Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
  • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
  • H10D62/133—Emitter regions of BJTs
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D10/00—Bipolar junction transistors [BJT]
  • H10D10/01—Manufacture or treatment
  • H10D10/051—Manufacture or treatment of vertical BJTs
  • H10D10/056—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
  • H10D10/058—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs having multi-emitter structures, e.g. interdigitated, multi-cellular or distributed emitters
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D10/00—Bipolar junction transistors [BJT]
  • H10D10/40—Vertical BJTs
  • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
  • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
  • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
  • Y10S257/919—Elements of similar construction connected in series or parallel to average out manufacturing variations in characteristics

Applications Claiming Priority (1)

Publications (1)

Family

ID=7757904

Family Applications (1)

Country Status (6)

Families Citing this family (4)

Family Cites Families (11)

• 1995
  • 1995-03-27 DE DE19511251A patent/DE19511251A1/de not_active Ceased
• 1996
  • 1996-03-07 EP EP96103580A patent/EP0735590B1/de not_active Expired - Lifetime
  • 1996-03-07 DE DE59610612T patent/DE59610612D1/de not_active Expired - Fee Related
  • 1996-03-07 DK DK96103580T patent/DK0735590T3/da active
  • 1996-03-22 JP JP8091846A patent/JPH08274111A/ja active Pending
  • 1996-03-26 KR KR1019960008246A patent/KR960036118A/ko active IP Right Grant
  • 1996-03-27 US US08/623,905 patent/US5965929A/en not_active Expired - Lifetime

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