CN106674892A - Highly heat-conducting epoxy resin composition for fully encapsulated semiconductor device - Google Patents
Highly heat-conducting epoxy resin composition for fully encapsulated semiconductor device Download PDFInfo
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- CN106674892A CN106674892A CN201510757420.9A CN201510757420A CN106674892A CN 106674892 A CN106674892 A CN 106674892A CN 201510757420 A CN201510757420 A CN 201510757420A CN 106674892 A CN106674892 A CN 106674892A
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- Prior art keywords
- epoxy resin
- semiconductor device
- heat conduction
- high heat
- conduction type
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- 239000003822 epoxy resin Substances 0.000 title claims abstract description 72
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 72
- 239000000203 mixture Substances 0.000 title claims abstract description 51
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 239000000843 powder Substances 0.000 claims abstract description 37
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000003063 flame retardant Substances 0.000 claims abstract description 7
- -1 tertiary amine compound Chemical class 0.000 claims description 16
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 14
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 13
- 229920001568 phenolic resin Polymers 0.000 claims description 13
- 239000005011 phenolic resin Substances 0.000 claims description 13
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- 239000011256 inorganic filler Substances 0.000 claims description 8
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 8
- 229910000077 silane Inorganic materials 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000004593 Epoxy Substances 0.000 claims description 7
- 241001597008 Nomeidae Species 0.000 claims description 7
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 6
- 229910000410 antimony oxide Inorganic materials 0.000 claims description 6
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical group O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 6
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Natural products P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 5
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 5
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 4
- 229910001410 inorganic ion Inorganic materials 0.000 claims description 4
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 4
- 239000002516 radical scavenger Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- YWWDBCBWQNCYNR-UHFFFAOYSA-N trimethylphosphine Chemical compound CP(C)C YWWDBCBWQNCYNR-UHFFFAOYSA-N 0.000 claims description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 claims description 4
- 239000001993 wax Substances 0.000 claims description 4
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- 229930185605 Bisphenol Natural products 0.000 claims description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-O Imidazolium Chemical compound C1=C[NH+]=CN1 RAXXELZNTBOGNW-UHFFFAOYSA-O 0.000 claims description 3
- 229910001051 Magnalium Inorganic materials 0.000 claims description 3
- 239000006229 carbon black Substances 0.000 claims description 3
- 239000004203 carnauba wax Substances 0.000 claims description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- 229920002545 silicone oil Polymers 0.000 claims description 3
- 229920002379 silicone rubber Polymers 0.000 claims description 3
- 239000004945 silicone rubber Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 claims description 3
- SBGKCOJQKBHFTO-UHFFFAOYSA-N (2-nonylphenyl)phosphane Chemical class CCCCCCCCCC1=CC=CC=C1P SBGKCOJQKBHFTO-UHFFFAOYSA-N 0.000 claims description 2
- HUCQPHINKBNKRU-UHFFFAOYSA-N (4-methylphenyl)phosphane Chemical class CC1=CC=C(P)C=C1 HUCQPHINKBNKRU-UHFFFAOYSA-N 0.000 claims description 2
- AHDSRXYHVZECER-UHFFFAOYSA-N 2,4,6-tris[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC(CN(C)C)=C(O)C(CN(C)C)=C1 AHDSRXYHVZECER-UHFFFAOYSA-N 0.000 claims description 2
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical class CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 claims description 2
- 150000004941 2-phenylimidazoles Chemical class 0.000 claims description 2
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 claims description 2
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 claims description 2
- 229910020038 Mg6Al2 Inorganic materials 0.000 claims description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 239000004844 aliphatic epoxy resin Substances 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims description 2
- 239000004305 biphenyl Substances 0.000 claims description 2
- 235000010290 biphenyl Nutrition 0.000 claims description 2
- 239000003086 colorant Substances 0.000 claims description 2
- 238000002485 combustion reaction Methods 0.000 claims description 2
- 238000009833 condensation Methods 0.000 claims description 2
- 230000005494 condensation Effects 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims description 2
- 239000011353 cycloaliphatic epoxy resin Substances 0.000 claims description 2
- VOOLKNUJNPZAHE-UHFFFAOYSA-N formaldehyde;2-methylphenol Chemical compound O=C.CC1=CC=CC=C1O VOOLKNUJNPZAHE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 2
- 239000011707 mineral Substances 0.000 claims description 2
- 150000004780 naphthols Chemical class 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- SCWKRWCUMCMVPW-UHFFFAOYSA-N phenyl n-methylcarbamate Chemical compound CNC(=O)OC1=CC=CC=C1 SCWKRWCUMCMVPW-UHFFFAOYSA-N 0.000 claims description 2
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 claims description 2
- RXJKFRMDXUJTEX-UHFFFAOYSA-N triethylphosphine Chemical compound CCP(CC)CC RXJKFRMDXUJTEX-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- PMJHHCWVYXUKFD-SNAWJCMRSA-N (E)-1,3-pentadiene Chemical compound C\C=C\C=C PMJHHCWVYXUKFD-SNAWJCMRSA-N 0.000 claims 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 claims 1
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- 125000002619 bicyclic group Chemical group 0.000 claims 1
- 125000000623 heterocyclic group Chemical group 0.000 claims 1
- 150000004693 imidazolium salts Chemical group 0.000 claims 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 16
- 238000000034 method Methods 0.000 abstract description 8
- 238000005538 encapsulation Methods 0.000 abstract description 5
- 238000011049 filling Methods 0.000 abstract description 5
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 abstract description 2
- 238000000465 moulding Methods 0.000 description 8
- 238000011156 evaluation Methods 0.000 description 6
- 239000004033 plastic Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 239000000155 melt Substances 0.000 description 3
- 239000005022 packaging material Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 235000015895 biscuits Nutrition 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 239000010426 asphalt Substances 0.000 description 1
- 150000003851 azoles Chemical class 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002118 epoxides Chemical group 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Landscapes
- Epoxy Resins (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
The invention relates to epoxy resin compositions, and in particular to a highly heat-conducting epoxy resin composition for a fully encapsulated semiconductor device with the advantages of high thermal conductivity and excellent forming process performances. Spherical alumina powder is added into the highly heat-conducting epoxy resin composition for the fully encapsulated semiconductor device, so that the filling property of the highly heat-conducting epoxy resin composition is improved, and the requirement on the highly heat-conducting epoxy resin composition used by the fully encapsulated semiconductor device with a back thickness of less than 0.5mm, particularly 0.43mm, can be met. The highly heat-conducting epoxy resin composition is a material for semiconductor encapsulation with excellent filling property. The highly heat-conducting epoxy resin composition disclosed by the invention has the advantages of necessary fluidity, and high reliability and flame retardant property.
Description
Technical field
The present invention relates to composition epoxy resin, more particularly to highly thermally conductive performance, and moulded manufacturability
The good high heat conduction type composition epoxy resin suitable for total incapsulation semiconductor device of energy.
Background technology
In recent years, total incapsulation discrete-semiconductor device is due to easy to assembly, relative to half encapsulating semiconductor device
Part has obtained faster development, and for the total incapsulation epoxy resin of semiconductor packages is then required
Material has high thermal conductivity and excellent building-up property, and with excellent fire resistance and energy
Enough meet environmental requirement.Total incapsulation semiconductor device is mainly used for powerful electronic product, and by
In the special structural requirement of total incapsulation semiconductor device, its encapsulation is a kind of typical asymmetric encapsulation.Entirely
The back side (fin one side) of encapsulating semiconductor device is general relatively thin, is 0.5～0.7mm, if thickness
More than 0.7mm, the thermal diffusivity of total incapsulation semiconductor device can be had a strong impact on.When radiating bad, contain
Operationally, temperature can reach more than 70 DEG C to the electronic product of total incapsulation semiconductor device, and high temperature will be right
The job stability of the audion of encapsulation produces strong influence, and then to the performance of whole electronic product
Produce significant impact.Therefore, in order to improve thermal diffusivity, it is ensured that the functional reliability of electronic product, mesh
The back side thickness of front total incapsulation semiconductor device is to slim development.Back side thickness most thin in the market is
0.43mm.After back side thickness reduces, narrow and small due to backside space, semiconductor device is being encapsulated
When, can cause to pack resistance difference increase of the plastic packaging material used when its front and the back side are flowed, so as to make
Also become big into flow velocity difference, easily cause plastic packaging material and overleaf form pore, or cause to fill discontented etc.
Plastic package process defect.
In the middle of disclosed prior art, using silane coupler to composition epoxy resin in inorganic fill out
Expect the content (for example, Japanese Unexamined Patent Publication 8-20673 publication) for being surface-treated and being increased inorganic filler,
Low viscosity and high fluidity when this technical scheme can keep composition epoxy resin molding.However, should
The molecular weight of the traditional silane coupler used in method, the adhesion between inorganic filler
It is poor, certain toughening effect is not had, so that the melt viscosity of composition epoxy resin is little not enough,
Therefore the technical scheme is required further improvement.A kind of epoxy is disclosed in Japanese Unexamined Patent Publication 2002-220515
Resin combination, amount of filler reaches 80%, and the melt viscosity of composition epoxy resin is higher, helical flow
Length is relatively low, but the building-up property of the composition epoxy resin is bad, using the epoxy composite
There is pore on the surface of the semiconductor device of thing (plastic packaging material) encapsulation.
The content of the invention
The purpose of the present invention is for the deficiencies in the prior art, so as to provide with highly thermally conductive performance, filling
The good high heat conduction type epoxy resin group for total incapsulation semiconductor device of performance and building-up property
Compound.
The present invention the high heat conduction type composition epoxy resin for total incapsulation semiconductor device component and
Content is：
Used in the high heat conduction type composition epoxy resin for total incapsulation semiconductor device of the present invention
Epoxy resin be monomer, oligomer or the polymer for having more than 2 epoxide groups in 1 epoxy molecule,
Its molecular weight and molecular structure are not particularly limited.Above-mentioned epoxy resin can be selected from o-cresol formaldehyde asphalt mixtures modified by epoxy resin
Fat, bisphenol A type epoxy resin, bisphenol f type epoxy resin, linear phenolic epoxy resin, biphenyl type ring
Oxygen tree fat, dicyclopentadiene type epoxy resin, open chain aliphatic epoxy resin, cycloaliphatic epoxy resin,
One or more in heterocyclic-type epoxy resin etc..
Used in the high heat conduction type composition epoxy resin for total incapsulation semiconductor device of the present invention
Phenolic resin be monomer, oligomer or polymer that 1 phenolic aldehyde intramolecular has more than 2 hydroxyls, its
Molecular weight and molecular structure are not particularly limited.Above-mentioned phenolic resin can be selected from phenol linear phenolic resin
And its derivant (derivant such as phenol alkyl phenolic resin), phenyl methylcarbamate linear phenolic resin and its derivant,
The condensation substance of monohydroxy or dihydroxy naphthlene phenolic resin and its derivant, xylol and phenol or naphthols,
One or more in copolymer of dicyclopentadiene and phenol etc..
Used in the high heat conduction type composition epoxy resin for total incapsulation semiconductor device of the present invention
Inorganic filler be highly thermally conductive inorganic filler.Described inorganic filler can be selected from crystal type titanium dioxide
One kind or several in Si powder, angle-style aluminium sesquioxide powder, alpha-silicon nitride powders, aluminium nitride powder etc.
Kind.Above-mentioned powdered quartz powder, angle-style aluminium sesquioxide powder, alpha-silicon nitride powders, nitridation
Aluminium powder may be used alone or in combination.Additionally, the surface of described inorganic filler can use
Silane coupler is surface-treated.
Described powdered quartz powder, angle-style aluminium sesquioxide powder, alpha-silicon nitride powders, nitrogen
The meso-position radius (D50) for changing aluminium powder are all 10～40 microns.
The meso-position radius (D50) of described ball-aluminium oxide powder are 5～30 microns.
Described fire retardant is the fire retardant that brominated epoxy resin coordinates with antimony oxide, wherein, bromine
It is 10 for the weight ratio of epoxy resin and antimony oxide：1.
Described curing accelerator, as long as the curing reaction of epoxy radicals and phenolic hydroxyl group, nothing can be promoted
It is particularly limited to.Described curing accelerator can be selected from imidazolium compoundss, tertiary amine compound and organic phosphine
One or more in compound etc..
Described imidazolium compoundss are selected from 2-methylimidazole, 2,4- methylimidazoles, 2- ethyl -4- methyl miaows
One kind or several in azoles, 2- phenylimidazoles, 2- phenyl -4-methylimidazole and 2- (heptadecyl) imidazoles etc.
Kind.
Described tertiary amine compound is selected from triethylamine benzyl group dimethylamine, Alpha-Methyl benzyl group dimethylamine, 2- (two
Methylamine ylmethyl) phenol, 2,4,6- tri- (dimethylamino methyl) phenol and 1,8- diazabicyclo (5,4,0)
One or more in endecatylene -7 etc..
Described organic phosphine compound selected from triphenylphosphine, trimethyl-phosphine, triethyl phosphine, tributylphosphine,
One or more in three (p-methylphenyl) phosphines and three (nonyl phenyl) phosphines etc..
Described releasing agent can be selected from the one kind or several in Brazil wax, synthetic wax and mineral matter wax
Kind.
Described inorganic ion scavenger is including but not limited to selected from hydrated metal oxide (such as
Bi2O3·3H2O), acid metal salt is (such as：Zr(HPO4)2·H2O) and magnalium compound (such as：
Mg6Al2(CO3)(OH)16·4H2O one or more in).
Described silane coupler can be selected from γ-glycidyl propyl ether trimethoxy silane, gamma-amino
In propyl-triethoxysilicane, γ mercaptopropyitrimethoxy silane and γ-aminopropyltrimethoxysilane
One or more.
Described coloring agent is white carbon black.
Described low stress modified dose is liquid silicone oil, silicone rubber powder or their mixture etc..
The preparation side of the high heat conduction type composition epoxy resin for total incapsulation semiconductor device of the present invention
Method：The epoxy resin of 5～10wt% of the high heat conduction type composition epoxy resin total amount described in accounting for,
The phenolic resin of 5～8wt%, the inorganic filler of 70～81wt%, the ball-aluminium oxide powder of 3～15wt%,
The fire retardant of 1～1.5wt%, the curing accelerator of 0.05～0.1wt%, the releasing agent of 0.4～0.6wt%,
The inorganic ion scavenger of 0.4～0.6wt%, the silane coupler of 0.4～0.6wt%, 0.4～0.6wt%
Low stress modified dose of mix homogeneously of toner and 0.8～1wt%, be then in temperature by the mixture for obtaining
Melting mixing is uniform on 70～100 DEG C of double roll mills, by the uniform material of melting mixing from double roller
Natural cooling is removed on cylinder kneading machine, is crushed, obtain the described height for total incapsulation semiconductor device
The powder-material of heat-conducting type composition epoxy resin；Biscuit is further pre-formed as, is obtained for total incapsulation
The moulding material of the high heat conduction type composition epoxy resin of semiconductor device.
The present invention in for the high heat conduction type composition epoxy resin of total incapsulation semiconductor device by adding
Plus spherical alumina powder, the filling capacity of high heat conduction type composition epoxy resin had both been improved, again can
It is 0.43mm to meet the back side thickness to total incapsulation semiconductor device less than 0.5mm, particularly back side thickness
The requirement of the high heat conduction type composition epoxy resin for being used, is a kind of excellent semiconductor packages of fillibility
Use material.The high heat conduction type composition epoxy resin of the present invention has been also equipped with necessary mobility, height simultaneously
Reliability, anti-flammability.
The present invention is further illustrated with reference to embodiments, but this is only citing, is not to the present invention's
Limit.
Specific embodiment
Embodiment 1
O-cresol formaldehyde epoxy resin A1 (Japanese DIC Corporation systems " N-665 ") 10wt%
Phenol linear phenolic resin B1 (Japanese DIC Corporation systems " TD-2131 ") 5wt%
Powdered quartz powder D1 (d50 is 25 μm) 75.5wt%
Ball-aluminium oxide powder E1 (D50 is 5 microns) 5%wt%
Fire retardant brominated epoxy resin and antimony oxide (brominated epoxy resin and antimony oxide
Weight ratio is 10：1) 1.5wt%
Curing accelerator 2-methylimidazole C 0.05wt%
Brazil wax 0.5wt%
Inorganic ion scavenger (Japanese TOAGOSEI Co., Ltd IXE500 (Bi2O3·3H2O))
0.45wt%
γ-glycidyl propyl ether trimethoxy silane 0.5wt%
White carbon black 0.5wt%
Liquid silicone oil 0.5wt%
Silicone rubber powder 0.5wt% (d50 is 1 μm)
Weigh according to said ratio and after mix homogeneously, be again 70～100 DEG C in temperature by the mixture for obtaining
Melting mixing is uniform on double roll mills of preheating, and the uniform material of melting mixing is mixed from double roller cylinder
Natural cooling is removed in mill, is crushed, obtain the high heat conduction type epoxy for total incapsulation semiconductor device
The powder-material of resin combination；Then biscuit is pre-formed as, is obtained for total incapsulation semiconductor device
The moulding material of high heat conduction type composition epoxy resin.Using the following method to obtaining for total incapsulation half
The moulding material of the high heat conduction type composition epoxy resin of conductor device is evaluated, and the results are shown in Table 1.
Gel time：Hot plate method, by electric hot plate 175 ± 1 DEG C are heated to, and take the above-mentioned forming materials of 0.3～0.5g
The powder of material sample is placed on electric hot plate, and powder is terminal when gradually becoming colloidal state by fluid, reads institute
Take time.
Spiral flow length：By EMMI-1-66 helical flow metal dies on transfer modling press
Determine, briquetting pressure is 70 ± 2Kgf/cm2, mold temperature is 175 ± 2 DEG C, takes above-mentioned moulding material sample
20 ± the 5g of powder of product is tested.
Melt viscosity：The high heat conduction type epoxy for obtaining is determined using the heightization Flow Meter of Japanese Shimadzu Corporation
The melt viscosity of resin combination moulding material.Test condition：Mouth mold is 0.5 × 1.0mm, and load is
10kg, temperature is 175 DEG C.
Heat conductivity：According to GB GB/T3139-82, the high heat conduction type ring for obtaining is determined using conductometer
The heat conductivity of epoxy resin composition moulding material.
Anti-flammability：Above-mentioned moulding material sample is made 1/16 inch under the conditions of 175 DEG C/25Mpa
The sample block of degree, then carries out solidify afterwards under conditions of 175 DEG C/6h, presses finally by vertical combustion
Flame retardant test is carried out according to GB4609-84.
Building-up property：The high-power total incapsulation device TO-220F of plastic packaging (back side thickness is 0.43mm),
Internal porosity is determined with ultrasonic scanning, and front step surface pore and back pore are estimated.Jing after inspection
The number of elements of underproof high-power total incapsulation device TO-220F is fewer, shows that building-up property is better.
Embodiment 2～8
The composition of high heat conduction type composition epoxy resin is shown in Table 1, and preparation method is with embodiment 1, evaluation side
With embodiment 1, evaluation result is shown in Table 1 to method.
Comparative example 1～4
The composition of composition epoxy resin is shown in Table 2, and, with embodiment 1, evaluation methodology is with enforcement for preparation method
Example 1, evaluation result is shown in Table 2.
Adopt in embodiment 2～8, the composition epoxy resin of comparative example 1～4 beyond embodiment 1
Composition is as follows.
Dicyclopentadiene type epoxy Resin A 2 (Japanese DIC Corporation systems " HP-7200 ")
Phenol alkyl phenolic resin B2 (Mitsui Chemicals, Inc. system " XLC-4L ")
Angle-style aluminium sesquioxide powder D2 (d50 is 25 μm)
Ball-aluminium oxide powder E2 (D50 is 15 microns)
Ball-aluminium oxide powder E3 (D50 is 30 microns)
Table 1：The composition and evaluation result (by weight percentage) of example composition
Table 2：The composition and evaluation result (by weight percentage) of comparative example compositionss
Can be seen that by above-described embodiment and comparative example, comprising partly leading for total incapsulation for ball-aluminium oxide powder
The filling capacity of the high heat conduction type composition epoxy resin of body device is substantially better than without ball-aluminium oxide powder
Composition epoxy resin.
Claims (10)
1. a kind of high heat conduction type composition epoxy resin for total incapsulation semiconductor device, is characterized in that,
The component and content of described high heat conduction type composition epoxy resin be：
Described inorganic filler is selected from powdered quartz powder, angle-style aluminium sesquioxide powder, nitrogen
One or more in SiClx powder, aluminium nitride powder.
2. the high heat conduction type epoxy resin for total incapsulation semiconductor device according to claim 1
Compositionss, is characterized in that：Described epoxy resin is selected from o-cresol formaldehyde epoxy resin, bisphenol A-type ring
It is oxygen tree fat, bisphenol f type epoxy resin, linear phenolic epoxy resin, biphenyl type epoxy resin, bicyclic
Pentadiene type epoxy resin, open chain aliphatic epoxy resin, cycloaliphatic epoxy resin, heterocyclic type epoxy
One or more in resin.
3. the high heat conduction type epoxy resin for total incapsulation semiconductor device according to claim 1
Compositionss, is characterized in that：Described phenolic resin selected from phenol linear phenolic resin and its derivant,
Phenyl methylcarbamate linear phenolic resin and its derivant, monohydroxy or dihydroxy naphthlene phenolic resin and its derivant,
One kind in the copolymer of the condensation substance, dicyclopentadiene and phenol of xylol and phenol or naphthols or
It is several.
4. the high heat conduction type epoxy resin for total incapsulation semiconductor device according to claim 1
Compositionss, is characterized in that：Described powdered quartz powder, angle-style aluminium sesquioxide powder,
Alpha-silicon nitride powders, the meso-position radius of aluminium nitride powder are all 10～40 microns；
The meso-position radius of described ball-aluminium oxide powder are 5～30 microns.
5. the high heat conduction type epoxy resin for total incapsulation semiconductor device according to claim 1
Compositionss, is characterized in that：Described fire retardant is the resistance that brominated epoxy resin coordinates with antimony oxide
Combustion agent, wherein, brominated epoxy resin is 10 with the weight ratio of antimony oxide：1.
6. the high heat conduction type epoxy resin for total incapsulation semiconductor device according to claim 1
Compositionss, is characterized in that：Described curing accelerator is selected from imidazolium compoundss, tertiary amine compound and has
One or more in machine phosphine compound.
7. the high heat conduction type epoxy resin for total incapsulation semiconductor device according to claim 6
Compositionss, is characterized in that：Described imidazolium compoundss selected from 2-methylimidazole, 2,4- methylimidazoles,
2-ethyl-4-methylimidazole, 2- phenylimidazoles, 2- phenyl -4-methylimidazole and 2- (heptadecyl) imidazoles
In one or more；
Described tertiary amine compound is selected from triethylamine benzyl group dimethylamine, Alpha-Methyl benzyl group dimethylamine, 2- (two
Methylamine ylmethyl) phenol, 2,4,6- tri- (dimethylamino methyl) phenol and 1,8- diazabicyclo (5,4,0)
One or more in endecatylene -7；
Described organic phosphine compound selected from triphenylphosphine, trimethyl-phosphine, triethyl phosphine, tributylphosphine,
One or more in three (p-methylphenyl) phosphines and three (nonyl phenyl) phosphines.
8. the high heat conduction type epoxy resin for total incapsulation semiconductor device according to claim 1
Compositionss, is characterized in that：Described releasing agent is in Brazil wax, synthetic wax and mineral matter wax
One or more；
Described silane coupler is selected from γ-glycidyl propyl ether trimethoxy silane, gamma-amino propyl group
In triethoxysilane, γ mercaptopropyitrimethoxy silane and γ-aminopropyltrimethoxysilane one
Plant or several；
Described coloring agent is white carbon black；
Described low stress modified dose is liquid silicone oil, silicone rubber powder or their mixture.
9. the high heat conduction type epoxy resin for total incapsulation semiconductor device according to claim 1
Compositionss, is characterized in that：Described inorganic ion scavenger is selected from hydrated metal oxide, acid gold
One or more in the compound of category salt and magnalium.
10. the high heat conduction type epoxy resin for total incapsulation semiconductor device according to claim 9
Compositionss, is characterized in that：Described hydrated metal oxide is Bi2O3·3H2O, described acidity gold
Category salt is Zr (HPO4)2·H2O, the compound of described magnalium is Mg6Al2(CO3)(OH)16·4H2O。
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107698936A (en) * | 2017-08-21 | 2018-02-16 | 江苏中鹏新材料股份有限公司 | Fire-retardant epoxy resin composition, fire-retardant epoxy resin material and preparation method thereof |
| CN108117724A (en) * | 2017-12-25 | 2018-06-05 | 科化新材料泰州有限公司 | It is a kind of for semiconductor-sealing-purpose can normal temperature storage type ring epoxy resin composition |
| CN108485186A (en) * | 2018-03-19 | 2018-09-04 | 长兴电子材料（昆山）有限公司 | A kind of high mould stream epoxy resin component of low smell and its application |
| CN109467881A (en) * | 2018-10-31 | 2019-03-15 | 科化新材料泰州有限公司 | A kind of super heat-resisting, high thermal conductivity epoxy-plastic packaging material of semiconductor-sealing-purpose |
| CN110396386A (en) * | 2019-07-26 | 2019-11-01 | 上海本诺电子材料有限公司 | A kind of chip sealing insulative glue and preparation method thereof with high thermal conductivity coefficient |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104513462A (en) * | 2014-12-22 | 2015-04-15 | 科化新材料泰州有限公司 | High-thermal-conductivity environment-friendly type epoxy resin composition and preparation method thereof |
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2015
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104513462A (en) * | 2014-12-22 | 2015-04-15 | 科化新材料泰州有限公司 | High-thermal-conductivity environment-friendly type epoxy resin composition and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107698936A (en) * | 2017-08-21 | 2018-02-16 | 江苏中鹏新材料股份有限公司 | Fire-retardant epoxy resin composition, fire-retardant epoxy resin material and preparation method thereof |
| CN108117724A (en) * | 2017-12-25 | 2018-06-05 | 科化新材料泰州有限公司 | It is a kind of for semiconductor-sealing-purpose can normal temperature storage type ring epoxy resin composition |
| CN108485186A (en) * | 2018-03-19 | 2018-09-04 | 长兴电子材料（昆山）有限公司 | A kind of high mould stream epoxy resin component of low smell and its application |
| CN109467881A (en) * | 2018-10-31 | 2019-03-15 | 科化新材料泰州有限公司 | A kind of super heat-resisting, high thermal conductivity epoxy-plastic packaging material of semiconductor-sealing-purpose |
| CN109467881B (en) * | 2018-10-31 | 2021-10-26 | 江苏科化新材料科技有限公司 | Super-heat-resistant high-thermal-conductivity epoxy plastic packaging material for semiconductor packaging |
| CN110396386A (en) * | 2019-07-26 | 2019-11-01 | 上海本诺电子材料有限公司 | A kind of chip sealing insulative glue and preparation method thereof with high thermal conductivity coefficient |
| CN116218143A (en) * | 2023-03-30 | 2023-06-06 | 深圳先进电子材料国际创新研究院 | High-heat-conductivity epoxy plastic package material and preparation method and application thereof |
| CN116606528A (en) * | 2023-07-18 | 2023-08-18 | 成都上泰科技有限公司 | Toughening modified epoxy resin high polymer for wide bandgap semiconductor packaging and preparation method thereof |
| CN116606528B (en) * | 2023-07-18 | 2023-09-29 | 成都上泰科技有限公司 | Toughening modified epoxy resin high polymer for wide bandgap semiconductor packaging and preparation method thereof |
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