613B1 (en)	2000-08-30	2002-05-28	Micron Technology, Inc.	Semiconductor processing methods of forming a plurality of capacitors on a substrate, bit line contacts and method of forming bit line contacts
JPH1167626A (ja) *	1997-08-12	1999-03-09	Hitachi Ltd	レジスト除去方法および装置
US6476435B1 (en)	1997-09-30	2002-11-05	Micron Technology, Inc.	Self-aligned recessed container cell capacitor
US6090661A (en) *	1998-03-19	2000-07-18	Lsi Logic Corporation	Formation of novel DRAM cell capacitors by integration of capacitors with isolation trench sidewalls
US6369418B1 (en)	1998-03-19	2002-04-09	Lsi Logic Corporation	Formation of a novel DRAM cell
US6177699B1 (en)	1998-03-19	2001-01-23	Lsi Logic Corporation	DRAM cell having a verticle transistor and a capacitor formed on the sidewalls of a trench isolation
JP3655113B2 (ja) *	1998-12-28	2005-06-02	シャープ株式会社	半導体記憶装置の製造方法
KR20010017088A (ko) *	1999-08-07	2001-03-05	박종섭	아날로그 커패시터의 콘택홀 형성방법
US7208789B2 (en) *	2002-08-02	2007-04-24	Promos Technologies, Inc.	DRAM cell structure with buried surrounding capacitor and process for manufacturing the same
US6875653B2 (en) *	2002-08-02	2005-04-05	Promos Technologies Inc.	DRAM cell structure with buried surrounding capacitor and process for manufacturing the same
JP2007306680A (ja) *	2006-05-10	2007-11-22	Kokusan Denki Co Ltd	内燃機関用フライホイール磁石回転子
CN105226046A (zh) *	2015-10-13	2016-01-06	格科微电子（上海）有限公司	金属层-绝缘层-金属层电容器及其制作方法
CN106469716B (zh) *	2016-11-25	2019-02-05	南通壹选工业设计有限公司	一种垂直型电容器结构
CN106952895B (zh) *	2017-02-22	2019-05-10	新昌县诺趣智能科技有限公司	一种mim电容器结构的制造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS583260A (ja) *	1981-06-29	1983-01-10	Fujitsu Ltd	竪型埋め込みキヤパシタ
JPH0793366B2 (ja) *	1984-10-08	1995-10-09	日本電信電話株式会社	半導体メモリおよびその製造方法
DE3565339D1 (en) *	1984-04-19	1988-11-03	Nippon Telegraph & Telephone	Semiconductor memory device and method of manufacturing the same
JPS60239053A (ja) *	1984-05-14	1985-11-27	Oki Electric Ind Co Ltd	半導体ｒａｍ装置
JPS6157194A (ja) *	1984-08-28	1986-03-24	Mitsubishi Electric Corp	Ｐａｌ／ｓｅｃａｍ信号間欠磁気記録方法
JPS6156445A (ja) *	1984-08-28	1986-03-22	Toshiba Corp	半導体装置
JPH0750745B2 (ja) *	1985-10-03	1995-05-31	株式会社日立製作所	半導体装置
US4704368A (en) *	1985-10-30	1987-11-03	International Business Machines Corporation	Method of making trench-incorporated monolithic semiconductor capacitor and high density dynamic memory cells including the capacitor
JPH0682804B2 (ja) *	1985-12-24	1994-10-19	三菱電機株式会社	半導体記憶装置
JPS62179659A (ja) *	1986-02-01	1987-08-06	Canon Inc	超音波探触子
US4801989A (en) *	1986-02-20	1989-01-31	Fujitsu Limited	Dynamic random access memory having trench capacitor with polysilicon lined lower electrode
EP0236089B1 (de) *	1986-03-03	1992-08-05	Fujitsu Limited	Einen Rillenkondensator enthaltender dynamischer Speicher mit wahlfreiem Zugriff
JPH0797622B2 (ja) *	1986-03-03	1995-10-18	富士通株式会社	半導体メモリ
JPH0685427B2 (ja) *	1986-03-13	1994-10-26	三菱電機株式会社	半導体記憶装置
JPS63229745A (ja) *	1987-03-19	1988-09-26	Fujitsu Ltd	ダイナミツクランダムアクセスメモリ装置
JP2645008B2 (ja) *	1987-03-30	1997-08-25	株式会社東芝	半導体記憶装置

1987
- 1987-11-06 JP JP62281382A patent/JP2517015B2/ja not_active Expired - Fee Related
1988
- 1988-11-04 EP EP88310421A patent/EP0315483B1/de not_active Expired - Lifetime
- 1988-11-04 DE DE3887823T patent/DE3887823T2/de not_active Expired - Fee Related
1990
- 1990-08-13 US US07/566,866 patent/US4999689A/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
DE3887823T2 (de)	1994-08-11
EP0315483B1 (de)	1994-02-16
JPH01123462A (ja)	1989-05-16
EP0315483A3 (en)	1990-10-10
EP0315483A2 (de)	1989-05-10
US4999689A (en)	1991-03-12
JP2517015B2 (ja)	1996-07-24

Publication	Publication Date	Title
DE3751002D1 (de)	1995-03-02	Halbleiterspeicher.
DE3778439D1 (de)	1992-05-27	Halbleiterspeicheranordnung.
DE68911044D1 (de)	1994-01-13	Halbleiterspeicher.
DE69007827D1 (de)	1994-05-11	Halbleiter-Speicher.
DE3851444D1 (de)	1994-10-13	Halbleiterfestwertspeichereinrichtung.
DE3788747D1 (de)	1994-02-24	Halbleiterspeicher.
DE3887224D1 (de)	1994-03-03	Halbleiterspeicheranordnung.
DE3686994D1 (de)	1992-11-26	Halbleiterspeicher.
KR880013252A (ko)	1988-11-30	반도체 기억장치
DE3884022D1 (de)	1993-10-21	Halbleiterspeicheranordnung.
DE3874455D1 (de)	1992-10-15	Nichtfluechtiger halbleiterspeicher.
DE3772137D1 (de)	1991-09-19	Halbleiter-speicheranordnung.
DE3771238D1 (de)	1991-08-14	Halbleiterspeicher.
DE3778408D1 (de)	1992-05-27	Halbleiterspeicheranordnung.
DE68918193D1 (de)	1994-10-20	Halbleiterspeicher.
DE3889872D1 (de)	1994-07-07	Halbleiterspeicheranordnung.
DE3680562D1 (de)	1991-09-05	Halbleiterspeicheranordnung.
DE3675445D1 (de)	1990-12-13	Halbleiterspeicheranordnung.
DE3787616D1 (de)	1993-11-04	Halbleiterspeicheranordnung.
DE3887823D1 (de)	1994-03-24	Halbleiterspeicher.
DE3783666D1 (de)	1993-03-04	Halbleiterspeicheranordnung.
DE3878370D1 (de)	1993-03-25	Nichtfluechtige halbleiterspeicheranordnung.
DE3865702D1 (de)	1991-11-28	Halbleiter-festwertspeichereinrichtung.
DE3783493D1 (de)	1993-02-25	Halbleiterspeicheranordnung.
DE68923899D1 (de)	1995-09-28	Halbleiterspeicher.

Legal Events

Date	Code	Title	Description
1995-03-23	8364	No opposition during term of opposition
1997-03-20	8328	Change in the person/name/address of the agent	Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN
2000-02-10	8339	Ceased/non-payment of the annual fee