[go: up one dir, main page]

ATE225568T1 - Leistung-mosfet aus siliziumkarbid - Google Patents

Leistung-mosfet aus siliziumkarbid

Info

Publication number
ATE225568T1
ATE225568T1 AT94900484T AT94900484T ATE225568T1 AT E225568 T1 ATE225568 T1 AT E225568T1 AT 94900484 T AT94900484 T AT 94900484T AT 94900484 T AT94900484 T AT 94900484T AT E225568 T1 ATE225568 T1 AT E225568T1
Authority
AT
Austria
Prior art keywords
region
drain
silicon carbide
conductivity type
source
Prior art date
Application number
AT94900484T
Other languages
English (en)
Inventor
John W Palmour
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE225568T1 publication Critical patent/ATE225568T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)
AT94900484T 1992-11-24 1993-10-27 Leistung-mosfet aus siliziumkarbid ATE225568T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/980,753 US5506421A (en) 1992-11-24 1992-11-24 Power MOSFET in silicon carbide
PCT/US1993/010490 WO1994013017A1 (en) 1992-11-24 1993-10-27 Power mosfet in silicon carbide

Publications (1)

Publication Number Publication Date
ATE225568T1 true ATE225568T1 (de) 2002-10-15

Family

ID=25527819

Family Applications (1)

Application Number Title Priority Date Filing Date
AT94900484T ATE225568T1 (de) 1992-11-24 1993-10-27 Leistung-mosfet aus siliziumkarbid

Country Status (8)

Country Link
US (1) US5506421A (de)
EP (1) EP0671056B1 (de)
JP (1) JPH08505492A (de)
KR (1) KR100271106B1 (de)
AT (1) ATE225568T1 (de)
AU (1) AU5545894A (de)
DE (1) DE69332358T2 (de)
WO (1) WO1994013017A1 (de)

Families Citing this family (169)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6344663B1 (en) 1992-06-05 2002-02-05 Cree, Inc. Silicon carbide CMOS devices
US5399515A (en) * 1993-07-12 1995-03-21 Motorola, Inc. Method of fabricating a silicon carbide vertical MOSFET and device
JP3334290B2 (ja) * 1993-11-12 2002-10-15 株式会社デンソー 半導体装置
DE69534888T2 (de) * 1994-04-06 2006-11-02 Denso Corp., Kariya Herstellungsverfahren für Halbleiterbauelement mit Graben
US5723376A (en) * 1994-06-23 1998-03-03 Nippondenso Co., Ltd. Method of manufacturing SiC semiconductor device having double oxide film formation to reduce film defects
DE4423068C1 (de) * 1994-07-01 1995-08-17 Daimler Benz Ag Feldeffekt-Transistoren aus SiC und Verfahren zu ihrer Herstellung
US5686737A (en) * 1994-09-16 1997-11-11 Cree Research, Inc. Self-aligned field-effect transistor for high frequency applications
EP0718893A3 (de) * 1994-11-25 1999-07-14 Fuji Electric Co., Ltd. MOS-gesteuerter Thyristor mit zwei Gates und Verfahren zur Herstellung desselben
JPH08204179A (ja) * 1995-01-26 1996-08-09 Fuji Electric Co Ltd 炭化ケイ素トレンチｍｏｓｆｅｔ
JPH08213607A (ja) * 1995-02-08 1996-08-20 Ngk Insulators Ltd 半導体装置およびその製造方法
US5661312A (en) * 1995-03-30 1997-08-26 Motorola Silicon carbide MOSFET
US6573534B1 (en) 1995-09-06 2003-06-03 Denso Corporation Silicon carbide semiconductor device
FR2738394B1 (fr) * 1995-09-06 1998-06-26 Nippon Denso Co Dispositif a semi-conducteur en carbure de silicium, et son procede de fabrication
US5877515A (en) * 1995-10-10 1999-03-02 International Rectifier Corporation SiC semiconductor device
US5972801A (en) * 1995-11-08 1999-10-26 Cree Research, Inc. Process for reducing defects in oxide layers on silicon carbide
US6133587A (en) * 1996-01-23 2000-10-17 Denso Corporation Silicon carbide semiconductor device and process for manufacturing same
JP3471509B2 (ja) * 1996-01-23 2003-12-02 株式会社デンソー 炭化珪素半導体装置
SE9601172D0 (sv) * 1996-03-27 1996-03-27 Abb Research Ltd Insulated gate bipolar transistor having a trench and a method for procuction thereof
US5612232A (en) * 1996-03-29 1997-03-18 Motorola Method of fabricating semiconductor devices and the devices
US5909039A (en) * 1996-04-24 1999-06-01 Abb Research Ltd. Insulated gate bipolar transistor having a trench
US5719409A (en) * 1996-06-06 1998-02-17 Cree Research, Inc. Silicon carbide metal-insulator semiconductor field effect transistor
US5952679A (en) * 1996-10-17 1999-09-14 Denso Corporation Semiconductor substrate and method for straightening warp of semiconductor substrate
US6180958B1 (en) 1997-02-07 2001-01-30 James Albert Cooper, Jr. Structure for increasing the maximum voltage of silicon carbide power transistors
DE69828588T2 (de) * 1997-02-07 2006-02-09 Cooper jun., James Albert, West Lafayette Struktur zur erhöhung der maximalen spannung von siliziumkarbid-leistungstransistoren
US6570185B1 (en) 1997-02-07 2003-05-27 Purdue Research Foundation Structure to reduce the on-resistance of power transistors
DE19705516C2 (de) * 1997-02-13 1999-01-07 Siemens Ag Halbleiter-Anordnung aus Siliziumcarbid und Verfahren zu ihrer Herstellung
US6057558A (en) * 1997-03-05 2000-05-02 Denson Corporation Silicon carbide semiconductor device and manufacturing method thereof
US7365369B2 (en) 1997-06-11 2008-04-29 Nichia Corporation Nitride semiconductor device
US6121633A (en) * 1997-06-12 2000-09-19 Cree Research, Inc. Latch-up free power MOS-bipolar transistor
US5969378A (en) * 1997-06-12 1999-10-19 Cree Research, Inc. Latch-up free power UMOS-bipolar transistor
US6054752A (en) * 1997-06-30 2000-04-25 Denso Corporation Semiconductor device
CN1267397A (zh) * 1997-08-20 2000-09-20 西门子公司 具有预定的α碳化硅区的半导体结构及此半导体结构的应用
US6011278A (en) * 1997-10-28 2000-01-04 Philips Electronics North America Corporation Lateral silicon carbide semiconductor device having a drift region with a varying doping level
US6479839B2 (en) 1997-11-18 2002-11-12 Technologies & Devices International, Inc. III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer
US20020047135A1 (en) * 1997-11-18 2002-04-25 Nikolaev Audrey E. P-N junction-based structures utilizing HVPE grown III-V compound layers
US6476420B2 (en) 1997-11-18 2002-11-05 Technologies And Devices International, Inc. P-N homojunction-based structures utilizing HVPE growth III-V compound layers
US6472300B2 (en) 1997-11-18 2002-10-29 Technologies And Devices International, Inc. Method for growing p-n homojunction-based structures utilizing HVPE techniques
US6555452B2 (en) 1997-11-18 2003-04-29 Technologies And Devices International, Inc. Method for growing p-type III-V compound material utilizing HVPE techniques
US6599133B2 (en) 1997-11-18 2003-07-29 Technologies And Devices International, Inc. Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques
US6890809B2 (en) * 1997-11-18 2005-05-10 Technologies And Deviles International, Inc. Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device
US6849862B2 (en) * 1997-11-18 2005-02-01 Technologies And Devices International, Inc. III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer
US6559038B2 (en) 1997-11-18 2003-05-06 Technologies And Devices International, Inc. Method for growing p-n heterojunction-based structures utilizing HVPE techniques
US6559467B2 (en) 1997-11-18 2003-05-06 Technologies And Devices International, Inc. P-n heterojunction-based structures utilizing HVPE grown III-V compound layers
JP4192281B2 (ja) 1997-11-28 2008-12-10 株式会社デンソー 炭化珪素半導体装置
JPH11251592A (ja) 1998-01-05 1999-09-17 Denso Corp 炭化珪素半導体装置
SE9800286D0 (sv) * 1998-02-02 1998-02-02 Abb Research Ltd A transistor of SiC
US6362495B1 (en) 1998-03-05 2002-03-26 Purdue Research Foundation Dual-metal-trench silicon carbide Schottky pinch rectifier
TW434648B (en) * 1998-04-23 2001-05-16 Int Rectifier Corp P-channel trench mosfet structure
US6083806A (en) * 1998-07-06 2000-07-04 Motorola, Inc. Method of forming an alignment mark
US6221700B1 (en) 1998-07-31 2001-04-24 Denso Corporation Method of manufacturing silicon carbide semiconductor device with high activation rate of impurities
US6246076B1 (en) 1998-08-28 2001-06-12 Cree, Inc. Layered dielectric on silicon carbide semiconductor structures
US6972436B2 (en) * 1998-08-28 2005-12-06 Cree, Inc. High voltage, high temperature capacitor and interconnection structures
JP3428459B2 (ja) * 1998-09-01 2003-07-22 富士電機株式会社 炭化けい素ｎチャネルＭＯＳ半導体素子およびその製造方法
US7462910B1 (en) 1998-10-14 2008-12-09 International Rectifier Corporation P-channel trench MOSFET structure
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
US6711191B1 (en) 1999-03-04 2004-03-23 Nichia Corporation Nitride semiconductor laser device
US6399506B2 (en) * 1999-04-07 2002-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Method for planarizing an oxide layer
US6368514B1 (en) 1999-09-01 2002-04-09 Luminous Intent, Inc. Method and apparatus for batch processed capacitors using masking techniques
US6420757B1 (en) 1999-09-14 2002-07-16 Vram Technologies, Llc Semiconductor diodes having low forward conduction voltage drop, low reverse current leakage, and high avalanche energy capability
CA2328628A1 (en) * 1999-12-21 2001-06-21 Cecile J. Schoenheider Moldable compositions
US6433370B1 (en) 2000-02-10 2002-08-13 Vram Technologies, Llc Method and apparatus for cylindrical semiconductor diodes
US6630746B1 (en) 2000-05-09 2003-10-07 Motorola, Inc. Semiconductor device and method of making the same
WO2001086726A1 (en) * 2000-05-10 2001-11-15 Koninklijke Philips Electronics N.V. A semiconductor device
US6429041B1 (en) 2000-07-13 2002-08-06 Cree, Inc. Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation
US6956238B2 (en) 2000-10-03 2005-10-18 Cree, Inc. Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel
US6767843B2 (en) 2000-10-03 2004-07-27 Cree, Inc. Method of N2O growth of an oxide layer on a silicon carbide layer
US6610366B2 (en) 2000-10-03 2003-08-26 Cree, Inc. Method of N2O annealing an oxide layer on a silicon carbide layer
US7067176B2 (en) 2000-10-03 2006-06-27 Cree, Inc. Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment
US6580150B1 (en) 2000-11-13 2003-06-17 Vram Technologies, Llc Vertical junction field effect semiconductor diodes
US6537921B2 (en) 2001-05-23 2003-03-25 Vram Technologies, Llc Vertical metal oxide silicon field effect semiconductor diodes
JPWO2003065459A1 (ja) * 2002-01-28 2005-05-26 三菱電機株式会社 半導体装置
US7022378B2 (en) * 2002-08-30 2006-04-04 Cree, Inc. Nitrogen passivation of interface states in SiO2/SiC structures
US7221010B2 (en) 2002-12-20 2007-05-22 Cree, Inc. Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
TW588460B (en) * 2003-01-24 2004-05-21 Ind Tech Res Inst Trench power MOSFET and method of making the same
JP3794637B2 (ja) 2003-03-07 2006-07-05 松下電器産業株式会社 固体撮像装置
US6958275B2 (en) * 2003-03-11 2005-10-25 Integrated Discrete Devices, Llc MOSFET power transistors and methods
US8133789B1 (en) 2003-04-11 2012-03-13 Purdue Research Foundation Short-channel silicon carbide power mosfet
US6979863B2 (en) * 2003-04-24 2005-12-27 Cree, Inc. Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same
US7074643B2 (en) * 2003-04-24 2006-07-11 Cree, Inc. Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same
US7015104B1 (en) 2003-05-29 2006-03-21 Third Dimension Semiconductor, Inc. Technique for forming the deep doped columns in superjunction
US6974720B2 (en) * 2003-10-16 2005-12-13 Cree, Inc. Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby
JP4928947B2 (ja) * 2003-12-19 2012-05-09 サード ディメンジョン （スリーディ） セミコンダクタ インコーポレイテッド 超接合デバイスの製造方法
US7023069B2 (en) * 2003-12-19 2006-04-04 Third Dimension (3D) Semiconductor, Inc. Method for forming thick dielectric regions using etched trenches
EP1701686A4 (de) * 2003-12-19 2009-07-01 Third Dimension 3D Sc Inc Verfahren zur herstellung einer superverbindungsvorrichtung mit herkömmlichen enden
US7199006B2 (en) * 2003-12-19 2007-04-03 Third Dimension (3D) Semiconductor, Inc. Planarization method of manufacturing a superjunction device
KR20070029655A (ko) * 2003-12-19 2007-03-14 써드 디멘존 세미컨덕터, 인코포레이티드 넓은 메사를 갖는 수퍼 접합 장치의 제조 방법
US7118970B2 (en) * 2004-06-22 2006-10-10 Cree, Inc. Methods of fabricating silicon carbide devices with hybrid well regions
AU2005333516B2 (en) * 2004-07-08 2011-04-21 Mississippi State University Monolithic vertical junction field effect transistor and Schottky barrier diode fabricated from silicon carbide and method for fabricating the same
TWI401749B (zh) * 2004-12-27 2013-07-11 Third Dimension 3D Sc Inc 用於高電壓超接面終止之方法
US7439583B2 (en) * 2004-12-27 2008-10-21 Third Dimension (3D) Semiconductor, Inc. Tungsten plug drain extension
US20060214268A1 (en) * 2005-03-25 2006-09-28 Shindengen Electric Manufacturing Co., Ltd. SiC semiconductor device
EP1872396A4 (de) * 2005-04-22 2009-09-23 Icemos Technology Corp Superübergangsbauelement mit oxidausgekleideten gräben und verfahren zur herstellung eines superübergangsbauelements mit oxidausgekleideten gräben
DE102005019157A1 (de) 2005-04-25 2006-10-26 Robert Bosch Gmbh Anordnung von MOSFETs zur Steuerung von demselben
US7391057B2 (en) * 2005-05-18 2008-06-24 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US7615801B2 (en) * 2005-05-18 2009-11-10 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US20060261346A1 (en) * 2005-05-18 2006-11-23 Sei-Hyung Ryu High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same
US7414268B2 (en) 2005-05-18 2008-08-19 Cree, Inc. High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities
US7528040B2 (en) 2005-05-24 2009-05-05 Cree, Inc. Methods of fabricating silicon carbide devices having smooth channels
US7446018B2 (en) * 2005-08-22 2008-11-04 Icemos Technology Corporation Bonded-wafer superjunction semiconductor device
US7727904B2 (en) * 2005-09-16 2010-06-01 Cree, Inc. Methods of forming SiC MOSFETs with high inversion layer mobility
WO2008005092A2 (en) 2006-06-29 2008-01-10 Cree, Inc. Silicon carbide switching devices including p-type channels and methods of forming the same
US7728402B2 (en) * 2006-08-01 2010-06-01 Cree, Inc. Semiconductor devices including schottky diodes with controlled breakdown
US8432012B2 (en) 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
KR101529331B1 (ko) 2006-08-17 2015-06-16 크리 인코포레이티드 고전력 절연 게이트 바이폴라 트랜지스터
JP2008078604A (ja) * 2006-08-24 2008-04-03 Rohm Co Ltd Ｍｉｓ型電界効果トランジスタおよびその製造方法
US7476932B2 (en) * 2006-09-29 2009-01-13 The Boeing Company U-shape metal-oxide-semiconductor (UMOS) gate structure for high power MOS-based semiconductor devices
US7598567B2 (en) 2006-11-03 2009-10-06 Cree, Inc. Power switching semiconductor devices including rectifying junction-shunts
US8835987B2 (en) 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
US7723172B2 (en) * 2007-04-23 2010-05-25 Icemos Technology Ltd. Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material
US8580651B2 (en) * 2007-04-23 2013-11-12 Icemos Technology Ltd. Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material
US20080272429A1 (en) * 2007-05-04 2008-11-06 Icemos Technology Corporation Superjunction devices having narrow surface layout of terminal structures and methods of manufacturing the devices
JP2009044035A (ja) * 2007-08-10 2009-02-26 Sanken Electric Co Ltd 電界効果半導体装置
US8012806B2 (en) * 2007-09-28 2011-09-06 Icemos Technology Ltd. Multi-directional trenching of a die in manufacturing superjunction devices
CN101447429B (zh) * 2007-11-27 2012-07-11 上海华虹Nec电子有限公司 双扩散场效应晶体管制造方法
US9048302B2 (en) * 2008-01-11 2015-06-02 The Furukawa Electric Co., Ltd Field effect transistor having semiconductor operating layer formed with an inclined side wall
US7846821B2 (en) * 2008-02-13 2010-12-07 Icemos Technology Ltd. Multi-angle rotation for ion implantation of trenches in superjunction devices
US8030133B2 (en) * 2008-03-28 2011-10-04 Icemos Technology Ltd. Method of fabricating a bonded wafer substrate for use in MEMS structures
US8035112B1 (en) 2008-04-23 2011-10-11 Purdue Research Foundation SIC power DMOSFET with self-aligned source contact
TWI362769B (en) * 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
US7800196B2 (en) * 2008-09-30 2010-09-21 Northrop Grumman Systems Corporation Semiconductor structure with an electric field stop layer for improved edge termination capability
US8288220B2 (en) 2009-03-27 2012-10-16 Cree, Inc. Methods of forming semiconductor devices including epitaxial layers and related structures
US8294507B2 (en) 2009-05-08 2012-10-23 Cree, Inc. Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
US8629509B2 (en) * 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
US8193848B2 (en) 2009-06-02 2012-06-05 Cree, Inc. Power switching devices having controllable surge current capabilities
US8541787B2 (en) * 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
US8314462B2 (en) * 2009-07-28 2012-11-20 Cree, Inc. Semiconductor devices including electrodes with integrated resistances
US20110147764A1 (en) 2009-08-27 2011-06-23 Cree, Inc. Transistors with a dielectric channel depletion layer and related fabrication methods
US8841682B2 (en) 2009-08-27 2014-09-23 Cree, Inc. Transistors with a gate insulation layer having a channel depleting interfacial charge and related fabrication methods
US8354690B2 (en) 2009-08-31 2013-01-15 Cree, Inc. Solid-state pinch off thyristor circuits
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US8415671B2 (en) 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
JP5611653B2 (ja) 2010-05-06 2014-10-22 株式会社東芝 窒化物半導体素子
US8436367B1 (en) 2010-08-02 2013-05-07 Microsemi Corporation SiC power vertical DMOS with increased safe operating area
US8674439B2 (en) 2010-08-02 2014-03-18 Microsemi Corporation Low loss SiC MOSFET
JP5707770B2 (ja) * 2010-08-03 2015-04-30 住友電気工業株式会社 半導体装置およびその製造方法
EP2482315B1 (de) * 2010-10-29 2015-08-12 Panasonic Intellectual Property Management Co., Ltd. Halbleiterbauelement
JP5637916B2 (ja) * 2011-03-31 2014-12-10 トヨタ自動車株式会社 半導体装置及びその製造方法
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9984894B2 (en) 2011-08-03 2018-05-29 Cree, Inc. Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
JP2014531752A (ja) 2011-09-11 2014-11-27 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． 改善したレイアウトを有するトランジスタを備える高電流密度電力モジュール
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
JP5745997B2 (ja) * 2011-10-31 2015-07-08 トヨタ自動車株式会社 スイッチング素子とその製造方法
JP5852863B2 (ja) * 2011-11-28 2016-02-03 株式会社日立製作所 ４ｈ−ＳｉＣ半導体素子及び半導体装置
US9343383B2 (en) * 2012-03-02 2016-05-17 Cree, Inc. High voltage semiconductor devices including electric arc suppression material and methods of forming the same
US8946814B2 (en) 2012-04-05 2015-02-03 Icemos Technology Ltd. Superjunction devices having narrow surface layout of terminal structures, buried contact regions and trench gates
JP2013243179A (ja) * 2012-05-18 2013-12-05 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
JP2013243180A (ja) * 2012-05-18 2013-12-05 Sumitomo Electric Ind Ltd 炭化珪素半導体装置およびその製造方法
US8901639B2 (en) 2012-07-26 2014-12-02 Cree, Inc. Monolithic bidirectional silicon carbide switching devices
TWI520337B (zh) 2012-12-19 2016-02-01 財團法人工業技術研究院 階梯溝渠式金氧半場效電晶體及其製造方法
TWI469341B (zh) * 2012-12-20 2015-01-11 Ind Tech Res Inst 碳化矽溝槽式蕭基能障元件
US9240476B2 (en) 2013-03-13 2016-01-19 Cree, Inc. Field effect transistor devices with buried well regions and epitaxial layers
US9306061B2 (en) 2013-03-13 2016-04-05 Cree, Inc. Field effect transistor devices with protective regions
WO2014204491A1 (en) 2013-06-21 2014-12-24 Microsemi Corporation Low loss sic mosfet
US9748341B2 (en) * 2013-07-02 2017-08-29 General Electric Company Metal-oxide-semiconductor (MOS) devices with increased channel periphery
US9893176B2 (en) 2014-12-26 2018-02-13 Fairchild Semiconductor Corporation Silicon-carbide trench gate MOSFETs
CN107251233B (zh) * 2015-09-16 2021-04-06 富士电机株式会社 半导体装置
CN116705861A (zh) * 2016-09-09 2023-09-05 美国联合碳化硅公司 具有改进的阈值电压控制的沟槽垂直jfet
US11031503B2 (en) * 2016-09-27 2021-06-08 Intel Corporation Non-planar gate thin film transistor
KR101875638B1 (ko) * 2016-10-14 2018-07-06 현대자동차 주식회사 반도체 소자 및 그 제조 방법
US10615292B2 (en) * 2018-03-27 2020-04-07 Hong Kong Applied Science And Technology Research Institute Co., Ltd. High voltage silicon carbide Schottky diode flip chip array
US11158703B2 (en) * 2019-06-05 2021-10-26 Microchip Technology Inc. Space efficient high-voltage termination and process for fabricating same
WO2021210600A1 (ja) * 2020-04-17 2021-10-21 三菱電機株式会社 電力用半導体装置、電力用半導体装置の製造方法および電力変換装置
US12034033B2 (en) 2022-01-25 2024-07-09 Ge Aviation Systems Llc Semiconductor device package and method of forming

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3844029A (en) * 1972-02-02 1974-10-29 Trw Inc High power double-slug diode package
US4219835A (en) * 1978-02-17 1980-08-26 Siliconix, Inc. VMOS Mesa structure and manufacturing process
US4705759B1 (en) * 1978-10-13 1995-02-14 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
US5191396B1 (en) * 1978-10-13 1995-12-26 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
JPS58106870A (ja) * 1981-12-18 1983-06-25 Nissan Motor Co Ltd パワ−ｍｏｓｆｅｔ
US4974059A (en) * 1982-12-21 1990-11-27 International Rectifier Corporation Semiconductor high-power mosfet device
JPS59231862A (ja) * 1983-06-13 1984-12-26 Nissan Motor Co Ltd 縦型ｍｏｓトランジスタ
US4762806A (en) * 1983-12-23 1988-08-09 Sharp Kabushiki Kaisha Process for producing a SiC semiconductor device
EP0159663A3 (de) * 1984-04-26 1987-09-23 General Electric Company Thyristoren, Feldeffekttransistoren mit isoliertem Gate und MOSFETs hoher Dichte gesteuert durch eine in einer V-Nut angebrachte MOS-Struktur und Verfahren zur Herstellung
JPS6161441A (ja) * 1984-09-03 1986-03-29 Toshiba Corp 半導体装置の製造方法
JP2615390B2 (ja) * 1985-10-07 1997-05-28 工業技術院長 炭化シリコン電界効果トランジスタの製造方法
US4767722A (en) * 1986-03-24 1988-08-30 Siliconix Incorporated Method for making planar vertical channel DMOS structures
EP0279403A3 (de) * 1987-02-16 1988-12-07 Nec Corporation Vertikaler MOS-Feldeffekttransistor mit hoher Spannungsfestigkeit und hoher Schaltgeschwindigkeit
US4977439A (en) * 1987-04-03 1990-12-11 Esquivel Agerico L Buried multilevel interconnect system
US4945394A (en) * 1987-10-26 1990-07-31 North Carolina State University Bipolar junction transistor on silicon carbide
US4865685A (en) * 1987-11-03 1989-09-12 North Carolina State University Dry etching of silicon carbide
US4947218A (en) * 1987-11-03 1990-08-07 North Carolina State University P-N junction diodes in silicon carbide
JP2500807B2 (ja) * 1988-03-04 1996-05-29 日産自動車株式会社 縦型パワ―ｍｏｓトランジスタ
US4967245A (en) * 1988-03-14 1990-10-30 Siliconix Incorporated Trench power MOSFET device
JPH0777262B2 (ja) * 1988-04-19 1995-08-16 日本電気株式会社 縦型電界効果トランジスタ
JPH01290266A (ja) * 1988-05-18 1989-11-22 Fujitsu Ltd 化合物半導体素子
JPH0783119B2 (ja) * 1988-08-25 1995-09-06 日本電気株式会社 電界効果トランジスタ
US4994871A (en) * 1988-12-02 1991-02-19 General Electric Company Insulated gate bipolar transistor with improved latch-up current level and safe operating area
US5164218A (en) * 1989-05-12 1992-11-17 Nippon Soken, Inc. Semiconductor device and a method for producing the same
JPH0334573A (ja) * 1989-06-30 1991-02-14 Sharp Corp 炭化珪素電界効果トランジスタ
US4931408A (en) * 1989-10-13 1990-06-05 Siliconix Incorporated Method of fabricating a short-channel low voltage DMOS transistor
JP2542448B2 (ja) * 1990-05-24 1996-10-09 シャープ株式会社 電界効果トランジスタおよびその製造方法
JP2917532B2 (ja) * 1991-01-24 1999-07-12 富士電機株式会社 電界効果トランジスタ
US5168331A (en) * 1991-01-31 1992-12-01 Siliconix Incorporated Power metal-oxide-semiconductor field effect transistor
US5225032A (en) * 1991-08-09 1993-07-06 Allied-Signal Inc. Method of producing stoichiometric, epitaxial, monocrystalline films of silicon carbide at temperatures below 900 degrees centigrade
US5233215A (en) * 1992-06-08 1993-08-03 North Carolina State University At Raleigh Silicon carbide power MOSFET with floating field ring and floating field plate

Also Published As

Publication number Publication date
AU5545894A (en) 1994-06-22
EP0671056A1 (de) 1995-09-13
US5506421A (en) 1996-04-09
DE69332358D1 (de) 2002-11-07
KR950704815A (ko) 1995-11-20
JPH08505492A (ja) 1996-06-11
DE69332358T2 (de) 2003-07-31
KR100271106B1 (ko) 2000-11-01
WO1994013017A1 (en) 1994-06-09
EP0671056B1 (de) 2002-10-02

Similar Documents

Publication Publication Date Title
ATE225568T1 (de) Leistung-mosfet aus siliziumkarbid
TW335513B (en) Semiconductor component for high voltage
DE60045692D1 (de) Bipolare mosfet-anordnung
ATE515802T1 (de) Lateraler leistungs-mosfet
GB0107408D0 (en) Field effect transistor structure and method of manufacture
WO2003100865A3 (en) Microwave field effect transistor structure
EP0335750A3 (de) Vertikaler Leistungs-MOSFET mit hoher Durchbruchspannung und hoher Umschaltungsgeschwindigkeit
CA2336933A1 (en) Silicon carbide horizontal channel buffered gate semiconductor devices
EP0671769A3 (de) Feldeffekttransistor mit isolierter Steuerelektrode
WO2000030182A3 (en) Offset drain fermi-threshold field effect transistors
DE69828588D1 (de) Struktur zur erhöhung der maximalen spannung von siliziumkarbid-leistungstransistoren
KR960036128A (ko) 실리콘 탄화물 금속 산화물 반도체 전계효과 트랜지스터
CA2054498A1 (en) Mis transistor
WO2002078090A3 (en) Field-effect transistor structure and method of manufacture
KR890004444A (ko) Mos트랜지스터
DE60045708D1 (de) Bipolarer transistor
TW200505030A (en) MOS type semi conductor device
DE69841384D1 (de) Leistungshalbleiteranordnung mit halbisolierendem Substrat
EP0709897A4 (de) Halbleiteranordnung
ATE371955T1 (de) Igbt mit pn-isolation
GB1390135A (en) Insulated gate semiconductor device
MY107193A (en) Semiconductor device having improved insulated gate type transistor.
EP0239250A3 (de) MOS-Transistor mit kurzer Kanallänge
TW328609B (en) Field effect transistor with reduced delay variation
EP0948041A3 (de) Transistor mit isoliertem Gate, Verfahren zu dessen Herstellung und Vorrichtung auf der Basis einer Integrierten Halbleiterschaltung

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties