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JP2930904B2 - 樹脂モールド被覆を備えた半導体デバイス及びその製造方法 - Google Patents

樹脂モールド被覆を備えた半導体デバイス及びその製造方法

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Publication number
JP2930904B2
JP2930904B2 JP8083046A JP8304696A JP2930904B2 JP 2930904 B2 JP2930904 B2 JP 2930904B2 JP 8083046 A JP8083046 A JP 8083046A JP 8304696 A JP8304696 A JP 8304696A JP 2930904 B2 JP2930904 B2 JP 2930904B2
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JP
Japan
Prior art keywords
semiconductor chip
semiconductor device
semiconductor
metal
metal electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP8083046A
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English (en)
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JPH08264683A (ja
Inventor
ブルンナー ヘルベルト
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
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Siemens AG
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Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPH08264683A publication Critical patent/JPH08264683A/ja
Application granted granted Critical
Publication of JP2930904B2 publication Critical patent/JP2930904B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/183—Connection portion, e.g. seal
    • H01L2924/18301—Connection portion, e.g. seal being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Microelectronics & Electronic Packaging (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Light Receiving Elements (AREA)

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】この発明は、少なくとも１つ
の金属電極を備えた半導体チップに樹脂モールド被覆が
接している半導体デバイスに関する。
【０００２】
【従来の技術】このような半導体デバイスは例えばドイ
ツ連邦共和国特許出願公開第４３２７１３３号明細書に
より公知である。この明細書には、発光ダイオードが光
透過性の樹脂モールド被覆を介して光検出半導体チップ
と光結合されている半導体デバイスが記載されている。
光透過性の樹脂モールド被覆は発光ダイオード及び光検
出半導体チップの表面に直接設けられている。
【０００３】例えばエポキシ樹脂のような公知のモール
ド被覆樹脂と半導体材料の熱膨張率は非常に異なってい
る（例えば、αｔｈ（エポキシ樹脂）＝６０〜２００＊
１０-6Ｋ-1、αｔｈ（ＧａＡｓ）＝６＊１０-6Ｋ-1、α
ｔｈ（Ｓｉ）＝２．５＊１０-6Ｋ-1）。従って、通常、
半導体デバイスの使用中に生ずる温度変動の際半導体デ
バイスには機械的な応力が発生する。時間の経過ととも
にこの機械的応力負荷、従ってこれに伴う半導体チップ
とモールド樹脂との間の境界面におけるせん断応力によ
り樹脂モールド被覆が半導体チップから剥離することが
ある。樹脂モールド被覆の剥離はしかしながら多くの場
合半導体デバイスの機能特性の明らかな劣化をもたら
す。例えば光信号を送信及び／又は受信するための半導
体デバイスにおいては半導体チップからの樹脂モールド
被覆の剥離は著しい光損失を招く。
【０００４】従って、半導体チップと樹脂モールド被覆
との間の接着強度を高める対策が必要となる。
【０００５】半導体チップと樹脂モールド被覆との間の
接着強度を高めるための公知の対策としては、 ・樹脂モールド被覆材料の熱膨張率を適合させる、 ・半導体表面を、例えばプラズマ浄化により活性化す
る、 ・半導体チップと樹脂モールド被覆との間に中間層を設
ける、等の方法がある。
【０００６】例えばエポキシ樹脂のような樹脂モールド
被覆材料の熱膨張率を適当に整合させることは、従来、
充填材を添加することによって行われていた。公知の充
填材は金属粉末、金属酸化物、金属炭酸塩及び金属珪酸
塩である。しかしこのような充填材は熱膨張率の他に樹
脂モールド被覆材料の光透過性をも損なうので、このよ
うな充填材の使用はこれらの特性が余り重要でない役割
を果たしている場合にしか可能でない。
【０００７】また、半導体表面を活性化すること或いは
半導体表面と樹脂モールド被覆との間に接着仲介層とし
て中間層を設けることも、このために付加的な面倒な工
程が必要であるという欠点を伴う。
【０００８】
【発明が解決しようとする課題】従って、本発明の課題
は、上述のような対策のいずれをも必要とせずに、半導
体チップと樹脂モールド被覆との間の接着力が大きい半
導体デバイスを開発することにある。
【０００９】
【課題を解決するための手段】この課題を解決するため
本発明によれば、表面を有する光送信又は光受信半導体
チップと、前記半導体チップの前記表面の少なくとも１
つの部分領域を覆う少なくとも１つの金属電極と、前記
半導体チップの前記表面の前記少なくとも１つの金属電
極で覆われない少なくとも１つの部分領域と、前記少な
くとも１つの金属電極を有する前記半導体チップを覆う
樹脂モールド被覆とを備え、前記半導体チップの前記表
面の金属電極で覆われない少なくとも１つの部分領域は
極小歯構造を形成する粗面部を有し、前記樹脂モールド
被覆は前記半導体チップの前記極小歯構造と噛み合う粗
面部を有し、前記半導体チップと前記樹脂モールド被覆
との間の光伝送損失を減少せしめたものである。
【００１０】このような極小歯構造によって、一方で
は、半導体チップの表面が樹脂モールド被覆に接してい
る面が増大される。他方では、極小歯構造は機械的応力
を半導体チップ及び樹脂モールド被覆の中に分散するよ
うに働く。この２つの要因により半導体チップ及び樹脂
モールド被覆の間の接触面におけるせん断応力の有効な
減少が達成される。
【００１１】
【実施例】この発明を図面に示す実施例を参照して詳細
に説明する。図１はこの発明による半導体デバイス、例
えば発光ダイオードの断面を示す。
【００１２】システム基板の接続導体片１に、その上面
及び下面にそれぞれ１つの金属電極３、４を備えた半導
体チップ２が配置されている。半導体チップ２は例えば
ＡｌｘＧａ１−ｘＡｓ、ＩｎｘＧａ１−ｘＡｓ、Ｓｉ或
いはＳｉＣからなる。金属電極３、４はアルミニウム、
アルミニウムベース合金或いは他の非貴金属金属材料か
らなる。半導体チップ２は金属電極３、４を備えていな
い表面に例えばエッチングにより作られる歯構造５を備
えている。金属電極３は例えばＰｂ／Ｓｎろうにより接
続導体片１に電気的に接続されている。金属電極４はボ
ンディングワイヤ６、例えば金導線により接続導体片７
に電気的に接続されている。半導体チップ２、金属電極
３、４、ボンディングワイヤ６及び接続導体片１、７の
部分領域は光透過性の例えばエポキシ樹脂からなる樹脂
モールド被覆８により囲まれている。
【００１３】極小歯構造５により半導体チップ２への樹
脂モールド被覆８の接着強度が改善されるとともに、光
送信及び／又は受信半導体チップの場合、半導体チップ
２と樹脂モールド被覆８との間の境界面における全反射
損失が減少することにより光の結合及び／又は減結合も
改善される。
【００１４】上述の半導体デバイスの製造方法は例えば
以下の連続工程により行われる。 ａ）半導体チップ２、例えば発光ダイオード或いはフォ
トダイオードを製造する。 ｂ）金属電極３、４を例えば蒸着により形成する。 ｃ）極小歯構造５を例えば半導体チップ２の表面をエッ
チングすることにより形成する。 ｄ）金属電極３、４及び極小歯構造５を備えた半導体チ
ップ２を接続導体片１或いはシステム基板の島に、例え
ば接着或いはろう付けにより接合する。 ｅ）リード線６を金属電極４及び接続導体片７にボンデ
ィング接続する。 ｆ）極小歯構造５、金属電極３、４を備えた半導体チッ
プ２、リード線６及び接続導体片１、７の部分領域をモ
ールド樹脂で被覆する。このモールド樹脂での被覆は、
モールド樹脂が極小歯構造５の中に侵入し、この部分を
満たし次いで硬化するように行われる。これにより極小
歯構造５が半導体チップ２と樹脂モールド被覆８との間
に形成される。モールド被覆方法としては例えば射出成
形が使用される。
【００１５】極小歯構造５を、例えば１つ或いは複数の
ＡｌｘＧａ１−ｘＡｓの膜（０≦ｘ≦１）からなり、非
貴金属金属材料、例えばアルミニウム或いはアルミニウ
ムベース合金のような材料からなる金属電極３、４を備
えた半導体チップ２の上に形成する方法は、例えば次の
連続工程により行われる。 ａ）半導体チップ２の表面を、場合によっては市販の洗
剤を加えて、親水性の半導体表面を形成するために予備
洗浄する。 ｂ）半導体チップ２の表面を例えば硝酸（６５％）でエ
ッチングする。このときアルミニウムの含有量ｘに応じ
てエッチングのための温度及びエッチング時間を整合さ
せる必要がある。アルミニウムの含有量が０．３０≦ｘ
≦０．４に対してエッチング時間は温度２５±５℃のと
き例えば１５乃至３０秒である。
【００１６】さらに、極小歯構造５を、例えば１つ或い
は複数のＡｌｘＧａ１−ｘＡｓの膜（０≦ｘ≦０．４）
からなり、非貴金金属材料、例えばアルミニウム或いは
アルミニウムベース合金のような材料からなる金属電極
３、４を備えた半導体チップ２の上に形成する他の方法
は、例えば次の連続工程を備える。 ａ）半導体チップ２を製造する。 ｂ）金属電極３、４を形成する。 ｃ）半導体チップ２の表面を、場合によっては市販の洗
剤を加えて、親水性の半導体表面を形成するために例え
ば水洗により予備洗浄する。 ｄ）過酸化水（≧３０％）及びフッ酸（≧４０％）から
なる混合エッチング液（１０００：６）で１乃至２．５
分間粗面化エッチングする。 ｅ）希釈鉱物酸、例えば硫酸（１５％）で、３５℃で１
乃至２分間再エッチングする。
【００１７】アルミニウムの含有量ｘに応じて粗面化エ
ッチングは温度及びエッチング時間を整合させる必要が
ある。
【図面の簡単な説明】
【図１】この発明による半導体デバイスの概略断面図。
【符号の説明】
１、７ システム基板の接続導体片 ２ 半導体チップ ３、４ 金属電極 ５ 極小歯構造 ６ リード線（ボンディングワイヤ） ８ 樹脂モールド被覆
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 23/28 - 23/30 H01L 21/56

Claims (6)

    (57)【特許請求の範囲】
  1. 【請求項１】表面を有する光送信又は光受信半導体チッ
    プと、前記半導体チップの前記表面の少なくとも１つの
    部分領域を覆う少なくとも１つの金属電極と、前記半導
    体チップの前記表面の前記少なくとも１つの金属電極で
    覆われない少なくとも１つの部分領域と、前記少なくと
    も１つの金属電極を有する前記半導体チップを覆う樹脂
    モールド被覆とを備え、前記半導体チップの前記表面の
    金属電極で覆われない少なくとも１つの部分領域は極小
    歯構造を形成する粗面部を有し、前記樹脂モールド被覆
    は前記半導体チップの前記極小歯構造と噛み合う粗面部
    を有し、前記半導体チップと前記樹脂モールド被覆との
    間の光伝送損失を減少せしめたことを特徴とする半導体
    デバイス。
  2. 【請求項２】金属電極（３）がアルミニウムを含むこと
    を特徴とする請求項１記載の半導体デバイス。
  3. 【請求項３】金属電極（３）がアルミニウムベース合金
    からなることを特徴とする請求項１又は２記載の半導体
    デバイス。
  4. 【請求項４】以下の工程、 ａ）半導体チップ（２）を製造する、 ｂ）半導体チップ（２）に金属電極（３、４）を形成す
    る、 ｃ）半導体チップ（２）の金属電極が設けられていない
    表面上に極小歯構造（５）を作るため金属電極が設けら
    れていない表面をエッチングする、 ｄ）金属電極（３、４）及び極小歯構造（５）を備えた
    半導体チップ（２）をシステム基板の上に取り付ける、 ｅ）１つ或いは複数本のリード線（６）を金属電極
    （４）及びシステム基板の接続導体片（１、７）にボン
    ディング接続する、 ｆ）半導体チップ（２）、金属電極（３、４）、リード
    線（６）、接続導体片（１、７）の部分領域及び少なく
    ともシステム基板の部分領域を、モールド樹脂が極小歯
    構造（５）に侵入してこれを満たし、次いで硬化するよ
    うに、モールド樹脂で覆う、 を含むことを特徴とする請求項１ないし３のいずれか１
    つに記載の半導体デバイスの製造方法。
  5. 【請求項５】１つ又は複数のＡｌｘＧａ１−ｘＡｓ層
    （０≦ｘ≦１）及び非貴金属金属材料からなる金属電極
    （３、４）を有する半導体チップ（２）を備えた半導体
    デバイスを製造するための方法において、次の工程、 ａ）半導体チップ（２）の表面を、親水性の半導体表面
    を形成するために予備洗浄する、 ｂ）半導体チップ（２）の表面を硝酸（６５％）でエッ
    チングする、 を含むことを特徴とする請求項４記載の半導体デバイス
    の製造方法。
  6. 【請求項６】１つ又は複数のＡｌｘＧａ１−ｘＡｓ層
    （０≦ｘ≦０．４）及び非貴金属金属材料からなる金属
    電極（３、４）を有する半導体チップ（２）を備えた半
    導体デバイスを製造するための方法において、次の工
    程、 ａ）半導体チップ（２）の表面を、親水性の半導体表面
    を形成するために予備洗浄する、 ｂ）過酸化水（≧３０％）及びフッ酸（≧４０％）から
    なる混合エッチング液（１０００：６）で１ないし２．
    ５分間粗面化エッチングする、 ｃ）希釈鉱物酸で再エッチングする、 を含むことを特徴とする請求項４記載の半導体デバイス
    の製造方法。
JP8083046A 1995-03-15 1996-03-13 樹脂モールド被覆を備えた半導体デバイス及びその製造方法 Expired - Lifetime JP2930904B2 (ja)

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DE19509262A1 (de) 1996-09-19
JPH08264683A (ja) 1996-10-11
CN1138216A (zh) 1996-12-18
EP0732740A3 (de) 1998-09-16
DE19509262C2 (de) 2001-11-29
CN1280900C (zh) 2006-10-18
CN1905169A (zh) 2007-01-31
US5742098A (en) 1998-04-21
EP0732740A2 (de) 1996-09-18

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