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CN107353546A - A kind of epoxy resin composition for semiconductor encapsulation - Google Patents

A kind of epoxy resin composition for semiconductor encapsulation Download PDF

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Publication number
CN107353546A
CN107353546A CN201710782706.1A CN201710782706A CN107353546A CN 107353546 A CN107353546 A CN 107353546A CN 201710782706 A CN201710782706 A CN 201710782706A CN 107353546 A CN107353546 A CN 107353546A
Authority
CN
China
Prior art keywords
epoxy resin
resin composition
semiconductor encapsulation
present
raw material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN201710782706.1A
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Chinese (zh)
Inventor
苏建
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CN201710782706.1A priority Critical patent/CN107353546A/en
Publication of CN107353546A publication Critical patent/CN107353546A/en
Withdrawn legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L27/00Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
    • C08L27/02Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L27/12Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
    • C08L27/18Homopolymers or copolymers or tetrafluoroethene
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2203/00Applications
    • C08L2203/20Applications use in electrical or conductive gadgets
    • C08L2203/206Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00Polymer mixtures characterised by other features
    • C08L2205/03Polymer mixtures characterised by other features containing three or more polymers in a blend

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

A kind of epoxy resin composition for semiconductor encapsulation of the present invention, its raw material and raw material weight percentage composition are as follows:Resin 40 50%;EMA 0.1 1%;Glass fibre 0.1 3%;Polyvinyl alcohol 0.1 3%;Butyl titanate 0.1 3%;Polytetrafluoroethylene (PTFE) 40 60%.Release property, continuously shaped property when the epoxy resin composition for semiconductor encapsulation of the present invention is to the cohesive of cupric oxide and shaping is excellent, if be packaged with the epoxy resin composition for semiconductor encapsulation to electronic units such as IC, LSI, semiconductor device excellent in reliability can be obtained.

Description

A kind of epoxy resin composition for semiconductor encapsulation
Technical field
The present invention relates to epoxy resin composition for semiconductor encapsulation.
Background technology
In package semiconductor assembling procedure, by being thermally compressed gold between the aluminium electrode of semiconductor chip and inner lead Category line turns into main flow now come the method being electrically connected.In addition, in recent years along with the miniaturization of electronic device, lightweight, The market trends of high performance, highly integrated, more pinizations of electronic unit develop year by year.It is it is therefore desirable to more more complicated than in the past Wire bonding process, during using copper lead frame, due in 200~250 DEG C of condition of high temperature exposure for a long time, thus copper surface Oxidation is more carried out.
Under this situation, even if the semiconductor sealing material that the conventional cohesive for unoxidized copper surface is excellent, In the case of the different cupric oxide of surface state is also often adhesive poor, when mold is removed after resin-encapsulated so as to appear in, The problem of causing stripping during reflow.
Insert for suppressing to peel off with the cohesive of encapsulating material resin is opposite with the release property for mould Index, accordingly, there exist such issues that release property is poor, mouldability reduces if cohesive is improved.Using electronic unit It is highly integrated and copper frame to be oxidized into the former of problem, in order to take into account cohesive and release property, it is proposed that addition aoxidizes poly- second Method of the half ester compound of the copolymer of alkene wax and alhpa olefin and maleic acid as releasing agent.(referring for example to patent document 1, 2.) according to this method, although excellent to the cohesive and release property of unoxidized copper, due to and used OPE, The problem of potting resin reduces to the cohesive of oxidized copper frame thus be present.Moreover, it is as short as carbon atom for alhpa olefin part For the copolymer releasing agent (referring for example to patent document 3) of less than 25, (the demoulding of blow vent blocking etc. of continuously shaped property be present Property) it is poor the problem of.
The content of the invention
The present invention be in view of the situation and complete, and release property good to the cohesive of cupric oxide, even to be provided Continuous mouldability also excellent epoxy resin composition for semiconductor encapsulation.
The present inventor furthers investigate, as a result found, by semiconductor-sealing-purpose ring to solve above-mentioned problem repeatedly It can reach above-mentioned purpose using specific releasing agent in epoxy resin composition, so far complete the present invention.
That is, the present invention is as follows:
A kind of epoxy resin composition for semiconductor encapsulation, its raw material and raw material weight percentage composition are as follows:
Resin 40-50%;
EMA 0.1-1%;
Glass fibre 0.1-3%;
Polyvinyl alcohol 0.1-3%;
Butyl titanate 0.1-3%;
Polytetrafluoroethylene (PTFE) 40-60%.
The demoulding when epoxy resin composition for semiconductor encapsulation of the present invention is to the cohesive of cupric oxide and shaping Property, continuously shaped property are excellent, if sealed with the epoxy resin composition for semiconductor encapsulation to electronic units such as IC, LSI Dress, then can obtain semiconductor device excellent in reliability.
Embodiment
The present invention is described in detail below in conjunction with specific embodiment, herein illustrative examples and explanation of the invention For explaining the present invention, but it is not as a limitation of the invention.
Embodiment
A kind of epoxy resin composition for semiconductor encapsulation of the present invention, its raw material and raw material weight percentage composition are such as Under:Resin 45%, EMA 0.5%, glass fibre 0.5%, polyvinyl alcohol 1%, butyl titanate 2%, poly- four PVF 51%.
Embodiments of the invention are the foregoing is only, are not intended to limit the scope of the invention, it is every to utilize this hair The equivalent structure or equivalent flow conversion that bright description is made, or directly or indirectly it is used in other related technology necks Domain, it is included within the scope of the present invention.

Claims (1)

1. a kind of epoxy resin composition for semiconductor encapsulation, it is characterised in that its raw material and raw material weight percentage composition are as follows:
Resin 40-50%;
EMA 0.1-1%;
Glass fibre 0.1-3%;
Polyvinyl alcohol 0.1-3%;
Butyl titanate 0.1-3%;
Polytetrafluoroethylene (PTFE) 40-60%.
CN201710782706.1A 2017-09-02 2017-09-02 A kind of epoxy resin composition for semiconductor encapsulation Withdrawn CN107353546A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710782706.1A CN107353546A (en) 2017-09-02 2017-09-02 A kind of epoxy resin composition for semiconductor encapsulation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710782706.1A CN107353546A (en) 2017-09-02 2017-09-02 A kind of epoxy resin composition for semiconductor encapsulation

Publications (1)

Publication Number Publication Date
CN107353546A true CN107353546A (en) 2017-11-17

Family

ID=60289918

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710782706.1A Withdrawn CN107353546A (en) 2017-09-02 2017-09-02 A kind of epoxy resin composition for semiconductor encapsulation

Country Status (1)

Country Link
CN (1) CN107353546A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102181127A (en) * 2011-03-30 2011-09-14 同济大学 Preparation method of glass fiber reinforced epoxy resin composite material modified by reclaimed circuit board powder
CN103897344A (en) * 2012-12-26 2014-07-02 第一毛织株式会社 Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated using the same
CN105199276A (en) * 2015-07-28 2015-12-30 苏州新区特氟龙塑料制品厂 Formula of high-viscosity modified polytetrafluoroethylene
CN105647092A (en) * 2016-04-13 2016-06-08 苏州锦腾电子科技有限公司 Glass fiber reinforced plastic and preparation method thereof
CN105778411A (en) * 2014-12-18 2016-07-20 北京首科化微电子有限公司 Secondary mixing method of epoxy resin composition for semiconductor encapsulation

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102181127A (en) * 2011-03-30 2011-09-14 同济大学 Preparation method of glass fiber reinforced epoxy resin composite material modified by reclaimed circuit board powder
CN103897344A (en) * 2012-12-26 2014-07-02 第一毛织株式会社 Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated using the same
CN105778411A (en) * 2014-12-18 2016-07-20 北京首科化微电子有限公司 Secondary mixing method of epoxy resin composition for semiconductor encapsulation
CN105199276A (en) * 2015-07-28 2015-12-30 苏州新区特氟龙塑料制品厂 Formula of high-viscosity modified polytetrafluoroethylene
CN105647092A (en) * 2016-04-13 2016-06-08 苏州锦腾电子科技有限公司 Glass fiber reinforced plastic and preparation method thereof

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Application publication date: 20171117

WW01 Invention patent application withdrawn after publication