KR100514546B1 - 방사선검출소자및그제조방법 - Google Patents
방사선검출소자및그제조방법 Download PDFInfo
- Publication number
- KR100514546B1 KR100514546B1 KR10-1998-0709605A KR19980709605A KR100514546B1 KR 100514546 B1 KR100514546 B1 KR 100514546B1 KR 19980709605 A KR19980709605 A KR 19980709605A KR 100514546 B1 KR100514546 B1 KR 100514546B1
- Authority
- KR
- South Korea
- Prior art keywords
- light receiving
- protective film
- receiving element
- resistant protective
- moisture resistant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 230000005855 radiation Effects 0.000 title claims description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 230000001681 protective effect Effects 0.000 claims abstract description 65
- 239000011248 coating agent Substances 0.000 claims abstract description 33
- 238000000576 coating method Methods 0.000 claims abstract description 33
- 239000011347 resin Substances 0.000 claims abstract description 26
- 229920005989 resin Polymers 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000001514 detection method Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 10
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- 230000004888 barrier function Effects 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 3
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- 229920000052 poly(p-xylylene) Polymers 0.000 abstract description 17
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- 239000010408 film Substances 0.000 description 90
- 238000003384 imaging method Methods 0.000 description 9
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000007789 sealing Methods 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
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- 229910052751 metal Inorganic materials 0.000 description 3
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- 238000011976 chest X-ray Methods 0.000 description 2
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- 239000011521 glass Substances 0.000 description 2
- 230000000379 polymerizing effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- VRBFTYUMFJWSJY-UHFFFAOYSA-N 28804-46-8 Chemical compound ClC1CC(C=C2)=CC=C2C(Cl)CC2=CC=C1C=C2 VRBFTYUMFJWSJY-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
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- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical group 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20188—Auxiliary details, e.g. casings or cooling
- G01T1/20189—Damping or insulation against damage, e.g. caused by heat or pressure
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
Abstract
Description
Claims (8)
- 복수의 수광 소자를 기판 상에 1차원 또는 2차원으로 배열하여 수광부를 형성하며, 상기 수광부의 각 행 또는 각 열의 상기 수광 소자와 전기적으로 접속된 복수의 본딩 패드를 상기 수광부의 외부에 갖는 수광 소자 어레이와,상기 수광 소자 상에 퇴적된 방사선을 가시광으로 변환하는 신틸레이터층과,상기 신틸레이터층을 덮고 있는 동시에, 상기 수광 소자 어레이의 상기 본딩 패드 부분을 노출시키고 있는 방사선 투과성의 내습 보호막과,상기 내습 보호막을 상기 수광 소자 어레이의 노출 부분과의 경계 부분인 상기 내습 보호막의 가장자리를 따라서 코팅하여 상기 내습 보호막의 가장자리를 상기 수광 소자 어레이에 밀착시키고 있는 피복 수지를 구비하는 것을 특징으로 하는 방사선 검출소자
- 제 1 항에 있어서, 상기 본딩 패드는 상기 기판의 외주변부에 위치되어 있으며, 상기 내습 보호막은 상기 수광부의 외변과 상기 수광 소자 어레이 외변의 사이까지 덮어 형성되며, 상기 피복 수지는 상기 내습 보호막 외주부를 코팅하고 있는 것을 특징으로 하는 방사선 검출소자.
- 제 1항 또는 제 2 항에 있어서, 상기 내습 보호막은 적어도 유기막을 포함하는 2층 이상의 다충막으로 이루어진 것을 특징으로 하는 방사선 검출소자.
- 제 3 항에 있어서, 상기 내습 보호막은 적어도 1층의 무기막을 포함하는 것을 특징으로 하는 방사선 검출소자.
- 복수의 수광 소자를 기판 상에 1차원 또는 2차원으로 배열하여 수광부를 형성하며, 상기 수광부의 각 행 또는 각 열의 상기 수광 소자와 전기적으로 접속된 복수의 본딩 패드를 상기 수광부의 외부에 배치한 수광 소자 어레이의 상기 수광 소자 상에 방사선을 가시광으로 변환하는 신틸레이터층을 퇴적시키는 공정과,상기 수광 소자 어레이 전체를 포위하도록 방사선 투과성의 내습 보호막을 형성하는 공정과,상기 신틸레이터층의 외측에서, 적어도 상기 본딩 패드를 덮고 있는 부분의 상기 내습 보호막을 절단하여 제거하며, 적어도 상기 본딩 패드를 포함하는 영역의 상기 수광 소자 어레이 부분을 노출시키는 공정과,상기 내습 보호막을 상기 수광 소자 어레이의 노출 부분과의 경계인 가장자리 부분을 따라서 수지에 의해 코팅하며, 상기 내습 보호막의 가장자리를 상기 수광 소자 어레이에 밀착시키는 공정을 갖는 것을 특징으로 하는 방사선 검출소자의 제조방법.
- 복수의 수광 소자를 기판 상에 1차원 또는 2차원으로 배열하여 수광부를 형성하며, 상기 수광부의 각 행 또는 각 열의 상기 수광 소자와 전기적으로 접속된 복수의 본딩 패드를 상기 기판의 외주변부에 배열시킨 수광 소자 어레이의 상기 수광 소자 상에 방사선을 가시광으로 변환하는 신틸레이터층을 퇴적시키는 공정과,상기 수광 소자 어레이 전체를 포위하도록 방사선 투과성의 내습 보호막을 형성하는 공정과,상기 신틸레이터층의 외주와 상기 본딩 패드 부분의 사이의 위치에서 상기 내습 보호막을 상기 신틸레이터층의 외주를 따라서 절단하며, 이 절단면 보다 외측 및 입사면 이면 부분에 형성된 상기 내습 보호막을 제거하여 상기 본딩 패드를 노출시키는 공정과,절단된 상기 내습 보호막의 외주부를 수지에 의해 코팅하여 상기 내습 보호막 외주부를 상기 수광 소자 어레이에 밀착시키는 공정을 갖는 것을 특징으로 하는 방사선 검출소자의 제조방법.
- 제 5 항 또는 제 6 항에 있어서, 상기 내습 보호막을 형성하는 공정은,방사선 투과성의 제 1 유기막을 형성하는 공정과,상기 제 1 유기막 상에 적어도 1층 이상의 막을 또한 적층하여, 2층 이상의 다층막으로 이루어진 방사선 투과성의 내습 보호막을 형성하는 공정으로 이루어진 것을 특징으로 하는 방사선 검출소자의 제조방법.
- 제 7 항에 있어서, 상기 내습 보호막은 적어도 1층의 무기막을 포함하는 것을 특징으로 하는 방사선 검출소자의 제조방법.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP97-30508 | 1997-02-14 | ||
JP3050897 | 1997-02-14 | ||
PCT/JP1998/000550 WO1998036290A1 (fr) | 1997-02-14 | 1998-02-12 | Dispositif de detection de radiations et son procede de production |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000065225A KR20000065225A (ko) | 2000-11-06 |
KR100514546B1 true KR100514546B1 (ko) | 2005-12-02 |
Family
ID=12305763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-1998-0709605A Expired - Lifetime KR100514546B1 (ko) | 1997-02-14 | 1998-02-12 | 방사선검출소자및그제조방법 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6278118B1 (ko) |
EP (2) | EP1134596B1 (ko) |
KR (1) | KR100514546B1 (ko) |
CN (3) | CN101285888B (ko) |
AU (1) | AU5878798A (ko) |
CA (1) | CA2261663C (ko) |
DE (2) | DE69803438T2 (ko) |
WO (1) | WO1998036290A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101325812B1 (ko) | 2009-12-18 | 2013-11-08 | 도시바 덴시칸 디바이스 가부시키가이샤 | 방사선 검출기와 그 제조 방법 |
Families Citing this family (75)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3405706B2 (ja) | 1997-02-14 | 2003-05-12 | 浜松ホトニクス株式会社 | 放射線検出素子 |
US7019301B2 (en) | 1997-02-14 | 2006-03-28 | Hamamatsu Photonics K.K. | Radiation detection device and method of making the same |
US7034306B2 (en) | 1998-06-18 | 2006-04-25 | Hamamatsu Photonics K.K. | Scintillator panel and radiation image sensor |
CN1144064C (zh) * | 1998-06-18 | 2004-03-31 | 浜松光子学株式会社 | 有机膜蒸镀方法 |
CN1140815C (zh) * | 1998-06-18 | 2004-03-03 | 浜松光子学株式会社 | 闪烁器仪表盘、放射线图象传感器及其制造方法 |
KR100581102B1 (ko) | 1998-06-18 | 2006-05-16 | 하마마츠 포토닉스 가부시키가이샤 | 신틸레이터 패널 및 방사선 이미지 센서 |
JP2000131444A (ja) | 1998-10-28 | 2000-05-12 | Canon Inc | 放射線検出装置、放射線検出システム、及び放射線検出装置の製造方法 |
EP1148349A4 (en) * | 1998-12-14 | 2003-07-09 | Hamamatsu Photonics Kk | OPTICAL ELEMENT AND RADIATION DETECTOR USED BY THE SAME |
AU3168199A (en) | 1999-04-09 | 2000-11-14 | Hamamatsu Photonics K.K. | Scintillator panel and radiation ray image sensor |
KR100734546B1 (ko) | 2000-01-13 | 2007-07-04 | 하마마츠 포토닉스 가부시키가이샤 | 방사선 이미지 센서 및 신틸레이터 패널 |
JP4197593B2 (ja) | 2000-01-13 | 2008-12-17 | 浜松ホトニクス株式会社 | 放射線イメージセンサ及びシンチレータパネル |
US6949750B2 (en) * | 2000-03-30 | 2005-09-27 | Matsushita Electric Industrial Co., Ltd. | Radiation detecting element and method of manufacturing the same |
JP2001296365A (ja) * | 2000-04-13 | 2001-10-26 | Matsushita Electric Ind Co Ltd | X線撮影センサ |
JP4234304B2 (ja) * | 2000-05-19 | 2009-03-04 | 浜松ホトニクス株式会社 | 放射線検出器 |
WO2001088568A1 (fr) | 2000-05-19 | 2001-11-22 | Hamamatsu Photonics K.K. | Detecteur de rayonnement et procede de fabrication de ce detecteur |
JP4398065B2 (ja) * | 2000-05-19 | 2010-01-13 | 浜松ホトニクス株式会社 | 放射線検出器 |
FR2812089B1 (fr) * | 2000-07-21 | 2007-11-30 | Trixell Sas | Detecteur de rayonnement a duree de vie accrue |
AU2001275802A1 (en) * | 2000-07-31 | 2002-02-13 | Hamamatsu Photonics K.K. | Radiation sensor |
JP4447752B2 (ja) | 2000-08-03 | 2010-04-07 | 浜松ホトニクス株式会社 | 放射線検出器 |
JP4283427B2 (ja) | 2000-08-03 | 2009-06-24 | 浜松ホトニクス株式会社 | 放射線検出器およびシンチレータパネル |
JP5031172B2 (ja) | 2000-09-11 | 2012-09-19 | 浜松ホトニクス株式会社 | シンチレータパネル、放射線イメージセンサおよびそれらの製造方法 |
EP1879050A3 (en) * | 2000-09-11 | 2008-03-26 | Hamamatsu Photonics K.K. | Scintillator panel, radiation image sensor and methods of producing them |
DE10047916C2 (de) * | 2000-09-27 | 2003-01-09 | Siemens Ag | Vorrichtung zur Erfassung ionisierender Strahlung |
DE10051162A1 (de) * | 2000-10-16 | 2002-05-02 | Siemens Ag | Strahlendetektor |
US6541774B1 (en) * | 2000-11-03 | 2003-04-01 | General Electric Company | Radiation imager cover |
US6483115B1 (en) * | 2000-11-08 | 2002-11-19 | General Electric Company | Method for enhancing scintillator adhesion to digital x-ray detectors |
US6835936B2 (en) * | 2001-02-07 | 2004-12-28 | Canon Kabushiki Kaisha | Scintillator panel, method of manufacturing scintillator panel, radiation detection device, and radiation detection system |
US7036998B2 (en) * | 2001-05-17 | 2006-05-02 | Sumitomo Electric Industries, Ltd. | Optical part, optical module sleeve, optical receiving module, optical communication module, and method of making optical part |
US6657201B2 (en) * | 2001-06-29 | 2003-12-02 | General Electric Company | Cover plate having spacer lip with hermetic barrier for radiation imager and method of manufacturing same |
US6770885B2 (en) * | 2001-08-29 | 2004-08-03 | General Electric Company | Systems and methods for detecting ionizing radiation with an imaging system |
US7126130B2 (en) | 2001-12-06 | 2006-10-24 | General Electric Company | Direct scintillator coating for radiation detector assembly longevity |
US7053381B2 (en) | 2001-12-06 | 2006-05-30 | General Electric Company | Dual para-xylylene layers for an X-ray detector |
US6720561B2 (en) | 2001-12-06 | 2004-04-13 | General Electric Company | Direct CsI scintillator coating for improved digital X-ray detector assembly longevity |
US6642524B2 (en) * | 2002-01-09 | 2003-11-04 | Ge Medical Systems Global Technology Company, Llc | Scintillator sealing for solid state X-ray detector |
US7122804B2 (en) * | 2002-02-15 | 2006-10-17 | Varian Medical Systems Technologies, Inc. | X-ray imaging device |
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- 1998-02-12 CN CN2008100923618A patent/CN101285888B/zh not_active Expired - Lifetime
- 1998-02-12 CA CA002261663A patent/CA2261663C/en not_active Expired - Lifetime
- 1998-02-12 EP EP01114020A patent/EP1134596B1/en not_active Expired - Lifetime
- 1998-02-12 KR KR10-1998-0709605A patent/KR100514546B1/ko not_active Expired - Lifetime
- 1998-02-12 CN CN2008100923622A patent/CN101285889B/zh not_active Expired - Lifetime
- 1998-02-12 CN CNB988004275A patent/CN100397096C/zh not_active Expired - Lifetime
- 1998-02-12 DE DE69803438T patent/DE69803438T2/de not_active Expired - Lifetime
- 1998-02-12 EP EP98902185A patent/EP0932053B1/en not_active Expired - Lifetime
- 1998-02-12 AU AU58787/98A patent/AU5878798A/en not_active Abandoned
- 1998-02-12 DE DE69817035T patent/DE69817035T2/de not_active Expired - Lifetime
- 1998-02-12 WO PCT/JP1998/000550 patent/WO1998036290A1/ja active IP Right Grant
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1999
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101325812B1 (ko) | 2009-12-18 | 2013-11-08 | 도시바 덴시칸 디바이스 가부시키가이샤 | 방사선 검출기와 그 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
CN101285888B (zh) | 2012-01-18 |
EP1134596A2 (en) | 2001-09-19 |
CA2261663A1 (en) | 1998-08-20 |
EP1134596B1 (en) | 2003-08-06 |
DE69817035T2 (de) | 2004-06-09 |
EP0932053A1 (en) | 1999-07-28 |
EP1134596A3 (en) | 2002-07-31 |
DE69817035D1 (de) | 2003-09-11 |
CN100397096C (zh) | 2008-06-25 |
CN101285889A (zh) | 2008-10-15 |
CN101285888A (zh) | 2008-10-15 |
WO1998036290A1 (fr) | 1998-08-20 |
CN101285889B (zh) | 2012-10-03 |
US6278118B1 (en) | 2001-08-21 |
EP0932053B1 (en) | 2002-01-09 |
EP0932053A4 (en) | 1999-11-10 |
KR20000065225A (ko) | 2000-11-06 |
CA2261663C (en) | 2001-08-28 |
CN1222977A (zh) | 1999-07-14 |
DE69803438T2 (de) | 2002-07-11 |
DE69803438D1 (de) | 2002-02-28 |
AU5878798A (en) | 1998-09-08 |
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