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JPS57204181A - Gaas solar battery and manufacture thereof - Google Patents

Gaas solar battery and manufacture thereof

Info

Publication number
JPS57204181A
JPS57204181A JP56090110A JP9011081A JPS57204181A JP S57204181 A JPS57204181 A JP S57204181A JP 56090110 A JP56090110 A JP 56090110A JP 9011081 A JP9011081 A JP 9011081A JP S57204181 A JPS57204181 A JP S57204181A
Authority
JP
Japan
Prior art keywords
gaas
type
layer
manufacture
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56090110A
Other languages
Japanese (ja)
Inventor
Susumu Yoshida
Kotaro Mitsui
Takao Oda
Yoshinori Yukimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56090110A priority Critical patent/JPS57204181A/en
Publication of JPS57204181A publication Critical patent/JPS57204181A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain a GaAs solar battery with high photoelectric conversion efficiency strong to electron rays and manufacture thereof, by optimizing the carrier densities and thicknesses of a substrate and each layer in Ga1-xAlx As-GaAs hetero junction structures. CONSTITUTION:The N type GaAs substrate having carrier density of (1-20)X 10<16>/cm<3>, P type GaAs layer thereon with the thickness 0.6mum or less and P type Ga1-xAlxAs (0<X<1) layer thereon with the thickness 1mum or less ore provided. In manufacturing, crystal growing solution added with the solution of a ternary compound semiconductor, e.g. Ga, Al, As, GaAs and a II element, e.g. Zn as impurity to determine P type conductive type is made to contact this N type GaAs substrate to epitaxial-grow a P type GaAs layer further with a Ga1-xAlxAs (0<X<1) layer formed thereon.
JP56090110A 1981-06-09 1981-06-09 Gaas solar battery and manufacture thereof Pending JPS57204181A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56090110A JPS57204181A (en) 1981-06-09 1981-06-09 Gaas solar battery and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56090110A JPS57204181A (en) 1981-06-09 1981-06-09 Gaas solar battery and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57204181A true JPS57204181A (en) 1982-12-14

Family

ID=13989376

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56090110A Pending JPS57204181A (en) 1981-06-09 1981-06-09 Gaas solar battery and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57204181A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61188974A (en) * 1985-02-15 1986-08-22 Sharp Corp Gaas solar cell
JPS63127162U (en) * 1987-02-10 1988-08-19
JPH0656896B2 (en) * 1986-11-04 1994-07-27 スペクトロラブ・インコーポレーテッド Solar cell with improved electrical connection

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5140891A (en) * 1974-08-05 1976-04-06 Nasa

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5140891A (en) * 1974-08-05 1976-04-06 Nasa

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61188974A (en) * 1985-02-15 1986-08-22 Sharp Corp Gaas solar cell
JPH0656896B2 (en) * 1986-11-04 1994-07-27 スペクトロラブ・インコーポレーテッド Solar cell with improved electrical connection
JPS63127162U (en) * 1987-02-10 1988-08-19

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