[go: up one dir, main page]

HK1193879A1 - 曝光設備和曝光方法 - Google Patents

曝光設備和曝光方法

Info

Publication number
HK1193879A1
HK1193879A1 HK14107076.6A HK14107076A HK1193879A1 HK 1193879 A1 HK1193879 A1 HK 1193879A1 HK 14107076 A HK14107076 A HK 14107076A HK 1193879 A1 HK1193879 A1 HK 1193879A1
Authority
HK
Hong Kong
Prior art keywords
exposure
exposure apparatus
exposure method
Prior art date
Application number
HK14107076.6A
Other languages
English (en)
Inventor
Yuichi Shibazaki
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of HK1193879A1 publication Critical patent/HK1193879A1/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70258Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • G03F7/70725Stages control
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70141Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70358Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70681Metrology strategies
    • G03F7/70683Mark designs
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/706835Metrology information management or control
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/706843Metrology apparatus
    • G03F7/706845Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70758Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70775Position control, e.g. interferometers or encoders for determining the stage position
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70783Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019Calibration
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Optical Transform (AREA)
HK14107076.6A 2006-08-31 2014-07-11 曝光設備和曝光方法 HK1193879A1 (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006237045 2006-08-31
JP2006237606 2006-09-01
JP2006237491 2006-09-01

Publications (1)

Publication Number Publication Date
HK1193879A1 true HK1193879A1 (zh) 2014-10-03

Family

ID=39136023

Family Applications (10)

Application Number Title Priority Date Filing Date
HK09108556.0A HK1130944A1 (zh) 2006-08-31 2009-09-18 曝光裝置、曝光方法、以及設備製造方法
HK12109422.5A HK1168662A1 (zh) 2006-08-31 2012-09-25 曝光方法和裝置、以及組件製造方法
HK12110558.9A HK1169863A1 (zh) 2006-08-31 2012-10-24 移動體驅動方法和移動體驅動系統、以及曝光方法和裝置
HK14107076.6A HK1193879A1 (zh) 2006-08-31 2014-07-11 曝光設備和曝光方法
HK16106083.7A HK1218184A1 (zh) 2006-08-31 2016-05-30 移動體驅動方法和移動體驅動系統、圖案形成方法和裝置、曝光方法和裝置、以及組件製造方法
HK16106141.7A HK1218187A1 (zh) 2006-08-31 2016-05-31 可移動體驅動方法和可移動體驅動系統、模式形成方法和裝置、曝光方法和裝置以及設備製造方法
HK16112134.4A HK1224021A1 (zh) 2006-08-31 2016-10-20 曝光裝置,曝光方法和器件製造方法
HK16112168.3A HK1224022A1 (zh) 2006-08-31 2016-10-24 曝光裝置、曝光方法和設備製造方法
HK18107772.9A HK1248325B (zh) 2006-08-31 2018-06-15 曝光設備、曝光方法以及裝置製造方法
HK19101492.0A HK1259005A1 (zh) 2006-08-31 2019-01-29 曝光設備、曝光方法以及裝置製造方法

Family Applications Before (3)

Application Number Title Priority Date Filing Date
HK09108556.0A HK1130944A1 (zh) 2006-08-31 2009-09-18 曝光裝置、曝光方法、以及設備製造方法
HK12109422.5A HK1168662A1 (zh) 2006-08-31 2012-09-25 曝光方法和裝置、以及組件製造方法
HK12110558.9A HK1169863A1 (zh) 2006-08-31 2012-10-24 移動體驅動方法和移動體驅動系統、以及曝光方法和裝置

Family Applications After (6)

Application Number Title Priority Date Filing Date
HK16106083.7A HK1218184A1 (zh) 2006-08-31 2016-05-30 移動體驅動方法和移動體驅動系統、圖案形成方法和裝置、曝光方法和裝置、以及組件製造方法
HK16106141.7A HK1218187A1 (zh) 2006-08-31 2016-05-31 可移動體驅動方法和可移動體驅動系統、模式形成方法和裝置、曝光方法和裝置以及設備製造方法
HK16112134.4A HK1224021A1 (zh) 2006-08-31 2016-10-20 曝光裝置,曝光方法和器件製造方法
HK16112168.3A HK1224022A1 (zh) 2006-08-31 2016-10-24 曝光裝置、曝光方法和設備製造方法
HK18107772.9A HK1248325B (zh) 2006-08-31 2018-06-15 曝光設備、曝光方法以及裝置製造方法
HK19101492.0A HK1259005A1 (zh) 2006-08-31 2019-01-29 曝光設備、曝光方法以及裝置製造方法

Country Status (9)

Country Link
US (6) US20080094592A1 (zh)
EP (8) EP2991101B1 (zh)
JP (13) JP5035245B2 (zh)
KR (14) KR101585370B1 (zh)
CN (3) CN102520588B (zh)
HK (10) HK1130944A1 (zh)
SG (2) SG10201407395SA (zh)
TW (8) TWI602032B (zh)
WO (1) WO2008026742A1 (zh)

Families Citing this family (116)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG2014011563A (en) 2006-01-19 2014-05-29 Nippon Kogaku Kk Movable body drive method, movable body drive system, pattern formation method, pattern forming apparatus, exposure method, exposure apparatus, and device manufacturing method
CN104460241B (zh) * 2006-08-31 2017-04-05 株式会社尼康 移动体驱动系统及方法、图案形成装置及方法、曝光装置及方法、组件制造方法
KR101585370B1 (ko) * 2006-08-31 2016-01-14 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법
KR101565272B1 (ko) 2006-08-31 2015-11-02 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법
TWI434326B (zh) 2006-09-01 2014-04-11 尼康股份有限公司 Mobile body driving method and moving body driving system, pattern forming method and apparatus, exposure method and apparatus, component manufacturing method, and correcting method
KR101442449B1 (ko) * 2006-09-01 2014-09-22 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법
WO2009013903A1 (ja) * 2007-07-24 2009-01-29 Nikon Corporation 移動体駆動方法及び移動体駆動システム、パターン形成方法及び装置、露光方法及び装置、並びにデバイス製造方法
US8237919B2 (en) * 2007-08-24 2012-08-07 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method for continuous position measurement of movable body before and after switching between sensor heads
US9013681B2 (en) * 2007-11-06 2015-04-21 Nikon Corporation Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method
US9256140B2 (en) * 2007-11-07 2016-02-09 Nikon Corporation Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method with measurement device to measure movable body in Z direction
US8665455B2 (en) * 2007-11-08 2014-03-04 Nikon Corporation Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method
US8422015B2 (en) 2007-11-09 2013-04-16 Nikon Corporation Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method
US8711327B2 (en) * 2007-12-14 2014-04-29 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8792079B2 (en) * 2007-12-28 2014-07-29 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method having encoders to measure displacement between optical member and measurement mount and between measurement mount and movable body
TW201443578A (zh) * 2007-12-28 2014-11-16 尼康股份有限公司 曝光裝置、移動體驅動系統、圖案形成裝置、及曝光方法、以及元件製造方法
US8269945B2 (en) 2007-12-28 2012-09-18 Nikon Corporation Movable body drive method and apparatus, exposure method and apparatus, pattern formation method and apparatus, and device manufacturing method
US8237916B2 (en) * 2007-12-28 2012-08-07 Nikon Corporation Movable body drive system, pattern formation apparatus, exposure apparatus and exposure method, and device manufacturing method
JP5126594B2 (ja) * 2008-04-04 2013-01-23 株式会社ニコン 較正方法、露光方法及びデバイス製造方法、並びに露光装置
US8786829B2 (en) * 2008-05-13 2014-07-22 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8228482B2 (en) * 2008-05-13 2012-07-24 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8817236B2 (en) 2008-05-13 2014-08-26 Nikon Corporation Movable body system, movable body drive method, pattern formation apparatus, pattern formation method, exposure apparatus, exposure method, and device manufacturing method
US8325325B2 (en) 2008-09-22 2012-12-04 Nikon Corporation Movable body apparatus, movable body drive method, exposure apparatus, exposure method, and device manufacturing method
JP5151852B2 (ja) * 2008-09-22 2013-02-27 株式会社ニコン 補正情報作成方法、露光方法及び露光装置、並びにデバイス製造方法
US8994923B2 (en) * 2008-09-22 2015-03-31 Nikon Corporation Movable body apparatus, exposure apparatus, exposure method, and device manufacturing method
US8508735B2 (en) * 2008-09-22 2013-08-13 Nikon Corporation Movable body apparatus, movable body drive method, exposure apparatus, exposure method, and device manufacturing method
US8760629B2 (en) 2008-12-19 2014-06-24 Nikon Corporation Exposure apparatus including positional measurement system of movable body, exposure method of exposing object including measuring positional information of movable body, and device manufacturing method that includes exposure method of exposing object, including measuring positional information of movable body
US8599359B2 (en) 2008-12-19 2013-12-03 Nikon Corporation Exposure apparatus, exposure method, device manufacturing method, and carrier method
US8773635B2 (en) * 2008-12-19 2014-07-08 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8902402B2 (en) 2008-12-19 2014-12-02 Nikon Corporation Movable body apparatus, exposure apparatus, exposure method, and device manufacturing method
US8634442B1 (en) 2009-04-13 2014-01-21 Soraa Laser Diode, Inc. Optical device structure using GaN substrates for laser applications
US8837545B2 (en) 2009-04-13 2014-09-16 Soraa Laser Diode, Inc. Optical device structure using GaN substrates and growth structures for laser applications
DE112010001615T5 (de) 2009-04-13 2012-08-02 Soraa, Inc. Stuktur eines optischen Elements unter Verwendung von GaN-Substraten für Laseranwendungen
EP3144955A1 (en) 2009-05-20 2017-03-22 Mapper Lithography IP B.V. Method for exposing a wafer
US8970820B2 (en) 2009-05-20 2015-03-03 Nikon Corporation Object exchange method, exposure method, carrier system, exposure apparatus, and device manufacturing method
US8553204B2 (en) 2009-05-20 2013-10-08 Nikon Corporation Movable body apparatus, exposure apparatus, exposure method, and device manufacturing method
US8792084B2 (en) * 2009-05-20 2014-07-29 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8488109B2 (en) 2009-08-25 2013-07-16 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
US8493547B2 (en) 2009-08-25 2013-07-23 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8514395B2 (en) 2009-08-25 2013-08-20 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
US20110056444A1 (en) * 2009-09-08 2011-03-10 Im Chai S Polarity sequenced electro magnetic head gasket engine and replacement kit
NL2005322A (en) * 2009-09-11 2011-03-14 Asml Netherlands Bv A shutter member, a lithographic apparatus and device manufacturing method.
US20110096318A1 (en) * 2009-09-28 2011-04-28 Nikon Corporation Exposure apparatus and device fabricating method
US20110102761A1 (en) * 2009-09-28 2011-05-05 Nikon Corporation Stage apparatus, exposure apparatus, and device fabricating method
US20110096306A1 (en) * 2009-09-28 2011-04-28 Nikon Corporation Stage apparatus, exposure apparatus, driving method, exposing method, and device fabricating method
US20110096312A1 (en) * 2009-09-28 2011-04-28 Nikon Corporation Exposure apparatus and device fabricating method
US20110128523A1 (en) * 2009-11-19 2011-06-02 Nikon Corporation Stage apparatus, exposure apparatus, driving method, exposing method, and device fabricating method
US20110123913A1 (en) * 2009-11-19 2011-05-26 Nikon Corporation Exposure apparatus, exposing method, and device fabricating method
TWI402641B (zh) * 2009-12-04 2013-07-21 Ind Tech Res Inst 聯結多系統達成多軸同步插值裝置與方法
US8488106B2 (en) * 2009-12-28 2013-07-16 Nikon Corporation Movable body drive method, movable body apparatus, exposure method, exposure apparatus, and device manufacturing method
NL2006004A (en) * 2010-03-25 2011-09-27 Asml Netherlands Bv Imprint lithography.
NL2006913A (en) 2010-07-16 2012-01-17 Asml Netherlands Bv Lithographic apparatus and method.
NL2007818A (en) 2010-12-20 2012-06-21 Asml Netherlands Bv Method of updating calibration data and a device manufacturing method.
NL2007802A (en) 2010-12-21 2012-06-25 Asml Netherlands Bv A substrate table, a lithographic apparatus and a device manufacturing method.
WO2012143541A1 (en) 2011-04-20 2012-10-26 Mapper Lithography Ip B.V. Arrangement of optical fibers, and a method of forming such arrangement
US9207549B2 (en) 2011-12-29 2015-12-08 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method with encoder of higher reliability for position measurement
JP6219320B2 (ja) 2012-03-08 2017-10-25 マッパー・リソグラフィー・アイピー・ビー.ブイ. ウェーハなどのターゲットを処理するためのリソグラフィシステム及び方法
US8779635B2 (en) * 2012-04-10 2014-07-15 Kla-Tencor Corporation Arrangement of reticle positioning device for actinic inspection of EUV reticles
JP5936478B2 (ja) * 2012-08-03 2016-06-22 キヤノン株式会社 計測装置、リソグラフィー装置、および物品の製造方法
JP5936479B2 (ja) * 2012-08-03 2016-06-22 キヤノン株式会社 計測装置、リソグラフィー装置、および物品の製造方法
CN104838469B (zh) 2012-10-02 2018-04-24 株式会社尼康 曝光装置及曝光方法、以及器件制造方法
WO2014122223A1 (en) * 2013-02-08 2014-08-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP6381184B2 (ja) * 2013-07-09 2018-08-29 キヤノン株式会社 校正方法、測定装置、露光装置および物品の製造方法
CN105684108A (zh) 2013-09-04 2016-06-15 Ckd株式会社 电磁致动器用电枢线圈、电磁致动器、曝光装置及器件制造方法
JP6452086B2 (ja) * 2013-10-31 2019-01-16 キヤノン株式会社 形状算出装置及び方法、計測装置、物品製造方法、及び、プログラム
DE102014205523A1 (de) * 2014-03-25 2015-10-01 Etel S.A. Positioniereinrichtung in Portalbauweise
WO2015147039A1 (ja) * 2014-03-26 2015-10-01 株式会社ニコン 移動体装置、露光装置、フラットパネルディスプレイの製造方法、及びデバイス製造方法
TWI701514B (zh) 2014-03-28 2020-08-11 日商尼康股份有限公司 移動體裝置、曝光裝置、平板顯示器之製造方法、元件製造方法、及移動體驅動方法
JP6465565B2 (ja) 2014-05-19 2019-02-06 キヤノン株式会社 露光装置、位置合わせ方法およびデバイス製造方法
JP6342738B2 (ja) * 2014-07-24 2018-06-13 株式会社Screenホールディングス データ補正装置、描画装置、検査装置、データ補正方法、描画方法、検査方法およびプログラム
NL2015211A (en) * 2014-08-29 2016-07-12 Asml Netherlands Bv Encoder system calibration method, object positioning system, lithographic apparatus and device device manufacturing method.
TWI693477B (zh) 2015-02-23 2020-05-11 日商尼康股份有限公司 測量裝置、微影系統及曝光裝置、以及元件製造方法
WO2016136691A1 (ja) 2015-02-23 2016-09-01 株式会社ニコン 基板処理システム及び基板処理方法、並びにデバイス製造方法
CN111290221B (zh) 2015-02-23 2023-07-28 株式会社尼康 测量装置、光刻系统、曝光装置、测量方法、曝光方法以及元件制造方法
JP6819887B2 (ja) * 2015-09-30 2021-01-27 株式会社ニコン 露光装置及び露光方法、並びにフラットパネルディスプレイ製造方法
CN111929992A (zh) 2015-09-30 2020-11-13 株式会社尼康 移动体装置、曝光装置、平面显示器的制造方法、及元件制造方法、以及物体的移动方法
WO2017057583A1 (ja) 2015-09-30 2017-04-06 株式会社ニコン 露光装置、フラットパネルディスプレイの製造方法、デバイス製造方法、及び露光方法
US10732510B2 (en) * 2015-09-30 2020-08-04 Nikon Corporation Exposure apparatus and exposure method, and flat panel display manufacturing method
US10802407B2 (en) 2015-09-30 2020-10-13 Nikon Corporation Exposure apparatus, exposure method, manufacturing method of flat-panel display, and device manufacturing method
CN108139677B (zh) 2015-09-30 2021-06-22 株式会社尼康 曝光装置、平面显示器之制造方法、以及元件制造方法
JP6828688B2 (ja) 2015-09-30 2021-02-10 株式会社ニコン 露光装置及び露光方法、並びにフラットパネルディスプレイ製造方法
CN113900361B (zh) * 2015-09-30 2024-02-09 株式会社尼康 曝光装置及曝光方法、以及平面显示器制造方法
KR20180058734A (ko) 2015-09-30 2018-06-01 가부시키가이샤 니콘 노광 장치, 플랫 패널 디스플레이의 제조 방법, 디바이스 제조 방법, 및 노광 방법
WO2017057465A1 (ja) * 2015-09-30 2017-04-06 株式会社ニコン 移動体装置、露光装置、フラットパネルディスプレイの製造方法、及びデバイス製造方法、並びに計測方法
US10338481B2 (en) * 2015-10-27 2019-07-02 Asml Holding N.V. Polarization independent metrology system
US10585357B2 (en) 2015-12-28 2020-03-10 Asml Netherlands B.V. Alternative target design for metrology using modulation techniques
CN205427436U (zh) * 2016-03-23 2016-08-03 北京京东方光电科技有限公司 显示器件的对位检测设备及曝光工艺系统
JP6925783B2 (ja) * 2016-05-26 2021-08-25 株式会社アドテックエンジニアリング パターン描画装置及びパターン描画方法
JP6438441B2 (ja) * 2016-08-04 2018-12-12 ファナック株式会社 エンコーダの信号処理装置、エンコーダ、信号処理方法及びプログラム
CN109863457A (zh) * 2016-08-24 2019-06-07 株式会社尼康 测量系统及基板处理系统、以及元件制造方法
JP6855011B2 (ja) 2016-09-30 2021-04-07 株式会社ニコン 露光装置、フラットパネルディスプレイの製造方法、デバイス製造方法、及び露光方法
CN113641082B (zh) * 2016-09-30 2023-10-24 株式会社尼康 移动体装置、移动方法、曝光装置、曝光方法、平板显示器的制造方法、以及器件制造方法
JP6791255B2 (ja) 2016-09-30 2020-11-25 株式会社ニコン 搬送装置、露光装置、露光方法、フラットパネルディスプレイの製造方法、デバイス製造方法、及び搬送方法
CN113504712B (zh) * 2016-09-30 2023-09-19 株式会社尼康 曝光装置、平板显示器的制造方法、以及元件制造方法
WO2018077873A1 (en) * 2016-10-27 2018-05-03 Asml Netherlands B.V. System and method for determining and calibrating a position of a stage
WO2018083930A1 (ja) * 2016-11-01 2018-05-11 株式会社島津製作所 放射線断層撮影装置の撮像倍率校正方法
EP3581984A4 (en) * 2017-03-14 2021-01-13 Pioneer Corporation DISPLAY DEVICE
US10877370B2 (en) * 2017-07-31 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Stretchable layout design for EUV defect mitigation
CN107806822B (zh) * 2017-09-21 2020-06-09 中国科学院长春光学精密机械与物理研究所 一种测量装置
CN107687814B (zh) * 2017-09-21 2020-05-12 中国科学院长春光学精密机械与物理研究所 一种测量装置
TWI663845B (zh) * 2017-11-09 2019-06-21 美商Tt電子公司 光學編碼裝置及方法
US10481421B2 (en) * 2018-03-02 2019-11-19 Gooch & Housego Plc Mounting ring for maintaining optical device alignment
JP7137363B2 (ja) * 2018-06-11 2022-09-14 キヤノン株式会社 露光方法、露光装置、物品の製造方法及び計測方法
DE102019210274A1 (de) 2019-07-11 2021-01-14 Dr. Johannes Heidenhain Gmbh Optische Positionsmesseinrichtung
US11764111B2 (en) * 2019-10-24 2023-09-19 Texas Instruments Incorporated Reducing cross-wafer variability for minimum width resistors
CN113155053B (zh) 2020-01-22 2024-09-06 株式会社三丰 三维几何形状测量装置和三维几何形状测量方法
JP7360978B2 (ja) * 2020-03-18 2023-10-13 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置
CN111580455B (zh) * 2020-06-05 2021-06-25 广东省智能制造研究所 一种数控设备的定位精度可靠性评估方法
US11874144B2 (en) * 2020-07-28 2024-01-16 Li Lin Displacement measurement system
JP7633045B2 (ja) 2021-03-09 2025-02-19 株式会社Screenホールディングス 露光方法および露光装置
JP7633044B2 (ja) 2021-03-09 2025-02-19 株式会社Screenホールディングス 露光方法および露光装置
JP2023000112A (ja) * 2021-06-17 2023-01-04 キオクシア株式会社 計測装置および計測プログラム
CN113552534B (zh) * 2021-08-05 2022-02-01 中国人民解放军战略支援部队航天工程大学 基于脉冲信号的旋转基线干涉仪相位标校方法
TWI791343B (zh) * 2021-12-01 2023-02-01 財團法人工業技術研究院 旋轉軸的幾何誤差的獲取方法與獲取設備
CN116674205B (zh) * 2023-08-01 2023-12-15 易加三维增材技术(杭州)有限公司 位移控制方法、装置、非易失性存储介质及电子设备
CN117733873B (zh) * 2024-02-19 2024-04-19 深圳市德富莱智能科技股份有限公司 一种三维自动校准系统
CN118565393B (zh) * 2024-07-29 2024-10-18 汇丰金属科技(溧阳)有限公司 一种粉末冶金轴承精度检测装置

Family Cites Families (210)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE224448C (zh)
US4465A (en) 1846-04-18 Improvement in plows
DE221563C (zh)
US368A (en) 1837-08-31 John williamson
US4215938A (en) * 1978-09-28 1980-08-05 Farrand Industries, Inc. Method and apparatus for correcting the error of a position measuring interferometer
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57117238A (en) 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPS5919912A (ja) 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
DD221563A1 (de) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
JPS60119407A (ja) * 1983-11-30 1985-06-26 Nippon Kogaku Kk <Nikon> 比較検査装置
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
US4780617A (en) 1984-08-09 1988-10-25 Nippon Kogaku K.K. Method for successive alignment of chip patterns on a substrate
JPS6144429A (ja) 1984-08-09 1986-03-04 Nippon Kogaku Kk <Nikon> 位置合わせ方法、及び位置合せ装置
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JPS63292005A (ja) * 1987-05-25 1988-11-29 Nikon Corp 走り誤差補正をなした移動量検出装置
US5070250A (en) 1989-02-28 1991-12-03 Nikon Corporation Position detection apparatus with adjustable beam and interference fringe positions
US5489986A (en) * 1989-02-28 1996-02-06 Nikon Corporation Position detecting apparatus
US5021649A (en) * 1989-03-28 1991-06-04 Canon Kabushiki Kaisha Relief diffraction grating encoder
JP2784225B2 (ja) 1989-11-28 1998-08-06 双葉電子工業株式会社 相対移動量測定装置
JP3077149B2 (ja) * 1990-01-22 2000-08-14 株式会社ニコン 測定装置、測定方法、及び露光装置、露光方法、及び回路パターンチップ
US5523843A (en) * 1990-07-09 1996-06-04 Canon Kabushiki Kaisha Position detecting system
DE4033556A1 (de) * 1990-10-22 1992-04-23 Suess Kg Karl Messanordnung fuer x,y,(phi)-koordinatentische
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JP3149472B2 (ja) * 1991-08-30 2001-03-26 株式会社ニコン 走査露光装置および物体の移動測定装置
US5506684A (en) 1991-04-04 1996-04-09 Nikon Corporation Projection scanning exposure apparatus with synchronous mask/wafer alignment system
JP3030386B2 (ja) 1991-05-15 2000-04-10 敏一 中村 抗ガン剤
DE4219311C2 (de) * 1991-06-13 1996-03-07 Sony Magnescale Inc Verschiebungsdetektor
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるlsi製造縮小投影露光装置の光学系
JPH05129184A (ja) * 1991-10-30 1993-05-25 Canon Inc 投影露光装置
JPH05173639A (ja) * 1991-12-20 1993-07-13 Fujitsu Ltd 位置制御装置及びその制御方法
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP3316833B2 (ja) 1993-03-26 2002-08-19 株式会社ニコン 走査露光方法、面位置設定装置、走査型露光装置、及び前記方法を使用するデバイス製造方法
KR100300618B1 (ko) 1992-12-25 2001-11-22 오노 시게오 노광방법,노광장치,및그장치를사용하는디바이스제조방법
JP3303386B2 (ja) 1993-02-03 2002-07-22 株式会社ニコン 投影露光装置及び方法
US5461237A (en) * 1993-03-26 1995-10-24 Nikon Corporation Surface-position setting apparatus
US5583609A (en) 1993-04-23 1996-12-10 Nikon Corporation Projection exposure apparatus
JP3375076B2 (ja) 1993-04-27 2003-02-10 株式会社ニコン 投影露光方法及び装置、並びに素子製造方法
JP3309871B2 (ja) * 1993-04-27 2002-07-29 株式会社ニコン 投影露光方法及び装置、並びに素子製造方法
US5581324A (en) 1993-06-10 1996-12-03 Nikon Corporation Thermal distortion compensated projection exposure method and apparatus for manufacturing semiconductors
JP3319819B2 (ja) * 1993-06-25 2002-09-03 株式会社リコー 画像形成装置管理システム
US6122036A (en) 1993-10-21 2000-09-19 Nikon Corporation Projection exposure apparatus and method
JPH09223650A (ja) 1996-02-15 1997-08-26 Nikon Corp 露光装置
US5625453A (en) * 1993-10-26 1997-04-29 Canon Kabushiki Kaisha System and method for detecting the relative positional deviation between diffraction gratings and for measuring the width of a line constituting a diffraction grating
JP3382389B2 (ja) * 1993-10-26 2003-03-04 キヤノン株式会社 位置ずれ検出方法及びそれを用いた位置ずれ検出装置
JPH07190741A (ja) * 1993-12-27 1995-07-28 Nippon Telegr & Teleph Corp <Ntt> 測定誤差補正法
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
JPH07270122A (ja) * 1994-03-30 1995-10-20 Canon Inc 変位検出装置、該変位検出装置を備えた露光装置およびデバイスの製造方法
JPH07318699A (ja) * 1994-05-27 1995-12-08 Canon Inc ステージ装置及びこれを有する露光装置とデバイス製造方法
US6018384A (en) 1994-09-07 2000-01-25 Nikon Corporation Projection exposure system
JP3379238B2 (ja) 1994-09-08 2003-02-24 株式会社ニコン 走査型露光装置
JPH0883753A (ja) * 1994-09-13 1996-03-26 Nikon Corp 焦点検出方法
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316124A (ja) * 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH09115820A (ja) * 1995-10-13 1997-05-02 Nikon Corp 走査型露光装置及び露光方法
JPH09318321A (ja) * 1996-05-30 1997-12-12 Olympus Optical Co Ltd 測長装置
JPH1022218A (ja) * 1996-07-02 1998-01-23 Nikon Corp 基板のアライメント方法
EP2343693A3 (en) * 1996-08-12 2012-09-12 Tyco Electronics Coroporation Acoustic condition sensor employing a plurality of mutually non-orthogonal waves
JPH1063011A (ja) 1996-08-14 1998-03-06 Nikon Corp 走査型露光装置及び走査露光方法
US5917580A (en) * 1996-08-29 1999-06-29 Canon Kabushiki Kaisha Scan exposure method and apparatus
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
EP1944654A3 (en) * 1996-11-28 2010-06-02 Nikon Corporation An exposure apparatus and an exposure method
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
JPH10223528A (ja) 1996-12-30 1998-08-21 Nikon Corp 投影露光装置及び位置合わせ方法
DE69829614T2 (de) 1997-03-10 2006-03-09 Asml Netherlands B.V. Lithographiegerät mit einer positioniervorrichtung mit zwei objekthaltern
JP3963037B2 (ja) * 1997-03-19 2007-08-22 ソニー株式会社 記録装置及び再生装置
JPH10270535A (ja) 1997-03-25 1998-10-09 Nikon Corp 移動ステージ装置、及び該ステージ装置を用いた回路デバイス製造方法
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
JPH1116816A (ja) 1997-06-25 1999-01-22 Nikon Corp 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
JPH11121325A (ja) * 1997-09-03 1999-04-30 Canon Inc 投影露光装置
JP4210871B2 (ja) * 1997-10-31 2009-01-21 株式会社ニコン 露光装置
US6020964A (en) 1997-12-02 2000-02-01 Asm Lithography B.V. Interferometer system and lithograph apparatus including an interferometer system
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
JP3809268B2 (ja) 1997-12-19 2006-08-16 キヤノン株式会社 デバイス製造方法
JPH11191585A (ja) * 1997-12-26 1999-07-13 Canon Inc ステージ装置、およびこれを用いた露光装置、ならびにデバイス製造方法
JPH11233420A (ja) 1998-02-18 1999-08-27 Nikon Corp 投影露光装置及び位置検出方法
KR100819239B1 (ko) 1998-03-11 2008-04-03 가부시키가이샤 니콘 자외 레이저 장치, 레이저 장치, 노광 장치와 노광 방법, 디바이스 제조 방법, 자외광 조사 장치, 물체 패턴 검출 장치, 자외광 조사 방법 및 물체 패턴 검출 방법
US6008610A (en) 1998-03-20 1999-12-28 Nikon Corporation Position control apparatus for fine stages carried by a coarse stage on a high-precision scanning positioning system
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
WO1999060361A1 (fr) 1998-05-19 1999-11-25 Nikon Corporation Instrument et procede de mesure d'aberrations, appareil et procede de sensibilisation par projection incorporant cet instrument, et procede de fabrication de dispositifs associe
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
JP2000068192A (ja) 1998-08-18 2000-03-03 Nikon Corp 露光装置、露光方法及び位置検出方法
US6144118A (en) * 1998-09-18 2000-11-07 General Scanning, Inc. High-speed precision positioning apparatus
EP1014199B1 (en) 1998-12-24 2011-03-30 Canon Kabushiki Kaisha Stage control apparatus, exposure apparatus and method of manufacturing a semiconductor device
TW490596B (en) * 1999-03-08 2002-06-11 Asm Lithography Bv Lithographic projection apparatus, method of manufacturing a device using the lithographic projection apparatus, device manufactured according to the method and method of calibrating the lithographic projection apparatus
US6924884B2 (en) * 1999-03-08 2005-08-02 Asml Netherlands B.V. Off-axis leveling in lithographic projection apparatus
US6381004B1 (en) * 1999-09-29 2002-04-30 Nikon Corporation Exposure apparatus and device manufacturing method
JP2001118768A (ja) * 1999-10-15 2001-04-27 Nikon Corp マスクのアライメント方法および露光装置
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
JP4428781B2 (ja) 1999-12-28 2010-03-10 キヤノン株式会社 光学式ロータリエンコーダ及びモータ制御装置
WO2001052004A1 (en) * 2000-01-11 2001-07-19 Electro Scientific Industries, Inc. Abbe error correction system and method
JP2001308003A (ja) * 2000-02-15 2001-11-02 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
JP2001313250A (ja) 2000-02-25 2001-11-09 Nikon Corp 露光装置、その調整方法、及び前記露光装置を用いるデバイス製造方法
TW546699B (en) 2000-02-25 2003-08-11 Nikon Corp Exposure apparatus and exposure method capable of controlling illumination distribution
JP2001332490A (ja) * 2000-03-14 2001-11-30 Nikon Corp 位置合わせ方法、露光方法、露光装置、及びデバイス製造方法
US6639686B1 (en) 2000-04-13 2003-10-28 Nanowave, Inc. Method of and apparatus for real-time continual nanometer scale position measurement by beam probing as by laser beams and the like of atomic and other undulating surfaces such as gratings or the like relatively moving with respect to the probing beams
JP2002014005A (ja) 2000-04-25 2002-01-18 Nikon Corp 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
US20020041377A1 (en) 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
US6970245B2 (en) * 2000-08-02 2005-11-29 Honeywell International Inc. Optical alignment detection system
JP2002090114A (ja) * 2000-07-10 2002-03-27 Mitsutoyo Corp 光スポット位置センサ及び変位測定装置
JP2002031895A (ja) 2000-07-18 2002-01-31 Nikon Corp 露光装置
TW527526B (en) 2000-08-24 2003-04-11 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby
US7289212B2 (en) * 2000-08-24 2007-10-30 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufacturing thereby
US7561270B2 (en) * 2000-08-24 2009-07-14 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US6557190B2 (en) 2001-08-31 2003-05-06 National Rv Holdings, Inc. Storable bed assembly
JP2002164269A (ja) * 2000-11-27 2002-06-07 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
KR100815222B1 (ko) 2001-02-27 2008-03-19 에이에스엠엘 유에스, 인크. 리소그래피 장치 및 적어도 하나의 레티클 상에 형성된 적어도 두 개의 패턴으로부터의 이미지로 기판 스테이지 상의 필드를 노출시키는 방법
GB2376595B (en) * 2001-03-27 2003-12-24 1 Ltd Method and apparatus to create a sound field
JP2002305140A (ja) * 2001-04-06 2002-10-18 Nikon Corp 露光装置及び基板処理システム
JP4198338B2 (ja) * 2001-07-09 2008-12-17 株式会社 東北テクノアーチ ステージ装置
JP2003031474A (ja) * 2001-07-16 2003-01-31 Oki Electric Ind Co Ltd 露光装置および露光方法
TW529172B (en) * 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
KR20010112204A (ko) * 2001-12-01 2001-12-20 엄경미 위생패드
JP2003249443A (ja) 2001-12-21 2003-09-05 Nikon Corp ステージ装置、ステージ位置管理方法、露光方法及び露光装置、並びにデバイス製造方法
CN100345252C (zh) 2002-01-29 2007-10-24 株式会社尼康 成像状态调节系统、曝光方法和曝光装置以及程序和信息存储介质
US6987555B2 (en) * 2002-04-23 2006-01-17 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
JP4168665B2 (ja) 2002-05-22 2008-10-22 株式会社ニコン 露光方法及び露光装置、デバイス製造方法
JP2004014876A (ja) * 2002-06-07 2004-01-15 Nikon Corp 調整方法、空間像計測方法及び像面計測方法、並びに露光装置
JP3833148B2 (ja) 2002-06-25 2006-10-11 キヤノン株式会社 位置決め装置及びその制御方法、露光装置、デバイスの製造方法、半導体製造工場、露光装置の保守方法
JP2004041362A (ja) 2002-07-10 2004-02-12 Sankyo Kk 弾球遊技機およびスロットマシン
AU2003252349A1 (en) * 2002-07-31 2004-02-16 Nikon Corporation Position measuring method, position control method, exposure method and exposure apparatus, and device manufacturing method
EP1532489A2 (en) 2002-08-23 2005-05-25 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
JP2004101362A (ja) 2002-09-10 2004-04-02 Canon Inc ステージ位置計測および位置決め装置
KR100632889B1 (ko) * 2002-09-20 2006-10-13 에이에스엠엘 네델란즈 비.브이. 2개이상의 파장을 사용하는 리소그래피시스템용정렬시스템 및 정렬방법
CN1245668C (zh) * 2002-10-14 2006-03-15 台湾积体电路制造股份有限公司 曝光系统及其曝光方法
DE60335595D1 (de) * 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
CN101470360B (zh) * 2002-11-12 2013-07-24 Asml荷兰有限公司 光刻装置和器件制造方法
EP2495613B1 (en) 2002-11-12 2013-07-31 ASML Netherlands B.V. Lithographic apparatus
US7393804B2 (en) * 2002-11-18 2008-07-01 Ict Co., Ltd. Exhaust gas purifying catalyst and process for purification of exhaust gas
WO2004051184A1 (ja) * 2002-12-03 2004-06-17 Nikon Corporation 形状計測方法、形状計測装置、チルト計測方法、ステージ装置、露光装置、露光方法、及びデバイス製造方法
KR20050085235A (ko) 2002-12-10 2005-08-29 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
EP1571696A4 (en) * 2002-12-10 2008-03-26 Nikon Corp EXPOSURE DEVICE AND METHOD OF MANUFACTURE
KR101745223B1 (ko) 2003-04-10 2017-06-08 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
SG2012031738A (en) * 2003-04-11 2015-07-30 Nippon Kogaku Kk Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
KR101647934B1 (ko) 2003-05-06 2016-08-11 가부시키가이샤 니콘 투영 광학계, 노광 장치 및 노광 방법
US7025498B2 (en) * 2003-05-30 2006-04-11 Asml Holding N.V. System and method of measuring thermal expansion
JP4437474B2 (ja) * 2003-06-19 2010-03-24 株式会社ニコン 露光装置及びデバイス製造方法
US20050027487A1 (en) * 2003-07-15 2005-02-03 Supriya Iyer Product defect analysis and resolution system
JP4492239B2 (ja) * 2003-07-28 2010-06-30 株式会社ニコン 露光装置及びデバイス製造方法、並びに露光装置の制御方法
KR20190002749A (ko) * 2003-07-28 2019-01-08 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
KR101381563B1 (ko) * 2003-08-21 2014-04-04 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
JP4524601B2 (ja) * 2003-10-09 2010-08-18 株式会社ニコン 露光装置及び露光方法、デバイス製造方法
TWI295408B (en) * 2003-10-22 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method, and measurement system
JP2005159322A (ja) * 2003-10-31 2005-06-16 Nikon Corp 定盤、ステージ装置及び露光装置並びに露光方法
US7589822B2 (en) * 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US7102729B2 (en) * 2004-02-03 2006-09-05 Asml Netherlands B.V. Lithographic apparatus, measurement system, and device manufacturing method
WO2005076325A1 (ja) 2004-02-04 2005-08-18 Nikon Corporation 露光装置及び方法、位置制御方法並びにデバイス製造方法
JP2005252246A (ja) 2004-02-04 2005-09-15 Nikon Corp 露光装置及び方法、位置制御方法、並びにデバイス製造方法
JP4429037B2 (ja) * 2004-02-27 2010-03-10 キヤノン株式会社 ステージ装置及びその制御方法
JP2005249452A (ja) 2004-03-02 2005-09-15 Konica Minolta Medical & Graphic Inc リニアエンコーダ、画像読取装置及び画像記録装置
JP4622340B2 (ja) 2004-03-04 2011-02-02 株式会社ニコン 露光装置、デバイス製造方法
JP2005268608A (ja) 2004-03-19 2005-09-29 Sumitomo Heavy Ind Ltd ステージ装置
JP2005283357A (ja) * 2004-03-30 2005-10-13 Sendai Nikon:Kk 光電式エンコーダ
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4751032B2 (ja) 2004-04-22 2011-08-17 株式会社森精機製作所 変位検出装置
US20050241694A1 (en) 2004-04-29 2005-11-03 Red Flame Hot Tap Services Ltd. Hot tapping method, system and apparatus
US7126109B2 (en) * 2004-06-14 2006-10-24 Gsi Group Corporation Encoder scale error compensation employing comparison among multiple detectors
JP4873242B2 (ja) 2004-06-22 2012-02-08 株式会社ニコン ベストフォーカス検出方法及び露光方法、並びに露光装置
US20060013959A1 (en) * 2004-07-15 2006-01-19 Morales Hector D Process to apply a polimeric coating on non-ferrous substrates
US7256871B2 (en) * 2004-07-27 2007-08-14 Asml Netherlands B.V. Lithographic apparatus and method for calibrating the same
US7701550B2 (en) * 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006030902A1 (ja) 2004-09-17 2006-03-23 Nikon Corporation 露光装置、露光方法及びデバイス製造方法
JP4852951B2 (ja) * 2004-09-17 2012-01-11 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
CN101052916B (zh) 2004-09-30 2010-05-12 株式会社尼康 投影光学设备和曝光装置
EP2426700B1 (en) * 2004-10-15 2018-01-10 Nikon Corporation Exposure apparatus and device manufacturing method
JP4424739B2 (ja) 2004-10-19 2010-03-03 キヤノン株式会社 ステージ装置
US7388663B2 (en) * 2004-10-28 2008-06-17 Asml Netherlands B.V. Optical position assessment apparatus and method
KR101318037B1 (ko) * 2004-11-01 2013-10-14 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
TWI649790B (zh) * 2004-11-18 2019-02-01 日商尼康股份有限公司 位置測量方法、位置控制方法、測量方法、裝載方法、曝光方法及曝光裝置、及元件製造方法
JP4807629B2 (ja) 2004-11-25 2011-11-02 株式会社ニコン 露光装置及びデバイス製造方法
US20060139595A1 (en) * 2004-12-27 2006-06-29 Asml Netherlands B.V. Lithographic apparatus and method for determining Z position errors/variations and substrate table flatness
JP4450739B2 (ja) 2005-01-21 2010-04-14 富士フイルム株式会社 露光装置
JP2006210570A (ja) 2005-01-27 2006-08-10 Nikon Corp 調整方法、露光装置
US7161659B2 (en) * 2005-04-08 2007-01-09 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US7515281B2 (en) * 2005-04-08 2009-04-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7349069B2 (en) * 2005-04-20 2008-03-25 Asml Netherlands B.V. Lithographic apparatus and positioning apparatus
US7405811B2 (en) * 2005-04-20 2008-07-29 Asml Netherlands B.V. Lithographic apparatus and positioning apparatus
JP2007054987A (ja) * 2005-08-23 2007-03-08 Soshiodaiya Systems Kk 印刷装置及び印刷方法
US7348574B2 (en) * 2005-09-02 2008-03-25 Asml Netherlands, B.V. Position measurement system and lithographic apparatus
US7362446B2 (en) * 2005-09-15 2008-04-22 Asml Netherlands B.V. Position measurement unit, measurement system and lithographic apparatus comprising such position measurement unit
JP2007093546A (ja) * 2005-09-30 2007-04-12 Nikon Corp エンコーダシステム、ステージ装置及び露光装置
US7978339B2 (en) * 2005-10-04 2011-07-12 Asml Netherlands B.V. Lithographic apparatus temperature compensation
JP4164508B2 (ja) * 2005-10-04 2008-10-15 キヤノン株式会社 露光装置及びデバイス製造方法
SG2014011563A (en) 2006-01-19 2014-05-29 Nippon Kogaku Kk Movable body drive method, movable body drive system, pattern formation method, pattern forming apparatus, exposure method, exposure apparatus, and device manufacturing method
EP2003679B1 (en) * 2006-02-21 2016-11-16 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
CN101385121B (zh) 2006-02-21 2011-04-20 株式会社尼康 图案形成装置及图案形成方法、移动体驱动系统及移动体驱动方法、曝光装置及曝光方法、以及组件制造方法
KR20090015888A (ko) * 2006-02-21 2009-02-12 가부시키가이샤 니콘 위치 계측 장치 및 위치 계측 방법, 이동체 구동 시스템 및이동체 구동 방법, 패턴 형성 장치 및 패턴 형성 방법, 노광 장치 및 노광 방법, 그리고 디바이스 제조 방법
WO2007097466A1 (ja) * 2006-02-21 2007-08-30 Nikon Corporation 測定装置及び方法、処理装置及び方法、パターン形成装置及び方法、露光装置及び方法、並びにデバイス製造方法
US7602489B2 (en) * 2006-02-22 2009-10-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7253875B1 (en) * 2006-03-03 2007-08-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7636165B2 (en) * 2006-03-21 2009-12-22 Asml Netherlands B.V. Displacement measurement systems lithographic apparatus and device manufacturing method
US7576832B2 (en) 2006-05-04 2009-08-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7483120B2 (en) * 2006-05-09 2009-01-27 Asml Netherlands B.V. Displacement measurement system, lithographic apparatus, displacement measurement method and device manufacturing method
JP4393540B2 (ja) 2006-08-01 2010-01-06 シャープ株式会社 樹脂含有粒子の凝集体の製造方法、トナー、現像剤、現像装置および画像形成装置
US20080050680A1 (en) * 2006-08-24 2008-02-28 Stefan Brandl Lithography systems and methods
KR101585370B1 (ko) * 2006-08-31 2016-01-14 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법
KR101565272B1 (ko) * 2006-08-31 2015-11-02 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법
CN104460241B (zh) * 2006-08-31 2017-04-05 株式会社尼康 移动体驱动系统及方法、图案形成装置及方法、曝光装置及方法、组件制造方法
TWI434326B (zh) * 2006-09-01 2014-04-11 尼康股份有限公司 Mobile body driving method and moving body driving system, pattern forming method and apparatus, exposure method and apparatus, component manufacturing method, and correcting method
KR101442449B1 (ko) * 2006-09-01 2014-09-22 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법
US7619207B2 (en) * 2006-11-08 2009-11-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7903866B2 (en) 2007-03-29 2011-03-08 Asml Netherlands B.V. Measurement system, lithographic apparatus and method for measuring a position dependent signal of a movable object
US7710540B2 (en) * 2007-04-05 2010-05-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8547527B2 (en) * 2007-07-24 2013-10-01 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and pattern formation apparatus, and device manufacturing method
TW201443578A (zh) * 2007-12-28 2014-11-16 尼康股份有限公司 曝光裝置、移動體驅動系統、圖案形成裝置、及曝光方法、以及元件製造方法

Also Published As

Publication number Publication date
EP2065920A4 (en) 2014-05-14
JP6143138B2 (ja) 2017-06-07
TW201802615A (zh) 2018-01-16
JP2016128929A (ja) 2016-07-14
KR20170007549A (ko) 2017-01-18
KR101711323B1 (ko) 2017-02-28
CN101405840B (zh) 2012-01-18
HK1224021A1 (zh) 2017-08-11
US10353301B2 (en) 2019-07-16
KR20160006805A (ko) 2016-01-19
EP3418807A1 (en) 2018-12-26
KR20180011878A (ko) 2018-02-02
CN102520588B (zh) 2014-10-15
JP6029037B2 (ja) 2016-11-24
JP6143125B2 (ja) 2017-06-07
US20180246421A1 (en) 2018-08-30
JP6143122B2 (ja) 2017-06-07
US9958792B2 (en) 2018-05-01
JP5999392B2 (ja) 2016-09-28
KR20130105910A (ko) 2013-09-26
JP2016106254A (ja) 2016-06-16
KR101670638B1 (ko) 2016-11-09
TW201614391A (en) 2016-04-16
CN102520588A (zh) 2012-06-27
TWI594083B (zh) 2017-08-01
EP2991101B1 (en) 2017-04-12
JP2016028285A (ja) 2016-02-25
US20190004440A1 (en) 2019-01-03
TW201614392A (en) 2016-04-16
EP2991101A3 (en) 2016-04-20
JP2015109457A (ja) 2015-06-11
HK1218187A1 (zh) 2017-02-03
KR20140098829A (ko) 2014-08-08
HK1169863A1 (zh) 2013-02-08
KR101585370B1 (ko) 2016-01-14
KR101400615B1 (ko) 2014-05-27
WO2008026742A1 (fr) 2008-03-06
US20190011843A1 (en) 2019-01-10
US20080094592A1 (en) 2008-04-24
JP2013258418A (ja) 2013-12-26
JP5729578B2 (ja) 2015-06-03
KR20130105909A (ko) 2013-09-26
KR101477448B1 (ko) 2014-12-29
EP2991101A2 (en) 2016-03-02
KR20150008897A (ko) 2015-01-23
EP2065920A1 (en) 2009-06-03
EP3312676A1 (en) 2018-04-25
KR101933360B1 (ko) 2018-12-27
KR20160006238A (ko) 2016-01-18
KR20150008898A (ko) 2015-01-23
EP3067748A1 (en) 2016-09-14
KR20150092342A (ko) 2015-08-12
HK1259005A1 (zh) 2019-11-22
CN101405840A (zh) 2009-04-08
TW201403263A (zh) 2014-01-16
JP2018041090A (ja) 2018-03-15
KR101670639B1 (ko) 2016-10-28
HK1168662A1 (zh) 2013-01-04
KR20090045885A (ko) 2009-05-08
EP2738608B9 (en) 2016-08-17
EP3064999B1 (en) 2017-07-26
JP2012147026A (ja) 2012-08-02
JP6508285B2 (ja) 2019-05-08
CN102520589A (zh) 2012-06-27
KR101565275B1 (ko) 2015-11-02
KR101824374B1 (ko) 2018-01-31
KR20160006804A (ko) 2016-01-19
HK1248325B (zh) 2020-04-09
US20140049759A1 (en) 2014-02-20
US20140049758A1 (en) 2014-02-20
JP5522489B2 (ja) 2014-06-18
TWI653511B (zh) 2019-03-11
KR20160006237A (ko) 2016-01-18
JP2012138621A (ja) 2012-07-19
EP3312676B1 (en) 2019-05-15
JP5686164B2 (ja) 2015-03-18
JP2017010043A (ja) 2017-01-12
JP2016027414A (ja) 2016-02-18
KR20180137600A (ko) 2018-12-27
US10338482B2 (en) 2019-07-02
EP2993688B1 (en) 2017-04-05
CN102520589B (zh) 2015-07-15
TW201403262A (zh) 2014-01-16
EP2065920B1 (en) 2016-07-06
JPWO2008026742A1 (ja) 2010-01-21
KR101698291B1 (ko) 2017-02-01
EP2738608B1 (en) 2016-06-01
HK1224022A1 (zh) 2017-08-11
SG10201407395SA (en) 2014-12-30
JP2014199933A (ja) 2014-10-23
JP5035245B2 (ja) 2012-09-26
KR101409011B1 (ko) 2014-06-18
JP2015179290A (ja) 2015-10-08
TWI649631B (zh) 2019-02-01
HK1218184A1 (zh) 2017-02-03
TWI537687B (zh) 2016-06-11
TW201614393A (en) 2016-04-16
EP2738608A1 (en) 2014-06-04
KR101645909B1 (ko) 2016-08-12
EP2993688A2 (en) 2016-03-09
HK1130944A1 (zh) 2010-01-08
JP5522488B2 (ja) 2014-06-18
TW201631409A (zh) 2016-09-01
JP6241632B2 (ja) 2017-12-06
TW200830055A (en) 2008-07-16
EP3064999A1 (en) 2016-09-07
TWI416269B (zh) 2013-11-21
EP2993688A3 (en) 2016-04-20
TWI602032B (zh) 2017-10-11
JP6339599B2 (ja) 2018-06-06
TWI596444B (zh) 2017-08-21
KR101529845B1 (ko) 2015-06-17
TWI529501B (zh) 2016-04-11
EP3067748B1 (en) 2017-12-20
SG174091A1 (en) 2011-09-29
US10353302B2 (en) 2019-07-16
US9983486B2 (en) 2018-05-29

Similar Documents

Publication Publication Date Title
HK1252345A1 (zh) 曝光裝置和曝光方法
HK1193879A1 (zh) 曝光設備和曝光方法
HK1197695A1 (zh) 曝光裝置與曝光方法
HK1220516A1 (zh) 曝光裝置與曝光方法
TWI348596B (en) Exposure apparatus and method
HK1199771A1 (zh) 曝光裝置和方法
TWI317807B (en) Positioning apparatus and method
HK1127961A1 (en) Exposure apparatus and device manufacturing method
GB0625526D0 (en) Apparatus and method
GB2438875B (en) Photo apparatus and method
EP1993121A4 (en) EXPOSURE DEVICE AND COMPONENT MANUFACTURING METHOD
GB0616555D0 (en) Apparatus and method
GB0625191D0 (en) Apparatus and method
EP2092454A4 (en) METHOD AND DEVICE FOR GEOMODELL SHARING
GB2442608B (en) Apparatus and method
TWI347597B (en) Recording-and-reproducing apparatus and content-managing method
GB0623475D0 (en) Imaging method and apparatus
GB0701010D0 (en) Method and apparatus
GB0615752D0 (en) Method and apparatus
GB0609349D0 (en) Method and apparatus
GB2437303B (en) Fixing apparatus and method
GB0618942D0 (en) Apparatus and method
GB0704868D0 (en) Method and apparatus
GB0624916D0 (en) Apparatus and method
GB0611982D0 (en) Method and apparatus

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20200903