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JPS5680178A - Gaas solar cell - Google Patents

Gaas solar cell

Info

Publication number
JPS5680178A
JPS5680178A JP15849679A JP15849679A JPS5680178A JP S5680178 A JPS5680178 A JP S5680178A JP 15849679 A JP15849679 A JP 15849679A JP 15849679 A JP15849679 A JP 15849679A JP S5680178 A JPS5680178 A JP S5680178A
Authority
JP
Japan
Prior art keywords
layer
type gaas
type
carriers
solar cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15849679A
Other languages
Japanese (ja)
Inventor
Kotaro Mitsui
Susumu Yoshida
Takao Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15849679A priority Critical patent/JPS5680178A/en
Publication of JPS5680178A publication Critical patent/JPS5680178A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To increase photoelectric converting efficiency by a method wherein a p type GaAs layer containing Si as principal impurities, the life time or diffusing distance of a small number of carriers thereof is long, is used as an effective light receiving region. CONSTITUTION:A p type GaAs layer 8 containing Si as principal impurities is formed on an n type GaAs substrate 1, and a p type Ga1-XAlXAs layer 4 is formed on the layer 8. By employing said GaAs solar cell, since most of the lights transmitting the p type Ga1-XAlXAs layer 4 are absorbed in the liquid phase epitaxial p type GaAs layer 8 to which Si, wherein the diffusing distance of a small number of carriers is long, is added, the collecting efficiency of light carriers being generated is improved as compared with the conventional structure using a p type GaAs layer formed by diffusing Zn as a light receiving region, and photoelectric converting efficiency is increased.
JP15849679A 1979-12-05 1979-12-05 Gaas solar cell Pending JPS5680178A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15849679A JPS5680178A (en) 1979-12-05 1979-12-05 Gaas solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15849679A JPS5680178A (en) 1979-12-05 1979-12-05 Gaas solar cell

Publications (1)

Publication Number Publication Date
JPS5680178A true JPS5680178A (en) 1981-07-01

Family

ID=15673000

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15849679A Pending JPS5680178A (en) 1979-12-05 1979-12-05 Gaas solar cell

Country Status (1)

Country Link
JP (1) JPS5680178A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05326996A (en) * 1992-05-20 1993-12-10 Hitachi Ltd Semiconductor device
DE102016206382A1 (en) 2015-09-17 2017-03-23 Mitsubishi Electric Corporation Motor controller
US11525722B2 (en) 2018-02-20 2022-12-13 Omron Corporation Detection device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05326996A (en) * 1992-05-20 1993-12-10 Hitachi Ltd Semiconductor device
DE102016206382A1 (en) 2015-09-17 2017-03-23 Mitsubishi Electric Corporation Motor controller
DE102016206382B4 (en) 2015-09-17 2021-12-23 Mitsubishi Electric Corporation Engine control device
US11525722B2 (en) 2018-02-20 2022-12-13 Omron Corporation Detection device

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