DE60045708D1 - Bipolarer transistor - Google Patents
Bipolarer transistorInfo
- Publication number
- DE60045708D1 DE60045708D1 DE60045708T DE60045708T DE60045708D1 DE 60045708 D1 DE60045708 D1 DE 60045708D1 DE 60045708 T DE60045708 T DE 60045708T DE 60045708 T DE60045708 T DE 60045708T DE 60045708 D1 DE60045708 D1 DE 60045708D1
- Authority
- DE
- Germany
- Prior art keywords
- bipolar transistor
- layer
- sic
- semi
- energy gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/80—Heterojunction BJTs
- H10D10/821—Vertical heterojunction BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
Landscapes
- Bipolar Transistors (AREA)
- Amplifiers (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9901410A SE9901410D0 (sv) | 1999-04-21 | 1999-04-21 | Abipolar transistor |
| PCT/SE2000/000698 WO2000065636A2 (en) | 1999-04-21 | 2000-04-12 | A bipolar transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE60045708D1 true DE60045708D1 (de) | 2011-04-21 |
Family
ID=20415286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60045708T Expired - Lifetime DE60045708D1 (de) | 1999-04-21 | 2000-04-12 | Bipolarer transistor |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6313488B1 (de) |
| EP (1) | EP1186049B1 (de) |
| JP (1) | JP4959872B2 (de) |
| AT (1) | ATE501526T1 (de) |
| DE (1) | DE60045708D1 (de) |
| SE (1) | SE9901410D0 (de) |
| WO (1) | WO2000065636A2 (de) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001332565A (ja) * | 2000-05-25 | 2001-11-30 | Nec Corp | 負性微分抵抗素子およびその製造方法 |
| US7132701B1 (en) * | 2001-07-27 | 2006-11-07 | Fairchild Semiconductor Corporation | Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods |
| US6870204B2 (en) * | 2001-11-21 | 2005-03-22 | Astralux, Inc. | Heterojunction bipolar transistor containing at least one silicon carbide layer |
| JP2004200391A (ja) * | 2002-12-18 | 2004-07-15 | Hitachi Ltd | 半導体装置 |
| US7804106B2 (en) * | 2003-01-06 | 2010-09-28 | Nippon Telegraph And Telephone Corporation | P-type nitride semiconductor structure and bipolar transistor |
| JP2004247545A (ja) * | 2003-02-14 | 2004-09-02 | Nissan Motor Co Ltd | 半導体装置及びその製造方法 |
| JP4777699B2 (ja) * | 2005-06-13 | 2011-09-21 | 本田技研工業株式会社 | バイポーラ型半導体装置およびその製造方法 |
| US7868335B1 (en) * | 2008-08-18 | 2011-01-11 | Hrl Laboratories, Llc | Modulation doped super-lattice sub-collector for high-performance HBTs and BJTs |
| US9742385B2 (en) | 2013-06-24 | 2017-08-22 | Ideal Power, Inc. | Bidirectional semiconductor switch with passive turnoff |
| US9799731B2 (en) | 2013-06-24 | 2017-10-24 | Ideal Power, Inc. | Multi-level inverters using sequenced drive of double-base bidirectional bipolar transistors |
| KR102234175B1 (ko) | 2013-06-24 | 2021-04-01 | 아이디얼 파워 인크. | 양방향 양극성 트랜지스터를 갖는 시스템, 회로, 디바이스 및 방법 |
| US9236458B2 (en) * | 2013-07-11 | 2016-01-12 | Infineon Technologies Ag | Bipolar transistor and a method for manufacturing a bipolar transistor |
| US9355853B2 (en) | 2013-12-11 | 2016-05-31 | Ideal Power Inc. | Systems and methods for bidirectional device fabrication |
| US11637016B2 (en) | 2013-12-11 | 2023-04-25 | Ideal Power Inc. | Systems and methods for bidirectional device fabrication |
| US9444449B2 (en) | 2014-11-06 | 2016-09-13 | Ideal Power Inc. | Circuits, methods, and systems with optimized operation of double-base bipolar junction transistors |
| CN105977287B (zh) * | 2016-07-25 | 2018-11-09 | 电子科技大学 | 一种碳化硅双极结型晶体管 |
| CN111081543A (zh) * | 2019-12-26 | 2020-04-28 | 深圳第三代半导体研究院 | 一种基于二维材料/氮化镓的双极型三极管及其制备方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4945394A (en) * | 1987-10-26 | 1990-07-31 | North Carolina State University | Bipolar junction transistor on silicon carbide |
| US5319220A (en) * | 1988-01-20 | 1994-06-07 | Sharp Kabushiki Kaisha | Silicon carbide semiconductor device |
| US4985742A (en) * | 1989-07-07 | 1991-01-15 | University Of Colorado Foundation, Inc. | High temperature semiconductor devices having at least one gallium nitride layer |
| CA2092215A1 (en) | 1992-03-24 | 1993-09-25 | Shinichi Shikata | Semiconductor device |
| JP3339508B2 (ja) * | 1992-03-24 | 2002-10-28 | 住友電気工業株式会社 | 半導体装置 |
| US5847414A (en) * | 1995-10-30 | 1998-12-08 | Abb Research Limited | Semiconductor device having a hetero-junction between SiC and a Group 3B-nitride |
| US5641975A (en) | 1995-11-09 | 1997-06-24 | Northrop Grumman Corporation | Aluminum gallium nitride based heterojunction bipolar transistor |
| US5910665A (en) * | 1995-12-29 | 1999-06-08 | Texas Instruments Incorporated | Low capacitance power VFET method and device |
| SE9600199D0 (sv) * | 1996-01-19 | 1996-01-19 | Abb Research Ltd | A semiconductor device with a low resistance ohmic contact between a metal layer and a SiC-layer |
| SE9601176D0 (sv) * | 1996-03-27 | 1996-03-27 | Abb Research Ltd | A method for producing a semiconductor device having semiconductor layers of SiC by the use of an implanting step and a device produced thereby |
| US6011279A (en) * | 1997-04-30 | 2000-01-04 | Cree Research, Inc. | Silicon carbide field controlled bipolar switch |
-
1999
- 1999-04-21 SE SE9901410A patent/SE9901410D0/xx unknown
- 1999-06-15 US US09/333,296 patent/US6313488B1/en not_active Expired - Lifetime
-
2000
- 2000-04-12 WO PCT/SE2000/000698 patent/WO2000065636A2/en active Application Filing
- 2000-04-12 AT AT00928024T patent/ATE501526T1/de not_active IP Right Cessation
- 2000-04-12 JP JP2000614486A patent/JP4959872B2/ja not_active Expired - Lifetime
- 2000-04-12 EP EP00928024A patent/EP1186049B1/de not_active Expired - Lifetime
- 2000-04-12 DE DE60045708T patent/DE60045708D1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1186049A2 (de) | 2002-03-13 |
| EP1186049B1 (de) | 2011-03-09 |
| JP2002543585A (ja) | 2002-12-17 |
| WO2000065636A8 (en) | 2001-07-12 |
| JP4959872B2 (ja) | 2012-06-27 |
| WO2000065636A3 (en) | 2001-01-25 |
| SE9901410D0 (sv) | 1999-04-21 |
| US6313488B1 (en) | 2001-11-06 |
| ATE501526T1 (de) | 2011-03-15 |
| WO2000065636A2 (en) | 2000-11-02 |
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