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JPS57197877A - Photo detector - Google Patents

Photo detector

Info

Publication number
JPS57197877A
JPS57197877A JP56082322A JP8232281A JPS57197877A JP S57197877 A JPS57197877 A JP S57197877A JP 56082322 A JP56082322 A JP 56082322A JP 8232281 A JP8232281 A JP 8232281A JP S57197877 A JPS57197877 A JP S57197877A
Authority
JP
Japan
Prior art keywords
layer
window layer
photodetector
gasb
light absorbing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56082322A
Other languages
Japanese (ja)
Inventor
Katsuhiko Nishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56082322A priority Critical patent/JPS57197877A/en
Publication of JPS57197877A publication Critical patent/JPS57197877A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To expand a responsive wave length range by a photodetector wherein a light absorbing layer which contains Sb and a window layer comprising a mixed crystal which contains Al are laminated on a GaSb substrate. CONSTITUTION:A light absorbing layer 2 comprising either one of GaSb, InPSb, InAsSb or a mixed crystal of them is formed through epitaxial growth on GaSb substrate 1. Then a window layer 3 consisting of AlGaAsSb, AlInAsSb, AlInPSb or AlGaPSb is formed through epitaxial growth thereon. Subsequently, impurities are diffused or ion-injected into the window layer so as to form an impurity doped layer, (7 shows P-N junction), thus constituting a photodetector. By so doing, it becomes possible to attain photodetectors which have sensitivity in a wide wave length range from the visible region to the infrared region.
JP56082322A 1981-05-29 1981-05-29 Photo detector Pending JPS57197877A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56082322A JPS57197877A (en) 1981-05-29 1981-05-29 Photo detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56082322A JPS57197877A (en) 1981-05-29 1981-05-29 Photo detector

Publications (1)

Publication Number Publication Date
JPS57197877A true JPS57197877A (en) 1982-12-04

Family

ID=13771321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56082322A Pending JPS57197877A (en) 1981-05-29 1981-05-29 Photo detector

Country Status (1)

Country Link
JP (1) JPS57197877A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2775388A1 (en) * 1998-02-26 1999-08-27 Sagem INDIUM-BASED ALLOY AND INFRARED TRANSDUCER USING SUCH ALLOY
FR2800201A1 (en) * 1999-10-26 2001-04-27 Thomson Csf Photovoltaic detector comprising n and p-doped layers connected by electrodes
WO2001031685A3 (en) * 1999-10-28 2002-01-10 Hrl Lab InPSb/InAs BJT DEVICE AND METHOD OF MAKING
WO2014002082A3 (en) * 2012-06-28 2014-08-28 Elta Systems Ltd. Infrared photodetector device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320881A (en) * 1976-08-11 1978-02-25 Nippon Telegr & Teleph Corp <Ntt> Photo semiconductor device
JPS55162263A (en) * 1979-06-01 1980-12-17 Mitsubishi Electric Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320881A (en) * 1976-08-11 1978-02-25 Nippon Telegr & Teleph Corp <Ntt> Photo semiconductor device
JPS55162263A (en) * 1979-06-01 1980-12-17 Mitsubishi Electric Corp Semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2775388A1 (en) * 1998-02-26 1999-08-27 Sagem INDIUM-BASED ALLOY AND INFRARED TRANSDUCER USING SUCH ALLOY
EP0939447A1 (en) * 1998-02-26 1999-09-01 Sagem Sa Indium based alloy and infrared transducer using the same
US6274882B1 (en) 1998-02-26 2001-08-14 Sagem Sa Indium-based alloy and an infrared transducer using such an alloy
FR2800201A1 (en) * 1999-10-26 2001-04-27 Thomson Csf Photovoltaic detector comprising n and p-doped layers connected by electrodes
WO2001031685A3 (en) * 1999-10-28 2002-01-10 Hrl Lab InPSb/InAs BJT DEVICE AND METHOD OF MAKING
US6482711B1 (en) 1999-10-28 2002-11-19 Hrl Laboratories, Llc InPSb/InAs BJT device and method of making
US6806512B2 (en) 1999-10-28 2004-10-19 Hrl Laboratories, Llc InPSb/InAs BJT device and method of making
WO2014002082A3 (en) * 2012-06-28 2014-08-28 Elta Systems Ltd. Infrared photodetector device

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