FI955395A0 - Shottky-kynnysjännitediodi - Google Patents
Shottky-kynnysjännitediodiInfo
- Publication number
- FI955395A0 FI955395A0 FI955395A FI955395A FI955395A0 FI 955395 A0 FI955395 A0 FI 955395A0 FI 955395 A FI955395 A FI 955395A FI 955395 A FI955395 A FI 955395A FI 955395 A0 FI955395 A0 FI 955395A0
- Authority
- FI
- Finland
- Prior art keywords
- kynnysjännitediodi
- schottky
- schottky kynnysjännitediodi
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6278035A JPH08139341A (ja) | 1994-11-11 | 1994-11-11 | ショットキ−バリアダイオ−ド |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FI955395A0 true FI955395A0 (fi) | 1995-11-09 |
| FI955395A FI955395A (fi) | 1996-05-12 |
Family
ID=17591746
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI955395A FI955395A (fi) | 1994-11-11 | 1995-11-09 | Shottky-kynnysjännitediodi |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0712167A3 (fi) |
| JP (1) | JPH08139341A (fi) |
| KR (1) | KR100212203B1 (fi) |
| FI (1) | FI955395A (fi) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0964381A (ja) * | 1995-08-25 | 1997-03-07 | Murata Mfg Co Ltd | ショットキーバリアダイオード |
| KR101072992B1 (ko) | 2004-12-30 | 2011-10-12 | 매그나칩 반도체 유한회사 | 쇼트키 다이오드 및 그 형성 방법 |
| CN101542736A (zh) * | 2007-03-26 | 2009-09-23 | 住友电气工业株式会社 | 肖特基势垒二极管及其产生方法 |
| JP2009194225A (ja) * | 2008-02-15 | 2009-08-27 | Sumitomo Electric Ind Ltd | ショットキバリアダイオード、及びショットキバリアダイオードを作製する方法 |
| KR101461886B1 (ko) | 2013-09-10 | 2014-11-13 | 현대자동차 주식회사 | 쇼트키 배리어 다이오드 및 그 제조 방법 |
| KR102099438B1 (ko) * | 2013-10-07 | 2020-04-09 | 엘지이노텍 주식회사 | 반도체 소자 |
| JP6344264B2 (ja) * | 2015-02-27 | 2018-06-20 | 豊田合成株式会社 | 半導体装置およびその製造方法 |
| JP6260553B2 (ja) * | 2015-02-27 | 2018-01-17 | 豊田合成株式会社 | 半導体装置およびその製造方法 |
| JP2017139289A (ja) * | 2016-02-02 | 2017-08-10 | トヨタ自動車株式会社 | ダイオード |
| JP2018037585A (ja) | 2016-09-02 | 2018-03-08 | 豊田合成株式会社 | 半導体装置およびその製造方法 |
| CN111129165B (zh) * | 2019-12-05 | 2023-11-28 | 中国电子科技集团公司第十三研究所 | 肖特基二极管及其制备方法 |
| CN111129164B (zh) * | 2019-12-05 | 2023-09-26 | 中国电子科技集团公司第十三研究所 | 肖特基二极管及其制备方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55128879A (en) * | 1979-03-27 | 1980-10-06 | Nec Corp | Semiconductor device |
| CA2064146C (en) * | 1991-03-28 | 1997-08-12 | Hisashi Ariyoshi | Schottky barrier diode and a method of manufacturing thereof |
| US5365102A (en) * | 1993-07-06 | 1994-11-15 | North Carolina State University | Schottky barrier rectifier with MOS trench |
-
1994
- 1994-11-11 JP JP6278035A patent/JPH08139341A/ja active Pending
-
1995
- 1995-11-09 EP EP95117710A patent/EP0712167A3/en not_active Withdrawn
- 1995-11-09 FI FI955395A patent/FI955395A/fi unknown
- 1995-11-10 KR KR1019950040795A patent/KR100212203B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP0712167A2 (en) | 1996-05-15 |
| JPH08139341A (ja) | 1996-05-31 |
| EP0712167A3 (en) | 1996-07-31 |
| KR960019807A (ko) | 1996-06-17 |
| FI955395A (fi) | 1996-05-12 |
| KR100212203B1 (ko) | 1999-08-02 |
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