JPS6432683A - Semiconductor element - Google Patents
Semiconductor elementInfo
- Publication number
- JPS6432683A JPS6432683A JP62189897A JP18989787A JPS6432683A JP S6432683 A JPS6432683 A JP S6432683A JP 62189897 A JP62189897 A JP 62189897A JP 18989787 A JP18989787 A JP 18989787A JP S6432683 A JPS6432683 A JP S6432683A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- band gap
- photo
- sensitivity
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To increase a band gap, and to improve photo-sensitivity by forming a P-type layer or an N-type layer on the light incident side constituting P-I-N structure by a composite layer in which a doped amorphous silicon layer and an amorphous silicon carbide layer are laminated. CONSTITUTION:A P-type layer on the light incident side is shaped by a composite layer 15, in which a p-a-si layer 13 containing no carbon and a p-a-siC layer 14 containing carbon are laminated, in a semiconductor element. Since the SiC layer 14 has a large band gap at that time, the photo-sensitivity of the semiconductor element can be improved. Since the SiC layer 13 having the function of a light-shielding layer, which has a small band gap but through which only light is transmitted, is shaped on the light incident side of the SiC layer 14, the photo-deterioration of an i-a-Si layer 16 is prevented. Accordingly, the band gap is increased, thus enhancing photo-sensitivity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62189897A JPS6432683A (en) | 1987-07-28 | 1987-07-28 | Semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62189897A JPS6432683A (en) | 1987-07-28 | 1987-07-28 | Semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6432683A true JPS6432683A (en) | 1989-02-02 |
Family
ID=16249019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62189897A Pending JPS6432683A (en) | 1987-07-28 | 1987-07-28 | Semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6432683A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU759459B2 (en) * | 1998-07-31 | 2003-04-17 | Matsushita Electric Industrial Co., Ltd. | Image transmission method and image transmission device for realizing the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58192387A (en) * | 1982-04-27 | 1983-11-09 | ア−ルシ−エ− コ−ポレ−シヨン | Photocell |
| JPS59163875A (en) * | 1983-03-08 | 1984-09-14 | Agency Of Ind Science & Technol | Amorphous silicon solar cell |
| JPS60242682A (en) * | 1984-05-16 | 1985-12-02 | Hitachi Maxell Ltd | Semiconductor photoelectric conversion device |
-
1987
- 1987-07-28 JP JP62189897A patent/JPS6432683A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58192387A (en) * | 1982-04-27 | 1983-11-09 | ア−ルシ−エ− コ−ポレ−シヨン | Photocell |
| JPS59163875A (en) * | 1983-03-08 | 1984-09-14 | Agency Of Ind Science & Technol | Amorphous silicon solar cell |
| JPS60242682A (en) * | 1984-05-16 | 1985-12-02 | Hitachi Maxell Ltd | Semiconductor photoelectric conversion device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU759459B2 (en) * | 1998-07-31 | 2003-04-17 | Matsushita Electric Industrial Co., Ltd. | Image transmission method and image transmission device for realizing the same |
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