JP2007525571A - 修飾分子アレイ - Google Patents
修飾分子アレイ Download PDFInfo
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- JP2007525571A JP2007525571A JP2006548380A JP2006548380A JP2007525571A JP 2007525571 A JP2007525571 A JP 2007525571A JP 2006548380 A JP2006548380 A JP 2006548380A JP 2006548380 A JP2006548380 A JP 2006548380A JP 2007525571 A JP2007525571 A JP 2007525571A
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- hydrogel
- array
- polynucleotide
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Abstract
Description
(i)アクリルアミド、メタクリルアミド、ヒドロキシエチルメタクリレート又はN−ビニルピロリジノンである第一コモノマー;及び
(ii)式(I):
H2C=C(H)−C(=O)−A−B−C(I);
の官能基化されたアクリルアミド又はアクリレート、あるいは式(II):
H2C=C(CH3)−C(=O)−A−B−C−(II)
のメタクリレート又はメタクリルアミド
[式中、
Aは、NR又はO[式中、Rは、水素又は1〜5個の炭素原子を含む、場合により置換された飽和ヒドロカルビル基である]であり;
−B−は、式−(CH2)n−[式中、nは1から50までの整数である]の、場合により置換されたアルキレンビラジカルであり;及びn=2又はそれ以上である場合、前記アルキレンビラジカルの1又はそれ以上の、場合により置換されたエチレンビラジカル−CH2CH2−は、独立して、エテニレン及びエチニレン部分によって置換されていてもよく;及びn=1又はそれ以上である場合、1又はそれ以上のメチレンビラジカル−CH2−は、独立して、4〜50個の炭素原子を含む、場合により置換された単環式又は多環式炭化水素ビラジカル、或いは少なくとも1個のCH2又はCH2が酸素、硫黄又は窒素原子又はNH基によって置換されている、対応する複素単環式又は複素多環式ビラジカルで置換されていてもよく;及び
Cは、化合物を前記ヒドロゲルに共有結合するための、前記化合物との反応のための基である]
である第二コモノマー
の混合物を固体支持体上で重合することを含む、前記固体支持体に固定化されたヒドロゲルを製造する方法であって、共有結合的に表面修飾されていない前記支持体上で実施され、及び重合生成物を共有結合的に表面修飾されていない前記支持体に固定化することを特徴とする方法を提供する。
(1)重合生成物を形成するために、
(i)アクリルアミド、メタクリルアミド、ヒドロキシエチルメタクリレート又はN−ビニルピロリジノンである第一コモノマー;及び
(ii)式(I):
H2C=C(H)−C(=O)−A−B−C(I);
の官能基化されたアクリルアミド又はアクリレート、あるいは式(II):
H2C=C(CH3)−C(=O)−A−B−C−(II)
のメタクリレート又はメタクリルアミド
[式中、
Aは、NR又はO[式中、Rは、水素又は1〜5個の炭素原子を含む、場合により置換された飽和ヒドロカルビル基である]であり;
−B−は、式−(CH2)n−[式中、nは1から50までの整数である]の、場合により置換されたアルキレンビラジカルであり;及びn=2又はそれ以上である場合、前記アルキレンビラジカルの1又はそれ以上の、場合により置換されたエチレンビラジカル−CH2CH2−は、独立して、エテニレン及びエチニレン部分によって置換されていてもよく;及びn=1又はそれ以上である場合、1又はそれ以上のメチレンビラジカル−CH2−は、独立して、4〜50個の炭素原子を含む、場合により置換された単環式又は多環式炭化水素ビラジカル、或いは少なくとも1個のCH2又はCH2が酸素、硫黄又は窒素原子又はNH基によって置換されている、対応する複素単環式又は複素多環式ビラジカルで置換されていてもよく;及び
Cは、化合物を前記ヒドロゲルに共有結合するための、前記化合物との反応のための基である]
である第二コモノマー
の混合物を固体支持体上で重合することを含む、前記固体支持体に固定化されたヒドロゲルを製造すること;及び
(2)1又はそれ以上の対象分子を、工程(1)で製造されるヒドロゲル中に存在する反応部位に結合すること
を含む方法によって好ましくは入手可能であり、及び一般的に入手される、単一分子アレイ適用における固体支持ヒドロゲルアレイの使用を提供する。
(1)シリカベースの支持体に直接支持されるアレイ;
(2)ヒドロゲルベースの分子アレイ;及び
(3)PEM支持分子アレイ
が存在する。
の部分を含む。
(i)増幅する鋳型にハイブリダイズすることができる第一及び第二オリゴヌクレオチドプライマーであるポリヌクレオチド分子を、固体支持ヒドロゲル内に存在する反応部位と反応させること;
(ii)工程(i)の固体支持ヒドロゲルに結合した第一オリゴヌクレオチドプライマーを、オリゴヌクレオチドプライマーへの鋳型のハイブリダイゼーションを可能にする条件下で、増幅する1又はそれ以上の鋳型と接触させること、但し各々の鋳型は、3’末端に、第一オリゴヌクレオチドプライマーにハイブリダイズすることができる配列及び5’末端に、その相補物が第二オリゴヌクレオチドプライマーにハイブリダイズすることができる配列を含む;及び
(iii)第一及び第二オリゴヌクレオチドプライマー及び鋳型を使用して1又はそれ以上の核酸増幅反応を実施し、それによって対象分子のクラスター化アレイを生成すること
を含む前記方法を提供する。
(本発明に従って作製したアレイの使用)
A:ガラススライドの清浄化−ヒドロゲル表面の生成のために使用するガラススライドを、以下の社内プロトコールを用いて清浄化した:スライドを、Decon(商標)、1M 水酸化ナトリウム水溶液及び最後に0.1M 塩酸(水溶液)中で連続的にインキュベートした。各々の工程後、スライドをMilliQ水中で超音波処理した。清浄化したスライドをエタノール中で保存した。
アクリルアミド(純度99+%、0.4g)をMilliQ水(10ml)に溶解した(溶液I)。過硫酸カリウム又はアンモニウム(0.25g)をMilliQ水(5ml)に溶解した(溶液II)。N−(5−ブロモアセトアミジルペンチル)アクリルアミド(BRAPA)(33mg)をDMF(330μl)に溶解した(溶液III)。
(ポリアクリルアミドヒドロゲルのガラススライドへの適用)
方法I−2枚のスライド(場合によりシラン化した)をその間のシリコンガスケットと共に構築して重合セルを形成した。スライドとガスケットをバインダークリップで一緒に保持した。重合混合物(800μl)を各々の重合セルに注入した。室温で1時間半、重合を進行させた。その後、重合セルを分解して、スライドをMilliQ流水下で十分に洗浄した。次にスライドを乾燥し、アルゴン下で保存した。
以下は、新しい表面への5’−ホスホロチオエート修飾ポリヌクレオチドの固定化のための代表的手順を構成する。基本的表面特性を評価するために、典型的には3’−蛍光標識を有するオリゴを使用する。
プリント緩衝液(リン酸カルシウム 100mM、pH7)中のポリヌクレオチド(1μM)を1μl滴として表面に適用した。次にスライドを室温で1時間、湿潤チェンバー内に置いた。次にプリントしたスライドをMilliQ水で洗い、高温洗浄緩衝液(トリスHCl 10mM、EDTA 10mM、pH8(80−90℃))中でボルテックスした。プリントしたスライドを最後にMilliQ水で洗い、アルゴン流下で乾燥して、画像化まで暗所で保存した。
広い領域にわたってポリヌクレオチドを固定化するために、スライドの上にガスケットを置き、形成されたチェンバー内にポリヌクレオチド溶液を注入して、ガスケットの上にカバーガラスを置いた。その後、スライドを湿潤チェンバーにおいて室温で1時間インキュベートし、上述したように処理した。
被覆したスライドを特別にあつらえたフローセルに適合させた。プリント緩衝液中のポリヌクレオチド(400μl、0.1−10nM)をセルに注入した。ポリヌクレオチドの濃度は、表面上のポリヌクレオチドの正確な単一分子密度を実現するように選択する。セルを暗所において室温で1時間インキュベートした。プリントされた表面を、その後、プリント緩衝液(20ml)、高温洗浄緩衝液(20ml、80−90℃)及び最後にMilliQ水(20ml)を連続的に注入することによって洗浄した。
A:バルク適用(マイクロアレイに適する)−プリントしたスライドを、結合Cy3染料を含む蛍光基準対照スライドの存在下に蛍光スキャナーで画像化した。次にプリントスライドを、暗所においてあらかじめ設定した温度でプリント緩衝液を含む瓶の中でインキュベートした。スライドを一定の間隔で画像化し、蛍光強度を記録した。スポットの蛍光強度はその領域に固定化されたポリヌクレオチドの量に比例する。時間に伴う蛍光強度の変化の作図により、ポリアクリルアミド表面の結合ポリヌクレオチドについての安定性プロフィールを得た。
被覆したスライドを特別あつらえのフローセルに適合させた。セルをMilliQ水(10ml)、次にリン酸プリント緩衝液(0.1M、pH7.0)で洗い流し、その後、室温で30分間インキュベートした。この手順は、表面への模擬DNA結合を構成した。セルをMilliQ水(10ml)、高温TE緩衝液(10ml、10mM トリスHCl、10mM EDTA、pH8.0)、次にMilliQ水(10ml)で洗い流した。その後、蛍光バックグラウンド読取りを得るために特別あつらえの全内部反射蛍光光度計を用いてスライドを画像化した。次にセルを酵素学的緩衝液(10ml、50mM トリスHCl、4mM MgSO4、0.2mM MnCl2、0.05%トゥイーン20、pH8.0)で洗い流した。次に蛍光標識したヌクレオチドの溶液(400μl、酵素学的緩衝液中0.2−2μM)をセルに注入し、セルをあらかじめ設定した温度で30分間インキュベートした。セルを洗浄緩衝液(10ml、50mM トリスHCl、4mM MgSO4、0.05%トゥイーン20、pH8.0)、高塩緩衝液(10ml、50mM トリスHCl、1M NaCl、4mM MgCl2、0.05%トゥイーン20、pH8.0)、TE緩衝液(10ml、上述した組成物)及びMilliQ水(10ml)で洗い流した。その後、表面へのヌクレオチド付着のレベルを測定するために特別あつらえの全内部反射蛍光光度計を用いてスライドを画像化した。
A:単一分子アレイ適用−被覆スライドを特別あつらえのフローセルに適合させた。次に、自己プライミングDNAヘアピンの溶液(200μl、1nM、0.1M KPi、pH7.9)をフローセルに注入し、セルを室温で1時間インキュベートした。次にセルを煮沸TE緩衝液(20ml、10mM トリスHCl、10mM EDTA、pH8.0)、及びMilliQ水(20ml)で洗い流した。その後、蛍光バックグラウンド読取りを得るために特別あつらえの全内部反射蛍光光度計を用いてスライドを画像化した。次にフローセルを洗浄緩衝液(20ml、50mM トリスHCl、4mM MgSO4、0.05%トゥイーン20、pH8.0)で洗い流し、その後、酵素学的混合物(2×100μl、0.2μM 蛍光標識ヌクレオチド、5μg/ml DNAポリメラーゼ、50mM トリスHCl、4mM MgSO4、0.4mM MnCl2、0.05%トゥイーン20、pH8.0)をフローセルに注入した。フローセルを45℃で30分間インキュベートした。次にフローセルを洗浄緩衝液(20ml、50mM トリスHCl、4mM MgSO4、0.05%トゥイーン20、pH8.0)、高塩洗浄緩衝液(20ml、50mM トリスHCl、1M NaCl、4mM MgSO4、0.05%トゥイーン20、pH8.0)、TE緩衝液(20ml、10mM トリスHCl、10mM EDTA、pH8.0)及びMilliQ水(20ml)で、0.5ml/秒の流速で洗い流した。その後、ヘアピンへの蛍光標識ヌクレオチドの酵素組込みのレベルを測定するために特別あつらえの全内部反射蛍光光度計を用いてスライドを画像化した。
A:ポリアクリルアミドベースのガラス支持ヒドロゲルを実施例1で述べたように製造する。
1モル%BRAPAを含むポリアクリルアミドヒドロゲルの処理を、パートAで述べたように、ヒドロゲルを塩酸ポリアリルアミンの溶液(2mg/ml MilliQ水、pH8)と接触させることによって実施する。接触は室温で30分間実施し、その後、溶液をポリアクリル酸(2mg/ml MilliQ水、pH8.2)で処理する。溶液を室温で30分間インキュベートし、次にMilliQ水で処理する。2層の多価電解質で処理した表面は、多価電解質で処理していない対照ヒドロゲル表面と比較したとき、蛍光的に官能基化されたヌクレオチドの付着の低下を示す。
プラスチック基質をAmicから入手し、Decon 90で一晩清浄化した。これらは、ポリ(メチルメタクリレート)(Amic PMMA)、及び環状オレフィン1060及び1420プラスチック(Amic(COP)1060及びAmic(COP)1420)であった。その翌日、それらをMilliQ水で十分にすすいで乾燥した。MilliQ水65mlにアクリルアミド1.3gを溶解することによって2%w/vアクリルアミド溶液を作製した。次にこの溶液をアルゴンで15分間パージして、重合反応を阻害し得る酸素を除去した。その後BRAPA(107mg)をジメチルホルムアミド(DMF)1.07mlで溶解し、脱気したアクリルアミド溶液に添加した。混合後、TEMED触媒75μlをアクリルアミド/BRAPA溶液に加えた。次に過硫酸カリウム開始剤の0.05g/ml溶液0.65mlをアクリルアミド/BRAPA/TEMED溶液に添加することによって重合を開始させた。アクリルアミド/BRAPA/TEMED/過硫酸塩溶液を速やかに混合し、清浄乾燥プラスチック(及びガラス)基質を含むコプリン瓶に添加した。90分後、スライドを重合混合物から取り出し、MilliQ流水で十分にすすいだ。次にそれらをMilliQ中で20秒間ボルテックスし、流水下で再び洗浄した後、アルゴンで乾燥した。このようにして処理したスライドを以下、シラン不含アクリルアミド(SFA)で処理したスライド又は「SFAを有する支持体」と称する。
実施例9で述べたようなスライド作製後、GraceBio labsからのCultureWellカバーガラスガスケットをスライドに1時間付着させた。10μM リン酸緩衝液、pH7中の1μM ホスホロチオエート−Cy3−DNA(陽性)及び1μM ヒドキシル−Cy3−DNA(陰性、対照DNA)をプラスチック(及びガラス)スライド上のウエルに滴下し、湿潤チェンバーにおいて室温(20℃)で1時間、結合を実施した。結合後、各々のスライドをより高いイオン強度の0.10M リン酸緩衝液で十分にすすいだ。次にガスケットを慎重に取り出し、スライドを10mM トリス/10mM EDTA、pH8緩衝液中で20秒間ボルテックスした。最後にスライドをMilliQ流水ですすぎ、その後、アルゴンで乾燥した。
Cy3チャンネルにおいて550V、100μm分解能(532レーザー励起)で、Typhoon 8600画像化装置での蛍光走査を実施した。
他のプラスチック(例えばポリスチレン)及び同じタイプであるが異なる供給業者からのプラスチックも試験し、ハイブリダイゼーション試験を以下のように試みた:
概要:
本発明者らのアプローチは、固体支持体の表面を作製すること、次にPCRにおいて直ちに使用できる表面を生成するためにプライマーを共有結合すること(グラフトすること)の初期工程を含む。その後PCR反応の直前に、PCR鋳型を、結合したプライマーにハイブリダイズし得る。PCR反応は、それ故、鋳型の変性ではなく初期プライマー延長工程から始まる。このアプローチを図6に例示する。
この実験で使用した固体支持体は、8チャンネルのガラスチップ、例えばMicronit(Twente,Nederland)又はIMT(Neuchatel,Switzerland)によって提供されるものであった。しかし、その実験条件及び手順は他の固体支持体にも容易に適用できる。
その後チップを実施例1で述べたようにポリアクリルアミドヒドロゲルで被覆した。
ポリTスペーサーを伴うP7プライマー:
5’−ホスホロチオエート−TTTTTTTTTTCAAGCAGAAGACGGCATACGA−3’
ポリTスペーサーを伴うP5プライマー:
5’−ホスホロチオエート−TTTTTTTTTTAATGATACGGCGACCACCGA−3’
1−97.5℃を45秒間
2−X℃を1分30秒間
3−73℃を1分30秒間
4−1に戻る、[40]回
5−73℃を5分間
6−20℃を3分間
7−終了。
背景:
DNAマイクロアレイは、遺伝子発現パターンを決定するため又は遺伝子型を特定するために、数千の不均一な(固−液界面)ハイブリダイゼーションを同時に実施するために使用し得る。これらのアレイ上でのハイブリダイゼーションは、プローブの密度を含む多くの因子に依存するが(Peterson, A. W. et al. (2001) Nucl. Acids Res. 29, 5163-5168)、反応速度及び平衡結合定数は溶液層とは著明に異なり得る。
(1)マイクロプレート上でのハイブリダイゼーション−スペーサーの影響
(シラン不含アクリルアミド(SFA)によるガラスの修飾)
96穴・ガラス底・ポリスチレンマイクロプレートをDecon 90内に一晩置いた。その翌日、マイクロプレートをMilliQ水で十分にすすぎ、その後アルゴンで乾燥した。次にマイクロプレートの各々の穴のガラス表面をシラン不含アクリルアミド(SFA)で被覆した。簡単に述べると、アクリルアミドを水に溶解して2%w/v溶液を生成し、次にこの溶液にアルゴンを15分間通気した。BRAPA(活性単量体)82.5mgをジメチルホルムアミド(DMF)0.825mlに溶解した。次にこの溶液をアクリルアミド溶液50mlに添加して、アクリルアミドに対して2モル%のBRAPA溶液を得た。混合後、TEMED 57.5μlをアクリルアミド/BRAPA溶液に添加した。次にMilliQ水2mlに0.1gを溶解することによって過硫酸カリウム溶液を作製した。次に開始剤溶液0.5mlを脱気したアクリルアミド/BRAPA/TEMED溶液に加え、混合後、重合混合物0.4mlをマイクロプレートの各々の穴にピペットで分注した。重合を1.5時間進行させ、その後プログラムAHPEM160を用いて自動マイクロプレート洗浄器でマイクロプレートを洗った。洗浄後、プレートをアルゴン下で乾燥し、真空下で一晩保存した。
以下の4個のプライマーを、10mM リン酸緩衝液pH7から2.0μM、1.0μM、0.5μM及び0.1μM濃度で表面に結合した:
1)ポリTスペーサーなしのP7プライマー:
5’−ホスホロチオエート−CAAGCAGAAGACGGCATACGA−3’
2)ポリTスペーサーを伴うP7プライマー:
5’−ホスホロチオエート−TTTTTTTTTTCAAGCAGAAGACGGCATACGA−3’
3)ポリTスペーサーなしのP5プライマー:
5’−ホリスホロチオエート−AATGATACGGCGACCACCGA−3’
4)ポリTスペーサーを伴うP5プライマー:
5’−ホスホロチオエート−TTTTTTTTTTAATGATACGGCGACCACCGA−3’
プライマーへのハイブリダイゼーション(図7)を、以下の相補的なテキサスレッド標識標的を用いて実施した:
P5’ P5配列に相補的な標的:
5’テキサスレッド−TCGGTGGTCGCCGTATCATT−3’
P7’ P7配列に相補的な標的:
5’テキサスレッド−TCGTATGCCGTCTTCTGCTTG−3’
1)97.5℃まで0.5°/秒
2)97.5℃を2分30秒間
3)97.5℃を2秒間−0.1℃/サイクル
4)3に戻る、574回
5)40.0℃を15分間
6)終了。
図8に提示する結果は、10T塩基を有するスペーサーを付加したときのP5及びP7プライマーの両方に関してハイブリダイゼーションシグナルの明らかな改善を示す。シグナルがはるかに高いだけでなく、シグナル対ノイズ(特異的対比特異的ハイブリダイゼーション)も大きく改善する。
(SFA表面へのオリゴプライマーの結合:)
以下の4個のプライマーを、10mM リン酸緩衝液pH7から1.0μM濃度で表面に結合した:
1)ポリTスペーサーなしのP7プライマー:
5’−ホスホロチオエート−CAAGCAGAAGACGGCATACGA−3’
2)ポリTスペーサーを伴うP7プライマー:
5’−ホスホロチオエート−TTTTTTTTTTCAAGCAGAAGACGGCATACGA−3’
3)ポリTスペーサーなしのP5プライマー:
5’−ホリスホロチオエート−AATGATACGGCGACCACCGA−3’
4)ポリTスペーサーを伴うP5プライマー:
5’−ホスホロチオエート−TTTTTTTTTTAATGATACGGCGACCACCGA−3’
プライマーへのハイブリダイゼーション(図7)を、以下の相補的なテキサスレッド標識標的を用いて実施した:
P5’ P5配列に相補的な標的:
5’テキサスレッド−TCGGTGGTCGCCGTATCATT−3’
P7’ P7配列に相補的な標的:
5’テキサスレッド−TCGTATGCCGTCTTCTGCTTG−3’
図10及び11に提示する結果は、10T塩基を有するスペーサーを添加したときP5及びP7プライマーの両方に関してハイブリダイゼーションシグナルの明らかな改善を示す。シグナルがはるかに高いだけでなく、シグナル対ノイズ(特異的対比特異的ハイブリダイゼーション)も大きく改善する。
SFA表面へのオリゴプライマーの結合:
以下の8個のプライマーを、10mM リン酸緩衝液pH7から1.0μM濃度で表面に結合した:
1)ポリTスペーサーなしのP7プライマー:
5’−ホスホロチオエート−CAAGCAGAAGACGGCATACGA−3’
2)ポリTスペーサーを伴うP7プライマー:
5’−ホスホロチオエート−TTTTTTTTTTCAAGCAGAAGACGGCATACGA−3’
3)ポリTスペーサーなしのP5プライマー:
5’−ホスホロチオエート−AATGATACGGCGACCACCGA−3’
4)ポリTスペーサーを伴うP5プライマー:
5’−ホスホロチオエート−TTTTTTTTTTAATGATACGGCGACCACCGA−3’
5)ポリTスペーサーを伴うP5プライマー:
5’−ホスホロチオエート−TTAATGATACGGCGACCACCGA−3’
6)ポリTスペーサーを伴うP5プライマー:
5’−ホスホロチオエート−TTTTTAATGATACGGCGACCACCGA−3’
7)ポリTスペーサーを伴うP5プライマー:
5’−ホスホロチオエート−TTTTTTTTTTTTTTTTTTTTAATGATACGGCGACCACCGA−3’
8)C18スペーサーを伴うP5プライマー:
5’−ホスホロチオエート−C18−AATGATACGGCGACCACCGA−3’
プライマーへのハイブリダイゼーション(図7)を、以下の相補的なテキサスレッド標識標的を用いて実施した:
P5’ P5配列に相補的な標的:
5’テキサスレッド−TCGGTGGTCGCCGTATCATT−3’
P7’ P7配列に相補的な標的:
5’テキサスレッド−TCGTATGCCGTCTTCTGCTTG−3’
図12に示す結果は、10TまでのポリTスペーサー長でハイブリダイゼーション収率は急激に上昇するが、10Tから20T塩基の間でハイブリダイゼーション収率は低下し始める。最適スペーサー長以上での低いハイブリダイゼーション収率は別の文献でも報告されている(Shchepinov, M. S. et al. (1997) Nucl. Acids Res. 25, 1155-1161; Guo, Z. et al (1994) Nucl. Acids Res. 22, 5456-5465)。1つの考えられる説明は、より大きなプライマーは表面上のプライマー密度がより低く、それ故より小さなハイブリダイゼーションシグナルを生じさせるということである。C18スペーサーはハイブリダイゼーション収率の小さな改善だけをもたらし、スペーサーの親水性も重要な因子であることを示唆する。
Claims (60)
- 重合生成物を形成するために、
(i)アクリルアミド、メタクリルアミド、ヒドロキシエチルメタクリレート又はN−ビニルピロリジノンである第一コモノマー;及び
(ii)式(I):
H2C=C(H)−C(=O)−A−B−C(I);
の官能基化されたアクリルアミド又はアクリレート、あるいは式(II):
H2C=C(CH3)−C(=O)−A−B−C−(II)
のメタクリレート又はメタクリルアミド
[式中、
Aは、NR又はO[式中、Rは、水素又は1〜5個の炭素原子を含む、場合により置換された飽和ヒドロカルビル基である]であり、
−B−は、式−(CH2)n−[式中、nは1から50までの整数である]の、場合により置換されたアルキレンビラジカルであり;及びn=2又はそれ以上である場合、前記アルキレンビラジカルの1又はそれ以上の、場合により置換されたエチレンビラジカル−CH2CH2−は、独立して、エテニレン及びエチニレン部分によって置換されていてもよく;及びn=1又はそれ以上である場合、1又はそれ以上のメチレンビラジカル−CH2−は、独立して、4〜50個の炭素原子を含む、場合により置換された単環式又は多環式炭化水素ビラジカル、或いは少なくとも1個のCH2又はCH2が酸素、硫黄又は窒素原子又はNH基によって置換されている、対応する複素単環式又は複素多環式ビラジカルで置換されていてもよく;及び
Cは、化合物を前記ヒドロゲルに共有結合するための、前記化合物との反応のための基である]
である第二コモノマー
の混合物を固体支持体上で重合することを含む、固体支持体に固定化されたヒドロゲルを製造する方法であって、前記方法が、共有結合的に表面修飾されていない前記支持体上で実施され、及び重合生成物を共有結合的に表面修飾されていない前記支持体に固定化することを特徴とする方法。 - 前記支持体がシリカベースの支持体である、請求項1に記載の方法。
- 前記シリカベースの支持体が溶融シリカである、請求項2に記載の方法。
- 前記溶融シリカがSPECTRASIL(商標)である、請求項3に記載の方法。
- 前記支持体が非シリカベースの支持体である、請求項1に記載の方法。
- 前記第一コモノマーがアクリルアミドである、請求項1から請求項5のいずれか一項に記載の方法。
- 前記第二コモノマーが式(I)のアクリルアミドである、請求項1から請求項6のいずれか一項に記載の方法。
- 式(I)の前記アクリルアミドがA=NHを有する、請求項6に記載の方法。
- −B−がC2−C10アルキレンビラジカルである、請求項1から請求項8のいずれか一項に記載の方法。
- −B−が−(CH2)5−である、請求項8に記載の方法。
- Cがヒドロキシル、チオール、アミン、酸、エステル又はハロアセトアミドである、請求項1から請求項10のいずれか一項に記載の方法。
- 前記ハロアセトアミドがブロモアセトアミドである、請求項11に記載の方法。
- 式(I)の前記アクリルアミドがN−(5−ブロモアセトアミジルペンチル)アクリルアミド(BRAPA)である、請求項1から請求項8のいずれか一項に記載の方法。
- 前記第二コモノマーが、コモノマーの総モル量に対して≧1モル%の量で存在する、請求項1から請求項13のいずれか一項に記載の方法。
- 前記第二コモノマーが、全コモノマーの総モル量に対して≧2モル%の量で存在する、請求項14に記載の方法。
- 前記重合の間、多不飽和架橋剤が存在しない、請求項1から請求項15のいずれか一項に記載の方法。
- 請求項1から請求項16のいずれか一項の方法に従って得られる固体支持ヒドロゲル。
- ヒドロゲルの厚さが100nm未満である、請求項17に記載の固体支持ヒドロゲル。
- 1又はそれ以上の対象分子を、請求項17又は請求項18で定義される固体支持ヒドロゲル中に存在する反応部位と反応させることを含む、固体支持ヒドロゲルベースの分子アレイを製造する方法。
- 前記対象分子が生体分子である、請求項19に記載の方法。
- 前記対象分子がポリヌクレオチド又はタンパク質である、請求項19又は請求項20に記載の方法。
- 前記対象分子がポリヌクレオチドである、請求項21に記載の方法。
- 各々のポリヌクレオチドの少なくとも一部が一本鎖である、請求項22に記載の方法。
- 前記ポリヌクレオチドが1〜20個のスペーサーヌクレオチドを含む、請求項22又は請求項23に記載の方法。
- 前記ポリヌクレオチドが1〜10個のスペーサーヌクレオチドを含む、請求項24に記載の方法。
- 前記ポリヌクレオチドが10個のスペーサーヌクレオチドを含む、請求項25に記載の方法。
- 前記スペーサーヌクレオチドが各々チミン塩基(T)を含む、請求項24から請求項26のいずれか一項に記載の方法。
- 前記ポリヌクレオチドがヘアピンポリヌクレオチドである、請求項22又は請求項23に記載の方法。
- 前記対象分子が硫黄含有求核試薬を含む、請求項19から請求項28のいずれか一項に記載の方法。
- Xが酸素又は硫黄である、請求項30に記載の方法。
- Yが酸素である、請求項30又は請求項31に記載の方法。
- Zが酸素又は硫黄原子又はメチル基である、請求項30から請求項32のいずれか一項に記載の方法。
- 前記部分がチオホスフェートである、請求項30から請求項33のいずれか一項に記載の方法。
- 前記硫黄含有求核試薬がリンカー基によって対象分子に連結されており、及び前記対象分子がポリヌクレオチドである、請求項29から請求項34のいずれか一項に記載の方法。
- 対象分子のクラスター化されたアレイである、固体支持ヒドロゲルベースの分子アレイを製造する方法であって、
(i)増幅すべき鋳型にハイブリダイズすることができる第一及び第二オリゴヌクレオチドプライマーであるポリヌクレオチド分子を、請求項22から請求項27のいずれか一項に記載の方法に従って固体支持ヒドロゲル中に存在する反応部位と反応させること;
(ii)各々の鋳型が、3’末端に、第一オリゴヌクレオチドプライマーにハイブリダイズすることができる配列及び5’末端に、その相補物が第二オリゴヌクレオチドプライマーにハイブリダイズすることができる配列を含む、増幅すべき1又はそれ以上の鋳型と、工程(i)の固体支持ヒドロゲルに結合した第一オリゴヌクレオチドプライマーを、鋳型のオリゴヌクレオチドプライマーへのハイブリダイゼーションを可能にする条件下で接触させること;及び
(iii)第一及び第二オリゴヌクレオチドプライマー及び鋳型を使用して1又はそれ以上の核酸増幅反応を実施し、それによって対象分子のクラスター化されたアレイを作製すること
を含む方法。 - 支持体の表面に固定化された複数の対象分子を含む分子アレイを修飾する方法であって、前記アレイに多価電解質又は中性高分子を適用する工程を含む方法。
- 前記対象分子が請求項20から請求項36のいずれか一項において定義されるとおりである、請求項37に記載の方法。
- 前記支持体が、シリカベースの基質、ヒドロゲル及び多価電解質多層を含む群より選択される成員から成る、請求項37又は請求項38に記載の方法。
- 前記対象分子が直接又は結合部分を通してシリカベースの支持体に結合される、請求項39に記載の方法。
- 前記ヒドロゲルがポリアクリルアミドヒドロゲルである、請求項39に記載の方法。
- 前記多価電解質多層が各々ポリアリルアミン及びポリアクリル酸の1又はそれ以上の層を含み、生体分子が結合している表面がポリアクリル酸を含む、請求項39に記載の方法。
- 前記ヒドロゲルが、重合生成物を形成するために、
(i)アクリルアミド、メタクリルアミド、ヒドロキシエチルメタクリレート又はN−ビニルピロリジノンである第一コモノマー;及び
(ii)式(I):
H2C=C(H)−C(=O)−A−B−C(I);
の官能基化されたアクリルアミド又はアクリレート、あるいは式(II):
H2C=C(CH3)−C(=O)−A−B−C−(II)
のメタクリレート又はメタクリルアミド
[式中、
Aは、NR又はO[式中、Rは、水素又は1〜5個の炭素原子を含む、場合により置換された飽和ヒドロカルビル基である]であり;
−B−は、式−(CH2)n−[式中、nは1から50までの整数である]の、場合により置換されたアルキレンビラジカルであり;及びn=2又はそれ以上である場合、前記アルキレンビラジカルの1又はそれ以上の、場合により置換されたエチレンビラジカル−CH2CH2−は、独立して、エテニレン及びエチニレン部分によって置換されていてもよく;及びn=1又はそれ以上である場合、1又はそれ以上のメチレンビラジカル−CH2−は、独立して、4〜50個の炭素原子を含む、場合により置換された単環式又は多環式炭化水素ビラジカル、或いは少なくとも1個のCH2又はCH2が酸素、硫黄又は窒素原子又はNH基によって置換されている、対応する複素単環式又は複素多環式ビラジカルで置換されていてもよく;及び
Cは、化合物を前記ヒドロゲルに共有結合するための、前記化合物との反応のための基である]
である第二コモノマー
の混合物を固体支持体上で重合することを含む方法によって得られ、前記重合が、前記固体支持体上で実施され、及び重合生成物を前記固体支持体に固定化する、請求項39に記載の方法。 - 前記ヒドロゲルが、請求項1から請求項16のいずれか一項で定義される方法によって得られる、請求項43に記載の方法。
- 適用される多価電解質がポリアクリル酸である、請求項37から請求項44のいずれか一項に記載の方法。
- ポリアリルアミンをアレイに適用し、次にポリアクリル酸を適用する、請求項37から請求項45のいずれか一項に記載の方法。
- 前記中性高分子がポリエチレングリコールである、請求項37から請求項44のいずれか一項に記載の方法。
- 前記方法が、マイクロアレイ又は単一分子アレイを修飾することを含む、請求項37から請求項44のいずれか一項に記載の方法。
- 前記方法が単一分子アレイを修飾することを含む、請求項48に記載の方法。
- 前記方法がクラスター化されたマイクロアレイを修飾することを含む、請求項48に記載の方法。
- 請求項19から請求項50のいずれか一項に記載の方法に従って得られる分子アレイ。
- 単一分子アレイである、請求項51に記載の分子アレイ。
- クラスター化されたマイクロアレイである、請求項51に記載の分子アレイ。
- 固定化された対象分子又はそれに結合した分子の検査(interrogation)を必要とする何らかの方法における、請求項51から請求項53のいずれか一項で定義される分子アレイの使用。
- 前記の固定化された対象分子がポリヌクレオチドであり、前記方法が、前記ポリヌクレオチドの全体又は一部の配列を決定するための配列決定反応である、請求項54に記載の使用。
- 前記配列決定反応が、配列決定すべきポリヌクレオチドに相補的な核酸の鎖に1又はそれ以上のヌクレオチドを組み込むこと及び1又はそれ以上の組み込まれたヌクレオチド中に存在する塩基の同一性を判定することを含む、請求項55に記載の使用。
- 固体支持ヒドロゲルアレイが、
(1)重合生成物を形成するために、
(i)アクリルアミド、メタクリルアミド、ヒドロキシエチルメタクリレート又はN−ビニルピロリジノンである第一コモノマー;及び
(ii)式(I):
H2C=C(H)−C(=O)−A−B−C(I);
の官能基化されたアクリルアミド又はアクリレート、あるいは式(II):
H2C=C(CH3)−C(=O)−A−B−C−(II)
のメタクリレート又はメタクリルアミド
[式中、
Aは、NR又はO[式中、Rは、水素又は1〜5個の炭素原子を含む、場合により置換された飽和ヒドロカルビル基である]であり;
−B−は、式−(CH2)n−[式中、nは1から50までの整数である]の、場合により置換されたアルキレンビラジカルであり;及びn=2又はそれ以上である場合、前記アルキレンビラジカルの1又はそれ以上の、場合により置換されたエチレンビラジカル−CH2CH2−は、独立して、エテニレン及びエチニレン部分によって置換されていてもよく;及びn=1又はそれ以上である場合、1又はそれ以上のメチレンビラジカル−CH2−は、独立して、4〜50個の炭素原子を含む、場合により置換された単環式又は多環式炭化水素ビラジカル、或いは少なくとも1個のCH2又はCH2が酸素、硫黄又は窒素原子又はNH基によって置換されている、対応する複素単環式又は複素多環式ビラジカルで置換されていてもよく;及び
Cは、化合物を前記ヒドロゲルに共有結合するための、前記化合物との反応のための基である]
である第二コモノマー
の混合物を固体支持体上で重合することを含む、固体支持体に固定化されたヒドロゲルを製造すること;及び
(2)1又はそれ以上の対象分子を、工程(1)で製造されるヒドロゲル中に存在する反応部位に結合すること
の工程を含む方法によって得られる、単一分子アレイ適用における固体支持ヒドロゲルアレイの使用。 - 前記支持体がシリカベースの支持体である、請求項57に記載の使用。
- 工程(1)における重合の前に、支持体をシラン結合剤と反応させる、請求項57又は58に記載の使用。
- 前記シラン結合剤が3−メタクリルオキシプロピルトリメトキシシランである、請求項59に記載の使用。
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| US9376710B2 (en) | 2016-06-28 |
| WO2005065814A1 (en) | 2005-07-21 |
| HK1202835A1 (en) | 2015-10-09 |
| EP2789383B1 (en) | 2023-05-03 |
| US8563477B2 (en) | 2013-10-22 |
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