FR2458147B1 - Transistor a effet de champ a jonction - Google Patents

Transistor a effet de champ a jonction

Info

Publication number: FR2458147B1
Authority: FR; France
Prior art keywords: field effect; effect transistor; junction field; junction; transistor
Prior art date: 1979-05-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

FR8011593A

Other languages

English (en)

Other versions

FR2458147A1 (fr

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Koninklijke Philips NV

Original Assignee

Philips Gloeilampenfabrieken NV

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1979-05-29

Filing date

1980-05-23

Publication date

1985-10-31

1980-05-23 Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV

1980-12-26 Publication of FR2458147A1 publication Critical patent/FR2458147A1/fr

1985-10-31 Application granted granted Critical

1985-10-31 Publication of FR2458147B1 publication Critical patent/FR2458147B1/fr

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/351—Substrate regions of field-effect devices
- H10D62/357—Substrate regions of field-effect devices of FETs

FR8011593A 1979-05-29 1980-05-23 Transistor a effet de champ a jonction Expired FR2458147B1 (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
NL7904200A NL7904200A (nl)	1979-05-29	1979-05-29	Lagenveldeffecttransistor.

Publications (2)

Publication Number	Publication Date
FR2458147A1 FR2458147A1 (fr)	1980-12-26
FR2458147B1 true FR2458147B1 (fr)	1985-10-31

Family

ID=19833263

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR8011593A Expired FR2458147B1 (fr)	1979-05-29	1980-05-23	Transistor a effet de champ a jonction

Country Status (11)

Country	Link
US (1)	US4498094A (fr)
JP (1)	JPS6044834B2 (fr)
AU (1)	AU537860B2 (fr)
CA (1)	CA1150854A (fr)
DE (1)	DE3019927A1 (fr)
ES (1)	ES491862A0 (fr)
FR (1)	FR2458147B1 (fr)
GB (1)	GB2052860B (fr)
IT (1)	IT1130764B (fr)
NL (1)	NL7904200A (fr)
SE (1)	SE8003898L (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5957477A (ja) *	1982-09-27	1984-04-03	Fujitsu Ltd	半導体装置
US4622568A (en) *	1984-05-09	1986-11-11	Eaton Corporation	Planar field-shaped bidirectional power FET
JPH01123417A (ja) *	1987-11-07	1989-05-16	Mitsubishi Electric Corp	半導体装置の製造方法
AU643781B2 (en) *	1989-09-26	1993-11-25	Sumitomo Electric Industries, Ltd.	A semiconductor device
DE19644821C1 (de) *	1996-10-29	1998-02-12	Daimler Benz Ag	Steuerbare Halbleiterstruktur mit verbesserten Schalteigenschaften

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL299194A (fr) *	1962-10-15
US3316131A (en) *	1963-08-15	1967-04-25	Texas Instruments Inc	Method of producing a field-effect transistor
US3222810A (en) *	1964-06-23	1965-12-14	Daniel D Musgrave	Magazine loading clip
US3440500A (en) *	1966-09-26	1969-04-22	Itt	High frequency field effect transistor
US3656031A (en) *	1970-12-14	1972-04-11	Tektronix Inc	Low noise field effect transistor with channel having subsurface portion of high conductivity
US4112455A (en) *	1977-01-27	1978-09-05	The United States Of America As Represented By The Secretary Of The Navy	Field-effect transistor with extended linear logarithmic transconductance
US4119996A (en) *	1977-07-20	1978-10-10	The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration	Complementary DMOS-VMOS integrated circuit structure
JPS5846863B2 (ja) *	1977-08-25	1983-10-19	松下電器産業株式会社	半導体集積回路装置
US4176368A (en) *	1978-10-10	1979-11-27	National Semiconductor Corporation	Junction field effect transistor for use in integrated circuits

1979
- 1979-05-29 NL NL7904200A patent/NL7904200A/nl not_active Application Discontinuation
1980
- 1980-05-22 CA CA000352541A patent/CA1150854A/fr not_active Expired
- 1980-05-23 FR FR8011593A patent/FR2458147B1/fr not_active Expired
- 1980-05-23 GB GB8017183A patent/GB2052860B/en not_active Expired
- 1980-05-24 DE DE19803019927 patent/DE3019927A1/de not_active Ceased
- 1980-05-26 IT IT22325/80A patent/IT1130764B/it active
- 1980-05-27 ES ES491862A patent/ES491862A0/es active Granted
- 1980-05-27 JP JP55069715A patent/JPS6044834B2/ja not_active Expired
- 1980-05-27 SE SE8003898A patent/SE8003898L/ not_active Application Discontinuation
- 1980-05-27 AU AU58811/80A patent/AU537860B2/en not_active Ceased
1982
- 1982-06-16 US US06/388,827 patent/US4498094A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
GB2052860B (en)	1983-06-29
FR2458147A1 (fr)	1980-12-26
NL7904200A (nl)	1980-12-02
ES8102418A1 (es)	1980-12-16
CA1150854A (fr)	1983-07-26
DE3019927A1 (de)	1980-12-04
US4498094A (en)	1985-02-05
JPS55158676A (en)	1980-12-10
SE8003898L (sv)	1980-11-30
JPS6044834B2 (ja)	1985-10-05
ES491862A0 (es)	1980-12-16
AU537860B2 (en)	1984-07-19
GB2052860A (en)	1981-01-28
IT8022325A0 (it)	1980-05-26
IT1130764B (it)	1986-06-18
AU5881180A (en)	1980-12-04

Publication	Publication Date	Title
BE854267A (fr)	1977-09-01	Transistor a effet de champ a canal superficiel
FR2447115B1 (fr)	1986-11-28	Amplificateur a transconductance a effet de champ
IL51471A0 (en)	1977-04-29	A high speed field effect transistor
IT1086489B (it)	1985-05-28	Dispositivo di giunzione
JPS54114188A (en)	1979-09-06	Field effect transistor
FR2576711B1 (fr)	1989-02-03	Transistor a effet de champ a heterojonction
JPS5580359A (en)	1980-06-17	Field effect transistor
FR2520170B1 (fr)	1988-08-05	Oscillateur a transistor a effet de champ
BE878753A (fr)	1980-03-12	Nouveau transistor a effet de champ mos
DE3063218D1 (en)	1983-07-07	A field effect transistor
ES494024A0 (es)	1981-04-16	Un dispositivo transistor mejorado
NL193965B (nl)	2000-11-01	Videobandapparaat.
BR8000919A (pt)	1980-10-29	Dispositivo de plantio
IT1140886B (it)	1986-10-10	Dispositivo semiconduttore ad elettroluminescenza
IT1141373B (it)	1986-10-01	Dispositivo a semiconduttore
FR2621739B1 (fr)	1994-03-04	Transistor a effet de champ a grille schottky
JPS567481A (en)	1981-01-26	Field effect type transistor
DE3061079D1 (de)	1982-12-23	Opto-electronic connexion device
FR2458147B1 (fr)	1985-10-31	Transistor a effet de champ a jonction
SE7904154L (sv)	1980-11-12	Doppningsanordning
IT1140550B (it)	1986-10-01	Dispositivo semiconduttore
JPS5698878A (en)	1981-08-08	Junction type field effect transistor
AT367264B (de)	1982-06-25	Tierboxeneinlage
FR2515429B1 (fr)	1986-09-26	Transistor a effet de champ de puissance
FR2543365B1 (fr)	1988-09-23	Transistor a effet de champ

Legal Events

Date	Code	Title
1995-06-09	CD	Change of name or company name
1998-09-18	CD	Change of name or company name
2000-03-03	ST	Notification of lapse