DE69615536D1 - Mos transistor - Google Patents

Mos transistor

Info

Publication number: DE69615536D1
Authority: DE; Germany
Prior art keywords: mos transistor; mos; transistor
Prior art date: 1995-11-28
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE69615536T

Other languages

English (en)

Other versions

DE69615536T2 (de

Inventor

Barry Hughes

William Moulding

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NXP BV

Original Assignee

Koninklijke Philips Electronics NV

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1995-11-28

Filing date

1996-11-19

Publication date

2001-10-31

1996-11-19 Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV

2001-10-31 Application granted granted Critical

2001-10-31 Publication of DE69615536D1 publication Critical patent/DE69615536D1/de

2002-05-08 Publication of DE69615536T2 publication Critical patent/DE69615536T2/de

2016-11-20 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/235—Channel regions of field-effect devices of FETs of IGFETs

DE69615536T 1995-11-28 1996-11-19 Mos transistor Expired - Lifetime DE69615536T2 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
GBGB9524334.1A GB9524334D0 (en)	1995-11-28	1995-11-28	Mos transistor
PCT/IB1996/001256 WO1997020352A1 (en)	1995-11-28	1996-11-19	Mos transistor

Publications (2)

Publication Number	Publication Date
DE69615536D1 true DE69615536D1 (de)	2001-10-31
DE69615536T2 DE69615536T2 (de)	2002-05-08

Family

ID=10784587

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69615536T Expired - Lifetime DE69615536T2 (de)	1995-11-28	1996-11-19	Mos transistor

Country Status (7)

Country	Link
US (1)	US6445034B1 (de)
EP (1)	EP0806057B1 (de)
JP (1)	JPH11500582A (de)
KR (1)	KR100447381B1 (de)
DE (1)	DE69615536T2 (de)
GB (1)	GB9524334D0 (de)
WO (1)	WO1997020352A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2008519047A (ja) *	2004-11-05	2008-06-05	セフアロン・インコーポレーテツド	癌処置
DE102004062357A1 (de) *	2004-12-14	2006-07-06	Atmel Germany Gmbh	Versorgungsschaltung zur Erzeugung eines Referenzstroms mit vorgebbarer Temperaturabhängigkeit
US9466669B2 (en)	2014-05-05	2016-10-11	Samsung Electronics Co., Ltd.	Multiple channel length finFETs with same physical gate length

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6022354B2 (ja) *	1977-09-20	1985-06-01	株式会社リコー	静電潜像現像方法
US4364041A (en) *	1978-07-12	1982-12-14	Sharp Kabushiki Kaisha	Contrast controllable electrochromic display driver circuit
JPS5646556A (en) *	1979-09-21	1981-04-27	Nec Corp	Field effect transistor
US4594577A (en) *	1980-09-02	1986-06-10	American Microsystems, Inc.	Current mirror digital to analog converter
JPH0666339B2 (ja) *	1985-07-01	1994-08-24	日本電気株式会社	２次元電子ガスｆｅｔ
JPH0669358B2 (ja) *	1985-07-11	1994-09-07	千代田化工建設株式会社	発酵装置
JPH01243591A (ja) *	1988-03-25	1989-09-28	Hitachi Ltd	半導体デバイス
JP2507007B2 (ja) *	1988-12-09	1996-06-12	松下電子工業株式会社	半導体装置
US5362988A (en) *	1992-05-01	1994-11-08	Texas Instruments Incorporated	Local mid-rail generator circuit

1995
- 1995-11-28 GB GBGB9524334.1A patent/GB9524334D0/en active Pending
1996
- 1996-11-19 EP EP96935288A patent/EP0806057B1/de not_active Expired - Lifetime
- 1996-11-19 DE DE69615536T patent/DE69615536T2/de not_active Expired - Lifetime
- 1996-11-19 WO PCT/IB1996/001256 patent/WO1997020352A1/en active IP Right Grant
- 1996-11-19 JP JP9520317A patent/JPH11500582A/ja not_active Abandoned
- 1996-11-19 KR KR1019970705101A patent/KR100447381B1/ko not_active IP Right Cessation
- 1996-11-26 US US08/753,556 patent/US6445034B1/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
KR19980701705A (ko)	1998-06-25
GB9524334D0 (en)	1996-01-31
WO1997020352A1 (en)	1997-06-05
JPH11500582A (ja)	1999-01-12
EP0806057B1 (de)	2001-09-26
DE69615536T2 (de)	2002-05-08
US6445034B1 (en)	2002-09-03
KR100447381B1 (ko)	2004-10-14
EP0806057A1 (de)	1997-11-12

Publication	Publication Date	Title
KR970703622A (ko)	1997-07-03	전계효과 트랜지스터(punch-through field effect transistor)
DE69713761D1 (de)	2002-08-08	Spintransistor
DE69724578D1 (de)	2003-10-09	SOI-MOS-Feldeffekttransistor
DE69528203D1 (de)	2002-10-17	Transistor
DE69633167D1 (de)	2004-09-23	Vertikales MOS-Halbleiterbauelement
FI103617B (fi)	1999-07-30	Kanavatransistorit
ES1033081Y (es)	1996-12-16	Dispositivo de desague.
DE69808161D1 (de)	2002-10-31	Feldeffekttransistor
NO976070D0 (no)	1997-12-23	Felteffekttransistor
DE69615536D1 (de)	2001-10-31	Mos transistor
DE69517662D1 (de)	2000-08-03	Feldeffekt-Transistor
DK0735590T3 (da)	2003-10-27	Bipolær siliciumtransistor
KR960031627U (ko)	1996-10-24	건축 배수용 방수구
KR970003714A (ko)	1997-01-28	모스 트랜지스터 제조 방법
DE69530871D1 (de)	2003-06-26	Halbleiteranordnung MOS-typ
KR970003716A (ko)	1997-01-28	모스 트랜지스터의 제조방법
DE69311093D1 (de)	1997-07-03	Feldeffekttransistor
KR960012686U (ko)	1996-04-17	쇼트키 트랜지스터
KR960033130U (ko)	1996-10-24	트랜지스터 고정구조
KR970003774U (ko)	1997-01-24	트랜지스터 고정구조
KR960027799U (ko)	1996-08-17	바이폴라 트랜지스터
KR970019784U (ko)	1997-05-26	모오스 트랜지스터
KR970023745U (ko)	1997-06-20	배수 조절구
KR970011994U (ko)	1997-04-25	쇼케이스의 배수받이
KR970009877U (ko)	1997-03-29	배수트랲

Legal Events

Date	Code	Title	Description
2002-10-24	8364	No opposition during term of opposition
2002-12-19	8320	Willingness to grant licences declared (paragraph 23)
2007-10-18	8328	Change in the person/name/address of the agent	Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN
2007-12-13	8327	Change in the person/name/address of the patent owner	Owner name: NXP B.V., EINDHOVEN, NL