JP2727620B2 - Organic thin film EL device - Google Patents
Organic thin film EL deviceInfo
- Publication number
- JP2727620B2 JP2727620B2 JP1020792A JP2079289A JP2727620B2 JP 2727620 B2 JP2727620 B2 JP 2727620B2 JP 1020792 A JP1020792 A JP 1020792A JP 2079289 A JP2079289 A JP 2079289A JP 2727620 B2 JP2727620 B2 JP 2727620B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- organic
- organic thin
- layer
- hole injection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title claims description 52
- -1 polysilylene Polymers 0.000 claims description 21
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 16
- 150000001875 compounds Chemical class 0.000 claims description 7
- 125000003545 alkoxy group Chemical group 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 125000003118 aryl group Chemical group 0.000 claims description 2
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 2
- 125000000547 substituted alkyl group Chemical group 0.000 claims description 2
- 125000003107 substituted aryl group Chemical group 0.000 claims description 2
- 125000005346 substituted cycloalkyl group Chemical group 0.000 claims description 2
- 238000002347 injection Methods 0.000 description 26
- 239000007924 injection Substances 0.000 description 26
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- ZOKIJILZFXPFTO-UHFFFAOYSA-N 4-methyl-n-[4-[1-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C1(CCCCC1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZOKIJILZFXPFTO-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000004697 chelate complex Chemical class 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- LAQFLZHBVPULPL-UHFFFAOYSA-N methyl(phenyl)silicon Chemical group C[Si]C1=CC=CC=C1 LAQFLZHBVPULPL-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical group C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 1
- VRUKENOGLFMZNY-UHFFFAOYSA-N n-cyclohexyl-n-phenylaniline Chemical compound C1CCCCC1N(C=1C=CC=CC=1)C1=CC=CC=C1 VRUKENOGLFMZNY-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 125000000286 phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は平面光源やディスプレイに使用される有機薄
膜EL素子に関するものである。Description: TECHNICAL FIELD The present invention relates to an organic thin-film EL device used for a flat light source or a display.
［従来の技術］ 有機物質を原料としたEL（電界発光）素子は、安価な
大面積フルカラー表示素子を実現するものとして注目を
集めている。例えばアントラセンやペリレン等の縮合多
環芳香族系を原料としてLB法や真空蒸着法等で薄膜化し
た直流駆動の有機薄膜EL素子が製造され、その発光特性
が研究されている。しかし、従来の有機薄膜EL素子は駆
動電圧が高く、かつその発光輝度・効率が無機薄膜EL素
子のそれと比べて低かった。また、発光特性の劣化も著
しく、実用レベルのものではできなかった。[Prior Art] An EL (electroluminescence) element using an organic substance as a raw material has attracted attention as an inexpensive large-area full-color display element. For example, a direct current driven organic thin film EL device thinned by an LB method or a vacuum evaporation method using a condensed polycyclic aromatic system such as anthracene or perylene as a raw material has been manufactured, and the light emission characteristics thereof have been studied. However, the driving voltage of the conventional organic thin-film EL device is high, and the emission luminance and efficiency are lower than those of the inorganic thin-film EL device. In addition, the light emission characteristics deteriorated remarkably and could not be achieved at a practical level.
ところが、最近、有機薄膜を２層構造にした新しいタ
イプの有機薄膜EL素子が報告され、強い関心を集めてい
る（アプライド・フィジックス・レターズ、51巻、913
ページ、1987年参照）。報告によれば、この有機薄膜EL
素子は、第２図に示すように、強い蛍光を発する金属キ
レート錯体を有機蛍光体薄膜層24に使用し、アミン系材
料を正孔伝導性有機物の正孔注入層23に使用して２層構
造とし、これらを透明電極22および背面電極25で挟むこ
とにより、明るい緑色発光を得たことが開示されてお
り、６〜7Vの直流電圧印加で数100cd/m2の輝度を得てい
る。また、最大発光効率は1.5m/Wと、実用レベルに近
い性能を持っている。However, recently, a new type of organic thin film EL device having an organic thin film having a two-layer structure has been reported and has attracted a great deal of interest (Applied Physics Letters, Vol. 51, 913).
1987). According to reports, this organic thin film EL
As shown in FIG. 2, the device has a two-layer structure in which a metal chelate complex emitting strong fluorescence is used for the organic phosphor thin film layer 24 and an amine-based material is used for the hole injection layer 23 made of a hole conductive organic material. It is disclosed that bright green light emission was obtained by sandwiching the transparent electrode 22 and the back electrode 25 between the transparent electrode 22 and the back electrode 25. A luminance of several hundred cd / m 2 was obtained by applying a DC voltage of 6 to 7V. The maximum luminous efficiency is 1.5m / W, which is close to the practical level.
［発明が解決しようとする課題］ 前述したように、有機蛍光体薄膜と有機物の正孔注入
層とが２層積層した構造を有する新しい有機薄膜EL素子
は、最大発光輝度が1000cd/m2以上の明るい緑色発光を
示す。この素子は電流駆動型であるために、上記の輝度
を得るためには100mA/cm2以上の電流を流さなければな
らない。[Problems to be Solved by the Invention] As described above, a new organic thin film EL device having a structure in which an organic phosphor thin film and an organic hole injection layer are stacked in two layers has a maximum emission luminance of 1000 cd / m 2 or more. Shows bright green light emission. Since this element is of a current-driven type, a current of 100 mA / cm 2 or more must be passed to obtain the above luminance.
しかし、従来使用していた有機物の正孔注入層では安
定して充分な電流を流すことができなかった。これは通
電とともに正孔注入層が劣化し、その結果、正孔が有機
蛍光体層に注入されにくくなるためである。また、電力
損（ジュール熱）の増大で、素子の発光効率低下を招い
ていた。更に、この有機薄膜EL素子のジュール熱で発光
輝度の劣化速度が加速されていた。However, the organic hole injection layer used conventionally could not supply a sufficient current stably. This is because the hole injection layer is degraded with energization, and as a result, holes are less likely to be injected into the organic phosphor layer. In addition, an increase in power loss (Joule heat) has led to a decrease in luminous efficiency of the device. Further, the rate of deterioration of the light emission luminance was accelerated by the Joule heat of the organic thin film EL element.
本発明は、以上述べたような従来の事情に鑑みてなさ
れたもので、素子発光効率が向上し、発光輝度の劣化速
度が低下した有機薄膜EL素子を提供することを目的とす
る。The present invention has been made in view of the above-described conventional circumstances, and an object of the present invention is to provide an organic thin-film EL device in which the light-emitting efficiency of the device is improved and the rate of deterioration of the light emission luminance is reduced.
［課題を解決するための手段］ 本発明は、少なくとも一方が透明である一対の電極間
に、少なくとも有機正孔注入層と有機蛍光体薄膜層が積
層されてなる有機薄膜EL素子において、有機正孔注入層
が、一般式； （式中、R1およびR2はそれぞれ同一でも異なっていても
よく、アルキル基、アリール基、シクロアルキル基、置
換アルキル基、置換アリール基、置換シクロアルキル基
またはアルコキシ基を示す）の１種または２種以上を構
造単位して有するポリシリレン化合物を含む有機正孔伝
導性薄膜からなることを特徴とする有機薄膜EL素子であ
る。[Means for Solving the Problems] The present invention provides an organic thin film EL device comprising at least an organic hole injection layer and an organic phosphor thin film layer laminated between a pair of electrodes, at least one of which is transparent. A hole injection layer having a general formula; (Wherein R 1 and R 2 may be the same or different and each represents an alkyl group, an aryl group, a cycloalkyl group, a substituted alkyl group, a substituted aryl group, a substituted cycloalkyl group or an alkoxy group) Or an organic thin film EL device comprising an organic hole conductive thin film containing a polysilylene compound having two or more structural units.
本発明で用いられるポリシリレン化合物は、平均分子
量が30,000〜80,000、重合度が200〜600のものが好まし
い。The polysilylene compound used in the present invention preferably has an average molecular weight of 30,000 to 80,000 and a degree of polymerization of 200 to 600.
また、ポリシリレン化合物の具体的な例としては、ポ
リ（メチルフェニルシリレン）、ポリ（メチルフェニル
シリレン−コージメチルシリレン）、ポリ（シクロヘキ
シルメチルシリレン）、ポリ（ｔ−ブチルメチルシリレ
ン）、ポリ（フェニルエチルシリレン）、ポリ（ｎ−プ
ロピルメチルシリレン）、ポリ（ｐ−トリルメチルシリ
レン）、ポリ（シクロトリメチレンシリレン）、ポリ
（シクロテトラメチレンシリレン）、ポリ（シクロペン
タメチレンシリレン）、ポリ（ジ−ｔ−ブチルシリレン
−コージメチルシリレン）、ポリ（ジフェニルシリレン
−コージメチルシリレン）、ポリ（シアノエチルメチル
シリレン）、ポリ（２−アセトキシエチルメチルシリレ
ン）、ポリ（２−カルボメトキシエチルメチルシリレ
ン）、ポリ（フェニルメチルシリレン）等がある。有機
正孔伝導性薄膜中には、上記のポリシリレン化合物の他
に、例えば、1,1−ビス−（４−ジ−ｐ−トリルアミノ
フェニル）シクロヘキサン、4,4′−ビス（ジフェニル
アミノ）クオドリフェニル、N,N,N−トリス（ｐ−トリ
ス）アミン、オクサジアゾール等を適当な割合で混合し
たものでもよい。有機正孔伝導性薄膜の膜厚は100Å以
上であることが好ましい。Specific examples of the polysilylene compound include poly (methylphenylsilylene), poly (methylphenylsilylene-codimethylsilylene), poly (cyclohexylmethylsilylene), poly (t-butylmethylsilylene), and poly (phenylethyl). (Silylene), poly (n-propylmethylsilylene), poly (p-tolylmethylsilylene), poly (cyclotrimethylenesilylene), poly (cyclotetramethylenesilylene), poly (cyclopentamethylenesilylene), poly (di-t) -Butylsilylene-codimethylsilylene), poly (diphenylsilylene-codimethylsilylene), poly (cyanoethylmethylsilylene), poly (2-acetoxyethylmethylsilylene), poly (2-carbomethoxyethylmethylsilylene), poly (phenylmethylsilylene) Rushiriren), and the like. In the organic hole conductive thin film, in addition to the above polysilylene compound, for example, 1,1-bis- (4-di-p-tolylaminophenyl) cyclohexane, 4,4'-bis (diphenylamino) cyclohexane It may be a mixture of odoriphenyl, N, N, N-tris (p-tris) amine, oxadiazole and the like at an appropriate ratio. The thickness of the organic hole conductive thin film is preferably 100 ° or more.
本発明による有機薄膜EL素子は、第１図にその基本的
構成を示すように、透明なガラス基板１上に、透明でか
つ正孔注入電極であるITO透明電極２が形成され、該電
極上に有機正孔注入層としてポリシリレン薄膜層３が形
成され、ITO透明電極２からの正孔注入効率および正孔
注入層内の輸送効率が高められている。ポリシリレン薄
膜層３上には有機蛍光体薄膜層４および背面電極５が形
成されて本発明の有機薄膜EL素子が構成されている。ま
た、本発明の有機薄膜EL素子は、有機蛍光体薄膜と背面
電極の間に有機電極注入層を設置した、いわゆる３層構
造の有機薄膜EL素子であってもよい。As shown in FIG. 1, the organic thin-film EL device according to the present invention has a transparent glass substrate 1 on which a transparent and hole-injecting ITO transparent electrode 2 is formed. Then, a polysilylene thin film layer 3 is formed as an organic hole injection layer, and the hole injection efficiency from the ITO transparent electrode 2 and the transport efficiency in the hole injection layer are enhanced. An organic phosphor thin film layer 4 and a back electrode 5 are formed on the polysilylene thin film layer 3 to constitute the organic thin film EL device of the present invention. The organic thin film EL device of the present invention may be a so-called three-layer organic thin film EL device in which an organic electrode injection layer is provided between the organic phosphor thin film and the back electrode.
本発明による有機薄膜EL素子は、従来のものに比べ、
効率は２から５倍改善される。また、従来よりも発光効
率が改善されただけ、ジュール熱の発生量が少なくな
り、この結果、素子の発熱に伴う発光特性の劣化も少な
くなる。The organic thin film EL device according to the present invention is
Efficiency is improved by a factor of 2-5. Further, since the luminous efficiency is improved as compared with the conventional case, the generation amount of Joule heat is reduced, and as a result, the deterioration of the luminescent characteristics due to the heat generation of the element is also reduced.
［作用］ ２層構造の有機薄膜EL素子の発光メカニズムは次のよ
うであると考えられている。即ち、ITO等の正孔注入電
極から正孔注入層に正孔が注入され、その層を伝導して
有機蛍光体薄膜層に正孔が注入される。一方、仕事関数
の低い金属を主体とした電子注入電極から電子が有機蛍
光体薄膜層に注入される。注入された電子は有機蛍光体
薄膜層を伝導し、正孔注入層との界面で正孔と再結合し
て一重項励起子を生成する。この結果、有機蛍光体層よ
り発光が生じる。[Effect] The light emission mechanism of the organic thin film EL device having the two-layer structure is considered to be as follows. That is, holes are injected into the hole injection layer from a hole injection electrode such as ITO, and the holes are injected into the organic phosphor thin film layer through the layer. On the other hand, electrons are injected into the organic phosphor thin film layer from an electron injection electrode mainly composed of a metal having a low work function. The injected electrons conduct through the organic phosphor thin film layer and recombine with holes at the interface with the hole injection layer to generate singlet excitons. As a result, light is emitted from the organic phosphor layer.
有機薄膜EL素子の発光効率を向上させるには、電荷注
入効率、電荷の輸送効率、励起子生成および発光遷移確
率を高めることが重要である。特に素子の印加電圧が高
くなると有機蛍光体薄膜層と正孔注入層の界面での再結
合、即ち励起子生成効率が低下するので低電圧で正孔の
注入および輸送効率を改善させることが重要である。従
来の素子で特に問題であった点は、通電とともに有機正
孔注入層が劣化さ、その結果、正孔の注入および輸送効
率が低下したことである。その結果、正孔注入層の抵抗
が増大し、このことが駆動電圧の上昇およびジュール熱
の増大などの問題を引き起こすことになる。In order to improve the luminous efficiency of the organic thin film EL device, it is important to increase the charge injection efficiency, the charge transport efficiency, the exciton generation and the luminescence transition probability. In particular, when the applied voltage of the device increases, recombination at the interface between the organic phosphor thin film layer and the hole injection layer, that is, the exciton generation efficiency decreases. Therefore, it is important to improve the hole injection and transport efficiency at a low voltage. It is. A particular problem with the conventional device is that the organic hole injection layer deteriorates with the passage of current, and as a result, hole injection and transport efficiency decreases. As a result, the resistance of the hole injection layer increases, which causes problems such as an increase in drive voltage and an increase in Joule heat.
本発明においては、有機正孔注入層の材料としてポリ
シリレン化合物薄膜を用いることにより、正孔の注入効
率および正孔注入層内の輸送効率が高められ、その結
果、良好な特性を有する有機薄膜EL素子を得ることがで
きる。In the present invention, by using a polysilylene compound thin film as a material of the organic hole injection layer, the hole injection efficiency and the transport efficiency in the hole injection layer are improved, and as a result, the organic thin film EL having good characteristics An element can be obtained.
［実施例］ 次に本発明の実施例について詳細に説明する。[Example] Next, an example of the present invention will be described in detail.
第１図は本発明の一実施例の概略断面図である。第１
図に示すように、ガラス基板１上にITO透明電極２を形
成てからポリ（メチルフェニルシリレン）約60重量％に
N,N,N′,N′−テトラフェニル−4,4′−ジアミノビフェ
ニルを約40重量％混合したポリシリレン薄膜層３を1500
Å、トルエン溶媒を使用したディップコーティング法で
形成した。その後、有機蛍光体薄膜層４を500Å、10-6T
orrの真空中で蒸着して形成した。ここで、有機蛍光体
としては、トリス（８−ハイドロキシキノリン）アルミ
ニウムを用いた。最後に、MgとAgを10:1で混合した合金
の背面金属電極５を電子ビーム蒸着法で1500Å形成して
有機薄膜EL素子が完成する。FIG. 1 is a schematic sectional view of one embodiment of the present invention. First
As shown in the figure, after forming an ITO transparent electrode 2 on a glass substrate 1, the poly (methylphenylsilylene) is reduced to about 60% by weight.
N, N, N ', N'-tetraphenyl-4,4'-diaminobiphenyl was mixed with about 40% by weight of a polysilylene thin film layer 3 of 1500.
Å, formed by a dip coating method using a toluene solvent. Thereafter, the organic phosphor thin film layer 4 is coated with 500Å, 10 -6 T
It was formed by vapor deposition in orr vacuum. Here, tris (8-hydroxyquinoline) aluminum was used as the organic phosphor. Finally, a back metal electrode 5 of an alloy in which Mg and Ag are mixed at a ratio of 10: 1 is formed by electron beam evaporation at a thickness of 1500 ° to complete an organic thin film EL device.
この素子の発光特性を乾燥窒素中で測定したところ、
約8Vの直流電圧の印加で300cd/m2の発光が得られた。従
来の素子に比べ、発光輝度・効率が２から５倍改善され
ている。この有機薄膜EL素子を電流密度0.5mA/cm2の状
態でエージング試験をしたところ、輝度半減時間は1000
時間以上であった。従来の電子では100から300時間であ
ったから、この素子の信頼性は大幅に改善されている。When the light emission characteristics of this device were measured in dry nitrogen,
When a DC voltage of about 8 V was applied, light emission of 300 cd / m 2 was obtained. The emission luminance and efficiency are improved 2 to 5 times as compared with the conventional device. When an aging test was performed on this organic thin film EL device at a current density of 0.5 mA / cm 2 , the luminance half-life was 1000
It was more than an hour. With 100 to 300 hours for conventional electrons, the reliability of this device is greatly improved.
なお、ポリ（メチルフェニルシリレン−コージメチル
シリレン）等のみを単独で用い、アミン類を混合してい
ないポリシリレン薄膜でも同様な効果が認められた。Note that the same effect was observed in a polysilylene thin film using only poly (methylphenylsilylene-codimethylsilylene) or the like alone and containing no amines.
また、本発明の素子はトリス（８−ハイドロキシキノ
リン）アルミニウム有機蛍光体を用いた場合ばかりでな
く、他の有機蛍光体を用いた場合でも同様な効果が認め
られた。透明電極はITO以外にSnO2:Sb、ZnO:AlやAuなど
でもよい。The same effect was observed in the device of the present invention not only when the organic phosphor of tris (8-hydroxyquinoline) aluminum was used but also when other organic phosphors were used. The transparent electrode may be made of SnO 2 : Sb, ZnO: Al, Au or the like in addition to ITO.
このように本発明で重要な点は、透明な正孔注入層と
してポリシリレン化合物を含む材料よりなる薄膜を用い
ることを特徴とした有機薄膜EL素子であり、正孔注入層
以外の素子を構成する材料そのものを限定するものでは
ない。As described above, an important point in the present invention is an organic thin-film EL element characterized by using a thin film made of a material containing a polysilylene compound as a transparent hole-injection layer, which constitutes an element other than the hole-injection layer. It does not limit the material itself.
［発明の効果］ 以上説明したように、本発明によれば発光特性および
信頼性が大幅に改善された有機薄膜EL素子が提供され
る。[Effects of the Invention] As described above, according to the present invention, an organic thin-film EL device having significantly improved light-emitting characteristics and reliability is provided.
このように、本発明により有機薄膜EL素子を実用レベ
ルまで引き上げることができ、その工業的価値は高い。As described above, the present invention makes it possible to raise the organic thin film EL element to a practical level, and its industrial value is high.
第１図は本発明の一実施例の概略断面図、第２図は従来
の有機薄膜EL素子の概略断面図である。 1,21……ガラス基板 2,22……ITO透明電極 ３……ポリシリレン薄膜層 4,24……有機蛍光体薄膜層 5,25……背面電極 23……有機正孔注入層FIG. 1 is a schematic sectional view of one embodiment of the present invention, and FIG. 2 is a schematic sectional view of a conventional organic thin film EL device. 1,21 glass substrate 2,22 ITO transparent electrode 3 polysilylene thin film layer 4,24 organic phosphor thin film layer 5,25 back electrode 23 organic hole injection layer
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭63−264692（ＪＰ，Ａ) 特開 昭63−295695（ＪＰ，Ａ) 特開 平１−319044（ＪＰ，Ａ) 特開 昭56−96717（ＪＰ，Ａ) ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-63-264692 (JP, A) JP-A-63-295695 (JP, A) JP-A-1-319044 (JP, A) 96717 (JP, A)
Claims (1)
に、少なくとも有機正孔注入層と有機蛍光体薄膜層が積
層されてなる有機薄膜EL素子において、有機正孔注入層
が、一般式； （式中、R1およびR2はそれぞれ同一でも異なっていても
よく、アルキル基、アリール基、シクロアルキル基、置
換アルキル基、置換アリール基、置換シクロアルキル基
またはアルコキシ基を示す） の１種または２種以上を構造単位として有するポリシリ
レン化合物を含む有機正孔伝導性薄膜からなることを特
徴とする有機薄膜EL素子。1. An organic thin-film EL device comprising at least one organic hole-injecting layer and an organic phosphor thin-film layer laminated between a pair of transparent electrodes, wherein the organic hole-injecting layer has a general formula: (Wherein R 1 and R 2 may be the same or different and each represents an alkyl group, an aryl group, a cycloalkyl group, a substituted alkyl group, a substituted aryl group, a substituted cycloalkyl group or an alkoxy group) An organic thin film EL device comprising an organic hole conductive thin film containing a polysilylene compound having two or more types as structural units.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1020792A JP2727620B2 (en) | 1989-02-01 | 1989-02-01 | Organic thin film EL device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1020792A JP2727620B2 (en) | 1989-02-01 | 1989-02-01 | Organic thin film EL device |
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| Publication Number | Publication Date |
|---|---|
| JPH02204996A JPH02204996A (en) | 1990-08-14 |
| JP2727620B2 true JP2727620B2 (en) | 1998-03-11 |
Family
ID=12036932
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1020792A Expired - Lifetime JP2727620B2 (en) | 1989-02-01 | 1989-02-01 | Organic thin film EL device |
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