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ATE354815T1 - Halbleiter-flüssigkristallzusammensetzung und verfahren zu ihrer herstellung - Google Patents

Halbleiter-flüssigkristallzusammensetzung und verfahren zu ihrer herstellung

Info

Publication number
ATE354815T1
ATE354815T1 AT02806436T AT02806436T ATE354815T1 AT E354815 T1 ATE354815 T1 AT E354815T1 AT 02806436 T AT02806436 T AT 02806436T AT 02806436 T AT02806436 T AT 02806436T AT E354815 T1 ATE354815 T1 AT E354815T1
Authority
AT
Austria
Prior art keywords
liquid crystal
crystal composition
producing
semiconductor liquid
semiconductor
Prior art date
Application number
AT02806436T
Other languages
English (en)
Inventor
A Paul Alivisatos
Liang-Shi Li
Original Assignee
Univ California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ California filed Critical Univ California
Application granted granted Critical
Publication of ATE354815T1 publication Critical patent/ATE354815T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K19/00—Liquid crystal materials
    • C09K19/02—Liquid crystal materials characterised by optical, electrical or physical properties of the components, in general
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K19/00—Liquid crystal materials
    • C09K19/52—Liquid crystal materials characterised by components which are not liquid crystals, e.g. additives with special physical aspect: solvents, solid particles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Crystal Substances (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
AT02806436T 2001-10-24 2002-10-23 Halbleiter-flüssigkristallzusammensetzung und verfahren zu ihrer herstellung ATE354815T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US34625301P 2001-10-24 2001-10-24
US39506402P 2002-07-12 2002-07-12

Publications (1)

Publication Number Publication Date
ATE354815T1 true ATE354815T1 (de) 2007-03-15

Family

ID=26994770

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02806436T ATE354815T1 (de) 2001-10-24 2002-10-23 Halbleiter-flüssigkristallzusammensetzung und verfahren zu ihrer herstellung

Country Status (8)

Country Link
US (1) US6884478B2 (de)
EP (1) EP1446695B1 (de)
JP (1) JP4411078B2 (de)
AT (1) ATE354815T1 (de)
AU (1) AU2002365267B2 (de)
CA (1) CA2464832C (de)
DE (1) DE60218332T2 (de)
WO (1) WO2003060596A2 (de)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7777303B2 (en) * 2002-03-19 2010-08-17 The Regents Of The University Of California Semiconductor-nanocrystal/conjugated polymer thin films
US8742253B1 (en) 2003-06-14 2014-06-03 InterPhases Solar Device configurations for CIS based solar cells
US7422790B1 (en) * 2003-09-04 2008-09-09 Nanosys, Inc. Methods of processing nanocrystals, and compositions, devices and systems including same
KR100718101B1 (ko) * 2003-10-29 2007-05-14 삼성에스디아이 주식회사 나노 금속 입자를 이용한 전계 발광 소자
US20050147976A1 (en) * 2003-12-29 2005-07-07 Xing Su Methods for determining nucleotide sequence information
US7645397B2 (en) 2004-01-15 2010-01-12 Nanosys, Inc. Nanocrystal doped matrixes
WO2005067524A2 (en) * 2004-01-15 2005-07-28 Nanosys, Inc. Nanocrystal doped matrixes
JP2005247921A (ja) * 2004-03-02 2005-09-15 Chisso Corp 微粒子を含有する液晶組成物およびそれを用いた液晶表示素子
US20050218398A1 (en) * 2004-04-06 2005-10-06 Availableip.Com NANO-electronics
US7862624B2 (en) * 2004-04-06 2011-01-04 Bao Tran Nano-particles on fabric or textile
US7019391B2 (en) 2004-04-06 2006-03-28 Bao Tran NANO IC packaging
US7330369B2 (en) * 2004-04-06 2008-02-12 Bao Tran NANO-electronic memory array
US20050218397A1 (en) * 2004-04-06 2005-10-06 Availableip.Com NANO-electronics for programmable array IC
US7746681B2 (en) 2005-01-07 2010-06-29 Invisage Technologies, Inc. Methods of making quantum dot films
WO2005101530A1 (en) 2004-04-19 2005-10-27 Edward Sargent Optically-regulated optical emission using colloidal quantum dot nanocrystals
US7773404B2 (en) 2005-01-07 2010-08-10 Invisage Technologies, Inc. Quantum dot optical devices with enhanced gain and sensitivity and methods of making same
US7742322B2 (en) * 2005-01-07 2010-06-22 Invisage Technologies, Inc. Electronic and optoelectronic devices with quantum dot films
CA2567156A1 (en) * 2004-05-17 2006-07-20 Cambrios Technology Corp. Biofabrication of transistors including field effect transistors
US7557028B1 (en) 2004-07-28 2009-07-07 Nanosys, Inc. Process for group III-V semiconductor nanostructure synthesis and compositions made using same
JP4555055B2 (ja) * 2004-11-12 2010-09-29 日立ソフトウエアエンジニアリング株式会社 高発光特性を有する半導体ナノ粒子
CA2519608A1 (en) 2005-01-07 2006-07-07 Edward Sargent Quantum dot-polymer nanocomposite photodetectors and photovoltaics
US7671398B2 (en) * 2005-02-23 2010-03-02 Tran Bao Q Nano memory, light, energy, antenna and strand-based systems and methods
CN1320051C (zh) * 2005-03-26 2007-06-06 吉林大学 透明高纳米相聚合物光学体材料的制备方法
WO2007016193A2 (en) * 2005-07-28 2007-02-08 Florida State University Research Foundation, Incorporated Nanoparticle synthesis and associated methods
US20070186846A1 (en) * 2005-12-21 2007-08-16 The Research Foundation Of State University Of New York Non-spherical semiconductor nanocrystals and methods of making them
PT2022108E (pt) * 2006-05-01 2009-07-29 Univ Wake Forest Dispositivos optoelectrónicos orgânicos e suas aplicações
CN101523628B (zh) 2006-05-01 2012-05-30 维克森林大学 纤维光电器件及其应用
US7393699B2 (en) 2006-06-12 2008-07-01 Tran Bao Q NANO-electronics
US20080149178A1 (en) * 2006-06-27 2008-06-26 Marisol Reyes-Reyes Composite organic materials and applications thereof
EP2360751A1 (de) 2006-08-07 2011-08-24 Wake Forest University Organischer Verbundwerkstoff
WO2008027571A2 (en) * 2006-08-30 2008-03-06 Liquidia Technologies, Inc. Nanoparticles having functional additives for self and directed assembly and methods of fabricating same
JP5251240B2 (ja) * 2007-05-10 2013-07-31 宇部興産株式会社 液晶相溶性第１３族元素ナノ粒子及びそのペースト並びにそれらの製法
US20080305045A1 (en) * 2007-06-07 2008-12-11 Prabhakaran Kuniyil Methods of synthesis of non-toxic multifunctional nanoparticles and applications
US20100204459A1 (en) * 2007-08-27 2010-08-12 The Regents Of The University Of California Systems and methods for producing multi-component colloidal structures
CN101911331B (zh) * 2007-11-01 2013-05-29 维克森林大学 横向有机光电器件及其应用
US8927383B2 (en) 2007-11-28 2015-01-06 National University Of Singapore Multilayer heterostructures for application in OLEDs and photovoltaic devices
US8907204B2 (en) * 2008-05-22 2014-12-09 Kaneka Corporation Thin film photoelectric conversion device and method for manufacturing the same
WO2010029550A2 (en) * 2008-09-11 2010-03-18 Ramot At Tel Aviv University Ltd. Novel nanostructures and process of preparing same
US8834965B2 (en) * 2009-02-12 2014-09-16 Xerox Corporation Organoamine stabilized silver nanoparticles and process for producing same
JP2010225985A (ja) * 2009-03-25 2010-10-07 Fujifilm Corp 光電変換半導体層とその製造方法、光電変換素子、及び太陽電池
EP2424941B1 (de) 2009-05-01 2017-05-31 Nanosys, Inc. Funktionalisierte matrizen zur dispergierung von nanostrukturen
US9372283B2 (en) * 2009-11-13 2016-06-21 Babak NIKOOBAKHT Nanoengineered devices based on electro-optical modulation of the electrical and optical properties of plasmonic nanoparticles
US9120970B2 (en) * 2010-07-15 2015-09-01 Merck Patent Gmbh Liquid crystalline media and liquid crystal displays with a polymer-stabilized homeotropic orientation
WO2012022417A1 (de) * 2010-08-19 2012-02-23 Merck Patent Gmbh Flüssigkristallines medium und flüssigkristallanzeigen
WO2012092195A1 (en) 2010-12-28 2012-07-05 Life Technologies Corporation Nanocrystals with high extinction coefficients and methods of making and using such nanocrystals
WO2013140083A1 (fr) * 2012-03-19 2013-09-26 Solarwell Dispositif émettant de la lumière contenant des nanocristaux colloïdaux semi-conducteurs anisotropes aplatis et procédés de fabrication de tels dispositifs
FR2988223B1 (fr) 2012-03-19 2016-09-02 Solarwell Dispositif emettant de la lumiere contenant des nanocristaux colloidaux semiconducteurs anisotropes aplatis et procede de fabrication de tels dispositifs
US9139770B2 (en) 2012-06-22 2015-09-22 Nanosys, Inc. Silicone ligands for stabilizing quantum dot films
TWI596188B (zh) 2012-07-02 2017-08-21 奈米系統股份有限公司 高度發光奈米結構及其製造方法
KR102203599B1 (ko) 2013-03-14 2021-01-14 나노시스, 인크. 무용매 양자점 교환 방법
JP6353410B2 (ja) * 2014-07-18 2018-07-04 富士フイルム株式会社 重合性液晶組成物、波長変換フィルム、波長変換部材およびその製造方法、バックライトユニット、液晶表示装置
JP6380979B2 (ja) * 2014-09-29 2018-08-29 富士フイルム株式会社 液晶組成物、偏光発光フィルム、波長変換部材およびその製造方法、バックライトユニット、液晶表示装置
RU2585795C1 (ru) * 2014-12-09 2016-06-10 Сергей Леонидович Шохор Электрооптическая ячейка
JP6453662B2 (ja) * 2015-02-09 2019-01-16 富士フイルム株式会社 液晶組成物、偏光発光フィルム、波長変換部材及びその製造方法、バックライトユニット、液晶表示装置
CN105158960B (zh) * 2015-07-24 2018-06-29 深圳市华星光电技术有限公司 一种液晶显示面板及偏光片的制作方法
EP3397588A4 (de) * 2015-12-31 2019-08-07 Dow Global Technologies, LLC Kontinuierlichen flusssynthese von nanostrukturmaterialien
CN106833679A (zh) * 2016-12-08 2017-06-13 上海大学 硒化镉量子点掺杂液晶材料的全息3d显示屏的制备方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4350644A (en) * 1978-05-15 1982-09-21 Minnesota Mining And Manufacturing Company Isopropylbenzene derivatives
US4625071A (en) 1984-11-05 1986-11-25 Chronar Corp. Particulate semiconductors and devices
DE69115688T2 (de) 1990-04-17 1996-08-14 Ecole Polytech Photovoltaische zellen
US5282357A (en) * 1990-04-19 1994-02-01 Trw Inc. High-performance dual-mode integral propulsion system
US5505928A (en) 1991-11-22 1996-04-09 The Regents Of University Of California Preparation of III-V semiconductor nanocrystals
US5262357A (en) 1991-11-22 1993-11-16 The Regents Of The University Of California Low temperature thin films formed from nanocrystal precursors
EP0613585A4 (de) 1991-11-22 1995-06-21 Univ California Halbleitende nanokristalle, die durch selbstzusammengesetzte einzelschichten mit festen anorganischen oberflüchen verbunden sind.
DE4207659A1 (de) 1992-03-11 1993-09-16 Abb Patent Gmbh Verfahren zur herstellung einer photoelektrochemischen zelle sowie eine demgemaess hergestellte zelle
JPH05308146A (ja) 1992-05-01 1993-11-19 Ricoh Co Ltd 有機光起電力素子
US5331183A (en) 1992-08-17 1994-07-19 The Regents Of The University Of California Conjugated polymer - acceptor heterojunctions; diodes, photodiodes, and photovoltaic cells
US5594263A (en) * 1993-03-26 1997-01-14 Uop Semiconductor device containing a semiconducting crystalline nanoporous material
US5504323A (en) 1993-12-07 1996-04-02 The Regents Of The University Of California Dual function conducting polymer diodes
US5537000A (en) 1994-04-29 1996-07-16 The Regents, University Of California Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices
US5523555A (en) 1994-09-14 1996-06-04 Cambridge Display Technology Photodetector device having a semiconductive conjugated polymer
GB9423692D0 (en) 1994-11-23 1995-01-11 Philips Electronics Uk Ltd A photoresponsive device
GB2296815B (en) 1994-12-09 1999-03-17 Cambridge Display Tech Ltd Photoresponsive materials
AU5386296A (en) 1995-04-05 1996-10-23 Uniax Corporation Smart polymer image processor
US5847787A (en) 1996-08-05 1998-12-08 Motorola, Inc. Low driving voltage polymer dispersed liquid crystal display device with conductive nanoparticles
WO1999000536A2 (en) * 1997-06-27 1999-01-07 University Of Southampton Porous film and method of preparation thereof
US6013871A (en) 1997-07-02 2000-01-11 Curtin; Lawrence F. Method of preparing a photovoltaic device
US5990479A (en) 1997-11-25 1999-11-23 Regents Of The University Of California Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes
US6207392B1 (en) 1997-11-25 2001-03-27 The Regents Of The University Of California Semiconductor nanocrystal probes for biological applications and process for making and using such probes
US6277740B1 (en) 1998-08-14 2001-08-21 Avery N. Goldstein Integrated circuit trenched features and method of producing same
US6440213B1 (en) 1999-10-28 2002-08-27 The Regents Of The University Of California Process for making surfactant capped nanocrystals
US6306736B1 (en) 2000-02-04 2001-10-23 The Regents Of The University Of California Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process
US6225198B1 (en) 2000-02-04 2001-05-01 The Regents Of The University Of California Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process
WO2001073150A1 (en) 2000-03-24 2001-10-04 The State Of Oregon, Acting By And Through The State Board Of Higher Education On Behalf Of The University Of Oregon Scaffold-organized clusters and electronic devices made using such clusters

Also Published As

Publication number Publication date
AU2002365267B2 (en) 2007-06-14
CA2464832A1 (en) 2003-07-24
DE60218332T2 (de) 2007-10-25
US20030136943A1 (en) 2003-07-24
AU2002365267A1 (en) 2003-07-30
JP4411078B2 (ja) 2010-02-10
JP2005515273A (ja) 2005-05-26
WO2003060596A2 (en) 2003-07-24
WO2003060596A3 (en) 2004-01-29
EP1446695B1 (de) 2007-02-21
US6884478B2 (en) 2005-04-26
EP1446695A4 (de) 2005-03-16
DE60218332D1 (de) 2007-04-05
CA2464832C (en) 2011-01-25
EP1446695A2 (de) 2004-08-18

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