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DE60135992D1 - Verfahren zur herstellung von silizium-einkristall-wafer - Google Patents

Verfahren zur herstellung von silizium-einkristall-wafer

Info

Publication number
DE60135992D1
DE60135992D1 DE60135992T DE60135992T DE60135992D1 DE 60135992 D1 DE60135992 D1 DE 60135992D1 DE 60135992 T DE60135992 T DE 60135992T DE 60135992 T DE60135992 T DE 60135992T DE 60135992 D1 DE60135992 D1 DE 60135992D1
Authority
DE
Germany
Prior art keywords
single crystal
silicon single
crystal wafer
producing silicon
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60135992T
Other languages
English (en)
Inventor
Izumi Fusegawa
Koji Kitagawa
Ryoji Hoshi
Masahiro Sakurada
Tomohiko Ohta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE60135992D1 publication Critical patent/DE60135992D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE60135992T 2000-06-30 2001-06-28 Verfahren zur herstellung von silizium-einkristall-wafer Expired - Lifetime DE60135992D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000199226 2000-06-30
PCT/JP2001/005565 WO2002002852A1 (fr) 2000-06-30 2001-06-28 Plaquette en silicium monocristallin et procede de fabrication

Publications (1)

Publication Number Publication Date
DE60135992D1 true DE60135992D1 (de) 2008-11-13

Family

ID=18697279

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60135992T Expired - Lifetime DE60135992D1 (de) 2000-06-30 2001-06-28 Verfahren zur herstellung von silizium-einkristall-wafer

Country Status (7)

Country Link
US (1) US6893499B2 (de)
EP (1) EP1310583B1 (de)
JP (1) JP3901092B2 (de)
KR (1) KR100801672B1 (de)
DE (1) DE60135992D1 (de)
TW (1) TW522456B (de)
WO (1) WO2002002852A1 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7129123B2 (en) * 2002-08-27 2006-10-31 Shin-Etsu Handotai Co., Ltd. SOI wafer and a method for producing an SOI wafer
DE60332542D1 (de) * 2002-09-19 2010-06-24 Showa Denko Kk Siliciumcarbid-einkristall und verfahren und vorrichtung zu seiner herstellung
JP2004172391A (ja) * 2002-11-20 2004-06-17 Sumitomo Mitsubishi Silicon Corp シリコンウェーハおよびその製造方法
TW200428637A (en) * 2003-01-23 2004-12-16 Shinetsu Handotai Kk SOI wafer and production method thereof
EP1513193A4 (de) * 2003-02-14 2007-02-28 Sumco Corp Verfahren zur herstellung eines silizium-wafers
US7704318B2 (en) * 2003-02-25 2010-04-27 Sumco Corporation Silicon wafer, SOI substrate, method for growing silicon single crystal, method for manufacturing silicon wafer, and method for manufacturing SOI substrate
JP4193610B2 (ja) * 2003-06-27 2008-12-10 信越半導体株式会社 単結晶の製造方法
JP4215249B2 (ja) * 2003-08-21 2009-01-28 コバレントマテリアル株式会社 シリコン種結晶およびシリコン単結晶の製造方法
JP4857517B2 (ja) * 2003-11-26 2012-01-18 信越半導体株式会社 アニールウエーハ及びアニールウエーハの製造方法
JP4661204B2 (ja) * 2004-12-16 2011-03-30 信越半導体株式会社 単結晶の製造方法およびアニールウェーハの製造方法ならびにアニールウェーハ
JP4742711B2 (ja) * 2005-04-08 2011-08-10 株式会社Sumco シリコン単結晶育成方法
US20060225639A1 (en) * 2005-04-08 2006-10-12 Toshiaki Ono Method for growing silicon single crystal, and silicon wafer
JP4604889B2 (ja) * 2005-05-25 2011-01-05 株式会社Sumco シリコンウェーハの製造方法、並びにシリコン単結晶育成方法
JP5188673B2 (ja) * 2005-06-09 2013-04-24 株式会社Ｓｕｍｃｏ Ｉｇｂｔ用のシリコンウェーハ及びその製造方法
EP1930484B1 (de) * 2005-07-13 2014-07-23 Shin-Etsu Handotai Co., Ltd. Verfahren zur herstellung eines silizium-einkristall
JP2007022825A (ja) * 2005-07-13 2007-02-01 Shin Etsu Handotai Co Ltd 単結晶の製造方法
JP2007210820A (ja) * 2006-02-08 2007-08-23 Toshiba Ceramics Co Ltd シリコン単結晶の製造方法
DE602007004173D1 (de) * 2006-12-01 2010-02-25 Siltronic Ag Silicium-Wafer und dessen Herstellungsmethode
JP5207706B2 (ja) * 2006-12-01 2013-06-12 ジルトロニック アクチエンゲゼルシャフト シリコンウエハ及びその製造方法
JP5207705B2 (ja) * 2006-12-07 2013-06-12 ジルトロニック アクチエンゲゼルシャフト シリコンウエハ及びその製造方法
US8434931B2 (en) * 2007-05-29 2013-05-07 Dow Global Technologies Llc Stirrer and apparatus for small volume mixing
WO2008146371A1 (ja) 2007-05-30 2008-12-04 Sumco Corporation シリコン単結晶引上装置
WO2010016586A1 (ja) 2008-08-08 2010-02-11 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体ウェーハの製造方法
JP5537802B2 (ja) * 2008-12-26 2014-07-02 ジルトロニック アクチエンゲゼルシャフト シリコンウエハの製造方法
KR100916843B1 (ko) 2009-01-13 2009-09-14 김영조 고효율 다결정 실리콘 잉곳 제조장치
KR101020429B1 (ko) 2009-02-12 2011-03-08 주식회사 엘지실트론 비저항 특성이 균일한 단결정 제조방법 및 이 방법에 의해 제조된 단결정
JP5636168B2 (ja) * 2009-05-18 2014-12-03 株式会社Sumco シリコン単結晶の育成方法
JP5993550B2 (ja) * 2011-03-08 2016-09-14 信越半導体株式会社 シリコン単結晶ウェーハの製造方法
JP5928363B2 (ja) * 2013-02-01 2016-06-01 信越半導体株式会社 シリコン単結晶ウエーハの評価方法
US9064823B2 (en) * 2013-03-13 2015-06-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method for qualifying a semiconductor wafer for subsequent processing
US10141413B2 (en) 2013-03-13 2018-11-27 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer strength by control of uniformity of edge bulk micro defects
KR101880196B1 (ko) 2015-09-07 2018-07-19 주식회사 파워큐 당구게임 관리시스템
JP6627800B2 (ja) * 2017-02-21 2020-01-08 信越半導体株式会社 シリコン単結晶ウエハの欠陥領域判定方法
US11873575B2 (en) 2020-11-30 2024-01-16 Globalwafers Co., Ltd. Ingot puller apparatus having heat shields with voids therein

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06103714B2 (ja) 1990-11-22 1994-12-14 信越半導体株式会社 シリコン単結晶の電気特性検査方法
JP2521007B2 (ja) 1992-06-30 1996-07-31 九州電子金属株式会社 シリコン単結晶の製造方法
IT1280041B1 (it) 1993-12-16 1997-12-29 Wacker Chemitronic Procedimento per il tiraggio di un monocristallo di silicio
JP3085146B2 (ja) * 1995-05-31 2000-09-04 住友金属工業株式会社 シリコン単結晶ウェーハおよびその製造方法
JPH08337490A (ja) 1995-06-09 1996-12-24 Shin Etsu Handotai Co Ltd 結晶欠陥の少ないシリコン単結晶及びその製造方法
DE69801903T2 (de) * 1997-04-09 2002-03-28 Memc Electronic Materials, Inc. Freistellenbeherrschendes silicium mit niedriger fehlerdichte
JPH1179889A (ja) 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ
TW505710B (en) * 1998-11-20 2002-10-11 Komatsu Denshi Kinzoku Kk Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon single crystal wafer
JP4422813B2 (ja) 1999-03-26 2010-02-24 シルトロニック・ジャパン株式会社 シリコン単結晶の製造方法
JP4634553B2 (ja) * 1999-06-08 2011-02-16 シルトロニック・ジャパン株式会社 シリコン単結晶ウエーハおよびその製造方法

Also Published As

Publication number Publication date
EP1310583B1 (de) 2008-10-01
WO2002002852A1 (fr) 2002-01-10
EP1310583A1 (de) 2003-05-14
KR20030007898A (ko) 2003-01-23
US6893499B2 (en) 2005-05-17
KR100801672B1 (ko) 2008-02-11
US20030106484A1 (en) 2003-06-12
TW522456B (en) 2003-03-01
EP1310583A4 (de) 2006-08-30
JP3901092B2 (ja) 2007-04-04

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