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KR900017725A - 리프팅 테이블 및 운반방법 - Google Patents

리프팅 테이블 및 운반방법 Download PDF

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Publication number
KR900017725A
KR900017725A KR1019900006219A KR900006219A KR900017725A KR 900017725 A KR900017725 A KR 900017725A KR 1019900006219 A KR1019900006219 A KR 1019900006219A KR 900006219 A KR900006219 A KR 900006219A KR 900017725 A KR900017725 A KR 900017725A
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South Korea
Prior art keywords
lifting table
workpiece
assembly body
annular flange
rod
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KR1019900006219A
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English (en)
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바그너 루돌프
히르쉐 한스
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배 카우프만, 우. 베그만
발찌스 악티엔게젤샤프트
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Publication of KR900017725A publication Critical patent/KR900017725A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C23C16/466—Cooling of the substrate using thermal contact gas
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/136—Associated with semiconductor wafer handling including wafer orienting means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/141—Associated with semiconductor wafer handling includes means for gripping wafer

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  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Furnace Charging Or Discharging (AREA)
  • Jigs For Machine Tools (AREA)
  • Drying Of Semiconductors (AREA)
  • Containers, Films, And Cooling For Superconductive Devices (AREA)
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Abstract

내용 없음

Description

리프팅 테이블 및 운반방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 리프팅 테이블에 의하여 장입되는 처리실에 대한 여러위치들을 절선, 점으로 도시한 리프팅 테이블의 제2도의 선(1-1)에 따라 취한 수직단면도, 제2도는 유지기관이 달린 리프팅 테이블의 중요부분을 도시한 도면.

Claims (16)

  1. 공작물의 표면철용 장치, 특히 진공장치내에서 상하로 움직이는 디스크모양의 공작물을 운반하는 리프팅 테이블로서, 공작물을 리프팅 테이블위에 고정시키는데 이용되는 유지기구가 달려있는 리프팅 테이블에 있어서, 케이싱(2)내에서 오르내릴 수 있게 장착되어 있는 지지물(3)에 상단부에는 지지물위로 돌출한 공작물 받침대(5)와 공작물 받침대 아래에 일정한 간격을 두고 공작물 받침대 보다 돌출하고, 지지물에 고정배치된 환상플랜지(7)가 달려 있고, 그 외측영역에는 조립용몸체(9)가 배치되어 있고, 이러한 조립용 몸체내에는 지지물(3)의 축선에 대하여 수평으로 뻗어 있는 회전축(10)의 모터(2)에 의하여 구동되면서 회전할 수 있게 장착되어 있으며, 상단부에서 회전축선에 대하여 직각으로 뻗어 있고, 회전축선에 대하여 평행인 선회축선(17)이 제공된 선회링크가 달린 2개 부분으로 구성된 지브암(14,15,16)이 지브암부재(15,16)사이에 달려있고, 그중 지브암(14)의 또다른 단부에는 조립용 몸체 (18)가 달려있으며, 이 조립용 몸체내에는 회전축선에 대하여 평행인 로드(20)가 축방향으로 이동할 수 있게 장착되어 있고, 스프링의 작용으로 축방향으로 이동할 수 있게 유지되며, 그 로드(20)가 위쪽으로 공작물 받침대(5)의 측면에서 그 상부가장자리까지 뻗어 있고, 단부에 유지기구(30)가 달려 있는 것을 특징으로 하는 리프팅 테이블.
  2. 제1항에 있어서, 유지기구(30)에 공작물 가장자리에 맞대어 압착되는 회전링(28)이 포함되어 있는 것을 특징으로 하는 리프팅 테이블.
  3. 제1항 또는 제2항중 한 항에 있어서, 유지기구에 공작물의 가장자리너머에 까지 뻗쳐있는 가장자리가 제공되어 있는 것을 특징으로 하는 리프팅 테이블.
  4. 제1항 내지 제3항중 한항에 있어서, 3개의 조립용 몸체(9)가 하나의 유지기구(30)는 대칭선(31)상에서 공작물 받침대(5)에 의하여 선회할수 있고, 다른 2개의 유지기구들은 대칭선(31)의 양측에서 서로 정반대로 대향하여 있도록 환상 플랜지(7)에 배치되어 있는 것을 특징으로 하는 리프팅 테이블.
  5. 제1항 내지 제4항중 한 항에 있어서, 환상플랜지(7)가 외측연단에서 지지물에 대하여 동축방향으로 뻗어있는 실린더몸체(40)와 고정결합되어 있고, 그 상부전면이 리프팅 테이블(1)이 상승할때 장치를 진공실벽(31)에 맞대어 밀폐시키기 위한 밸브폐쇄기구로서 형성되어 있고, 회전축(10)용 모터가 환상플랜지(7) 아래에 배치되어 있고, 이 환상플랜지의 아래측에 고정된 보호케이싱(13)에 둘러싸여 있는 것을 특징으로 하는 리프팅 테이블.
  6. 제1항 내지 제5항중 한 항에 있어서, 로드(20)의 조립용 몸체(18)에 일단부에 의하여 고정된 금속사복부(23)가 그 또 다른 단부에 의하여 로드(20)에 고정되어 있는 것을 특징으로 하는 리프팅 테이블.
  7. 제6항에 있어서, 로드(20)용 압착스프링(21)이 사복부(23) 내부에 배치되어 있는 것을 특징으로 하는 리프팅 테이블.
  8. 제1항 내지 제7항중 한 항에 있어서, 로드(20)의 조립용 몸체(18)가 하부에서 폐쇄된 부시로 되어 있는 것을 특징으로 하는 리프팅 테이블.
  9. 제7항에 있어서, 조립용 몸체(18)와 급속사복부(23)내에 볼베어링 부시(19)와 같은 로드(20)용 안내부재가 제공되어 있는 것을 특징으로 하는 리프팅 테이블.
  10. 제1항 내지 제9항중 한 항에 있어서, 조립용 몸체(18)의 내부공간이 금속사복부와 로드(20)에 의하여 폐쇄 되어 있고, 가요성관(24)이 조립용 몸체(18)의 내부공간에 접속되어 있고, 이 내부공간이 조립용 몸체(18)의 내부공간을 진공으로 만들 수 있도록 진공원에 접속되어 있는 것을 특징으로 하는 리프팅 테이블.
  11. 제10항에 있어서, 회전축(10)이 중공축으로서 형성되어 있고, 가요성관(24)이 조립용 몸체(18)의 내부공간과 회전축(10)의 공동사이에 뻗어있고, 특히 회전축(10)의 공동(25)이 가로천공(26)을 거쳐 환상플랜지(7)내에 방사상으로 뻗어 있는 통로(27)에 접속되어 있는 것을 특징으로 하는 리프팅 테이블.
  12. 제1항 내지 제11항중 한 항에 있어서, 환상플랜지(7)와 케이싱(2) 사이에, 특히 환상플랜지(7) 아래쪽에 금속사복부(44)가 제공되어 있는 것을 특징으로 하는 리프팅 테이블.
  13. 제1항 내지 제12항중 한 항에 있어서, 케이싱에 고정된 덮개(34)가 제공되어 있고, 이 덮개 뒤에서 유지기구가 리프팅 테이블이 상승할때, 스프링(21)의 작용으로 팽팽하게 인장됨으로써 표면처리에서 이탈되는 것을 특징으로 하는 리프팅 테이블.
  14. 제1항 내지 제13항중 한 항에 있어서, 링(38)이 훅(39)에 의하여 지지물(3)의 축선과 동축방향으로 케이싱에 고정된 부분에 부착되도록 제공되어 있고, 리프팅 테이블이 상승할때 훅(38)을 거쳐 공작물을 움직이지 못하게 누르는 것을 특징으로 하는 리프팅 테이블.
  15. 공작물과 맞물려 있는 유지기구에 의하여 공작물을 리프팅 테이블 위에 위치하게 하면서, 리프팅 테이블 상의 디스크형 공작물을 표면처리 장치의 처리위치로 운반하는 방법으로서, 먼저 유지기구를 리프팅 테이블상에 놓여 있는 공작물에 맞대어 붙이고, 이에 의하여 공작물이 리프팅 테이블위에 위치하게하고, 이어서 리프팅 테이블을 유지기구와 맞물린 상태를 유지하면서 처리위치로 이동시키고, 그 다음에는 유지기구를 리프팅 테이블로부터 분리시켜서 덮개에 의하여 표면처리되지 아니하는 릴리스 위치로 이동시키는 것을 특징으로 하는 방법.
  16. 제15항에 있어서, 처리위치에 있는 공작물에, 공작물을 둘러싸고, 그 주변을 덮어씌우는 느슨하게 올려놓여진 링에 의하여 지지력이 가해지는 것을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900006219A 1989-05-08 1990-05-01 리프팅 테이블 및 운반방법 KR900017725A (ko)

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DE3943478C2 (de) 1995-11-16
EP0397029A3 (en) 1990-12-12
ES2038012T3 (es) 1993-07-01
DE59000869D1 (de) 1993-03-25
EP0396923A1 (de) 1990-11-14
JP2918986B2 (ja) 1999-07-12
JPH0349839A (ja) 1991-03-04
DE3943482C2 (de) 1994-07-07
ATE85589T1 (de) 1993-02-15
DD298450A5 (de) 1992-02-20
DE59000868D1 (de) 1993-03-25
US5051054A (en) 1991-09-24
EP0397029A2 (de) 1990-11-14
DE3943482A1 (de) 1990-11-15
DD298435A5 (de) 1992-02-20
US5033538A (en) 1991-07-23
KR0166973B1 (ko) 1999-01-15
KR900017726A (ko) 1990-12-19
ES2038016T3 (es) 1993-07-01
KR920701534A (ko) 1992-08-12
DE3915039C2 (ko) 1992-01-09
KR0132665B1 (ko) 1998-04-13
ATE85658T1 (de) 1993-02-15
DE3915039A1 (de) 1990-11-15
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