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ATE525498T1 - Verfahren zum ziehen von beta-ga2o3 einkristallen - Google Patents

Verfahren zum ziehen von beta-ga2o3 einkristallen

Info

Publication number
ATE525498T1
ATE525498T1 AT04711454T AT04711454T ATE525498T1 AT E525498 T1 ATE525498 T1 AT E525498T1 AT 04711454 T AT04711454 T AT 04711454T AT 04711454 T AT04711454 T AT 04711454T AT E525498 T1 ATE525498 T1 AT E525498T1
Authority
AT
Austria
Prior art keywords
single crystals
light
ga2o3 single
type
growing beta
Prior art date
Application number
AT04711454T
Other languages
English (en)
Inventor
Noboru Ichinose
K Shimamura
Kazuo Aoki
Villora Encarnacion Antonia Garcia
Original Assignee
Univ Waseda
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2003046552A external-priority patent/JP4630986B2/ja
Priority claimed from JP2003066020A external-priority patent/JP4565062B2/ja
Priority claimed from JP2003137916A external-priority patent/JP4020314B2/ja
Application filed by Univ Waseda filed Critical Univ Waseda
Application granted granted Critical
Publication of ATE525498T1 publication Critical patent/ATE525498T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02414—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
AT04711454T 2003-02-24 2004-02-16 Verfahren zum ziehen von beta-ga2o3 einkristallen ATE525498T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003046552A JP4630986B2 (ja) 2003-02-24 2003-02-24 β−Ｇａ２Ｏ３系単結晶成長方法
JP2003066020A JP4565062B2 (ja) 2003-03-12 2003-03-12 薄膜単結晶の成長方法
JP2003137916A JP4020314B2 (ja) 2003-05-15 2003-05-15 Ｇａ２Ｏ３系発光素子およびその製造方法
PCT/JP2004/001653 WO2004074556A2 (ja) 2003-02-24 2004-02-16 β‐Ｇａ2Ｏ3系単結晶成長方法、薄膜単結晶の成長方法、Ｇａ2Ｏ3系発光素子およびその製造方法

Publications (1)

Publication Number Publication Date
ATE525498T1 true ATE525498T1 (de) 2011-10-15

Family

ID=32912842

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04711454T ATE525498T1 (de) 2003-02-24 2004-02-16 Verfahren zum ziehen von beta-ga2o3 einkristallen

Country Status (8)

Country Link
US (4) US7393411B2 (de)
EP (3) EP2273569A3 (de)
KR (1) KR100787272B1 (de)
AT (1) ATE525498T1 (de)
CA (1) CA2517024C (de)
RU (1) RU2313623C2 (de)
TW (3) TW201242901A (de)
WO (1) WO2004074556A2 (de)

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EP1598450A2 (de) 2005-11-23
EP2267194A2 (de) 2010-12-29
RU2313623C2 (ru) 2007-12-27
KR100787272B1 (ko) 2007-12-20
US20120304918A1 (en) 2012-12-06
TW200424128A (en) 2004-11-16
TWI450865B (zh) 2014-09-01
US8262796B2 (en) 2012-09-11
CA2517024A1 (en) 2004-09-02
US8747553B2 (en) 2014-06-10
US20060150891A1 (en) 2006-07-13
US7713353B2 (en) 2010-05-11
TWI370804B (en) 2012-08-21
EP2267194B1 (de) 2013-04-17
EP2273569A3 (de) 2011-03-02
TW201242901A (en) 2012-11-01
RU2005126721A (ru) 2006-02-10
US20100229789A1 (en) 2010-09-16
EP2267194A3 (de) 2011-10-19
CA2517024C (en) 2009-12-01
KR20060007366A (ko) 2006-01-24
EP1598450A4 (de) 2008-04-23
EP2273569A2 (de) 2011-01-12
TW201144227A (en) 2011-12-16
US20080265264A1 (en) 2008-10-30
EP1598450B1 (de) 2011-09-21
US7393411B2 (en) 2008-07-01
WO2004074556A2 (ja) 2004-09-02
WO2004074556A3 (ja) 2004-11-11

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