JPS53136987A - Photo diode - Google Patents
Photo diodeInfo
- Publication number
- JPS53136987A JPS53136987A JP5120777A JP5120777A JPS53136987A JP S53136987 A JPS53136987 A JP S53136987A JP 5120777 A JP5120777 A JP 5120777A JP 5120777 A JP5120777 A JP 5120777A JP S53136987 A JPS53136987 A JP S53136987A
- Authority
- JP
- Japan
- Prior art keywords
- photo diode
- features
- impurity concentration
- conductive type
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012535 impurity Substances 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To increase the photoelectric conversion efficiency at the ultraviolet ray regions between the light receiving layer which is uni-conductive type and features a low impurity concentration and the layer which is reverse-conductive type and features a high impurity concentration when a PN junction is formed by these two layers.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5120777A JPS53136987A (en) | 1977-05-06 | 1977-05-06 | Photo diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5120777A JPS53136987A (en) | 1977-05-06 | 1977-05-06 | Photo diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53136987A true JPS53136987A (en) | 1978-11-29 |
Family
ID=12880449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5120777A Pending JPS53136987A (en) | 1977-05-06 | 1977-05-06 | Photo diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53136987A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62200774A (en) * | 1986-02-28 | 1987-09-04 | Hitachi Ltd | Semiconductor photodetector |
US4835587A (en) * | 1984-09-19 | 1989-05-30 | Fuji Electric Co., Ltd. | Semiconductor device for detecting radiation |
US4918508A (en) * | 1986-03-28 | 1990-04-17 | General Electric Company | Vertical photoconductive detector |
US5010018A (en) * | 1989-06-21 | 1991-04-23 | General Electric Company | Method for forming Schottky photodiodes |
AT393009B (en) * | 1989-11-07 | 1991-07-25 | Poska Albertas Ionas Antanovic | AUTOMATIC VALVE |
-
1977
- 1977-05-06 JP JP5120777A patent/JPS53136987A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4835587A (en) * | 1984-09-19 | 1989-05-30 | Fuji Electric Co., Ltd. | Semiconductor device for detecting radiation |
JPS62200774A (en) * | 1986-02-28 | 1987-09-04 | Hitachi Ltd | Semiconductor photodetector |
US4918508A (en) * | 1986-03-28 | 1990-04-17 | General Electric Company | Vertical photoconductive detector |
US5010018A (en) * | 1989-06-21 | 1991-04-23 | General Electric Company | Method for forming Schottky photodiodes |
AT393009B (en) * | 1989-11-07 | 1991-07-25 | Poska Albertas Ionas Antanovic | AUTOMATIC VALVE |
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