FR2344967A1 - Transistor a effet de champ a canal de longueur tres courte - Google Patents

Transistor a effet de champ a canal de longueur tres courte

Info

Publication number: FR2344967A1
Authority: FR; France
Prior art keywords: effect transistor; short length; channel field; length channel; short
Prior art date: 1976-03-17
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

FR7706922A

Other languages

English (en)

Other versions

FR2344967B1 (fr

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Siemens Corp

Original Assignee

Siemens Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1976-03-17

Filing date

1977-03-09

Publication date

1977-10-14

1977-03-09 Application filed by Siemens Corp filed Critical Siemens Corp

1977-10-14 Publication of FR2344967A1 publication Critical patent/FR2344967A1/fr

1980-01-11 Application granted granted Critical

1980-01-11 Publication of FR2344967B1 publication Critical patent/FR2344967B1/fr

Status Granted legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/63—Vertical IGFETs

FR7706922A 1976-03-17 1977-03-09 Transistor a effet de champ a canal de longueur tres courte Granted FR2344967A1 (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE2611338A DE2611338C3 (de)	1976-03-17	1976-03-17	Feldeffekttransistor mit sehr kurzer Kanallange

Publications (2)

Publication Number	Publication Date
FR2344967A1 true FR2344967A1 (fr)	1977-10-14
FR2344967B1 FR2344967B1 (fr)	1980-01-11

Family

ID=5972731

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR7706922A Granted FR2344967A1 (fr)	1976-03-17	1977-03-09	Transistor a effet de champ a canal de longueur tres courte

Country Status (9)

Country	Link
US (1)	US4101922A (fr)
JP (1)	JPS52113685A (fr)
CA (1)	CA1081368A (fr)
CH (1)	CH614072A5 (fr)
DE (1)	DE2611338C3 (fr)
FR (1)	FR2344967A1 (fr)
GB (1)	GB1576488A (fr)
IT (1)	IT1077520B (fr)
NL (1)	NL7701776A (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0031377A1 (fr) *	1979-07-05	1981-07-08	Western Electric Company, Incorporated	Tec vertical de porte flottante
EP0335632A2 (fr) *	1988-03-29	1989-10-04	Xerox Corporation	Transistor en couche mince à fort courant
EP0703629A2 (fr) *	1994-08-30	1996-03-27	Daimler-Benz Aktiengesellschaft	Transistor à effet de champ vertical de puissance
WO1997033322A1 (fr) *	1996-03-04	1997-09-12	Daimler-Benz Aktiengesellschaft	Transistor a effet de champ de puissance
EP0869558A2 (fr) *	1997-03-31	1998-10-07	Motorola, Inc.	Transistor bipolaire à grille isolée avec un champ électrique réduit

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5191396B1 (en) *	1978-10-13	1995-12-26	Int Rectifier Corp	High power mosfet with low on-resistance and high breakdown voltage
JPS5553462A (en) *	1978-10-13	1980-04-18	Int Rectifier Corp	Mosfet element
US4366495A (en) *	1979-08-06	1982-12-28	Rca Corporation	Vertical MOSFET with reduced turn-on resistance
US4442589A (en) *	1981-03-05	1984-04-17	International Business Machines Corporation	Method for manufacturing field effect transistors
US4837175A (en) *	1983-02-15	1989-06-06	Eaton Corporation	Making a buried channel FET with lateral growth over amorphous region
US4833095A (en) *	1985-02-19	1989-05-23	Eaton Corporation	Method for buried channel field effect transistor for microwave and millimeter frequencies utilizing ion implantation
US4724220A (en) *	1985-02-19	1988-02-09	Eaton Corporation	Method for fabricating buried channel field-effect transistor for microwave and millimeter frequencies
US4935789A (en) *	1985-02-19	1990-06-19	Eaton Corporation	Buried channel FET with lateral growth over amorphous region
US5231474A (en) *	1986-03-21	1993-07-27	Advanced Power Technology, Inc.	Semiconductor device with doped electrical breakdown control region
US4862232A (en) *	1986-09-22	1989-08-29	General Motors Corporation	Transistor structure for high temperature logic circuits with insulation around source and drain regions
US4818715A (en) *	1987-07-09	1989-04-04	Industrial Technology Research Institute	Method of fabricating a LDDFET with self-aligned silicide
US4835586A (en) *	1987-09-21	1989-05-30	Siliconix Incorporated	Dual-gate high density fet
US4893160A (en) *	1987-11-13	1990-01-09	Siliconix Incorporated	Method for increasing the performance of trenched devices and the resulting structure
JPH0557532U (ja) *	1992-01-08	1993-07-30	株式会社栗本鐵工所	仕切弁
JPH0621447A (ja) *	1992-04-27	1994-01-28	Internatl Business Mach Corp <Ibm>	短チャネル電界効果トランジスタ
KR0166101B1 (ko) *	1993-10-21	1999-01-15	김주용	정전방전 보호회로의 트랜지스터 및 그 제조방법
US5701023A (en) *	1994-08-03	1997-12-23	National Semiconductor Corporation	Insulated gate semiconductor device typically having subsurface-peaked portion of body region for improved ruggedness
US5869371A (en) *	1995-06-07	1999-02-09	Stmicroelectronics, Inc.	Structure and process for reducing the on-resistance of mos-gated power devices
DE19840032C1 (de)	1998-09-02	1999-11-18	Siemens Ag	Halbleiterbauelement und Herstellungsverfahren dazu
DE19961297A1 (de)	1999-12-18	2001-06-21	Bosch Gmbh Robert	Schaltungsanordnung zur Verpolsicherung eines DMOS-Transistors
US6646840B1 (en) *	2000-08-03	2003-11-11	Fairchild Semiconductor Corporation	Internally triggered electrostatic device clamp with stand-off voltage
US6828609B2 (en) *	2001-11-09	2004-12-07	Infineon Technologies Ag	High-voltage semiconductor component
US6819089B2 (en) *	2001-11-09	2004-11-16	Infineon Technologies Ag	Power factor correction circuit with high-voltage semiconductor component
KR200446584Y1 (ko)	2008-01-02	2009-11-11	최용석	조립구조를 개선 시킨 침대 매트리스용 보조스프링

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5123432B2 (fr) *	1971-08-26	1976-07-16
JPS5611227B2 (fr) *	1973-07-10	1981-03-12
US3982263A (en) *	1974-05-02	1976-09-21	National Semiconductor Corporation	Integrated circuit device comprising vertical channel FET resistor

1976
- 1976-03-17 DE DE2611338A patent/DE2611338C3/de not_active Expired
1977
- 1977-02-09 CH CH153477A patent/CH614072A5/xx not_active IP Right Cessation
- 1977-02-18 NL NL7701776A patent/NL7701776A/xx not_active Application Discontinuation
- 1977-03-09 FR FR7706922A patent/FR2344967A1/fr active Granted
- 1977-03-09 US US05/775,978 patent/US4101922A/en not_active Expired - Lifetime
- 1977-03-14 GB GB10641/77A patent/GB1576488A/en not_active Expired
- 1977-03-16 CA CA274,075A patent/CA1081368A/fr not_active Expired
- 1977-03-16 IT IT21289/77A patent/IT1077520B/it active
- 1977-03-16 JP JP2913577A patent/JPS52113685A/ja active Granted

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0031377A1 (fr) *	1979-07-05	1981-07-08	Western Electric Company, Incorporated	Tec vertical de porte flottante
EP0031377A4 (fr) *	1979-07-05	1983-04-25	Western Electric Co	Tec vertical de porte flottante.
EP0335632A2 (fr) *	1988-03-29	1989-10-04	Xerox Corporation	Transistor en couche mince à fort courant
EP0335632A3 (fr) *	1988-03-29	1991-01-16	Xerox Corporation	Transistor en couche mince à fort courant
EP0703629A2 (fr) *	1994-08-30	1996-03-27	Daimler-Benz Aktiengesellschaft	Transistor à effet de champ vertical de puissance
EP0703629A3 (fr) *	1994-08-30	1996-11-13	Daimler Benz Ag	Transistor à effet de champ vertical de puissance
WO1997033322A1 (fr) *	1996-03-04	1997-09-12	Daimler-Benz Aktiengesellschaft	Transistor a effet de champ de puissance
EP0869558A2 (fr) *	1997-03-31	1998-10-07	Motorola, Inc.	Transistor bipolaire à grille isolée avec un champ électrique réduit
EP0869558A3 (fr) *	1997-03-31	1999-07-21	Motorola, Inc.	Transistor bipolaire à grille isolée avec un champ électrique réduit

Also Published As

Publication number	Publication date
CA1081368A (fr)	1980-07-08
JPS628952B2 (fr)	1987-02-25
CH614072A5 (fr)	1979-10-31
JPS52113685A (en)	1977-09-22
IT1077520B (it)	1985-05-04
US4101922A (en)	1978-07-18
DE2611338C3 (de)	1979-03-29
FR2344967B1 (fr)	1980-01-11
GB1576488A (en)	1980-10-08
NL7701776A (nl)	1977-09-20
DE2611338B2 (de)	1978-07-27
DE2611338A1 (de)	1977-09-29

Publication	Publication Date	Title
FR2344967A1 (fr)	1977-10-14	Transistor a effet de champ a canal de longueur tres courte
FR2350694A1 (fr)	1977-12-02	Transistor a effet de champ a canal superficiel
FR2532785B1 (fr)	1986-12-12	Transistor a effet de champ metal-oxyde-semiconducteur avec canal perimetrique
FR2312838A1 (fr)	1976-12-24	Amplificateur de detection a transistors a effet de champ
FR2447115B1 (fr)	1986-11-28	Amplificateur a transconductance a effet de champ
FR2538191B1 (fr)	1987-10-16	Amplificateur a paire de transistors a effet de champ de couplage a grilles
FR2345813A1 (fr)	1977-10-21	Procede de realisation d'elements de memoire a transistor a effet de champ
BE853547A (fr)	1977-08-01	Procede de fabrication de transistors a effet de champ
FR2291641A1 (fr)	1976-06-11	Amplificateur a transistors a effet de champ
FR2325149A1 (fr)	1977-04-15	Memoire a transistors a effet de champ
FR2337428A1 (fr)	1977-07-29	Transistor a effet de champ a canal composite et procede de fabrication
FR2520170B1 (fr)	1988-08-05	Oscillateur a transistor a effet de champ
BE878753A (fr)	1980-03-12	Nouveau transistor a effet de champ mos
FR2336829A1 (fr)	1977-07-22	Appareil de selection de canal
FR2289065A1 (fr)	1976-05-21	Amplificateur a transistors a effet de champ complementaires
ES494024A0 (es)	1981-04-16	Un dispositivo transistor mejorado
IT1192768B (it)	1988-05-04	Dispositivo di adattamento di saracinesca
BE874946A (fr)	1979-07-16	Element de commutation photosensible a transistor a effet de champ
FR2280203A1 (fr)	1976-02-20	Procede d'ajustement de tension de seuil de transistors a effet de champ
FR2346855A1 (fr)	1977-10-28	Procede de fabrication de dispositifs a transistors a effet de champ et dispositifs en resultant
BE833633A (fr)	1976-03-19	Transistor a effet de champ de memorisation a canal n
BR7705260A (pt)	1978-05-02	Dispositivo de fiacao de extremidade aberta
FR2458147B1 (fr)	1985-10-31	Transistor a effet de champ a jonction
IT1135748B (it)	1986-08-27	Transistor a effetto di campo a canale corto
FR2330212A1 (fr)	1977-05-27	Convertisseur numerique-analogique a transistors a effet de champ