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SN74LS07
SDLS021D – MAY 1990 – REVISED APRIL 2016

SN74LS07 Hex Buffers and Drivers With Open-Collector High-Voltage Outputs

1 Features 3 Description
•
1 Convert TTL Voltage Levels to MOS Levels These hex buffers and drivers feature high-voltage
open-collector outputs to interface with high-level
• High Sink-Current Capability circuits or for driving high-current loads. They are
• Input Clamping Diodes Simplify also characterized for use as buffers for driving TTL
System Design inputs. The SN74LS07 devices have a rated output
• Open-Collector Driver for Indicator Lamps voltage of 30 V. The maximum sink current is 40 mA.
and Relays These circuits are compatible with most TTL families.
Inputs are diode-clamped to minimize transmission-
2 Applications line effects, which simplifies design. Typical power
• AV Receivers dissipation is 140 mW, and average propagation
delay time is 12 ns.
• Audio Docks: Portable
• Blu-ray Players and Home Theaters Device Information(1)
• MP3 Players or Recorders PART NUMBER PACKAGE (PINS) BODY SIZE (NOM)
• Personal Digital Assistants (PDA) SN74LS07D SOIC (14) 8.65 mm × 3.90 mm

• Power: Telecom/Server AC/DC Supply: Single SN74LS07DB SSOP (14) 6.20 mm × 5.30 mm
Controller: Analog and Digital SN74LS07N PDIP (14) 19.30 mm × 6.35 mm

• Solid-State Drives (SSD): Client and Enterprise SN74LS07NS SO (14) 10.30 mm × 5.30 mm

• TVs: LCD, Digital, and High-Definition (HDTV) (1) For all available packages, see the orderable addendum at
the end of the data sheet.
• Tablets: Enterprise
• Video Analytics: Server
• Wireless Headsets, Keyboards, and Mice
Logic Diagram (Positive Logic)

A Y

Copyright © 2016 Texas Instruments Incorporated

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
SN74LS07
SDLS021D – MAY 1990 – REVISED APRIL 2016 www.ti.com

Table of Contents
1 Features .................................................................. 1 8.3 Feature Description................................................... 7
2 Applications ........................................................... 1 8.4 Device Functional Modes.......................................... 7
3 Description ............................................................. 1 9 Application and Implementation .......................... 8
4 Revision History..................................................... 2 9.1 Application Information.............................................. 8
9.2 Typical Application .................................................... 8
5 Pin Configuration and Functions ......................... 3
6 Specifications......................................................... 4 10 Power Supply Recommendations ....................... 9
6.1 Absolute Maximum Ratings ...................................... 4 11 Layout................................................................... 10
6.2 ESD Ratings.............................................................. 4 11.1 Layout Guidelines ................................................. 10
6.3 Recommended Operating Conditions....................... 4 11.2 Layout Example .................................................... 10
6.4 Thermal Information .................................................. 4 12 Device and Documentation Support ................. 11
6.5 Electrical Characteristics........................................... 5 12.1 Documentation Support ........................................ 11
6.6 Switching Characteristics .......................................... 5 12.2 Community Resource............................................ 11
6.7 Typical Characteristics .............................................. 5 12.3 Trademarks ........................................................... 11
7 Parameter Measurement Information .................. 6 12.4 Electrostatic Discharge Caution ............................ 11
12.5 Glossary ................................................................ 11
8 Detailed Description .............................................. 7
8.1 Overview ................................................................... 7 13 Mechanical, Packaging, and Orderable
8.2 Functional Block Diagram ......................................... 7
Information ........................................................... 11

4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision C (February 2004) to Revision D Page

• Added Device Information table, ESD Ratings table, Feature Description section, Device Functional Modes,
Application and Implementation section, Power Supply Recommendations section, Layout section, Device and
Documentation Support section, and Mechanical, Packaging, and Orderable Information section ..................................... 1
• Deleted SN54LS07 and SN74LS17 from the data sheet because they are obsolete and no longer supplied ...................... 1
• Deleted Ordering Information table. ....................................................................................................................................... 1

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5 Pin Configuration and Functions

D, DB, N, or NS Packages
14-Pin SOIC, SSOP, PDIP, SO
Top View

1A 1 14 V  
CC

1Y 2 13 6A

2A 3 12 6Y

2Y 4 11 5A

3A 5 10 5Y

3Y 6 9 4A

GND 7 8 4Y

Pin Functions
PIN
I/O DESCRIPTION
NO. NAME
1 1A I Input 1
2 1Y O Output 1
3 2A I Input 2
4 2Y O Output 2
5 3A I Input 3
6 3Y O Output 3
7 GND — Ground pin
8 4Y O Output 4
9 4A I Input 4
10 5Y O Output 5
11 5A I Input 5
12 6Y O Output 6
13 6A I Input 6
14 VCC — Power pin

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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VCC Supply voltage 7 V
(2)
VI Input voltage 7 V
VO Output voltage (2) (3) 30 V
TJ Operating virtual junction temperature 150 °C
Tstg Storage temperature –65 150 °C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to GND.
(3) This is the maximum voltage that should be applied to any output when it is in the off state.

6.2 ESD Ratings

VALUE UNIT
Electrostatic Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000
V(ESD) V
discharge Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) ±1000

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted) (1)
MIN NOM MAX UNIT
VCC Supply voltage 4.75 5 5.25 V
VIH High-level input voltage 2 V
VIL Low-level input voltage 0.8 V
VOH High-level output voltage 30 V
IOL Low-level output current 40 mA
TA Operating free-air temperature 0 70 °C

(1) All unused inputs of the device must be held at VCC or GND to ensure proper device operation. See the TI application report,
Implications of Slow or Floating CMOS Inputs, SCBA004.

6.4 Thermal Information

SN74LS07
(1) D DB N NS
THERMAL METRIC UNIT
(SOIC) (SSOP) (PDIP) (SO)
14 PINS 14 PINS 14 PINS 14 PINS
RθJA Junction-to-ambient thermal resistance 85.2 97.4 50.2 82.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 43.5 49.8 37.5 40.9 °C/W
RθJB Junction-to-board thermal resistance 39.7 44.5 30 41.4 °C/W
ψJT Junction-to-top characterization parameter 10.9 16.5 22.3 12.4 °C/W
ψJB Junction-to-board characterization parameter 39.4 44 29.9 41.1 °C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.

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6.5 Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS (1) MIN TYP MAX UNIT
VIK VCC = MIN, II = –12 mA –1.5 V
IOH VCC = MIN, VIH = 2 V VOH = 30 V 0.25 mA
IOL = 16 mA 0.4
VOL VCC = MIN, VIL = 0.8 V V
IOL = MAX (2) 0.7
II VCC = MAX, VI = 7 V 1 mA
IIH VCC = MAX, VI = 2.4 V 20 µA
IIL VCC = MAX, VI = 0.4 V –0.2 mA
ICCH VCC = MAX 14 mA
ICCL VCC = MAX 45 mA

(1) For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions.
(2) IOL = 40 mA

6.6 Switching Characteristics

VCC = 5 V, TA = 25°C (see Figure 2)
FROM TO
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
(INPUT) (OUTPUT)
tPLH 6 10
A Y RL = 110 Ω, CL = 15 pF ns
tPHL 19 30

6.7 Typical Characteristics

10

7
tPLH (ns)

1
0 10 20 30 40 50 60 70
Temperature (ƒC) C003

Figure 1. tPLH vs. Temperature

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7 Parameter Measurement Information

VCC
Test RL
Test Point S1
Point VCC
From Output
VCC Under Test (see Note B)
RL CL
From Output RL (see Note A) 5 kΩ
Under Test (see Note B) From Output Test
CL Under Test Point
(see Note A) CL
(see Note A) S2

LOAD CIRCUIT LOAD CIRCUIT LOAD CIRCUIT

FOR 2-STATE TOTEM-POLE OUTPUTS FOR OPEN-COLLECTOR OUTPUTS FOR 3-STATE OUTPUTS

3V
High-Level Timing
Pulse 1.3 V 1.3 V Input 1.3 V
0V
tw th
tsu
3V
Low-Level 1.3 V 1.3 V Data
1.3 V 1.3 V
Pulse Input
0V
VOLTAGE WAVEFORMS VOLTAGE WAVEFORMS
PULSE DURATIONS SETUP AND HOLD TIMES

Output 3V
Control
(low-level 1.3 V 1.3 V
3V
Input enabling)
1.3 V 1.3 V 0V
0V tPZL tPLZ

tPLH tPHL
Waveform 1 ≈1.5 V
In-Phase VOH 1.3 V
(see Notes C
Output 1.3 V 1.3 V VOL + 0.5 V
and D)
(see Note D) VOL VOL
tPZH tPHZ
tPHL tPLH
VOH
Out-of-Phase Waveform 2 VOH − 0.5 V
VOH
Output (see Notes C 1.3 V
1.3 V 1.3 V ≈1.5 V
(see Note D) and D)
VOL
VOLTAGE WAVEFORMS VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES ENABLE AND DISABLE TIMES, 3-STATE OUTPUTS
A. CL includes probe and jig capacitance.
B. All diodes are 1N3064 or equivalent.
C. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output
control.
Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output
control.
D. S1 and S2 are closed for tPLH, tPHL, tPHZ, and tPLZ; S1 is open and S2 is closed for tPZH; S1 is closed and S2 is open
for tPZL.
E. Phase relationships between inputs and outputs have been chosen arbitrarily for these examples.
F. All input pulses are supplied by generators having the following characteristics: PRR ≤ 1 MHz, ZO ≈ 50 Ω, tr ≤ 1.5 ns,
tf ≤ 2.6 ns.
G. The outputs are measured one at a time, with one input transition per measurement.

Figure 2. Load Circuits and Voltage Waveforms

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8 Detailed Description

8.1 Overview
The outputs of the SN74LS07 device are open-collector and can be connected to other open-collector outputs to
implement active-low wired-OR or active-high wired-AND functions. The maximum sink current for the SN74LS07
is 40 mA.
Inputs can be driven from 2.5-V, 3.3-V (LVTTL), or 5-V (CMOS) devices. This feature allows the use of this
device as translators in a mixed-system environment.
VCC

9 kΩ 1 kΩ
5 kΩ

Output
Input

2 kΩ

2 kΩ

GND

Copyright © 2016, Texas Instruments Incorporated

Resistor values shown are nominal.

Figure 3. Schematic (Gate)

8.2 Functional Block Diagram

A Y

Copyright © 2016 Texas Instruments Incorporated

8.3 Feature Description

• Allows for up translation
– Inputs accept voltages to 5.25 V
– Outputs accept voltages to 30 V
• High Sink-Current Capability
– Up to 40 mA

8.4 Device Functional Modes

Table 1 lists the functions of this device.

Table 1. Function Table

INPUT A OUTPUT Y
H Hi-Z
L L

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9 Application and Implementation

NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.

9.1 Application Information

The SN74LS07 device is a high-drive, open-drain CMOS device that can be used for a multitude of buffer-type
functions. It can produce 40 mA of drive current at 5 V. Therefore, this device is ideal for driving multiple inputs.
The inputs are 5.25-V tolerant and outputs are 30-V tolerant.

9.2 Typical Application

Multiple channels of the SN74LS07 device can be used to create a positive AND logic function, as shown in
Figure 4. Additionally, the SN74LS07 device can be used to drive an LED by sinking up to 40 mA, which may be
more than the previous stage can sink.

SN74LS07 SN74LS07

SN74LS07

Copyright © 2016, Texas Instruments Incorporated

Figure 4. Typical Application Diagram

9.2.1 Design Requirements

Ensure that the inputs are in a known state as defined by VIH and VIL noted in Recommended Operating
Conditions, or else the outputs may be in an unknown state.

9.2.2 Detailed Design Procedure

1. Recommended Input Conditions
– For specified high and low level, see VIH and VIL in Recommended Operating Conditions.
– Inputs are overvoltage tolerant allowing them to go as high as 5.25 V.
2. Recommend Output Conditions
– Load currents must not exceed 40 mA per output.
– Outputs must not be pulled above 30 V.
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Typical Application (continued)

9.2.3 Application Curve

15
14.8
14.6
14.4
14.2

tPHL (ns)
14
13.8
13.6
13.4
13.2
13
0 10 20 30 40 50 60 70
Temperature (ƒC) C004

Figure 5. tPHL vs Temperature

10 Power Supply Recommendations

The power supply can be any voltage between the minimum and maximum supply voltage rating indicated in
Recommended Operating Conditions.
Each VCC pin must have a good bypass capacitor to prevent power disturbance. For devices with a single supply,
TI recommends a 0.1-µF capacitor; if there are multiple VCC pins, then TI recommends either a 0.01-µF or
0.022-µF capacitor for each power pin. It is acceptable to parallel multiple bypass capacitors to reject different
frequencies of noise. A 0.1-µF and a 1-µF capacitor are commonly used in parallel. The bypass capacitor must
be installed as close to the power pin as possible for best results.

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11 Layout

11.1 Layout Guidelines

When using multiple bit logic devices, inputs must never float.
In many cases, functions or parts of functions of digital logic devices are unused, for example, when only two
inputs of a triple-input AND gate are used or only 3 of the 4 buffer gates are used. Such input pins must not be
left unconnected because the undefined voltages at the outside connections result in undefined operational
states. Figure 6 specifies the rules that must be observed under all circumstances. All unused inputs of digital
logic devices must be connected to a high or low bias to prevent them from floating. The logic level that must be
applied to any particular unused input depends on the function of the device. Generally they are tied to GND or
VCC, whichever makes more sense or is more convenient. It is generally acceptable to float outputs, unless the
part is a transceiver.

11.2 Layout Example

Vcc
Input

Unused Input Output Output

Unused Input

Input

Figure 6. Layout Diagram

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12 Device and Documentation Support

12.1 Documentation Support

12.1.1 Related Documentation

For related documentation see the followign:
Implications of Slow or Floating CMOS Inputs, SCBA004

12.2 Community Resource

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.

12.3 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.

12.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.

13 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

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 PACKAGE OPTION ADDENDUM

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PACKAGING INFORMATION

Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) (6) (3) (4/5)

SN74LS07D ACTIVE SOIC D 14 50 Green (RoHS CU NIPDAU Level-1-260C-UNLIM 0 to 70 LS07

& no Sb/Br)
SN74LS07DBR ACTIVE SSOP DB 14 2000 Green (RoHS CU NIPDAU Level-1-260C-UNLIM 0 to 70 LS07
& no Sb/Br)
SN74LS07DBRG4 ACTIVE SSOP DB 14 2000 Green (RoHS CU NIPDAU Level-1-260C-UNLIM 0 to 70 LS07
& no Sb/Br)
SN74LS07DR ACTIVE SOIC D 14 2500 Green (RoHS CU NIPDAU Level-1-260C-UNLIM 0 to 70 LS07
& no Sb/Br)
SN74LS07DRE4 ACTIVE SOIC D 14 2500 Green (RoHS CU NIPDAU Level-1-260C-UNLIM 0 to 70 LS07
& no Sb/Br)
SN74LS07N ACTIVE PDIP N 14 25 Green (RoHS CU NIPDAU N / A for Pkg Type 0 to 70 SN74LS07N
& no Sb/Br)
SN74LS07NSR ACTIVE SO NS 14 2000 Green (RoHS CU NIPDAU Level-1-260C-UNLIM 0 to 70 74LS07
& no Sb/Br)
SN74LS07NSRG4 ACTIVE SO NS 14 2000 Green (RoHS CU NIPDAU Level-1-260C-UNLIM 0 to 70 74LS07
& no Sb/Br)

(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.

(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

Addendum-Page 1
 PACKAGE OPTION ADDENDUM

www.ti.com 24-Aug-2018

(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.

(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 2
 PACKAGE MATERIALS INFORMATION

www.ti.com 20-Dec-2018

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1
Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
SN74LS07DR SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1

Pack Materials-Page 1
 PACKAGE MATERIALS INFORMATION

www.ti.com 20-Dec-2018

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
SN74LS07DR SOIC D 14 2500 367.0 367.0 38.0

Pack Materials-Page 2
 MECHANICAL DATA

MSSO002E – JANUARY 1995 – REVISED DECEMBER 2001

DB (R-PDSO-G**) PLASTIC SMALL-OUTLINE

28 PINS SHOWN

0,38
0,65 0,15 M
0,22
28 15

0,25
0,09
5,60 8,20
5,00 7,40

Gage Plane

1 14 0,25

A 0°–ā8° 0,95
0,55

Seating Plane

2,00 MAX 0,05 MIN 0,10

PINS **
14 16 20 24 28 30 38
DIM

A MAX 6,50 6,50 7,50 8,50 10,50 10,50 12,90

A MIN 5,90 5,90 6,90 7,90 9,90 9,90 12,30

4040065 /E 12/01

NOTES: A. All linear dimensions are in millimeters.

B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion not to exceed 0,15.
D. Falls within JEDEC MO-150

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

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