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KR920701534A - 반도체 웨이퍼 처리장치 및 방법 - Google Patents

반도체 웨이퍼 처리장치 및 방법

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Publication number
KR920701534A
KR920701534A KR1019910700013A KR910700013A KR920701534A KR 920701534 A KR920701534 A KR 920701534A KR 1019910700013 A KR1019910700013 A KR 1019910700013A KR 910700013 A KR910700013 A KR 910700013A KR 920701534 A KR920701534 A KR 920701534A
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South Korea
Prior art keywords
support
substrate
exhaust
gas
support surface
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KR1019910700013A
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English (en)
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KR0166973B1 (ko
Inventor
비쎄르 얀
Original Assignee
프레데릭 얀 스미트
엔.브이.필립스 글로아이람펜파브리켄
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Priority claimed from PCT/NL1990/000063 external-priority patent/WO1990013687A2/en
Publication of KR920701534A publication Critical patent/KR920701534A/ko
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Publication of KR0166973B1 publication Critical patent/KR0166973B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C23C16/466—Cooling of the substrate using thermal contact gas
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/136—Associated with semiconductor wafer handling including wafer orienting means
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    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
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    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/141—Associated with semiconductor wafer handling includes means for gripping wafer

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract

내용 없음

Description

반도체 웨이퍼 처리장치 및 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 기판 처리 장치의 개략 단면도이다, 제2도는 제1도의 장치 일부를 형성하는 기판지지부의 개략 확대 측단면도이다, 제3도 및 제4도는 기판 지지부의 표면의 일부분에 걸친 주입 구멍과 배기 구멍의 분포의 예를 도시하는 도시도이다.

Claims (19)

  1. 기판(10)과 지지면(11b)사이에 열교환 가스 쿠션을 형성하기 위해 기판과 지지면사이에 가스가 공급될 수 있고, 주입 공간(12)과 보조 가스 유입구(28)와 연통되는 다수의 주입구멍(20)이 몸체(11a)를 갖는 기판지지부(11)가 제공된 진공 챔버(2a, 2b)를 포함하며, 감소 압력하에서 평 기판(10)특히 반도체 웨이퍼를 처리하는 장치에 있어서, 상기 가스쿠션을 유지하는 동안에 각각의 주입구멍을 통해 주입된 가스가 인접 배기 구멍을 통해 배기되도록 기판(10)과 지지면(11b)으로부터 나오는 가스가 배기될 수 있는 배기 공간(24)과 배기출구(18)와 연통되는 다수의 배기구멍(29)이 지지면(11b)에 존재하는 것을 특징으로 하는 반도체 웨이퍼 처리장치.
  2. 제1항에 있어서, 상기 주입구멍은 상호 동일하며 상기 지지부의 표면의 단위 표면적당 제1위치밀도에 따라 분포되고, 상기 배기 구멍의 적어도 주요부분은 상호 동일하며 표면의 단위 표면적당 제2위치 밀도에 따라 분포되는 것을 특징으로 하는 반도체 웨이퍼 처리장치.
  3. 제2항에 있어서, 상기 주입구멍의 제1밀도는 표면상에서 실질적으로 일정하고, 상기 배기구멍의 제2밀도 또한 표면상에서 실질적으로 일정한 것을 특징으로 하는 반도체 웨이퍼 처리 장치.
  4. 제3항에 있어서, 상기 구멍의 제1밀도는 상기 구멍의 제2밀도와 실질적으로 동일한 것을 특징으로 하는 반도체 웨이퍼 처리장치.
  5. 제2항에 있어서, 상기 주입구멍의 제1밀도와 상기 배기구멍의 제2밀도중에서 적어도 하나의 밀도는 상기 기판과 상기 지지부사이의 열교환을 국부적으로 수정하고 처리 조건으로부터 발생되는 기판의 온도 차이를 교정하기 위해서 지지부 표면상의 위치의 함수로서 변화되는 것을 특징으로 하는 반도체 웨이퍼 처리장치.
  6. 제1항에 어서, 상기 다수의 구멍중의 적어도 하나의 구멍의 직경은 기판과 지지부사이의 온도 차이를 국부적으로 수정하기 위하여 지지부 표면상의 위치의 함수로서 변화되는 것을 특징으로 하는 반도체 웨이퍼 처리장치.
  7. 제1항 내지 제항 중 어느 한 항에 있어서, 전체 100개와 200개 사이에 대하여 주입 구멍의 직경은 0.5㎜와 0.2㎜사이에 있고 양호하게는 0.1㎜에 가까우며, 배기구멍의 직경은 1㎜와 3㎜사이에 있는 것을 특징으로 하는 반도체 웨이퍼 처리장치.
  8. 제1항 내지 제7항 중 어느 한 항에 있어서, 상기 기판이 놓이는 지지부 표면은 적어도 하나의 보조 배기구멍에 의해 배기공간과 연통되는 주변 홈을 포함하는 것을 특징으로 하는 반도체 웨이퍼 처리장치.
  9. 제1항 내지 제8항 중 어느 한 항에 있어서, 상기 기판 지지부는 가열 및 냉각수단을 갖는 몸체부가 가열되는 동안에 냉각되는 보조부가 제공된 몸체를 포함하며, 또한 상기 보조부는, 가열되는 몸체 부근에 지지부의 지지표면에 대향 위치되지만, 튜브로부터 필요에 따라 연속적으로 진공과 주어진 유체의 압력이 보조공간내에 형성될 수 있는 상기 튜브에 연결된 보조공간에 의해 몸체부로부터 분리되는 것을 특징으로 하는 반도체 웨이퍼 처리장치.
  10. 공작물을 위한 지지면을 구성하는 작업물 지지부와 작업물 지지부를 위한 가열 및 냉각수단과 상기 지지면에 연하여 분포되고 상기 지지면 내로 들어가며 분배공간과 연통되는 다수의 유출구명과 지지며노가 작업물 사이에 열전달 가스 쿠션을 형성하기 위하여 분배 공간과 유출 구멍을 거쳐 가스를 공급하기 위해 분배 공간에 연결된 가스 유입구를 포함하며, 특히, 진공 장치내에서 표면 철되는 디스크형 작업물용 지지대에 있어서, 상기 유출구멍(258)에 추가하여, 가스 배기출구가 연결된 가스 배기공간(260)과 연통되는 다수의 배기구멍(259)이 지지면 내로 들어가는 것을 특징으로 하는 디스크형 작업물용 지지대.
  11. 제10항에 있어서, 상기 유출구멍(258)은 상호 동일한 것을 특징으로 하는 디스크형 작업물용 지지대.
  12. 제11항에 있어서, 상기 유출구멍(258)은 작업물 지지부(205)에 연하여 규칙적으로 분포되는 것을 특징으로 하는 디스크형 작업물용 지지대.
  13. 제10항, 제11항 또는 제12항에 있어서, 상기 배기구멍(259)의 대부분은 같은 방식으로 형성된 것을 특징으로 하는 디스크형 작업물용 지지대.
  14. 제13항에 있어서, 상기 배기구멍의 대부분은 상기 작업물 지지부(205)에 연하여 균일하게 분포되는 것을 특징으로 하는 디스크형 작업물용 지지대.
  15. 제10항 내지 제13항 중 어느 한 항에 있어서, 상기 지지면으로부터 볼 때에, 상기 가스 배기공간(260)은 상기 분배공간(252)아래에 위치되는 것을 특징으로 하는 디스크형 작업물용 지지대.
  16. 제10항 내지 제15항중 어느 한 항에 있어서, 상기 배기구멍은 덮개판(255)을 통해서 상기 작업물 지지부(205)의 주변을 따라 연장된 홈(261)으로서 상기 작업물 지지부(205)의 주변을 따라 형성되는 것을 특징으로 하는 디스크형 작업물용 지지대.
  17. 제16항에 있어서, 상기 홈(261)은 판(251)을 통해 연장되는 것을 특징으로 하는 디스크형 작업물용 지지대.
  18. 제10항 내지 제17항중 적어도 한 항에서 청구된 하나 이상의 작업물 지지대를 포함하는 것을 특징으로하는 작업물 처리용 진공 처리 챔버.
  19. 기판(10)과 지지면(11b)사이에 열교환 가스쿠션을 형성하기 위해 기판과 지지면 사이에 가스가 공급될 수 있고, 주입공간(12)과 보조 가스 유입구(28)와 연통되는 다수의 주입구멍(20)이 존재하는 지지면(11b)과 가열 및 냉각수단(12)을 가진 몸체(11a)를 갖는 기판 지지부(11)가 제공된 진공 챔버(2a,2b)내에서, 집적 회로 제조에 있어서, 평 기판 특히 반도체 웨이퍼가 감소 압력하에서 처리되는 전자 소자 제조 방법에 있어서, 상기 가스 쿠션을 유지하면서, 각각의 주입 구멍을 통해서 주입된 가스가 인접 배기구멍을 통해서 배기되도록, 배기 공간(24)및 배기출구(18)와 연통되며 또한 상기 지지면(11b)에 존재하는 다수의 배기구멍(29)을 통해서 기판과 지지면 사이로부터 가스가 배기되는 것을 특징으로 하는 전자 소자 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910700013A 1989-05-08 1990-05-07 반도체 웨이퍼 처리장치 및 방법 KR0166973B1 (ko)

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PCT/NL1990/000063 WO1990013687A2 (en) 1989-05-08 1990-05-07 Apparatus and method for treating flat substrates under reduced pressure

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100351049B1 (ko) * 1999-07-26 2002-09-09 삼성전자 주식회사 웨이퍼 가열 방법 및 이를 적용한 장치
US8088225B2 (en) 2004-02-13 2012-01-03 Asm America, Inc. Substrate support system for reduced autodoping and backside deposition
KR101112029B1 (ko) * 2004-02-13 2012-03-21 에이에스엠 아메리카, 인코포레이티드 자동 도핑 및 후면 증착의 감소를 위한 기판 지지 시스템

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DE3943478C2 (de) 1995-11-16
EP0397029A3 (en) 1990-12-12
ES2038012T3 (es) 1993-07-01
DE59000869D1 (de) 1993-03-25
EP0396923A1 (de) 1990-11-14
JP2918986B2 (ja) 1999-07-12
JPH0349839A (ja) 1991-03-04
DE3943482C2 (de) 1994-07-07
ATE85589T1 (de) 1993-02-15
DD298450A5 (de) 1992-02-20
DE59000868D1 (de) 1993-03-25
US5051054A (en) 1991-09-24
EP0397029A2 (de) 1990-11-14
DE3943482A1 (de) 1990-11-15
DD298435A5 (de) 1992-02-20
US5033538A (en) 1991-07-23
KR0166973B1 (ko) 1999-01-15
KR900017726A (ko) 1990-12-19
ES2038016T3 (es) 1993-07-01
DE3915039C2 (ko) 1992-01-09
KR0132665B1 (ko) 1998-04-13
ATE85658T1 (de) 1993-02-15
DE3915039A1 (de) 1990-11-15
EP0397029B1 (de) 1993-02-10
KR900017725A (ko) 1990-12-19
EP0396923B1 (de) 1993-02-10
DE3943478A1 (de) 1990-11-15
JPH02308547A (ja) 1990-12-21

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