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FR2549642B1 - SOLAR CELL - Google Patents

SOLAR CELL

Info

Publication number
FR2549642B1
FR2549642B1 FR8411316A FR8411316A FR2549642B1 FR 2549642 B1 FR2549642 B1 FR 2549642B1 FR 8411316 A FR8411316 A FR 8411316A FR 8411316 A FR8411316 A FR 8411316A FR 2549642 B1 FR2549642 B1 FR 2549642B1
Authority
FR
France
Prior art keywords
type inp
solar cell
inp layer
grid electrode
carrier concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8411316A
Other languages
French (fr)
Other versions
FR2549642A1 (en
Inventor
Masafumi Yamaguchi
Akio Yamamoto
Chikao Uemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP58129542A external-priority patent/JPS6022381A/en
Priority claimed from JP58197516A external-priority patent/JPS6089982A/en
Priority claimed from JP59074493A external-priority patent/JPS60218880A/en
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of FR2549642A1 publication Critical patent/FR2549642A1/en
Application granted granted Critical
Publication of FR2549642B1 publication Critical patent/FR2549642B1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1243—Active materials comprising only Group III-V materials, e.g. GaAs characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

An InP solar cell having a p-type InP single crystal substrate having a carrier concentration of 2x1016-2x1018 cm-3, an n-type InP layer containing a dopant of at least one element selected from VIA group including S and Se disposed on said substrate with a thickness of 0.05-1 mu m, said n-type InP layer having a carrier concentration of 5x1017-1x1019 cm-3, a grid electrode arranged on said n-type InP layer, and an anti-reflection coating formed on said n-type InP layer and said grid electrode. The solar cell has a high efficiency and superior radiation resistance characteristics.
FR8411316A 1983-07-18 1984-07-17 SOLAR CELL Expired FR2549642B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP58129542A JPS6022381A (en) 1983-07-18 1983-07-18 Solar cell
JP58197516A JPS6089982A (en) 1983-10-24 1983-10-24 Solar battery
JP59074493A JPS60218880A (en) 1984-04-13 1984-04-13 Inp solar battery

Publications (2)

Publication Number Publication Date
FR2549642A1 FR2549642A1 (en) 1985-01-25
FR2549642B1 true FR2549642B1 (en) 1987-09-04

Family

ID=27301523

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8411316A Expired FR2549642B1 (en) 1983-07-18 1984-07-17 SOLAR CELL

Country Status (3)

Country Link
US (1) US4591654A (en)
DE (1) DE3426338A1 (en)
FR (1) FR2549642B1 (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5047565A (en) * 1987-10-14 1991-09-10 Board Of Regents, The University Of Texas System Mononuclear and multinuclear phosphido, arsenido, and stibido complexes of aluminum, gallium and indium
FR2627013A1 (en) * 1988-02-05 1989-08-11 Thomson Csf SEMICONDUCTOR PHOTOVOLTAIC GENERATOR MADE ON A SUBSTRATE OF DIFFERENT MESH PARAMETER
JPH01207920A (en) * 1988-02-16 1989-08-21 Oki Electric Ind Co Ltd Method for manufacturing InP semiconductor thin film
US4963949A (en) * 1988-09-30 1990-10-16 The United States Of America As Represented Of The United States Department Of Energy Substrate structures for InP-based devices
WO1995005667A1 (en) * 1991-03-18 1995-02-23 Spire Corporation High energy density nuclide-emitter, voltaic-junction battery
US5260621A (en) * 1991-03-18 1993-11-09 Spire Corporation High energy density nuclide-emitter, voltaic-junction battery
US5322573A (en) * 1992-10-02 1994-06-21 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration InP solar cell with window layer
US5342453A (en) * 1992-11-13 1994-08-30 Midwest Research Institute Heterojunction solar cell
US5316593A (en) * 1992-11-16 1994-05-31 Midwest Research Institute Heterojunction solar cell with passivated emitter surface
US5376185A (en) * 1993-05-12 1994-12-27 Midwest Research Institute Single-junction solar cells with the optimum band gap for terrestrial concentrator applications
JP2755185B2 (en) * 1994-11-07 1998-05-20 日本電気株式会社 SOI substrate
US5481123A (en) * 1994-12-20 1996-01-02 Honeywell Inc. Light emitting diode with improved behavior between its substrate and epitaxial layer
US5571339A (en) * 1995-04-17 1996-11-05 The Ohio State Univ. Research Found Hydrogen passivated heteroepitaxial III-V photovoltaic devices grown on lattice-mismatched substrates, and process
US6010937A (en) * 1995-09-05 2000-01-04 Spire Corporation Reduction of dislocations in a heteroepitaxial semiconductor structure
US6166318A (en) * 1998-03-03 2000-12-26 Interface Studies, Inc. Single absorber layer radiated energy conversion device
US6815736B2 (en) 2001-02-09 2004-11-09 Midwest Research Institute Isoelectronic co-doping
US6479919B1 (en) 2001-04-09 2002-11-12 Terrence L. Aselage Beta cell device using icosahedral boride compounds
US9076915B2 (en) 2010-03-08 2015-07-07 Alliance For Sustainable Energy, Llc Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices
JP5136730B2 (en) * 2011-04-27 2013-02-06 パナソニック株式会社 Method for generating power using solar cells
US8969122B2 (en) * 2011-06-14 2015-03-03 International Business Machines Corporation Processes for uniform metal semiconductor alloy formation for front side contact metallization and photovoltaic device formed therefrom
US20130068293A1 (en) * 2011-09-21 2013-03-21 National Institute Of Standards And Technology Substrate geometry for three dimensional photovoltaics fabrication
CN105247117A (en) * 2013-03-26 2016-01-13 吉坤日矿日石金属株式会社 Method for producing compound semiconductor wafer, photoelectric conversion element, and III-V compound semiconductor single crystal

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4107723A (en) * 1977-05-02 1978-08-15 Hughes Aircraft Company High bandgap window layer for GaAs solar cells and fabrication process therefor
US4227941A (en) * 1979-03-21 1980-10-14 Massachusetts Institute Of Technology Shallow-homojunction solar cells
US4278474A (en) * 1980-03-25 1981-07-14 The United States Of America As Represented By The United States Department Of Energy Device for conversion of electromagnetic radiation into electrical current
US4370510A (en) * 1980-09-26 1983-01-25 California Institute Of Technology Gallium arsenide single crystal solar cell structure and method of making
JPS58137263A (en) * 1982-02-09 1983-08-15 Nippon Telegr & Teleph Corp <Ntt> Solar cell

Also Published As

Publication number Publication date
FR2549642A1 (en) 1985-01-25
DE3426338C2 (en) 1988-03-17
US4591654A (en) 1986-05-27
DE3426338A1 (en) 1985-02-07

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse
ST Notification of lapse
ST Notification of lapse