NL7701776A - Veldeffekttransistor met zeer korte kanaallengte. - Google Patents

Veldeffekttransistor met zeer korte kanaallengte.

Info

Publication number: NL7701776A
Authority: NL; Netherlands
Prior art keywords: veldeffekt; transistor; channel length; short channel; short
Prior art date: 1976-03-17

Application number

NL7701776A

Other languages

English (en)

Original Assignee

Siemens Ag

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1976-03-17

Filing date

1977-02-18

Publication date

1977-09-20

1977-02-18 Application filed by Siemens Ag filed Critical Siemens Ag

1977-09-20 Publication of NL7701776A publication Critical patent/NL7701776A/nl

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/63—Vertical IGFETs

NL7701776A 1976-03-17 1977-02-18 Veldeffekttransistor met zeer korte kanaallengte. NL7701776A (nl)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE2611338A DE2611338C3 (de)	1976-03-17	1976-03-17	Feldeffekttransistor mit sehr kurzer Kanallange

Publications (1)

Publication Number	Publication Date
NL7701776A true NL7701776A (nl)	1977-09-20

Family

ID=5972731

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL7701776A NL7701776A (nl)	1976-03-17	1977-02-18	Veldeffekttransistor met zeer korte kanaallengte.

Country Status (9)

Country	Link
US (1)	US4101922A (nl)
JP (1)	JPS52113685A (nl)
CA (1)	CA1081368A (nl)
CH (1)	CH614072A5 (nl)
DE (1)	DE2611338C3 (nl)
FR (1)	FR2344967A1 (nl)
GB (1)	GB1576488A (nl)
IT (1)	IT1077520B (nl)
NL (1)	NL7701776A (nl)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5191396B1 (en) *	1978-10-13	1995-12-26	Int Rectifier Corp	High power mosfet with low on-resistance and high breakdown voltage
JPS5553462A (en) *	1978-10-13	1980-04-18	Int Rectifier Corp	Mosfet element
US4249190A (en) *	1979-07-05	1981-02-03	Bell Telephone Laboratories, Incorporated	Floating gate vertical FET
US4366495A (en) *	1979-08-06	1982-12-28	Rca Corporation	Vertical MOSFET with reduced turn-on resistance
US4442589A (en) *	1981-03-05	1984-04-17	International Business Machines Corporation	Method for manufacturing field effect transistors
US4837175A (en) *	1983-02-15	1989-06-06	Eaton Corporation	Making a buried channel FET with lateral growth over amorphous region
US4833095A (en) *	1985-02-19	1989-05-23	Eaton Corporation	Method for buried channel field effect transistor for microwave and millimeter frequencies utilizing ion implantation
US4724220A (en) *	1985-02-19	1988-02-09	Eaton Corporation	Method for fabricating buried channel field-effect transistor for microwave and millimeter frequencies
US4935789A (en) *	1985-02-19	1990-06-19	Eaton Corporation	Buried channel FET with lateral growth over amorphous region
US5231474A (en) *	1986-03-21	1993-07-27	Advanced Power Technology, Inc.	Semiconductor device with doped electrical breakdown control region
US4862232A (en) *	1986-09-22	1989-08-29	General Motors Corporation	Transistor structure for high temperature logic circuits with insulation around source and drain regions
US4818715A (en) *	1987-07-09	1989-04-04	Industrial Technology Research Institute	Method of fabricating a LDDFET with self-aligned silicide
US4835586A (en) *	1987-09-21	1989-05-30	Siliconix Incorporated	Dual-gate high density fet
US4893160A (en) *	1987-11-13	1990-01-09	Siliconix Incorporated	Method for increasing the performance of trenched devices and the resulting structure
US4990977A (en) *	1988-03-29	1991-02-05	Xerox Corporation	High current thin film transistor
JPH0557532U (ja) *	1992-01-08	1993-07-30	株式会社栗本鐵工所	仕切弁
JPH0621447A (ja) *	1992-04-27	1994-01-28	Internatl Business Mach Corp <Ibm>	短チャネル電界効果トランジスタ
KR0166101B1 (ko) *	1993-10-21	1999-01-15	김주용	정전방전 보호회로의 트랜지스터 및 그 제조방법
US5701023A (en) *	1994-08-03	1997-12-23	National Semiconductor Corporation	Insulated gate semiconductor device typically having subsurface-peaked portion of body region for improved ruggedness
DE4430732C2 (de) *	1994-08-30	1998-07-02	Daimler Benz Ag	Vertikaler Feldeffekt-Transistor hoher Leistung und Verfahren zu dessen Herstellung
US5869371A (en) *	1995-06-07	1999-02-09	Stmicroelectronics, Inc.	Structure and process for reducing the on-resistance of mos-gated power devices
DE19608003C2 (de) *	1996-03-04	2001-11-29	Daimler Chrysler Ag	Leistungs-Feldeffekt-Transistor und Verfahren zu seiner Herstellung
US5917204A (en) *	1997-03-31	1999-06-29	Motorola, Inc.	Insulated gate bipolar transistor with reduced electric fields
DE19840032C1 (de)	1998-09-02	1999-11-18	Siemens Ag	Halbleiterbauelement und Herstellungsverfahren dazu
DE19961297A1 (de)	1999-12-18	2001-06-21	Bosch Gmbh Robert	Schaltungsanordnung zur Verpolsicherung eines DMOS-Transistors
US6646840B1 (en) *	2000-08-03	2003-11-11	Fairchild Semiconductor Corporation	Internally triggered electrostatic device clamp with stand-off voltage
US6828609B2 (en) *	2001-11-09	2004-12-07	Infineon Technologies Ag	High-voltage semiconductor component
US6819089B2 (en) *	2001-11-09	2004-11-16	Infineon Technologies Ag	Power factor correction circuit with high-voltage semiconductor component
KR200446584Y1 (ko)	2008-01-02	2009-11-11	최용석	조립구조를 개선 시킨 침대 매트리스용 보조스프링

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5123432B2 (nl) *	1971-08-26	1976-07-16
JPS5611227B2 (nl) *	1973-07-10	1981-03-12
US3982263A (en) *	1974-05-02	1976-09-21	National Semiconductor Corporation	Integrated circuit device comprising vertical channel FET resistor

1976
- 1976-03-17 DE DE2611338A patent/DE2611338C3/de not_active Expired
1977
- 1977-02-09 CH CH153477A patent/CH614072A5/xx not_active IP Right Cessation
- 1977-02-18 NL NL7701776A patent/NL7701776A/nl not_active Application Discontinuation
- 1977-03-09 FR FR7706922A patent/FR2344967A1/fr active Granted
- 1977-03-09 US US05/775,978 patent/US4101922A/en not_active Expired - Lifetime
- 1977-03-14 GB GB10641/77A patent/GB1576488A/en not_active Expired
- 1977-03-16 CA CA274,075A patent/CA1081368A/en not_active Expired
- 1977-03-16 IT IT21289/77A patent/IT1077520B/it active
- 1977-03-16 JP JP2913577A patent/JPS52113685A/ja active Granted

Also Published As

Publication number	Publication date
CA1081368A (en)	1980-07-08
JPS628952B2 (nl)	1987-02-25
CH614072A5 (nl)	1979-10-31
JPS52113685A (en)	1977-09-22
IT1077520B (it)	1985-05-04
FR2344967A1 (fr)	1977-10-14
US4101922A (en)	1978-07-18
DE2611338C3 (de)	1979-03-29
FR2344967B1 (nl)	1980-01-11
GB1576488A (en)	1980-10-08
DE2611338B2 (de)	1978-07-27
DE2611338A1 (de)	1977-09-29

Publication	Publication Date	Title
NL7701776A (nl)	1977-09-20	Veldeffekttransistor met zeer korte kanaallengte.
NL7704633A (nl)	1977-11-01	Veldeffecttransistor.
NL7704867A (nl)	1977-11-08	Veldeffecttransistor met een oppervlaktekanaal.
NL7700050A (nl)	1978-06-13	Zonnescherm.
DK140821B (da)	1979-11-26	Glideelement.
NL7711251A (nl)	1978-04-25	Elektromedicinale inrichting.
NL7703967A (nl)	1977-10-17	Halfgeleiderinrichting.
NL182605C (nl)	1988-04-05	Hoogfrequent-transistorinrichting.
NO141825C (no)	1980-05-21	Injeksjonsanordning.
NL177956C (nl)	1985-12-16	Fotokoppelinrichting.
NL7702141A (nl)	1977-09-05	Veldeffekt-transistor.
NL7601416A (nl)	1977-08-16	Halfgeleiderinrichting.
NL7703297A (nl)	1977-10-04	Ladingsgekoppelde inrichting.
NL7609052A (nl)	1977-02-16	Veldeffekttransistor.
NL7709886A (nl)	1978-03-14	Componentenstrook.
AR211177A1 (es)	1977-10-31	Carburador.
NL7709281A (nl)	1978-02-28	Halfgeleiderinrichting.
NL7703488A (nl)	1977-10-04	Ventilatie inrichting.
NL7713948A (nl)	1978-06-22	Vermogenstransistor.
NL7704257A (nl)	1977-10-25	Isolerende geleider.
NL7703476A (nl)	1977-10-04	Tril-afsluit-inrichting.
NL7609204A (nl)	1978-02-21	Zonnescherm.
NL7708047A (nl)	1978-01-24	Licht-uitzendende inrichting.
NL165081C (nl)	1981-03-16	Extrudeerinrichting.
NL7713078A (nl)	1978-06-06	Halfgeleiderinrichting.

Legal Events

Date	Code	Title	Description
1984-04-02	BV	The patent application has lapsed