CN105778411A - Secondary mixing method of epoxy resin composition for semiconductor encapsulation - Google Patents
Secondary mixing method of epoxy resin composition for semiconductor encapsulation Download PDFInfo
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Abstract
The present invention relates to a secondary mixing method of an epoxy resin composition for semiconductor encapsulation. The method is as follows: putting epoxy resin, a phenolic resin curing agent, an inorganic filler, a mold release agent, a low stress modifier, a colorant, a flame retardant, a silane coupling agent and an inorganic ion capture agent for preparing the epoxy resin composition for semiconductor encapsulation into a high speed mixer, stirring evenly, melting and mixing at temperature of 70 ~ 100 DEG C, after the mixing, tableting, cooling and pulverizing into powder; then stirring evenly the powder was and a curing accelerator in a high speed mixer, performing secondary melting and mixing at the temperature of 70 ~ 100 DEG C, after the mixing, tableting, cooling and pulverizing to obtain the epoxy resin composition for semiconductor encapsulation. The epoxy resin composition for semiconductor encapsulation. The epoxy resin composition for semiconductor encapsulation having the advantages of good flowability, low insoluble content, excellent encapsulation moldability, reduction of proportion of encapsulation leakage and increasing of mould opening hardness can be obtained by the secondary mixing method.
Description
Technical field
The preparation method that the present invention relates to the composition epoxy resin of semiconductor-sealing-purpose, particularly to the secondary compounding process of the composition epoxy resin of the semiconductor-sealing-purpose that can improve composition epoxy resin mobility and encapsulated moulding, and the composition epoxy resin of semiconductor-sealing-purpose.
Background technology
Along with developing rapidly of semicon industry, semiconductor packaging industry have also been obtained and develops rapidly；In recent years, semiconductor device develops to miniaturization, slimming and surface mounting technique direction, and develops to ultra-large direction, it is desirable to semiconductor sealing material has good filling capacity, high mobility, fast setting performance.But traditional once mixing processing mode is not large-scale to be improved, the compounding process of composition epoxy resin relatively lags behind, and a traditional melting mixing pattern is easily caused the poor fluidity of composition epoxy resin, and insoluble matter is many, and die sinking hardness is low.The size and number of insoluble matter directly affects the filling capacity of semiconductor packages, because the impurity in composition epoxy resin is excessive or too much can block encapsulation runner, the leakage in encapsulation process is caused to seal, have a strong impact on the yield rate of encapsulation process, leakage envelope phenomenon that poor fluidity is also easily caused in encapsulation process end, die sinking lower hardness can cause the formation problems such as sticking to mould, break the muscle.
List of references: CN201310272431.9
Summary of the invention
An object of the present invention is in that by using second melting compounding process, with the problem solving the poor fluidity of the obtained composition epoxy resin of current preparation method, insoluble matter is many, die sinking hardness is low, thus providing the secondary compounding process of a kind of composition epoxy resin preparing the semiconductor-sealing-purpose that insolubles content is low, mobility is high, die sinking hardness is high.
The two of the purpose of the present invention are in that to provide the composition epoxy resin of the semiconductor-sealing-purpose of the second melting compounding process that can be used for the present invention.
The secondary compounding process of the epoxy resin composition for semiconductor encapsulation of the present invention is through the following steps that realize:
(1) by the epoxy resin in the composition epoxy resin preparing semiconductor-sealing-purpose, phenolic resin curative, inorganic filler, releasing agent, low stress modified dose, coloring agent, fire retardant, silane coupler and inorganic ion scavenger put in homogenizer, after stirring, it is 70～100 DEG C in temperature and carries out melting mixing, mixing rear tabletting, cool down, be ground into powder；
(2) after the curing accelerator in step (1) powder obtained and the composition epoxy resin preparing semiconductor-sealing-purpose being stirred in homogenizer, being 70～100 DEG C in temperature, to carry out second melting mixing, mixing rear tabletting, cooling, pulverizing, obtain the composition epoxy resin of semiconductor-sealing-purpose.
The described equipment used by melting mixing includes one or more in double roll mill, single extruders, twin screw compounder.When adopting double roll mill to carry out melting mixing, the time of its melting mixing can be 4～8 minutes；When adopting single extruders or twin screw compounder to carry out melting mixing, the time of its melting mixing is to add from raw material in single extruders or twin screw compounder to extrusion.The rotating speed of single extruders or twin screw compounder is usually 100～150 revs/min.
Present invention also offers the composition epoxy resin of the semiconductor-sealing-purpose of the second melting compounding process that can be used for the present invention, the component of the composition epoxy resin of this semiconductor-sealing-purpose and content is:
Described epoxy resin is have the monomer of more than 2 epoxide groups, oligomer or polymer in 1 epoxy molecule, and its molecular weight and molecular structure are not particularly limited.Described epoxy resin can be selected from one or more in o-cresol formaldehyde epoxy resin, bisphenol A type epoxy resin, bisphenol f type epoxy resin, linear phenolic epoxy resin, biphenyl type epoxy resin, dicyclopentadiene type epoxy resin, open chain aliphatic epoxy resin, cycloaliphatic epoxy resin, heterocyclic-type epoxy resin etc..
Described phenolic resin curative is have the monomer of more than 2 hydroxyls, oligomer or polymer in 1 phenolic aldehyde molecule, and its molecular weight and molecular structure are not particularly limited.Described phenolic resin can be selected from one or more in the copolymer of phenol linear phenolic resin and derivant, phenyl methylcarbamate linear phenolic resin and derivant, monohydroxy or dihydroxy naphthlene phenolic resin and derivant, xylol and phenol or the condensation substance of naphthols, dicyclopentadiene and phenol etc..
Described inorganic filler is not particularly limited.Described inorganic filler can be selected from one or more in fine silica powder, alumina powder, titanium oxide fine powder, silicon nitride powder, aluminium nitride micropowder etc..Fine silica powder can be powdered quartz micropowder or fusion fine silica powder；Described fusion fine silica powder can be dihedral micropowder or ball-type micropowder.Wherein, it is preferred to use the fusion fine silica powder of ball-type.Above-mentioned powdered quartz micropowder and fusion fine silica powder can be used alone or mix use.Additionally, the surface of described fine silica powder can use silane coupler to carry out surface treatment (high-speed stirred mixing).
Described curing accelerator, as long as the curing reaction of epoxy radicals and phenolic hydroxyl group can be promoted, is not particularly limited.The general content in the composition of described curing accelerator is 0.16～0.8wt%；One or more in imidazolium compounds, tertiary amine compound and organic phosphine compound etc. can be selected from.
One or more in 2-methylimidazole, 2,4-methylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole and 2-(heptadecyl) imidazoles etc. of described imidazolium compounds.
Described tertiary amine compound selected from triethylamine benzyl group dimethylamine, Alpha-Methyl benzyl group dimethylamine, 2-(dimethylamino methyl) phenol, 2,4,6-tri-(dimethylamino methyl) phenol and 1,8-diazabicyclo (5,4,0) one or more in endecatylene-7 grade.
One or more in triphenylphosphine, trimethyl-phosphine, triethyl phosphine, tributylphosphine, three (p-methylphenyl) phosphines and three (nonyl phenyl) phosphine etc. of described organic phosphine compound.
The general content in the composition of described releasing agent is 0.3～0.5wt%；One or more in Brazil wax, synthetic wax and mineral wax can be selected from.
The general content in the composition of described low stress modified dose is 0.7～0.9wt%；Such as liquid silicone oil, silicone rubber powder or their mixture etc..
The general content in the composition of described coloring agent is 0.4～0.6wt%；Such as white carbon black.
The general content in the composition of described fire retardant is 0.5～10wt%；One or more in Brominated Epoxy, antimony oxide, zinc molybdate, Firebrake ZB, magnesium hydroxide and aluminium hydroxide of described fire retardant.
The scope of the particle diameter d50 of the described zinc molybdate in fire retardant, Firebrake ZB, magnesium hydroxide and aluminium hydroxide etc. is all 0.1～10 μm, it is preferable that particle diameter d50 ranges for 0.2～2.0 μm.
The general content in the composition of described silane coupler is 0.4～0.6wt%；One or more in γ-glycidyl propyl ether trimethoxy silane, γ aminopropyltriethoxy silane, γ mercaptopropyitrimethoxy silane and γ-aminopropyltrimethoxysilane can be selected from.
One or more in the compound of hydrated metal oxide, acid metal salt and magnalium of described inorganic ion scavenger；
Described hydrated metal oxide is Bi2O3·3H2O；Described acid metal salt is Zr (HPO4)2·H2O；The compound of described magnalium is Mg6Al2(CO3)(OH)16·4H2O。
Various raw materials involved in the composition epoxy resin of the semiconductor-sealing-purpose of the present invention all commercially obtain.The secondary compounding process of epoxy resin composition for semiconductor encapsulation provided by the present invention, can obtaining and have good mobility, insolubles content is low, excellent encapsulated moulding, leakage envelope ratio reduces, the composition epoxy resin of the semiconductor-sealing-purpose that die sinking hardness improves.The traditional melting mixing pattern temperature when melting mixing is higher, the insolubles content being easily caused in gained composition epoxy resin is many, and the present invention adopts secondary compounding process, temperature during each melting mixing is all relatively low, make the insolubles content in gained composition epoxy resin low or be substantially free of, uniformity is good, and the performance of compositions is more excellent.Improved composition epoxy resin mobility and the composition epoxy resin of the semiconductor-sealing-purpose of encapsulated moulding that the method for the use present invention prepares carry out semiconductor device and integrated antenna package, the yield rate in encapsulation process can be improved, reduce leakage envelope ratio, promote curing characteristics.
Below in conjunction with embodiment, the present invention is further illustrated, but they are not intended that limitation of the invention, for those skilled in the art, according to some nonessential change and adjustment that the present invention does, is accordingly to be regarded as and is within the scope of the present invention.
Detailed description of the invention
Embodiment 1
Prepare the component in the composition epoxy resin of semiconductor-sealing-purpose and content be:
O-cresol formaldehyde epoxy resin A1 (Japan's DICCorporation system " N-665 ") 15wt%
Phenol linear phenolic resin B1 (Japan's DICCorporation system " TD-2131 ") 7wt%
2-methylimidazole C10.15wt%
1,8-diazabicyclo (5,4,0) endecatylene-7C20.45wt%
Fine silica powder D (d50 is 25 μm) 67wt%
Fire retardant (mixture of Firebrake ZB, magnesium hydroxide and aluminium hydroxide, wherein Firebrake ZB: magnesium hydroxide: the weight ratio of aluminium hydroxide is 8:2:1；The scope of particle diameter d50 is all 0.1～10 μm) E8wt%
Brazil wax F0.4wt%
γ-glycidyl propyl ether trimethoxy silane G0.5wt%
Inorganic ion scavenger H0.2wt% (Japan TOAGOSEICo., Ltd IXE500 (Bi2O3·3H2O))
White carbon black I0.5wt%
Liquid silicone oil J0.3wt%
Silicone rubber powder K0.5wt% (d50 is 1 μm)
(1) according to said ratio, by A1, B1 in the load weighted composition epoxy resin preparing semiconductor-sealing-purpose, D, E, F, G, H, I, J, K put in homogenizer, after stirring, the twin screw compounder (rotating speed is 100～150 revs/min) that temperature is 70～100 DEG C carries out melting mixing, tabletting after mixing extrusion, cools down, be ground into powder；
(2) after powder step (1) obtained and above-mentioned load weighted C1 and C2 stir in homogenizer, the twin screw compounder (rotating speed is 100～150 revs/min) that temperature is 70～100 DEG C carries out second melting mixing, tabletting after mixing extrusion, cool down, be ground into powder, it is pre-formed as biscuit again, obtain the composition epoxy resin moulding material of semiconductor-sealing-purpose, evaluating with following methods, result is in Table 1.
Spiral flow: measuring by helical flow metal die on transfer modling press, briquetting pressure is 70 ± 2Kgf/cm2Mold temperature, at 175 ± 2 DEG C, takes above-mentioned composition epoxy resin 20 ± 5g and tests.
Insolubles content: weigh above-mentioned composition epoxy resin 300 grams and be placed in beaker, add appropriate acetone, it is stirred 30 minutes, liquid after stirring is passed through the sieve of 60 orders, insoluble matter not over sieve is collected, dries and weighed, to not pass through the quality quality divided by the composition epoxy resin weighed of the insoluble matter of sieve, its ratio is insolubles content.
Leakage envelope ratio: after above-mentioned composition epoxy resin, encapsulates SOT-23, and the ratio that will appear from filling abnormal number shared encapsulation quantity is defined as Lou envelope ratio.
Die sinking hardness: measuring by flash mold on transfer modling press, matched moulds 60s, briquetting pressure is 70 ± 2Kgf/cm2, mold temperature, at 175 ± 2 DEG C, uses the hardness of Shao's ASKER D durometer test test epoxy resin composition for semiconductor encapsulation curing molding rear surface in die sinking 11s～15s.
Embodiment 2～10
The composition of the composition epoxy resin of semiconductor-sealing-purpose and content are in Table 1, and preparation method is with embodiment 1, and evaluation methodology is with embodiment 1, and evaluation result is in Table 1.
Comparative example 1～10
The composition of the composition epoxy resin of semiconductor-sealing-purpose is with embodiment 1～10, and preparation method is a traditional melting mixing method, and evaluation methodology is with embodiment 1, and evaluation result is in Table 2.
Embodiment 2～10, comparative example 2～10 semiconductor-sealing-purpose composition epoxy resin in adopt the composition beyond embodiment 1 as follows.
Biphenyl type epoxy resin A2 (JapanEpoxyResinsCo., Ltd. system " YX-4000H ")
Dicyclopentadiene type epoxy Resin A 3 (Japan's DICCorporation system " HP-7200 ")
Phenol alkyl phenolic resin (phenol linear phenolic resin derivant) B2 (MitsuiChemicals, Inc. system " XLC-4L ")
Triphenylphosphine C3
Table 1: the composition of the composition epoxy resin of the semiconductor-sealing-purpose of embodiment 1～10 and content and evaluation result (by weight percentage)
Table 2: the evaluation result of the composition epoxy resin of the semiconductor-sealing-purpose of comparative example 1～10
Be can be seen that by the results of property of above-described embodiment and comparative example, the composition epoxy resin of the semiconductor-sealing-purpose that the secondary compounding process of the use present invention obtains, compared with the epoxy resin composition for semiconductor encapsulation by a traditional compounding process gained, use the composition epoxy resin mobility that the method for the present invention obtains better, insolubles content is lower, molding hourglass envelope ratio reduces, and die sinking hardness improves.
Claims (10)
1. a secondary compounding process for the composition epoxy resin of semiconductor-sealing-purpose, is characterized in that:
(1) by the epoxy resin in the composition epoxy resin preparing semiconductor-sealing-purpose, phenolic resin curative, inorganic filler, releasing agent, low stress modified dose, coloring agent, fire retardant, silane coupler and inorganic ion scavenger put in blender, after stirring, it is 70～100 DEG C in temperature and carries out melting mixing, mixing rear tabletting, cool down, be ground into powder；
(2) after the curing accelerator in step (1) powder obtained and the composition epoxy resin preparing semiconductor-sealing-purpose being stirred in blender, being 70～100 DEG C in temperature, to carry out second melting mixing, mixing rear tabletting, cooling, pulverizing, obtain the composition epoxy resin of semiconductor-sealing-purpose.
2. secondary compounding process according to claim 1, is characterized in that: the component of the composition epoxy resin of described semiconductor-sealing-purpose and content is:
3. secondary compounding process according to claim 1 and 2, is characterized in that: one or more in o-cresol formaldehyde epoxy resin, bisphenol A type epoxy resin, bisphenol f type epoxy resin, linear phenolic epoxy resin, biphenyl type epoxy resin, dicyclopentadiene type epoxy resin, open chain aliphatic epoxy resin, cycloaliphatic epoxy resin, heterocyclic-type epoxy resin of described epoxy resin.
4. secondary compounding process according to claim 1 and 2, is characterized in that: one or more in the copolymer of phenol linear phenolic resin and derivant, phenyl methylcarbamate linear phenolic resin and derivant, monohydroxy or dihydroxy naphthlene phenolic resin and derivant, xylol and phenol or the condensation substance of naphthols, dicyclopentadiene and phenol of described phenolic resin.
5. secondary compounding process according to claim 1 and 2, is characterized in that: one or more in fine silica powder, alumina powder, titanium oxide fine powder, silicon nitride powder, aluminium nitride micropowder of described inorganic filler；
Described fine silica powder is selected from powdered quartz micropowder, fusion fine silica powder or their mixture；
Described fusion fine silica powder is dihedral micropowder or ball-type micropowder.
6. secondary compounding process according to claim 1 and 2, is characterized in that: one or more in imidazolium compounds, tertiary amine compound and organic phosphine compound of described curing accelerator；
One or more in 2-methylimidazole, 2,4-methylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole and 2-(heptadecyl) imidazoles of described imidazolium compounds；
Described tertiary amine compound selected from triethylamine benzyl group dimethylamine, Alpha-Methyl benzyl group dimethylamine, 2-(dimethylamino methyl) phenol, 2,4,6-tri-(dimethylamino methyl) phenol and 1,8-diazabicyclo (5,4,0) one or more in endecatylene-7；
One or more in triphenylphosphine, trimethyl-phosphine, triethyl phosphine, tributylphosphine, three (p-methylphenyl) phosphines and three (nonyl phenyl) phosphine of described organic phosphine compound.
7. secondary compounding process according to claim 1 and 2, is characterized in that: one or more in Brazil wax, synthetic wax and mineral wax of described releasing agent；
Described low stress modified dose is liquid silicone oil, silicone rubber powder or their mixture；
Described coloring agent is white carbon black；
One or more in Brominated Epoxy, antimony oxide, zinc molybdate, Firebrake ZB, magnesium hydroxide and aluminium hydroxide of described fire retardant；
One or more in γ-glycidyl propyl ether trimethoxy silane, γ aminopropyltriethoxy silane, γ mercaptopropyitrimethoxy silane and γ-aminopropyltrimethoxysilane of described silane coupler.
8. secondary compounding process according to claim 7, is characterized in that: the scope of the particle diameter d50 of described zinc molybdate, Firebrake ZB, magnesium hydroxide and aluminium hydroxide is all 0.1～10 μm.
9. secondary compounding process according to claim 1 and 2, is characterized in that: one or more in the compound of hydrated metal oxide, acid metal salt and magnalium of described inorganic ion scavenger；
Described hydrated metal oxide is Bi2O3·3H2O；Described acid metal salt is Zr (HPO4)2·H2O；The compound of described magnalium is Mg6Al2(CO3)(OH)16·4H2O。
10. secondary compounding process according to claim 1, is characterized in that: the described equipment used by melting mixing includes one or more in double roll mill, single extruders, twin screw compounder.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107353546A (en) * | 2017-09-02 | 2017-11-17 | 苏建 | A kind of epoxy resin composition for semiconductor encapsulation |
| CN108070213A (en) * | 2016-11-16 | 2018-05-25 | 北京科化新材料科技有限公司 | A kind of composition epoxy resin and its application |
| CN109517336A (en) * | 2018-10-31 | 2019-03-26 | 科化新材料泰州有限公司 | A kind of super heat-resisting, high thermal conductivity epoxy-plastic packaging material preparation method of semiconductor-sealing-purpose |
| CN111899954A (en) * | 2020-07-28 | 2020-11-06 | 江苏科化新材料科技有限公司 | Thermosetting epoxy resin composition for packaging inductor and preparation method thereof |
| CN112625398A (en) * | 2020-12-02 | 2021-04-09 | 北京科化新材料科技有限公司 | Reflecting material, preparation method thereof and application of reflecting material to LED reflecting support |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1546566A (en) * | 2003-12-12 | 2004-11-17 | 无锡市化工研究设计院 | Molding compound for sheet tantalum capacitor |
| CN1687229A (en) * | 2005-04-15 | 2005-10-26 | 江苏中电华威电子股份有限公司 | Method for preparing composition of epoxy resin for packaging semiconductor |
| CN102382422A (en) * | 2010-09-01 | 2012-03-21 | 北京科化新材料科技有限公司 | Epoxy resin composition with hydrated alumina |
| CN103421272A (en) * | 2012-05-22 | 2013-12-04 | 汉高华威电子有限公司 | Epoxy resin composition used for electronic packaging and preparation method thereof |
-
2014
- 2014-12-18 CN CN201410799095.8A patent/CN105778411B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1546566A (en) * | 2003-12-12 | 2004-11-17 | 无锡市化工研究设计院 | Molding compound for sheet tantalum capacitor |
| CN1687229A (en) * | 2005-04-15 | 2005-10-26 | 江苏中电华威电子股份有限公司 | Method for preparing composition of epoxy resin for packaging semiconductor |
| CN102382422A (en) * | 2010-09-01 | 2012-03-21 | 北京科化新材料科技有限公司 | Epoxy resin composition with hydrated alumina |
| CN103421272A (en) * | 2012-05-22 | 2013-12-04 | 汉高华威电子有限公司 | Epoxy resin composition used for electronic packaging and preparation method thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108070213A (en) * | 2016-11-16 | 2018-05-25 | 北京科化新材料科技有限公司 | A kind of composition epoxy resin and its application |
| CN107353546A (en) * | 2017-09-02 | 2017-11-17 | 苏建 | A kind of epoxy resin composition for semiconductor encapsulation |
| CN109517336A (en) * | 2018-10-31 | 2019-03-26 | 科化新材料泰州有限公司 | A kind of super heat-resisting, high thermal conductivity epoxy-plastic packaging material preparation method of semiconductor-sealing-purpose |
| CN111899954A (en) * | 2020-07-28 | 2020-11-06 | 江苏科化新材料科技有限公司 | Thermosetting epoxy resin composition for packaging inductor and preparation method thereof |
| CN112625398A (en) * | 2020-12-02 | 2021-04-09 | 北京科化新材料科技有限公司 | Reflecting material, preparation method thereof and application of reflecting material to LED reflecting support |
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