JP4630986B2 - β−Ｇａ２Ｏ３系単結晶成長方法 - Google Patents

β−Ｇａ２Ｏ３系単結晶成長方法 Download PDF

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Publication number: JP4630986B2
Authority: JP; Japan
Prior art keywords: single crystal; axis; azimuth; growth method; crystal
Prior art date: 2003-02-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP2003046552A

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English (en)

Japanese (ja)

Other versions

JP2004262684A5 (zh

JP2004262684A (ja

Inventor

昇一ノ瀬

清史島村

和夫青木

ビジョラエンカルナシオンアントニアガルシア

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Waseda University

Original Assignee

Waseda University

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2003-02-24

Filing date

2003-02-24

Publication date

2011-02-09

2003-02-24 Priority to JP2003046552A priority Critical patent/JP4630986B2/ja

2003-02-24 Application filed by Waseda University filed Critical Waseda University

2004-02-16 Priority to RU2005126721/15A priority patent/RU2313623C2/ru

2004-02-16 Priority to EP04711454A priority patent/EP1598450B1/en

2004-02-16 Priority to KR1020057015608A priority patent/KR100787272B1/ko

2004-02-16 Priority to EP10011746A priority patent/EP2273569A3/en

2004-02-16 Priority to PCT/JP2004/001653 priority patent/WO2004074556A2/ja

2004-02-16 Priority to EP10011745.6A priority patent/EP2267194B1/en

2004-02-16 Priority to CNB2004800050077A priority patent/CN100370065C/zh

2004-02-16 Priority to US10/546,484 priority patent/US7393411B2/en

2004-02-16 Priority to CA002517024A priority patent/CA2517024C/en

2004-02-16 Priority to AT04711454T priority patent/ATE525498T1/de

2004-02-18 Priority to TW093103898A priority patent/TWI370804B/zh

2004-02-18 Priority to TW101114968A priority patent/TW201242901A/zh

2004-02-18 Priority to TW100131316A priority patent/TWI450865B/zh

2004-09-24 Publication of JP2004262684A publication Critical patent/JP2004262684A/ja

2006-04-20 Publication of JP2004262684A5 publication Critical patent/JP2004262684A5/ja

2008-06-12 Priority to US12/155,991 priority patent/US7713353B2/en

2010-03-15 Priority to US12/659,609 priority patent/US8262796B2/en

2011-02-09 Application granted granted Critical

2011-02-09 Publication of JP4630986B2 publication Critical patent/JP4630986B2/ja

2012-08-13 Priority to US13/572,976 priority patent/US8747553B2/en

2023-02-24 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

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Crystals, And After-Treatments Of Crystals (AREA)

JP2003046552A 2003-02-24 2003-02-24 β−Ｇａ２Ｏ３系単結晶成長方法 Expired - Lifetime JP4630986B2 (ja)

Priority Applications (17)

Application Number	Priority Date	Filing Date	Title
JP2003046552A JP4630986B2 (ja)	2003-02-24	2003-02-24	β−Ｇａ２Ｏ３系単結晶成長方法
EP04711454A EP1598450B1 (en)	2003-02-24	2004-02-16	Beta-Ga2O3 SINGLE CRYSTAL GROWING METHOD
KR1020057015608A KR100787272B1 (ko)	2003-02-24	2004-02-16	Ｇａ2Ｏ3계 발광 소자 및 그 제조 방법
EP10011746A EP2273569A3 (en)	2003-02-24	2004-02-16	Beta-Ga203 light-emitting device and its manufacturing method
PCT/JP2004/001653 WO2004074556A2 (ja)	2003-02-24	2004-02-16	β‐Ｇａ2Ｏ3系単結晶成長方法、薄膜単結晶の成長方法、Ｇａ2Ｏ3系発光素子およびその製造方法
EP10011745.6A EP2267194B1 (en)	2003-02-24	2004-02-16	Method of growing a beta-Ga2O3 single crystal thin film
CNB2004800050077A CN100370065C (zh)	2003-02-24	2004-02-16	β－Ga2O3单晶生长方法、薄膜单晶生长方法、Ga2O3发光器件及其制造方法
US10/546,484 US7393411B2 (en)	2003-02-24	2004-02-16	β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
CA002517024A CA2517024C (en)	2003-02-24	2004-02-16	.beta.-ga2o3 single crystal growing method, thin-film single crystal growing method, ga2o3 light-emitting device, and its manufacturing method
AT04711454T ATE525498T1 (de)	2003-02-24	2004-02-16	Verfahren zum ziehen von beta-ga2o3 einkristallen
RU2005126721/15A RU2313623C2 (ru)	2003-02-24	2004-02-16	СПОСОБ ВЫРАЩИВАНИЯ ТОНКОЙ МОНОКРИСТАЛЛИЧЕСКОЙ ПЛЕНКИ, СВЕТОИЗЛУЧАЮЩЕЕ УСТРОЙСТВО НА ОСНОВЕ Ga2O3 И СПОСОБ ЕГО ИЗГОТОВЛЕНИЯ
TW093103898A TWI370804B (en)	2003-02-24	2004-02-18	Ga2o3 type light meitting device and manufacturing method thereof
TW101114968A TW201242901A (en)	2003-02-24	2004-02-18	Thin film type single crystal growth method
TW100131316A TWI450865B (zh)	2003-02-24	2004-02-18	β氧化鎵系單結晶生長方法
US12/155,991 US7713353B2 (en)	2003-02-24	2008-06-12	β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
US12/659,609 US8262796B2 (en)	2003-02-24	2010-03-15	β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
US13/572,976 US8747553B2 (en)	2003-02-24	2012-08-13	β-Ga2O3 single crystal growing method including crystal growth method

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2003046552A JP4630986B2 (ja)	2003-02-24	2003-02-24	β−Ｇａ２Ｏ３系単結晶成長方法

Publications (3)

Publication Number	Publication Date
JP2004262684A JP2004262684A (ja)	2004-09-24
JP2004262684A5 JP2004262684A5 (zh)	2006-04-20
JP4630986B2 true JP4630986B2 (ja)	2011-02-09

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Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2003046552A Expired - Lifetime JP4630986B2 (ja)	2003-02-24	2003-02-24	β−Ｇａ２Ｏ３系単結晶成長方法

Country Status (2)

Country	Link
JP (1)	JP4630986B2 (zh)
CN (1)	CN100370065C (zh)

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2004
- 2004-02-16 CN CNB2004800050077A patent/CN100370065C/zh not_active Expired - Fee Related

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Also Published As

Publication number	Publication date
CN1754013A (zh)	2006-03-29
JP2004262684A (ja)	2004-09-24
CN100370065C (zh)	2008-02-20

Publication	Publication Date	Title
JP4630986B2 (ja)	2011-02-09	β−Ｇａ２Ｏ３系単結晶成長方法
KR100787272B1 (ko)	2007-12-20	Ｇａ2Ｏ3계 발광 소자 및 그 제조 방법
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